Nanoscale spatial mapping of mechanical properties through dynamic atomic force microscopy

• Zahra Abooalizadeh,
• Leszek Josef Sudak and
• Philip Egberts

Beilstein J. Nanotechnol. 2019, 10, 1332–1347, doi:10.3762/bjnano.10.132

• measurements showed significantly higher variation in the amplitude as the tip traversed over the surface. Despite the higher sensitivity in detecting variations in the surface displacement, the covered step did not appear in any of the on-resonance measurements under the varying normal forces. As this defect

Alloyed Pt₃M (M = Co, Ni) nanoparticles supported on S- and N-doped carbon nanotubes for the oxygen reduction reaction

• Stéphane Louisia,
• Yohann R. J. Thomas,
• Pierre Lecante,
• Marie Heitzmann,
• M. Rosa Axet,
• Pierre-André Jacques and
• Philippe Serp

Beilstein J. Nanotechnol. 2019, 10, 1251–1269, doi:10.3762/bjnano.10.125

• -range order in a sample. Finally, another parameter, measurable by Raman spectroscopy that is relevant to catalyst preparation, is the LD: LD is a typical inter-defect distance that we have measured as described in [41]. A lower ID/IG (and higher LD) is obtained for the CNT sample and a higher ID/IG

Imaging the surface potential at the steps on the rutile TiO₂(110) surface by Kelvin probe force microscopy

• Masato Miyazaki,
• Huan Fei Wen,
• Quanzhen Zhang,
• Yuuki Adachi,
• Jan Brndiar,
• Ivan Štich,
• Yan Jun Li and
• Yasuhiro Sugawara

Beilstein J. Nanotechnol. 2019, 10, 1228–1236, doi:10.3762/bjnano.10.122

• several factors can be considered: a phantom force derived from the flow of a tunneling current [48][49], the local adsorption of molecules, the localization of defect states [55][56], the induced dipole moment [50], the unintentional change in tip–sample distance [57], the electron redistribution due to

• addition, we also observed a drop in CPD on the surface without O2 exposure, indicating that the drop in CPD is not due to O2 adsorption. Third, we analyze the influence of the local pinning of the Fermi level due to defect states [55][56]. In the case of n-type semiconductors, negatively charged defect

• states derived from donor atoms may localize at the steps and increase the work function due to upward band bending. In contrast, for p-type semiconductors positively charged defect states from acceptor atoms may localize at the steps and decrease the work function due to downward band bending. However

Green fabrication of lanthanide-doped hydroxide-based phosphors: Y(OH)₃:Eu³⁺ nanoparticles for white light generation

• Tugrul Guner,
• Anilcan Kus,
• Mehmet Ozcan,
• Aziz Genc,
• Hasan Sahin and
• Mustafa M. Demir

Beilstein J. Nanotechnol. 2019, 10, 1200–1210, doi:10.3762/bjnano.10.119

• medium. Since the rate of hydroxide release is a strong parameter to control the size, size distribution and defect content of the resulting crystal, it is expected to obtain a variation for these values in the case of comparing the effect of HMTA and LiOH on the crystal growth. Moreover, such a

• surrounding the O atoms. It appears that the strongly bonded Eu atoms not only lead to deformation in the lattice structure but also to emergence of defect-like states resulting in additional peaks in the PL spectrum. White light generation by integrating red Y(OH)3:Eu3+ phosphors into a YAG-based color

Pure and mixed ordered monolayers of tetracyano-2,6-naphthoquinodimethane and hexathiapentacene on the Ag(100) surface

• Robert Harbers,
• Timo Heepenstrick,
• Dmitrii F. Perepichka and
• Moritz Sokolowski

Beilstein J. Nanotechnol. 2019, 10, 1188–1199, doi:10.3762/bjnano.10.118

• the formation of well-ordered and defect-free domains, with a structure consistent with the LEED pattern. Domains on flat terraces exhibit a lateral extension of more than 100 nm, but they do not overgrow Ag steps. The molecules appear to lie flat on the surface with a higher apparent height of the

Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2019, 10, 1125–1130, doi:10.3762/bjnano.10.112

• bulk, whereas high-temperature annealing causes a quality degradation of the adjacent interfaces. Light of short wavelengths below 460 nm induces defect generation in the forward measurement and the leakage current increases in the reverse measurement, especially for the low-temperature-annealed device

