Molecular assemblies on surfaces: towards physical and electronic decoupling of organic molecules

• Sabine Maier and
• Meike Stöhr

Beilstein J. Nanotechnol. 2021, 12, 950–956, doi:10.3762/bjnano.12.71

• tip of a scanning probe microscope and mechanically lifted from the metallic surface such that they hang freely between metal contacts. This manipulation technique allows for measuring, amongst others, the electronic conductance, magnetic properties, reversible switching, and electroluminescence of

In situ transport characterization of magnetic states in Nb/Co superconductor/ferromagnet heterostructures

• Olena M. Kapran,
• Roman Morari,
• Taras Golod,
• Evgenii A. Borodianskyi,
• Vladimir Boian,
• Andrei Prepelita,
• Nikolay Klenov,
• Anatoli S. Sidorenko and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2021, 12, 913–923, doi:10.3762/bjnano.12.68

• were used for the calibration of the etching rates of the films. MLs are patterned into micrometer-scale bridges with multiple contacts using photolithography and reactive ion etching. A scanning electron microscopy (SEM) image of one of the studied samples is shown in Figure 1a. Control of the

• ) devices controllable and highly reversible operation can be achieved at fields between one of the P states down to the AP state without entering into the realm of the opposite P state. (a) SEM image of a micropatterned Nb/Co multilayer. The sample contains twelve contacts, six horizontal and one vertical

Modification of a SERS-active Ag surface to promote adsorption of charged analytes: effect of Cu²⁺ ions

• Bahdan V. Ranishenka,
• Andrei Yu. Panarin,
• Irina A. Chelnokova,
• Sergei N. Terekhov,
• Peter Mojzes and
• Vadim V. Shmanai

Beilstein J. Nanotechnol. 2021, 12, 902–912, doi:10.3762/bjnano.12.67

• corresponds to the highest reported values for this method [10][12][32]. Moreover, the SEM image demonstrates many interparticle contacts, which are potential “hot spots” in SERS analysis. Electrostatic effect on SERS signal for thiol-modified Ag NPs Despite the high NP packing density, about 42% of the

9.1% efficient zinc oxide/silicon solar cells on a 50 μm thick Si absorber

• Rafal Pietruszka,
• Bartlomiej S. Witkowski,
• Monika Ozga,
• Katarzyna Gwozdz,
• Ewa Placzek-Popko and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 766–774, doi:10.3762/bjnano.12.60

• hole of 0.1 cm in diameter was placed on the samples. Then, Al was deposited on top via sputtering. The simple point contact was used on top of the structure. To improve the light collection from full-size ZnO/Si SCs, grid-like contacts should be used. The resulting solar cell structures are shown in

Recent progress in magnetic applications for micro- and nanorobots

• Ke Xu,
• Shuang Xu and
• Fanan Wei

Beilstein J. Nanotechnol. 2021, 12, 744–755, doi:10.3762/bjnano.12.58

• advantages of electromagnetic drives as a power source are no heat, no electrical contacts, good controllability, and high durability. Through the coupling of magnetic and electric fields, motion control of the MNR could be realized. When studying the combination of magnetic and electrical systems of MNRs

Physical constraints lead to parallel evolution of micro- and nanostructures of animal adhesive pads: a review

• Thies H. Büscher and
• Stanislav N. Gorb

Beilstein J. Nanotechnol. 2021, 12, 725–743, doi:10.3762/bjnano.12.57

• , hairy systems increase the attachment strength by increasing the hair density and, consequently, increasing the amount of single contacts. This trend, however, differs for multiple reasons among different lineages in which hairy adhesive pads evolved in a convergent manner [250]. The small effective

• from Springer Nature from “Biological fibrillar adhesives: functional principles and biomimetic applications. In: Handbook of Adhesion Technology” by S. N. Gorb, Copyright 2011 Springer Nature. This content is not subject to CC BY 4.0). (C) Dependence of the contact density of terminal contacts on the

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• irradiating just one side of a portion of WSe2 bridging two metal contacts to create semiconducting (pristine) and insulating (irradiated) halves contacted by the source and drain electrodes (Figure 2b). Direct-write of further logic circuits into single flakes of WSe2 and WS2 has also been demonstrated [26

A stretchable triboelectric nanogenerator made of silver-coated glass microspheres for human motion energy harvesting and self-powered sensing applications

• Hui Li,
• Yaju Zhang,
• Yonghui Wu,
• Hui Zhao,
• Weichao Wang,
• Xu He and
• Haiwu Zheng

