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Search for "gap" in Full Text gives 741 result(s) in Beilstein Journal of Nanotechnology. Showing first 200.

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS2 thin films with domains much smaller than the laser spot size

  • Felipe Wasem Klein,
  • Jean-Roch Huntzinger,
  • Vincent Astié,
  • Damien Voiry,
  • Romain Parret,
  • Houssine Makhlouf,
  • Sandrine Juillaguet,
  • Jean-Manuel Decams,
  • Sylvie Contreras,
  • Périne Landois,
  • Ahmed-Azmi Zahab,
  • Jean-Louis Sauvajol and
  • Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

Graphical Abstract
  • dependence of the A2D(Si)/A0(Si) ratio, its dependence on SiO2 thickness combined with experimental errors lead to the conclusion that the measured values for N and N + 1 can overlap for any N if the SiO2 thickness is not known with good accuracy. For a given SiO2 thickness, the gap between the A2D(Si)/A0(Si
  • would be close in twisted and 2Hc-stacked MoS2 multilayers. However, as previously recalled, the sensitivity of this ratio to the SiO2 thickness and the gap between the A2D(Si)/A0(Si) ratios for N and N + 1 permit to ensure the determination of N with a rather good reliability only for N ≤ 5. DLI-PP-CVD
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Published 07 Mar 2024

Design, fabrication, and characterization of kinetic-inductive force sensors for scanning probe applications

  • August K. Roos,
  • Ermes Scarano,
  • Elisabet K. Arvidsson,
  • Erik Holmgren and
  • David B. Haviland

Beilstein J. Nanotechnol. 2024, 15, 242–255, doi:10.3762/bjnano.15.23

Graphical Abstract
  • less than the London penetration depth to the normal-state sheet resistance R□ and the superconducting energy gap Δ0. For a conductor of length ℓ and width w, the kinetic inductance is where Lk,□ is the kinetic inductance per square. From Equation 4, we require a superconducting film with large normal
  • -ion etch (RIE) process in a Plasmapro 100 ICP300 from Oxford Instruments, with an etch rate of roughly 8 nm/min. (e) Fine circuit pattern. Electron-beam lithography defines the finer structures, such as the meandering nanowire inductor, the shunt inductor, and the interdigital gap of the capacitor. We
  • temperature Tc = 9.6 K, from which we estimate the superconducting energy gap with the BCS relation Δ0 = 1.76kBTc = 1.46 meV. Using Equation 4, we find a kinetic inductance per square Lk,□ = 35 pH/□ for the 200 nm wide nanowires, corresponding to a kinetic inductance per unit length Lk/ℓ = 175 pH/μm. We
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Published 15 Feb 2024

Exploring disorder correlations in superconducting systems: spectroscopic insights and matrix element effects

  • Vyacheslav D. Neverov,
  • Alexander E. Lukyanov,
  • Andrey V. Krasavin,
  • Alexei Vagov,
  • Boris G. Lvov and
  • Mihail D. Croitoru

Beilstein J. Nanotechnol. 2024, 15, 199–206, doi:10.3762/bjnano.15.19

Graphical Abstract
  • disordered amorphous superconductors [50] revealed that in the regime of superconductor–insulator transition the superconducting gap is stable, whereas the coherence peaks in the single-particle density of states (DOS) disappear. Following this observation, it was suggested that the system exhibits
  • analysis. The quasi-particle DOS is determined by the following expression: This quantity is ensemble-averaged over various realizations of the disorder potential, as illustrated in Figure 1 for three specific values of the correlation degree, α = 0, 1, and 2. The figure clearly indicates that both the gap
  • and the two coherence peaks at its edges depend on α. Notably, the gap exhibits a discernible reduction with increasing α. In the case of uncorrelated disorder with α = 0, the gap is approximately 80% larger compared to the scenario with α = 2. Simultaneously, the coherence peaks gradually vanish with
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Published 12 Feb 2024

CdSe/ZnS quantum dots as a booster in the active layer of distributed ternary organic photovoltaics

  • Gabriela Lewińska,
  • Piotr Jeleń,
  • Zofia Kucia,
  • Maciej Sitarz,
  • Łukasz Walczak,
  • Bartłomiej Szafraniak,
  • Jerzy Sanetra and
  • Konstanty W. Marszalek