• adjacent interfaces. The incident photon energy (>2.7 eV) excites the defect generation and the leakage current increases in the devices regardless of heating temperature. By means of the double-scan mode and a positive gate pulse, the NBIS-caused hysteresis of the TFTs annealed at different temperatures

• 7.67 × 1011 cm−2·eV−1 is obtained for the TFT treated at 300 °C. From the comprehensive analysis of the hysteresis and SS results, we concluded that the low-temperature-annealed TFT exhibits the high density of defects in the IGZO bulk, whereas the high-temperature-treated device has severe defect

CuInSe₂ quantum dots grown by molecular beam epitaxy on amorphous SiO₂ surfaces

• Henrique Limborço,
• Pedro M.P. Salomé,
• Rodrigo Ribeiro-Andrade,
• Jennifer P. Teixeira,
• Nicoleta Nicoara,
• Kamal Abderrafi,
• Joaquim P. Leitão,
• Juan C. Gonzalez and
• Sascha Sadewasser

Beilstein J. Nanotechnol. 2019, 10, 1103–1111, doi:10.3762/bjnano.10.110

• formation of a Cu–In–Se ordered defect compound, which has been reported to form along the tie-line of the (Cu2Se)x–(In2Se3)1−x pseudo-binary system [38][39], and which has a bandgap energy very close to that of CuInSe2 [40]. In this compositional region, i.e., low amounts of Cu compared with In, the so

Direct growth of few-layer graphene on AlN-based resonators for high-sensitivity gravimetric biosensors

• Jimena Olivares,
• Teona Mirea,
• Lorena Gordillo-Dagallier,
• Bruno Marco,
• José Miguel Escolano,
• Marta Clement and
• Enrique Iborra

Beilstein J. Nanotechnol. 2019, 10, 975–984, doi:10.3762/bjnano.10.98

• functionalization platforms. On one hand, graphene containing defects (COOH groups) can be covalently functionalized by using an EDC/NHS zero-cross linker, which allows for the binding of primary amines present in proteins and antibodies [11][12]. On the other hand, defect-free graphene is highly hydrophobic, and

• of their characteristics and then functionalized to manufacture gravimetric biosensors, which eliminates the need to use complex transfer methods. Defect-free few-layer graphene was selectively grown through a low-temperature (650 °C) CVD process on Ni [16] thin-film catalysts previously evaporated

• graphene with better quality. The hydrophobic character of the surface was confirmed by dropping water on it with a pipette, which revealed the lack of liquid adhesion to the surface. We also analysed the influence of the process parameters (pressure, Ar/C2H2 flow ratio and cooling rate) on the defect

Rapid, ultraviolet-induced, reversibly switchable wettability of superhydrophobic/superhydrophilic surfaces

• Yunlu Pan,
• Wenting Kong,
• Bharat Bhushan and
• Xuezeng Zhao

Beilstein J. Nanotechnol. 2019, 10, 866–873, doi:10.3762/bjnano.10.87

• are generated on the TiO2 surfaces under UV illumination. The holes lead to the production of oxygen vacancies to enhance the adsorption of hydroxy groups, while the hydroxy groups are replaced by oxygen atoms that have a stronger bond on the defect sites during heating process. However, the change in

Renewable energy conversion using nano- and microstructured materials

• Harry Mönig and
• Martina Schmid

Beilstein J. Nanotechnol. 2019, 10, 771–773, doi:10.3762/bjnano.10.76

• extent, the difficulties in this endeavour originate from the complexity of interfaces nanostructured in three dimensions [22]. Relating the morphology to results from defect-spectroscopy experiments, theoretical models and device performance could be a valuable approach to comprehensively address such

Self-assembly and wetting properties of gold nanorod–CTAB molecules on HOPG

• Imtiaz Ahmad,
• Floor Derkink,
• Tim Boulogne,
• Pantelis Bampoulis,
• Harold J. W. Zandvliet,
• Hidayat Ullah Khan,
• Rahim Jan and
• E. Stefan Kooij

Beilstein J. Nanotechnol. 2019, 10, 696–705, doi:10.3762/bjnano.10.69

• time, whereas the ones on the right portion begin to disappear. We ascribe this disappearance of the stripes to originate from the dislocation of CTAB molecules, creating point defects. Such defects will make the molecules less tightly bound at the defect site, and hence, support the growth of defects

