Nonlinear absorption and scattering of a single plasmonic nanostructure characterized by x-scan technique

• Tushar C. Jagadale,
• Dhanya S. Murali and
• Shi-Wei Chu

Beilstein J. Nanotechnol. 2019, 10, 2182–2191, doi:10.3762/bjnano.10.211

• , the backscattering decay is by cubic order larger than the absorption decay. One possible reason could be that scattering is proportional to the square of the variation of the dielectric constant, while absorption is linearly proportional to the dielectric constant. Within the dipole approximation

• , the absorption and scattering cross sections of a plasmonic nanosphere can be determined by classical Mie theory as: where, k is the wave vector, r is the radius of the particle, εp is the dielectric constant of the particle and εm is the dielectric constant of the surrounding medium. Upon irradiation

BergaCare SmartLipids: commercial lipophilic active concentrates for improved performance of dermal products

• Florence Olechowski,
• Rainer H. Müller and
• Sung Min Pyo

Beilstein J. Nanotechnol. 2019, 10, 2152–2162, doi:10.3762/bjnano.10.208

• the skin even under mechanical stress is beneficial to fight pollution factors. The lipid particles adhere onto the skin as any nanosized particle does and form a film. This film formation can be followed by measuring the dielectric constant of the skin, using a Corneometer® (Courage + Khazaka

• Electronic GmbH, Germany) [26]. The probe determines the dielectric constant, D, of the skin through a condenser in the probe. An insulator medium in the condenser reduces the measured D value. For example, D is 0 for a complete insulator (vacuum), about 5 for lipids and organic liquids, and 80 for pure

• remain on the skin (right arm). Determination of the relative film thickness by measuring the dielectric constant D on skin. Probe readings of untreated skin and skin with applied increasing concentration of lipid particle suspension; reproduced with permission from [27], copyright 2013 Euro Cosmetics

Fabrication and characterization of Si_1−xGe_x nanocrystals in as-grown and annealed structures: a comparative study

• Muhammad Taha Sultan,
• Adrian Valentin Maraloiu,
• Ionel Stavarache,
• Jón Tómas Gudmundsson,
• Andrei Manolescu,
• Valentin Serban Teodorescu,
• Magdalena Lidia Ciurea and
• Halldór Gudfinnur Svavarsson

Beilstein J. Nanotechnol. 2019, 10, 1873–1882, doi:10.3762/bjnano.10.182

• interface traps (known as Pb-type defects). These interface traps produce scattering centers that can affect the mobility of charge carriers, thus altering the transport properties [11]. Moreover, sharp interfaces with an abrupt change in the dielectric constant or thermal expansion coefficients give rise

Prestress-loading effect on the current–voltage characteristics of a piezoelectric p–n junction together with the corresponding mechanical tuning laws

• Wanli Yang,
• Shuaiqi Fan,
• Yuxing Liang and
• Yuantai Hu

Beilstein J. Nanotechnol. 2019, 10, 1833–1843, doi:10.3762/bjnano.10.178

• = e2/(cε). In the above, strain S and electric field E can be expressed as S = du/dx and E = −dϕ/dx, in which u and ϕ are displacement and electric potential, respectively. c, e and ε are elastic, piezoelectric and dielectric constant, respectively. The one-dimensional Gauss’s law of a piezoelectric p

Materials nanoarchitectonics at two-dimensional liquid interfaces

• Katsuhiko Ariga,
• Michio Matsumoto,
• Taizo Mori and
• Lok Kumar Shrestha

Beilstein J. Nanotechnol. 2019, 10, 1559–1587, doi:10.3762/bjnano.10.153

• categorized as interfacial environments with certain degrees of freedom of molecular mobility (dynamism). These interfaces with liquids have several intrinsic features: (i) They are environments of two different phases; (ii) they exhibit a discontinuous change of the dielectric constant; (iii) they are highly