Beilstein J. Nanotechnol. 2024, 15, 144–156, doi:10.3762/bjnano.15.14

Graphical Abstract
  • -transporting layers [24], active absorbing layers, and other components [25][26]. Inorganic quantum dots are considered substitutes for fullerene acceptors. Their biggest advantages are a tunable band gap, various absorption spectra, and comparatively high mobility of carriers [27][28]. The application of
  • : The imaginary part function is described by: where Eg is the band gap of the material, E0 is the peak in the joint density of states, Θ is the Heaviside theta function, Γ is the broadening parameter, and A is a prefactor. The refractive indices and extinction coefficients as functions of the
  • , QD520, QD580, QD600, and QD640, respectively. According to Hummon et al. [52] the CdSe valence-band edge was determined to be −6.8 eV, from thin-film UPS and photoluminescence measurements. The CdSe conduction-band edge was determined by the photonic band gap (2.0–4.8 eV). The valence- and conduction
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Published 02 Feb 2024

Assessing phytotoxicity and tolerance levels of ZnO nanoparticles on Raphanus sativus: implications for widespread adoptions

  • Pathirannahalage Sahan Samuditha,
  • Nadeesh Madusanka Adassooriya and
  • Nazeera Salim

Beilstein J. Nanotechnol. 2024, 15, 115–125, doi:10.3762/bjnano.15.11

Graphical Abstract
  • in the main band gap of ZnO, Zn 3d→O 2p [20]. The larger average diameter (122.4 nm) than that of the SEM images (70 nm) is due to the fact that particles in solutions are generally larger than those directly seen via microscopy techniques [33]. The increased average diameter and polydispersity index
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Published 23 Jan 2024

Josephson dynamics and Shapiro steps at high transmissions: current bias regime

  • Artem V. Galaktionov and
  • Andrei D. Zaikin

Beilstein J. Nanotechnol. 2024, 15, 51–56, doi:10.3762/bjnano.15.5

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  • junctions, this phenomenological model can be microscopically justified only at temperatures in the vicinity of the critical temperature Tc. As one goes away from Tc, the number of quasiparticles above the superconducting gap decreases exponentially and, hence, no dissipative currents at subgap voltages and
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Published 11 Jan 2024

Measurements of dichroic bow-tie antenna arrays with integrated cold-electron bolometers using YBCO oscillators

  • Leonid S. Revin,
  • Dmitry A. Pimanov,
  • Alexander V. Chiginev,
  • Anton V. Blagodatkin,
  • Viktor O. Zbrozhek,
  • Andrey V. Samartsev,
  • Anastasia N. Orlova,
  • Dmitry V. Masterov,
  • Alexey E. Parafin,
  • Victoria Yu. Safonova,
  • Anna V. Gordeeva,
  • Andrey L. Pankratov,
  • Leonid S. Kuzmin,
  • Anatolie S. Sidorenko,
  • Silvia Masi and
  • Paolo de Bernardis

Beilstein J. Nanotechnol. 2024, 15, 26–36, doi:10.3762/bjnano.15.3

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  • ] (Figure 1a). The basic element of the receiving matrix is a dipole bow-tie antenna, in the gap of which the CEB is embedded (Figure 1b). This matrix is located on a silicon substrate, which is 260 µm thick. Since the operation of the CEB in the matrix is assumed to be in the voltage bias mode, the
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Published 04 Jan 2024

TEM sample preparation of lithographically patterned permalloy nanostructures on silicon nitride membranes

  • Joshua Williams,
  • Michael I. Faley,
  • Joseph Vimal Vas,
  • Peng-Han Lu and
  • Rafal E. Dunin-Borkowski

Beilstein J. Nanotechnol. 2024, 15, 1–12, doi:10.3762/bjnano.15.1

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  • . Alignment of the stencil mask in a flip-chip configuration with the sample under clean room conditions prior to metal deposition plays an important role as a single dust particle can increase the gap between the mask and the sample up to about 100-fold, thereby increasing the shadowing effect greatly. KOH
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Published 02 Jan 2024

A bifunctional superconducting cell as flux qubit and neuron

  • Dmitrii S. Pashin,
  • Pavel V. Pikunov,
  • Marina V. Bastrakova,
  • Andrey E. Schegolev,
  • Nikolay V. Klenov and
  • Igor I. Soloviev