Beilstein J. Nanotechnol. 2021, 12, 402–412, doi:10.3762/bjnano.12.32

• state (Figure 2a-I), the frictional layer and the S-TENG are in balance without potential difference. When the frictional layer contacts the silicone rubber (Figure 2a-II), the positive charges in the frictional layer are equal to the negative charges in the silicone rubber. Once the surfaces of

Nickel nanoparticle-decorated reduced graphene oxide/WO₃ nanocomposite – a promising candidate for gas sensing

• Ilka Simon,
• Alexandr Savitsky,
• Rolf Mülhaupt,
• Vladimir Pankov and
• Christoph Janiak

Beilstein J. Nanotechnol. 2021, 12, 343–353, doi:10.3762/bjnano.12.28

• composite create a hierarchical nanostructure and facilitate the diffusion of NO2 molecules, increasing the contacts and enhancing the chemisorption of the gas. rGO has large specific area and more active sites. Gas sensors of n-type semiconductors based on oxides exhibit resistance changes induced by

Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy

• Rosine Coq Germanicus,
• Peter De Wolf,
• Florent Lallemand,
• Catherine Bunel,
• Serge Bardy,
• Hugues Murray and
• Ulrike Lüders

Beilstein J. Nanotechnol. 2020, 11, 1764–1775, doi:10.3762/bjnano.11.159

• ) have a slightly different polishing rate, which results in the observed topography. In the AFM topography image, one can localize the two deep trench isolation structures in the silicon wafer, as well as the anode and cathode contacts. It is important to note that a low roughness is required for a

• vertical PIN diode with the associated metallic contacts of the anode. Although the sMIM-R signal shows a low signal-to-noise ratio, it is still possible to differentiate metallic materials from semiconductor layers. Also, the conductivity continuity between the metallic contact and the p+ anode can be

• that the depth profile has a good signal-to-noise ratio for the sMIM-C signal for each layer. This first analysis demonstrates the capability of the sMIM methodology to distinguish, localize, and determine both p-type and n-type semiconductors as well as lightly doped layers, metallic contacts, and

Seebeck coefficient of silicon nanowire forests doped by thermal diffusion

• Shaimaa Elyamny,
• Elisabetta Dimaggio and
• Giovanni Pennelli

Beilstein J. Nanotechnol. 2020, 11, 1707–1713, doi:10.3762/bjnano.11.153

• , energy storage (supercapacitors), and, in particular, thermoelectric applications [15][16][17]. There are two main requirements to the fabrication of a leg for a thermoelectric generator that is based on a large number of silicon nanowires perpendicular to a substrate: 1) Electrical contacts need to

• the contacts ℜCA = (1.8 ± 0.6) × 10−5 m2·K/W. It has been assumed that the contact thermal resistance ℜCA was the same for all the samples, since it depends on the mechanical pressure, which has been set to 20 MPa during all measurements. The thermal resistance of the contacts ℜCA is fundamental for

Piezoelectric sensor based on graphene-doped PVDF nanofibers for sign language translation

• Shuai Yang,
• Xiaojing Cui,
• Rui Guo,
• Zhiyi Zhang,
• Shengbo Sang and
• Hulin Zhang

Beilstein J. Nanotechnol. 2020, 11, 1655–1662, doi:10.3762/bjnano.11.148

• a high sensitivity to pressing and bending, and there is a stable correlation between bending angle and piezoelectric voltage. The sensitivity can be adjusted by changing the doping concentration of GR. Also, when the PES contacts a source of heat, a pyroelectric signal can be acquired. The positive

Amorphized length and variability in phase-change memory line cells

• Nafisa Noor,
• Sadid Muneer,
• Raihan Sayeed Khan,
• Anna Gorbenko and
• Helena Silva

Beilstein J. Nanotechnol. 2020, 11, 1644–1654, doi:10.3762/bjnano.11.147

• capped by silicon nitride [24]. All cells were approx. 130 nm in width, WGST, approx. 470 nm in length between the metal contacts, LGST, and approx. 50 nm in thickness, tGST (SEM image in inset of Figure 2a). The as-fabricated cells were annealed in a Janis ST-500-UHT probe station at a pressure of

Selective detection of complex gas mixtures using point contacts: concept, method and tools

• Alexander P. Pospelov,
• Victor I. Belan,
• Dmytro O. Harbuz,
• Volodymyr L. Vakula,
• Lyudmila V. Kamarchuk,
• Yuliya V. Volkova and
• Gennadii V. Kamarchuk

Beilstein J. Nanotechnol. 2020, 11, 1631–1643, doi:10.3762/bjnano.11.146

• unique properties of Yanson point contacts used as the sensing elements. The quantum properties of Yanson point contacts enable the solution of some of the problems that could not be solved using conventional sensors measuring conductance. In the present paper, we demonstrate this by showing the