• revealed that large binding constants can be obtained when the binding site locates in the phase of the lower dielectric constant. In contrast, when the binding site was located to be deep in the phase of the higher dielectric constant, the binding constants were calculated to decrease significantly

Tailoring the magnetic properties of cobalt ferrite nanoparticles using the polyol process

• Malek Bibani,
• Romain Breitwieser,
• Alex Aubert,
• Vincent Loyau,
• Silvana Mercone,
• Souad Ammar and
• Fayna Mammeri

Beilstein J. Nanotechnol. 2019, 10, 1166–1176, doi:10.3762/bjnano.10.116

• backbone and a higher dielectric constant (εr(TriEG) = 23.7 vs εr(TetEG) = 20.4) while the latter exhibits a larger molecular weight and is assumed to be a little more polar (µTetEG = 5.84 D vs µTriEG = 5.58 D) [28]. Regardless of reaction time and composition, we observe that the NP diameter is higher

• when tetraethylene glycol is used instead of triethylene glycol. Dipolar moment and dielectric constant of the two molecules are very similar and we can assume that they both exhibit the same strength to dissolve the ionic precursors. TetEG has a longer backbone than TriEG and can chelate bigger

CuInSe₂ quantum dots grown by molecular beam epitaxy on amorphous SiO₂ surfaces

• Henrique Limborço,
• Pedro M.P. Salomé,
• Rodrigo Ribeiro-Andrade,
• Jennifer P. Teixeira,
• Nicoleta Nicoara,
• Kamal Abderrafi,
• Joaquim P. Leitão,
• Juan C. Gonzalez and
• Sascha Sadewasser

Beilstein J. Nanotechnol. 2019, 10, 1103–1111, doi:10.3762/bjnano.10.110

• energy for the QD [48] and QW [49] can be calculated as: where Eg is the CIS low-temperature bandgap energy, h is the Planck constant, me is the effective conduction-band mass, mh is the effective valence-band mass, e is the rest electron charge, ε is the CIS dielectric constant and Ex is the exciton

Influence of dielectric layer thickness and roughness on topographic effects in magnetic force microscopy

• Alexander Krivcov,
• Jasmin Ehrler,
• Marc Fuhrmann,
• Tanja Junkers and
• Hildegard Möbius

Beilstein J. Nanotechnol. 2019, 10, 1056–1064, doi:10.3762/bjnano.10.106

• nanoparticle diameter) resulting in a positive phase shift: with A being the effective capacitive area, z the lift height, d the nanoparticle diameter, VCPD the contact potential difference between tip and substrate, Q the quality factor, k the spring constant of the cantilever, and ε0 the dielectric constant

• capacitive coupling of the tip with the substrate beneath the dielectric layer. The effective thickness is calculated as follows: εR represents the dielectric constant and tl the real film thickness of the dielectric layer. The dielectric constant for the layer used in this work is 3.1 [21]. Figure 3

• silicon substrates at 3000 rpm using a closed-system spin-coater with rotating lid (BLE). Bisphenol A-epichlorohydrin resin was used as dielectric layer. The resin is the hard component of AR-P 5910 resist (Allresist) with a dielectric constant of 3.1 [21]. The thickness was varied by different dilutions

Revisiting semicontinuous silver films as surface-enhanced Raman spectroscopy substrates

• Malwina Liszewska,
• Bogusław Budner,
• Małgorzata Norek,
• Bartłomiej J. Jankiewicz and
• Piotr Nyga

Beilstein J. Nanotechnol. 2019, 10, 1048–1055, doi:10.3762/bjnano.10.105

• dielectric constant of the metal, surrounding dielectric, shape and size of the nanostructure, and its orientation with respect to the electric component of the electromagnetic field [1][2]. At resonance, the electric field near the surface of metallic nanostructures can be greatly enhanced and localized in

Structural and optical properties of penicillamine-protected gold nanocluster fractions separated by sequential size-selective fractionation