Beilstein J. Nanotechnol. 2023, 14, 1116–1126, doi:10.3762/bjnano.14.92

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  • example, for the parameters l = 2 and D = 0.001, corresponding to the adiabatic control region with symmetric magnetic flux (see Figure 2c), the energy gap between ground and first excited states attains its minimum value equal to during increase and decrease of the external flux (the common form of the
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Published 21 Nov 2023

Dual-heterodyne Kelvin probe force microscopy

  • Benjamin Grévin,
  • Fatima Husainy,
  • Dmitry Aldakov and
  • Cyril Aumaître

Beilstein J. Nanotechnol. 2023, 14, 1068–1084, doi:10.3762/bjnano.14.88

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  • confinement in the vertical direction and their smooth surfaces with atomic thickness control, very precise control over the optical gap and exciton energy of NSs can be achieved through chemical synthesis, making them very interesting
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Published 07 Nov 2023

Isolation of cubic Si3P4 in the form of nanocrystals

  • Polina K. Nikiforova,
  • Sergei S. Bubenov,
  • Vadim B. Platonov,
  • Andrey S. Kumskov,
  • Nikolay N. Kononov,
  • Tatyana A. Kuznetsova and
  • Sergey G. Dorofeev

Beilstein J. Nanotechnol. 2023, 14, 971–979, doi:10.3762/bjnano.14.80

Graphical Abstract
  • disordered semiconductor material would be to find the energy at which the attenuation coefficient exceeds 104 cm−1 (the optical gap estimated this way amounts to 2.3 eV). All of these observations disprove earlier theoretical assumptions of defective zinc blende Si3P4 as being a narrow-bandgap semiconductor
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Published 26 Sep 2023

Antibody-conjugated nanoparticles for target-specific drug delivery of chemotherapeutics

  • Mamta Kumari,
  • Amitabha Acharya and
  • Praveen Thaggikuppe Krishnamurthy

Beilstein J. Nanotechnol. 2023, 14, 912–926, doi:10.3762/bjnano.14.75

Graphical Abstract
  • that 13 targeted NPs had been progressed into clinical trials in 2013; however, their therapeutic efficacy in humans has not been proven yet [123]. The available literature portrays a picture of a potential translational gap between preclinical and clinical studies. So far, no ACNPs have been approved
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Published 04 Sep 2023

Industrial perspectives for personalized microneedles

  • Remmi Danae Baker-Sediako,
  • Benjamin Richter,
  • Matthias Blaicher,
  • Michael Thiel and
  • Martin Hermatschweiler

Beilstein J. Nanotechnol. 2023, 14, 857–864, doi:10.3762/bjnano.14.70

Graphical Abstract
  • printers (e.g., Nanoscribe Quantum X platforms) producing polymer masters. The increased scan speed and throughput are the result of new supporting technologies coming to market, such as replacing piezoelectric stages with galvanometric mirrors. These new technologies continue to decrease the gap in
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Perspective
Published 15 Aug 2023

Biomimetics on the micro- and nanoscale – The 25th anniversary of the lotus effect

  • Matthias Mail,
  • Kerstin Koch,
  • Thomas Speck,
  • William M. Megill and
  • Stanislav N. Gorb

Beilstein J. Nanotechnol. 2023, 14, 850–856, doi:10.3762/bjnano.14.69

Graphical Abstract
  • material through a few steps. In the first step, a molten polypropylene layer is laminated onto a carrier film and run over rollers to cool down. Then the combined laminate is forced through a gap between a hot sandblasted roller and a cold smooth one. The surface roughness and temperature difference
  • create the hairy structured surface on the polypropylene side. In the final step, the structured film is separated from the carrier. The authors were able to set the hair length and density with the usual industrial control variables of speed, temperature, and gap width. The obtained result was a very
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Published 03 Aug 2023

Control of morphology and crystallinity of CNTs in flame synthesis with one-dimensional reaction zone

  • Muhammad Hilmi Ibrahim,
  • Norikhwan Hamzah,
  • Mohd Zamri Mohd Yusop,
  • Ni Luh Wulan Septiani and
  • Mohd Fairus Mohd Yasin

Beilstein J. Nanotechnol. 2023, 14, 741–750, doi:10.3762/bjnano.14.61

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  • the size histograms. Figure 3a and Figure 3b show the temperatures and CNT diameter distributions for methane diffusion flame and premixed flame, respectively. For the diffusion flame synthesis, a clear gap in the average temperature of around 100 °C is observed for the CNT growth regions below and
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Published 21 Jun 2023

Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectives

  • Mattia da Lisca,
  • José Alvarez,
  • James P. Connolly,
  • Nicolas Vaissiere,
  • Karim Mekhazni,
  • Jean Decobert and
  • Jean-Paul Kleider

Beilstein J. Nanotechnol. 2023, 14, 725–737, doi:10.3762/bjnano.14.59

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  • is set at mid-gap, whereas it is moved towards the valence (conduction) band if the ratio of acceptor to donor DOS is larger (smaller) than 1 [24]. Results KPFM cross-sectional investigation under dark conditions The cross section of the sample was first investigated by KPFM under dark conditions
  • growth processes. The InP:nid layers fabricated at III–V Lab usually present an intrinsic n-type doping of the order of 1015 cm−3, which results in shallow donor energy levels within the energy gap. Since the intentional Zn p-type doping concentration is much greater than this residual n-type doping
  • reported in Figure 6. In this specific case, the charge neutrality level of surface defects is set at mid-gap. Thus, increasing the surface defect densities will produce a pinning of the Fermi level at the neutrality level of the surface states and the energy of valence and conduction bands will appear
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Published 14 Jun 2023

Humidity-dependent electrical performance of CuO nanowire networks studied by electrochemical impedance spectroscopy

  • Jelena Kosmaca,
  • Juris Katkevics,
  • Jana Andzane,
  • Raitis Sondors,
  • Liga Jasulaneca,
  • Raimonds Meija,
  • Kiryl Niherysh,
  • Yelyzaveta Rublova and
  • Donats Erts

Beilstein J. Nanotechnol. 2023, 14, 683–691, doi:10.3762/bjnano.14.54

Graphical Abstract
  • interconnects, the distance between the metallic microelectrodes was varied from 2 to 8 µm [26]. The arrays of microelectrode pairs with different gap distances were grouped in four rows on a chip (Figure 1b). The dielectrophoretically aligned nanowires connected the gaps between pairs of microelectrodes
  • the gap (Figure 1d); however, the electrical signal was assumed to come from the CuO nanowire bundles interconnecting the electrodes. Examples of impedance spectra of the CuO networks interconnecting the metal electrodes are shown in Figure 2. Figure 2a shows Nyquist plots measured for variable
  • the nanowire bundle sizes and electrode gap distances, average electrochemical cell widths of 20 µm, cell heights of 1.1 µm and cell lengths of 7.2 µm were estimated. Numerical values for equivalent circuit parameters from fitting the experimental data were calculated per unit area considering the
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Published 05 Jun 2023

Metal-organic framework-based nanomaterials as opto-electrochemical sensors for the detection of antibiotics and hormones: A review

  • Akeem Adeyemi Oladipo,
  • Saba Derakhshan Oskouei and
  • Mustafa Gazi

Beilstein J. Nanotechnol. 2023, 14, 631–673, doi:10.3762/bjnano.14.52

Graphical Abstract
  • accessible states of the metal ions in the framework versus the HOMO–LUMO gap of the organic ligand(s), all have an impact on the emission that results from MOFs. Metal-based luminescence: The incorporation of lanthanide elements into the MOF structure results in the most frequent occurrence of metal-based
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Published 01 Jun 2023

Thermal transport in kinked nanowires through simulation

  • Alexander N. Robillard,
  • Graham W. Gibson and
  • Ralf Meyer

Beilstein J. Nanotechnol. 2023, 14, 586–602, doi:10.3762/bjnano.14.49

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  • solutions of the heat equation serves to better bridge the gap between heat transport phenomena at the macro- and the microscale and shows that multiple factors are significant in kinked systems beyond disruption of ballistic paths, including lattice orientation and phonon reflections. Results and
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Published 15 May 2023

Observation of multiple bulk bound states in the continuum modes in a photonic crystal cavity

  • Rui Chen,
  • Yi Zheng,
  • Xingyu Huang,
  • Qiaoling Lin,
  • Chaochao Ye,
  • Meng Xiong,
  • Martijn Wubs,
  • Yungui Ma,
  • Minhao Pu and
  • Sanshui Xiao

Beilstein J. Nanotechnol. 2023, 14, 544–551, doi:10.3762/bjnano.14.45

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  • regions A and B presented in Figure 2b indicate that the energy of the BIC structures in region A is embedded in the bandgap of region B, thus suppressing in-plane leakage. A transition region with a gap (g = 760 nm) between region A and region B is introduced to compensate the momentum mismatch at the
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Published 27 Apr 2023