• ; cortisol; hormone detection; point contact; quantum sensor; selective detection; serotonin; Yanson point contacts; Introduction The functioning of devices comprising low-dimensional structures as basic elements depends on quantum effects, which play a crucial role in the unique properties of nanomaterials

• point contacts as the basic element of quantum sensor devices [3][4]. Of all modern nanosensors measuring a variation in electrical conductance, point-contact sensors have a number of unique properties. The nontrivial nature of point-contact sensors is based on the distinctive properties of the Yanson

High-responsivity hybrid α-Ag₂S/Si photodetector prepared by pulsed laser ablation in liquid

• Raid A. Ismail,
• Hanan A. Rawdhan and
• Duha S. Ahmed

Beilstein J. Nanotechnol. 2020, 11, 1596–1607, doi:10.3762/bjnano.11.142

• investigate the optoelectronic properties of the Ag2S/Si photodetector, ohmic contacts were made by thermally evaporating In and Al films on the nanostructured Ag2S film and the back side of the silicon substrate, respectively, as shown in Figure 2. The sensitive area of the planar photodetector was 1.5 cm2

Atomic defect classification of the H–Si(100) surface through multi-mode scanning probe microscopy

• Jeremiah Croshaw,
• Thomas Dienel,
• Taleana Huff and
• Robert Wolkow

Beilstein J. Nanotechnol. 2020, 11, 1346–1360, doi:10.3762/bjnano.11.119

• hydrogen-desorbed patch of silicon [43][92]. Bright contrast, H-functionalised AFM tips were routinely formed with controlled contact on H-terminated portions of the surface, while bare silicon AFM tips were formed using only desorbed patches (although not all controlled contacts on a desorbed patch

Controlling the proximity effect in a Co/Nb multilayer: the properties of electronic transport

• Sergey Bakurskiy,
• Mikhail Kupriyanov,
• Nikolay V. Klenov,
• Igor Soloviev,
• Andrey Schegolev,
• Roman Morari,
• Yury Khaydukov and
• Anatoli S. Sidorenko

Beilstein J. Nanotechnol. 2020, 11, 1336–1345, doi:10.3762/bjnano.11.118

• transport measurements was etched under pure argon atmosphere (Ar+ milling) in a CRYO RIE Alba Nova machine (Stockholm University). The patterned design allowed for a four-point type measurement of six segments of the sample in one cooling cycle (Figure 4). The pair of contacts was applied for setting the

• the vicinity of T = 7.3 K is similar to the behavior of R(T) in the S/N and S/F contacts upon the conversion of the current from normal to a supercurrent. Furthermore, there are several resistance jumps in the temperature region around T = 6.7 K. The actual number of jumps changes for different

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors

• Jakub Jadwiszczak,
• Pierce Maguire,
• Conor P. Cullen,
• Georg S. Duesberg and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

• , we find that irradiating the electrode–channel interface has a deleterious impact on charge transport when contrasted with irradiations confined only to the transistor channel. Keywords: 2D materials; contacts; defect engineering; helium ion microscope; ion beam doping; vacancies; two-dimensional

Proximity effect in [Nb(1.5 nm)/Fe(x)]₁₀/Nb(50 nm) superconductor/ferromagnet heterostructures

• Yury Khaydukov,
• Sabine Pütter,
• Laura Guasco,
• Roman Morari,
• Gideok Kim,
• Thomas Keller,
• Anatolie Sidorenko and
• Bernhard Keimer

Beilstein J. Nanotechnol. 2020, 11, 1254–1263, doi:10.3762/bjnano.11.109

• allows us to exclude these cases. To discuss this effect we first need to pay attention to the peculiarities of our transport experiment. Since the contacts are attached to the surface, electrical current will tend to flow along the surface penetrating only to a certain depth λ. To calculate λ one needs

3D superconducting hollow nanowires with tailored diameters grown by focused He⁺ beam direct writing

• Rosa Córdoba,
• Alfonso Ibarra,
• Dominique Mailly,
• Isabel Guillamón,
• Hermann Suderow and
• José María De Teresa

Beilstein J. Nanotechnol. 2020, 11, 1198–1206, doi:10.3762/bjnano.11.104

• transport study using the typical four-point-probe configuration has been performed. Following the procedure described in [17], first 3D NWs were placed flat on the SiO2 layer of a Si/SiO2 substrate by means of a nano-manipulator. Then, four Pt FIBID contacts were grown to connect the NWs to pre-patterned