• Xiupei Yang,
• Zhengli Yang,
• Fenglin Tang,
• Jing Xu,
• Maoxue Zhang and
• Martin M. F. Choi

Beilstein J. Nanotechnol. 2019, 10, 955–966, doi:10.3762/bjnano.10.96

• the solution, the solubility of AuNCs in the mixed solvent was lowered due to the low dielectric constant of acetone, resulting in the precipitation of relatively large-sized clusters. The deposit could then be separated from the solution by centrifugation. Four fractions (F36%, F54%, F72%, and F90

Review of time-resolved non-contact electrostatic force microscopy techniques with applications to ionic transport measurements

• Aaron Mascaro,
• Yoichi Miyahara,
• Tyler Enright,
• Omur E. Dagdeviren and
• Peter Grütter

Beilstein J. Nanotechnol. 2019, 10, 617–633, doi:10.3762/bjnano.10.62

• dielectric constant (εr > 10), which is similar to those found in many solid ionic conductors such as LiFePO4 and LiCoO2, and for its low electronic conductivity and lack of mobile ions. This experiment is therefore a reliable validation of the z-dependence of the tip–sample capacitance expected for actual

Biomimetic synthesis of Ag-coated glasswing butterfly arrays as ultra-sensitive SERS substrates for efficient trace detection of pesticides

• Guochao Shi,
• Mingli Wang,
• Yanying Zhu,
• Yuhong Wang,
• Xiaoya Yan,
• Xin Sun,
• Haijun Xu and
• Wanli Ma

Beilstein J. Nanotechnol. 2019, 10, 578–588, doi:10.3762/bjnano.10.59

• set to 1 nm × 1 nm × 1 nm. The dielectric function of a metal is a complex entity as a function of the wavelength. Therefore, the infinite-frequency relative dielectric constant and the zero-frequency relative dielectric constant of Ag were set according to the Gai’s work [36]. In order to simulate as

Mo-doped boron nitride monolayer as a promising single-atom electrocatalyst for CO₂ conversion

• Qianyi Cui,
• Gangqiang Qin,
• Weihua Wang,
• Lixiang Sun,
• Aijun Du and
• Qiao Sun

Beilstein J. Nanotechnol. 2019, 10, 540–548, doi:10.3762/bjnano.10.55

• solvent environment [60], and the dielectric constant was 78.54. To construct the modes, we first built a periodic 5 × 5 BN supercell, whose vacuum region was 15 Å along the z-direction. The single TM atoms were doped at the boron vacancy sites [45]. All of the structures were completely optimized in a

Nanocomposite–parylene C thin films with high dielectric constant and low losses for future organic electronic devices

• Marwa Mokni,
• Gianluigi Maggioni,
• Abdelkader Kahouli,
• Sara M. Carturan,
• Walter Raniero and
• Alain Sylvestre

Beilstein J. Nanotechnol. 2019, 10, 428–441, doi:10.3762/bjnano.10.42

• with various contents and sizes of silver-oxide nanoparticles were investigated by broadband dielectric spectroscopy (BDS) in view of their final application. It was found that both the content and the size of the nanoparticles influence the value of the dielectric constant and the frequency-dependence

• of the permittivity. In particular, β-relaxation is affected by the addition of nanoparticles as well as the dissipation factor, which is even improved. A dielectric constant of 5 ± 1 with a dissipation factor of less than 0.045 in the range from 0.1 Hz to 1 MHz is obtained for a 2.7 µm thick NCPC

• ; Introduction Increasing the dielectric constant of gate dielectrics for oxide thin-film transistors (TFTs) improves the performance of such devices. Challenges are in the processing of these high-k dielectrics and various approaches were tested over time. Among them, low-cost and innovative methods were

A novel polyhedral oligomeric silsesquioxane-modified layered double hydroxide: preparation, characterization and properties