• typical substrate features on a micrometer length scale. Careful analysis of the stripe dimensions, i.e., width, height and spacing, suggest that the stripes consist of multiple hemi-cylinders separated by a distance corresponding to the length of a single CTAB molecule. With increasing scan time, defect

• ) Sequential AFM images depicting the dynamics of self-assembled CTAB stripes on terraces; for reference, a defect which acts as a vacancy nucleation site is indicated by the white arrows. (E) After the large stripes have completely disappeared, a corrugation of the surface is still observed; the inset depicts

Choosing a substrate for the ion irradiation of two-dimensional materials

• Egor A. Kolesov

Beilstein J. Nanotechnol. 2019, 10, 531–539, doi:10.3762/bjnano.10.54

• defect formation mechanisms. The estimations include Monte Carlo simulations for He, Ar, Xe, C, N and Si ions, performed in the incident ion energy range from 100 eV to 250 MeV. Cu, SiO2, SiC and Al2O3 substrates were analyzed. The considered substrate-related defect formation mechanisms are sputtering

• a resultant defect yield [3]; on the other, it can participate in defect formation in the 2D material through energy transfer from sputtered substrate atoms moving through the monolayer [1][4]. When the energy is suitable, these atoms can become embedded into the 2D material crystal lattice, leading

• studies focus more on defect formation energies and probabilities. At the same time, comparing the expected extent of each mechanism can allow not only the exclusion of unwanted effects, but also the use of them for a more controllable engineering of the process, in order to obtain a desired result

Ceria/polymer nanocontainers for high-performance encapsulation of fluorophores

• Kartheek Katta,
• Dmitry Busko,
• Yuri Avlasevich,
• Katharina Landfester,
• Stanislav Baluschev and
• Rafael Muñoz-Espí

Beilstein J. Nanotechnol. 2019, 10, 522–530, doi:10.3762/bjnano.10.53

• excellent antioxidant properties, ideal for applications such as water-gas shift catalysis [40], combustion catalysis [41], oxygen ion conductors, and solid-oxide fuel cells [42]. Due to the valence and oxygen defect properties of cerium(IV) oxide, nanoparticles of this material are also used as efficient

Advanced scanning probe lithography using anatase-to-rutile transition to create localized TiO₂ nanorods

• Julian Kalb,
• Vanessa Knittel and
• Lukas Schmidt-Mende

Beilstein J. Nanotechnol. 2019, 10, 412–418, doi:10.3762/bjnano.10.40

• and might charge the film locally. The charges are likely trapped in defect states generated by the scratching process. Furthermore, the native silicon oxide layer prevents a quick charge transport into the conductive boron-doped silicon substrate. A charged film might attract the precursor more

Sub-wavelength waveguide properties of 1D and surface-functionalized SnO₂ nanostructures of various morphologies

• Venkataramana Bonu,
• Binaya Kumar Sahu,
• Arindam Das,
• Sankarakumar Amirthapandian,
• Sandip Dhara and
• Harish C. Barshilia

Beilstein J. Nanotechnol. 2019, 10, 379–388, doi:10.3762/bjnano.10.37

• behavior was also demonstrated in tapered and surface-functionalized SnO2 NWs. While the tapered waveguide can allow for easy focusing of light, the simple surface chemistry offers selective light propagation by tuning the luminescence. Defect-related PL in NWs is studied using temperature-dependent

• -functionalized NBs are also demonstrated. The emission from these NWs, upon excitation with a 325 nm laser, are shown to originate from the defect emission. Temperature-dependent PL studies were carried out to probe the nature of defects in these NWs. A possible band diagram for the SnO2 NWs is proposed

• (n = 2.1) enables photonic confinement in the NW cavities. The observed waveguide nature arises from defect-controlled luminescence in the visible light range of SnO2 and detailed discussion is provided in the photoluminescence study section. For understanding the propagation of luminescence through

Effects of post-lithography cleaning on the yield and performance of CVD graphene-based devices

• Eduardo Nery Duarte de Araujo,
• Thiago Alonso Stephan Lacerda de Sousa,
• Luciano de Moura Guimarães and
• Flavio Plentz