Hybridization vs decoupling: influence of an h-BN interlayer on the physical properties of a lander-type molecule on Ni(111)

• Maximilian Schaal,
• Takumi Aihara,
• Marco Gruenewald,
• Felix Otto,
• Jari Domke,
• Roman Forker,
• Hiroyuki Yoshida and
• Torsten Fritz

Beilstein J. Nanotechnol. 2020, 11, 1168–1177, doi:10.3762/bjnano.11.101

• n-type contact for future molecular electronic devices. Keywords: buried interface; decoupling; hexagonal boron nitride; hybridization; tetraphenyldibenzoperiflanthene (DBP); two-dimensional materials; Introduction The interfaces between organic molecules and metal contacts play a crucial role in

Excitonic and electronic transitions in Me–Sb₂Se₃ structures

• Nicolae N. Syrbu,
• Victor V. Zalamai,
• Ivan G. Stamov and
• Stepan I. Beril

Beilstein J. Nanotechnol. 2020, 11, 1045–1053, doi:10.3762/bjnano.11.89

• Brillouin zone center. The effective mass of the electrons and holes was calculated as well as the anisotropy of the latter. The photoconductivity measurements were performed in the excitonic region at positive and negative voltages applied to the Me–Sb2Se3 contacts. A similar investigation using the Sb2S3

• (In–Sb2Se3) contacts, the structures were obtained by either thermal sputtering under vacuum or electrochemical deposition onto the cleaved faces of single crystals (Figure 3A). Current–voltage characteristics suggest that the contacts have an ohmic behavior. The impedance has a frequency dependence

• that is characteristic of the conductivity hopping mechanism which in turn is independent of the metal type and the deposition method used. The photocurrent increases when the energy of the photons increases in the Schottky barriers when the transparent contacts are illuminated. The structures with the

A new photodetector structure based on graphene nanomeshes: an ab initio study

• Babak Sakkaki,
• Hassan Rasooli Saghai,
• Ghafar Darvish and
• Mehdi Khatir

Beilstein J. Nanotechnol. 2020, 11, 1036–1044, doi:10.3762/bjnano.11.88

• of the same GNR type. Also, we consider the electrodes have n-type doping. The left- and the right-hand edge of the electrodes are shown in the figure with black lines. Figure 1e shows a typical GNM-based device where nanomesh channel with graphene contacts are introduced to be used in our

• simulations. We assumed a finite GNM length between the two contacts. The channel of the photodetector has three GNM supercells along the transport direction (X direction), while in the perpendicular direction the channel length is defined to be infinite. To compare the designed devices with other

• (c) A4Z6-24. Purple (larger) and yellow (smaller) spheres represent carbon and hydrogen atoms, respectively. Quadrilaterals with black lines represent the supercells of GNM. (d) A photodetector device made of GNRs with two source and drain contacts. The contacts are made of doped GNRs and the channel

Gas-sensing features of nanostructured tellurium thin films

• Dumitru Tsiulyanu

Beilstein J. Nanotechnol. 2020, 11, 1010–1018, doi:10.3762/bjnano.11.85

• , identified in our preliminary works as ohmics [25][26], which form electrically transparent contacts with Te. The gold or copper wires were then attached to the electrodes with a silver paste. Figure 1A shows the surface morphology of a Te film grown on a Pyrex glass substrate at a rate of 10 nm/s. As shown

• with an approximate average size of 100 nm. Assuming the neutrality of the Au/Te contacts, the electrical conductivity of the film is mainly controlled by the bulk, surface and grain boundary resistances. On the other hand, due to the peculiarities of chalcogens and chalcogenide materials [1][30], a

Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

• Elena I. Monaico,
• Eduard V. Monaico,
• Veaceslav V. Ursaki,
• Shashank Honnali,
• Vitalie Postolache,
• Karin Leistner,
• Kornelius Nielsch and
• Ion M. Tiginyanu

Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81

• photodetector for the IR region of the spectrum was tested, as described in the Experimental section. A special design of contacts was applied via laser beam lithography on selected nanowires. As illustrated in Figure 7A, defined regions (bright regions) were opened in the photoresist (dark regions) for further

• metal deposition. Note that the nanowire was visible in the optical microscope due to its length of 70 µm, despite the small diameter. The distance between the contacts is 20 µm. A photograph of five contacted nanowires on a glass substrate after Cr/Au deposition and lift-off is presented in the inset

• light. The current–voltage characteristics measured with and without illumination reveal a good ohmic quality of the prepared Cr/Au contacts (Figure 8). Therefore, one can conclude that the detector works in the photoconductor mode. The responsivity of the detector is defined as where Iphoto is the