• Xianwei Zhang,
• Zhongzhu Ma,
• Hong Fan,
• Carla Bittencourt,
• Jintao Wan and
• Philippe Dubois

Beilstein J. Nanotechnol. 2018, 9, 3053–3068, doi:10.3762/bjnano.9.284

• controlled manner, making POSS a class of promising nanoscale building blocks for advanced functional nanomaterials [22][23][24]. Besides, the unique inorganic–organic architecture also endows POSS with low dielectric constant, high thermal and oxidation resistance [23][25]. And unlike traditional organic

Electrostatic force microscopy for the accurate characterization of interphases in nanocomposites

• Diana El Khoury,
• Richard Arinero,
• Jean-Charles Laurentie,
• Mikhaël Bechelany,
• Michel Ramonda and
• Jérôme Castellon

Beilstein J. Nanotechnol. 2018, 9, 2999–3012, doi:10.3762/bjnano.9.279

• filler. For instance, although the inorganic filler usually displays higher permittivity values than the polymer, the resulting nanofiller mixture in the matrix presents, at low nanofiller concentrations, a surprisingly lower dielectric constant than that of the two mixture components [10][11][12][13

• of the interphase. Moreover, it has been reported that water can be absorbed at the interface [15][16][17]. Water molecules within the interphase increase its effective dielectric constant, and this can explain the unexpectedly higher nanocomposite permittivity. Therefore, the local characterization

Colloidal chemistry with patchy silica nanoparticles

• Pierre-Etienne Rouet,
• Cyril Chomette,
• Laurent Adumeau,
• Etienne Duguet and
• Serge Ravaine

Beilstein J. Nanotechnol. 2018, 9, 2989–2998, doi:10.3762/bjnano.9.278

• samples was measured once again and the zeta potential values were measured using the Malvern Zetasizer 3000 HS setup (Malvern Instruments). Each measurement was performed for 30 s, the dielectric constant of solvent (water) was set to 80.4 and the Smoluchowsky factor f(κa) was 1.5. Synthesis of the CMs

In situ characterization of nanoscale contaminations adsorbed in air using atomic force microscopy

• Jesús S. Lacasa,
• Lisa Almonte and
• Jaime Colchero

Beilstein J. Nanotechnol. 2018, 9, 2925–2935, doi:10.3762/bjnano.9.271

• , h is the total thickness of the dielectric films on tip and sample, ε0 is the dielectric permittivity of vacuum and ε is the relative dielectric constant [43][44][45][46]. For a purely metallic system in air or vacuum were no dielectric layer is present (h = 0), the expression simplifies to C″(d

Silencing the second harmonic generation from plasmonic nanodimers: A comprehensive discussion

• Jérémy Butet,
• Gabriel D. Bernasconi and
• Olivier J. F. Martin

Beilstein J. Nanotechnol. 2018, 9, 2674–2683, doi:10.3762/bjnano.9.250

• imaginary part of the dielectric constant of gold is constant and does not modify the losses at the SH wavelength. Figure 3 shows the maximal SHG induced by the resonant excitation of the bonding dipolar mode at the fundamental wavelength for gaps ranging from 5 nm to 400 nm. For the largest gaps, the

Two-dimensional semiconductors pave the way towards dopant-based quantum computing

• José Carlos Abadillo-Uriel,
• Belita Koiller and
• María José Calderón

Beilstein J. Nanotechnol. 2018, 9, 2668–2673, doi:10.3762/bjnano.9.249

• instance, MoS2[32] or h-BN [33]) and the experimentally reported values lie in a wide range [32]. Typically, the dielectric constant of monolayer materials is expected to be smaller than their 3D counterparts, as their screening capabilities are reduced at low dimensionality [29][33]. All this variability

• the effect of a non-local dielectric function can be reproduced by a dielectric constant given by its average within the radius of the wave-function [36], dramatically simplifying the energy calculations. In [36], this simplification has been proven to be accurate for the calculation of the exciton