Beilstein J. Nanotechnol. 2019, 10, 349–355, doi:10.3762/bjnano.10.34

• terms of the mobility μc, associated to charged impurities scattering centers, according to [24][25][26]: The lattice defects can be modeled as a deep potential well of radius R, which gives rise to the mobility μd, as: where nd ~ (2RLa)−1 is the defect density and kF corresponds to the Fermi wave

Geometrical optimisation of core–shell nanowire arrays for enhanced absorption in thin crystalline silicon heterojunction solar cells

• Robin Vismara,
• Olindo Isabella,
• Andrea Ingenito,
• Fai Tong Si and
• Miro Zeman

Beilstein J. Nanotechnol. 2019, 10, 322–331, doi:10.3762/bjnano.10.31

• defect removal etching [53], which would dramatically improve the surface passivation. Geometrical study of nanowire arrays To further understand the interaction of light with nanowires, and how the presence of the NW array affects the absorption in the active silicon layer, optical simulations were used

Site-specific growth of oriented ZnO nanocrystal arrays

• Rekha Bai,
• Dinesh K. Pandya,
• Sujeet Chaudhary,
• Veer Dhaka,
• Vladislav Khayrudinov,
• Jori Lemettinen,
• Christoffer Kauppinen and
• Harri Lipsanen

Beilstein J. Nanotechnol. 2019, 10, 274–280, doi:10.3762/bjnano.10.26

• added in the reaction bath, the incorporation of some exotic metal ions in the ZnO lattice may produce some inadvertent defect levels and charge carrier recombination centers, in turn deteriorating some of the important material properties. Moreover, these reactants are responsible for changing the

Study of silica-based intrinsically emitting nanoparticles produced by an excimer laser

• Imène Reghioua,
• Mattia Fanetti,
• Sylvain Girard,
• Diego Di Francesca,
• Simonpietro Agnello,
• Layla Martin-Samos,
• Marco Cannas,
• Matjaz Valant,
• Melanie Raine,
• Marc Gaillardin,
• Nicolas Richard,
• Philippe Paillet,
• Aziz Boukenter,
• Youcef Ouerdane and
• Antonino Alessi

Beilstein J. Nanotechnol. 2019, 10, 211–221, doi:10.3762/bjnano.10.19

• of the silica by facilitating energy absorption processes such as multiphoton absorption or by introducing absorbing point defects. Defect generation in bulk pure silica before nanoparticle production starts is also suggested by our results. Regarding the Ge-doped samples, scanning electron

• in the glass network and the addition of Ge decreases the silica band gap [18][21][22][23]. The presence of Ge is associated with the appearance of new structures of optically active point defects such as the so-called germanium lone pair center (GLPC) [19][24]. This defect is responsible for an

• detecting the Ge atoms with EDX measurements. The suggestion that the addition of Ge atoms (which results in lowering the band-gap and introducing defect species with an absorption band at 5.1 eV) is able to facilitate the nanoparticle generation is confirmed by the high difference (about one order of

Wet chemistry route for the decoration of carbon nanotubes with iron oxide nanoparticles for gas sensing

• Hussam M. Elnabawy,
• Juan Casanova-Chafer,
• Badawi Anis,
• Mostafa Fedawy,
• Mattia Scardamaglia,
• Carla Bittencourt,
• Ahmed S. G. Khalil,
• Eduard Llobet and
• Xavier Vilanova

Beilstein J. Nanotechnol. 2019, 10, 105–118, doi:10.3762/bjnano.10.10

• distribution histograms can be found in Supporting Information File 5, Figure S6). For all the decorated samples we have used the same source of acidic-functionalized MWCNTs. Accordingly, all the MWCNTs used have, more or less, the same defect size and distribution on the side walls. As the amount of iron salt

Pull-off and friction forces of micropatterned elastomers on soft substrates: the effects of pattern length scale and stiffness

• Peter van Assenbergh,
• Marike Fokker,
• Julian Langowski,
• Jan van Esch,
• Marleen Kamperman and
• Dimitra Dodou

Beilstein J. Nanotechnol. 2019, 10, 79–94, doi:10.3762/bjnano.10.8

• pull-off and friction forces, such as defect control and crack trapping, as reported in the literature for hard substrates, seem to disappear on soft substrates. The dimple geometry with a terminal layer generated significantly higher pull-off forces compared to other geometries, presumably due to