Nanoarchitectonics to entrap living cells in silica-based systems: encapsulations with yolk–shell and sepiolite nanomaterials

  • Celia Martín-Morales,
  • Jorge Fernández-Méndez,
  • Pilar Aranda and
  • Eduardo Ruiz-Hitzky

Beilstein J. Nanotechnol. 2023, 14, 522–534, doi:10.3762/bjnano.14.43

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  • easily observable. This indicates that the cyanobacteria encapsulated in yolk–shell microstructures, instead of being directly attached to an inorganic surface, are floating separated by a space between cell wall and silica shell. This gap is crucial to alleviate the previously observed stress
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Published 25 Apr 2023

Molecular nanoarchitectonics: unification of nanotechnology and molecular/materials science

  • Katsuhiko Ariga

Beilstein J. Nanotechnol. 2023, 14, 434–453, doi:10.3762/bjnano.14.35

Graphical Abstract
  • -surface synthesis; Review Introduction Nanotechnology is a game changer that has innovated the course of scientific research. Nanotechnology innovations have unlocked mysteries at the nanoscale [1][2][3]. These research innovations have bridged the gap between nanoscale basic science and materials
  • tip was brought close enough to obtain a single-atom conductance gap, it was retracted and silicon atoms were removed. A perpendicular magnetic field was applied to explore physical phenomena such as Kondo resonance. The nanoarchitectonics of magnetic topological states due to spin polarization in
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Published 03 Apr 2023

Polymer nanoparticles from low-energy nanoemulsions for biomedical applications

  • Santiago Grijalvo and
  • Carlos Rodriguez-Abreu

Beilstein J. Nanotechnol. 2023, 14, 339–350, doi:10.3762/bjnano.14.29

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  • the treatment of a vast number of diseases including cancer and neurological diseases. Continuous effort in the field of designing novel polymeric nanoparticle-based formulations might contribute to reduce the existing gap between preclinical and clinical models. This extensive research might overcome
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Published 13 Mar 2023

Overview of mechanism and consequences of endothelial leakiness caused by metal and polymeric nanoparticles

  • Magdalena Lasak and
  • Karol Ciepluch

Beilstein J. Nanotechnol. 2023, 14, 329–338, doi:10.3762/bjnano.14.28

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  • (CNS), where endothelial cells form the tightest and the most selective blood–brain barrier (BBB) that provides protection against the penetration of harmful substances and pathogens. Other types of connections include adherens junctions, maintained primarily by transmembrane VE-cadherin, and gap
  • achievable utilizing NPs less than 100 nm in diameter. In contrast, active targeting strategies involve functionalizing the NP surface with appropriate ligands specific for receptors overexpressed by the cancer cells (e.g., folic acid and transferrin). The combination of the paracellular gap size resulting
  • actin remodeling process with Y27632 (10 μM) significantly reduced the gap formation induced by Au NPs (white arrowheads). Green and blue fluorescent signals represent the VE-cadherin and nucleus, respectively. Scale bar: 50 μm. Figure 4 was reprinted with permission from [33], Copyright 2017 American
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Published 08 Mar 2023

Bismuth-based nanostructured photocatalysts for the remediation of antibiotics and organic dyes

  • Akeem Adeyemi Oladipo and
  • Faisal Suleiman Mustafa

Beilstein J. Nanotechnol. 2023, 14, 291–321, doi:10.3762/bjnano.14.26

Graphical Abstract
  • inactivate pathogens. The term “photocatalysis” refers to chemical reactions that use light and a photocatalyst (basically a semiconductor). A few of the requirements that an effective photocatalyst system should satisfy include high sunlight absorption, an appropriate gap (1.5–2.8 eV), long-term charge
  • semiconductors are connected, heterojunctions can be divided into three types, namely type-I staggered gaps, type-II straddling gaps, and type-III broken gaps. In a broken gap, the bands do not overlap whereas in a staggered gap, the bandgaps of two semiconductors overlap and may cause band discontinuity. The
  • straddling gap heterojunction system is recognised as the standard heterojunction system where the band edges of one semiconductor are lower than those of the second semiconductor [119][156]. The conduction band position of semiconductor Y is highly negative relative to semiconductor X in type-II
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Published 03 Mar 2023
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