• describe shallow states in semiconductors, thus the band gap energy of the considered material has to be much larger than the binding energies EB. In order to implement this condition, we consider the generally unknown dielectric constant as a free parameter and estimate its minimum value required for the

Impact of the anodization time on the photocatalytic activity of TiO₂ nanotubes

• Jesús A. Díaz-Real,
• Geyla C. Dubed-Bandomo,
• Juan Galindo-de-la-Rosa,
• Luis G. Arriaga,
• Janet Ledesma-García and
• Nicolas Alonso-Vante

Beilstein J. Nanotechnol. 2018, 9, 2628–2643, doi:10.3762/bjnano.9.244

• dielectric constant of the material. From the CV curves, an increase in the capacitive current was observed towards lower potential values, which is typical for a transition to the accumulation region of n-type semiconductors. The calculated values for Eg and ND are summarized in Table 3, and compared to the

Enhancement of X-ray emission from nanocolloidal gold suspensions under double-pulse excitation

• Wei-Hung Hsu,
• Frances Camille P. Masim,
• Armandas Balčytis,
• Hsin-Hui Huang,
• Tetsu Yonezawa,
• Aleksandr A. Kuchmizhak,
• Saulius Juodkazis and
• Koji Hatanaka

Beilstein J. Nanotechnol. 2018, 9, 2609–2617, doi:10.3762/bjnano.9.242

• [26], respectively. Theory: Epsilon-Near-Zero (ENZ)-Material A strong generation of X-rays is related to a large amount of absorbed energy and a high temperature [3][4]. In terms of relative permittivity (dielectric constant), εr, a transparent medium (water) with colloidal gold nanoparticles

Filling nanopipettes with apertures smaller than 50 nm: dynamic microdistillation

• Evelyne Salançon and
• Bernard Tinland

Beilstein J. Nanotechnol. 2018, 9, 2181–2187, doi:10.3762/bjnano.9.204

• . Results and Discussion Quartz capillaries, being of pure silica, have certain intrinsic properties (low dielectric constant, low loss factor, high volume resistivity, strength and chemical purity) that make them appropriate for the reproducible electrical measurements described below. Notably, they

Interaction-induced zero-energy pinning and quantum dot formation in Majorana nanowires

• Samuel D. Escribano,
• Alfredo Levy Yeyati and
• Elsa Prada

Beilstein J. Nanotechnol. 2018, 9, 2171–2180, doi:10.3762/bjnano.9.203

• intrinsic part of the potential satisfies an analogous equation with a uniform ε equal to that of the nanowire. The geometry depicted in Figure 1a is taken into account through a piecewise function where each material is characterized by a different dielectric constant, so that changes abruptly at the

• interfaces have on average the same sign as the free charges. We consider in Section 4 of Supporting Information File 1 the generality of our results as a function of the dielectric constant of the SC and the location of the charge density within the nanowire section. Below, in Figure 4c we show that, when

Synthesis of hafnium nanoparticles and hafnium nanoparticle films by gas condensation and energetic deposition

• Irini Michelakaki,
• Nikos Boukos,
• Dimitrios A. Dragatogiannis,
• Spyros Stathopoulos,
• Costas A. Charitidis and
• Dimitris Tsoukalas

Beilstein J. Nanotechnol. 2018, 9, 1868–1880, doi:10.3762/bjnano.9.179

• cross section in neutron absorption [32]. Hafnium alloys are used in medical applications because they are biocompatible and exhibit high corrosion resistance as well as in aerospace technology because it can increase the mechanical strength of materials [33]. Furthermore, because of its high dielectric

• constant HfO2 and its compounds are used in the field of microelectronics for the manufacturing of integrated circuits and more particularly as gate dielectrics of metal-oxide semiconductor transistors having replaced the traditional thermally grown SiO2 dielectric [34]. More recently, HfO2 was also