• - and/or nanoscale fibrillar geometries have been reported [7], where the flexibility of the individual fibrils leads to a low Eeff [8]. Furthermore, micropatterns with a fibrillar geometry have been shown to have better defect control [9] and better stress distribution [10] compared to smooth adhesives

• material is used for the micropattern, the Eeff is low, leading to better defect control, stress distribution, and contact stiffness compared to micropatterns made of stiffer materials [22]. Also, the strength of the contacts formed between the adhesive and the substrate is affected by the material

Amorphous Ni_xCo_yP-supported TiO₂ nanotube arrays as an efficient hydrogen evolution reaction electrocatalyst in acidic solution

• Yong Li,
• Peng Yang,
• Bin Wang and
• Zhongqing Liu

Beilstein J. Nanotechnol. 2019, 10, 62–70, doi:10.3762/bjnano.10.6

• to large-scale industrial application. Amorphous catalysts intrinsically contain more defect sites which probably work as active centers compared to the crystalline counterparts. A representative work is that by Zhang et al. where they synthesized Ni–Co–P/nickel foam electrodes via a facile

Surface plasmon resonance enhancement of photoluminescence intensity and bioimaging application of gold nanorod@CdSe/ZnS quantum dots

• Siyi Hu,
• Yu Ren,
• Yue Wang,
• Jinhua Li,
• Junle Qu,
• Liwei Liu,
• Hanbin Ma and
• Yuguo Tang

Beilstein J. Nanotechnol. 2019, 10, 22–31, doi:10.3762/bjnano.10.3

• suggests that when metal or chemical materials are doped with QDs, the number of surface trap states (which can lead to exponential PL decay) is affected by the surface passivation and by the degree of quantum confinement. In CdSe/ZnS QDs with higher defect densities, binding with GNRs having very

• . Here, B is a percentage of the lifetime and t is the lifetime. From Figure 4 we can see that the band edge of the QDs is near 500 nm and the band edge of our CdSe/ZnS sample is calculated to be about 2.48 eV, which is larger than the value of 1.76 eV for CdSe, thus the PL of CdSe/ZnS is surface defect

Accurate control of the covalent functionalization of single-walled carbon nanotubes for the electro-enzymatically controlled oxidation of biomolecules

• Naoual Allali,
• Veronika Urbanova,
• Mathieu Etienne,
• Xavier Devaux,
• Martine Mallet,
• Brigitte Vigolo,
• Jean-Joseph Adjizian,
• Chris P. Ewels,
• Sven Oberg,
• Alexander V. Soldatov,
• Edward McRae,
• Yves Fort,
• Manuel Dossot and
• Victor Mamane

Beilstein J. Nanotechnol. 2018, 9, 2750–2762, doi:10.3762/bjnano.9.257

• Raman spectrum of a dispersive defect-induced band, called the D band, around 1350 cm−1. Figure 8 reports the Raman spectra of raw, oxidized and functionalized samples using a laser wavelength of 514 nm. In Figure S3 (Supporting Information File 1), some Raman spectra obtained for the samples using a

Oriented zinc oxide nanorods: A novel saturable absorber for lasers in the near-infrared

• Pavel Loiko,
• Tanujjal Bora,
• Josep Maria Serres,
• Haohai Yu,
• Magdalena Aguiló,
• Francesc Díaz,
• Uwe Griebner,
• Valentin Petrov,
• Xavier Mateos and
• Joydeep Dutta

Beilstein J. Nanotechnol. 2018, 9, 2730–2740, doi:10.3762/bjnano.9.255

• were grown hydrothermally (in oxygen-rich conditions) one can expect the presence of zinc vacancies that have a low formation energy under such conditions. The singly charged zinc vacancy (VZn−1) is typically located at 0.8–0.9 eV above the ZnO valence band (VB) [9][33][34]. This defect site can be a

• of electrons from the conduction band (CB) to the VB of ZnO (band-to-band transition). The violet emission near 0.415 µm can be assigned to the radiative recombination of electrons from a zinc interstitial (Zni) defect level, typically located ≈0.22 eV below the CB, to the VB of ZnO [35]. The PL band

• the singly (VO+1) and doubly charged (VO+2) oxygen vacancy states of ZnO, respectively [36][37][38]. Based on these assignments, a schematic diagram showing the position of the various defect states within the bandgap of ZnO and the corresponding PL lines is presented in Figure 3e. Absorption