Applications of three-dimensional carbon nanotube networks

• Manuela Scarselli,
• Paola Castrucci,
• Francesco De Nicola,
• Ilaria Cacciotti,
• Francesca Nanni,
• Emanuela Gatto,
• Mariano Venanzi and
• Maurizio De Crescenzi

Beilstein J. Nanotechnol. 2015, 6, 792–798, doi:10.3762/bjnano.6.82

• constructing three-dimensional random meshes from their overlapping. Recently, Gui and co-workers [6] fabricated CNT-sponges through a chemical vapor deposition (CVD) process during which a catalyst precursor (ferrocene) dissolved in dichlorobenzene, which acted as carbon precursor, was injected in the reactor

• structural fluctuations give different response to incident light. Conclusion A chemical vapor deposition process can be used to synthesize three-dimensional porous structures composed of CNTs. The obtained CNT material exhibits a sponge-like structure and has a low density. The capability to adsorb and

• thorough study on the correlation between the observed properties and the structural and electronic features of the network is ongoing. Experimental Chemical vapor deposition process for the growth of 3D CNT networks: The chemical vapor deposition process was carried out in a horizontal hot-wall quartz

Morphological and structural characterization of single-crystal ZnO nanorod arrays on flexible and non-flexible substrates

• Omar F. Farhat,
• Mohd M. Halim,
• Mat J. Abdullah,
• Mohammed K. M. Ali and
• Nageh K. Allam

Beilstein J. Nanotechnol. 2015, 6, 720–725, doi:10.3762/bjnano.6.73

• , various methods have been reported in the literature to produce amorphous and polycrystalline ZnO nanomaterials, especially in the form of nanorods. Also, several deposition methods have been reported to fabricate single-crystal ZnO nanorods, such as RF and DC sputtering [6], chemical vapor deposition

Electroburning of few-layer graphene flakes, epitaxial graphene, and turbostratic graphene discs in air and under vacuum

• Andrea Candini,
• Nils Richter,
• Domenica Convertino,
• Camilla Coletti,
• Franck Balestro,
• Wolfgang Wernsdorfer,
• Mathias Kläui and
• Marco Affronte

Beilstein J. Nanotechnol. 2015, 6, 711–719, doi:10.3762/bjnano.6.72

• suppression of conductance fluctuations [14]. Recent works have successfully made use of graphene for the realization of electrodes in molecular devices [10][17]. Specifically, parallel multi-junctions devices have been fabricated in chemical vapor deposition (CVD) graphene by electron beam lithography and

Observation of a photoinduced, resonant tunneling effect in a carbon nanotube–silicon heterojunction

• Carla Aramo,
• Antonio Ambrosio,
• Michelangelo Ambrosio,
• Maurizio Boscardin,
• Paola Castrucci,
• Michele Crivellari,
• Marco Cilmo,
• Maurizio De Crescenzi,
• Francesco De Nicola,
• Emanuele Fiandrini,
• Valentina Grossi,
• Pasqualino Maddalena,
• Maurizio Passacantando,
• Sandro Santucci,
• Manuela Scarselli and
• Antonio Valentini

Beilstein J. Nanotechnol. 2015, 6, 704–710, doi:10.3762/bjnano.6.71

• obtained by growing a continuous layer of multiwall carbon nanotubes on an n-doped silicon substrate. The multiwall carbon nanostructures were grown by a chemical vapor deposition (CVD) technique on a 60 nm thick, silicon nitride layer, deposited on an n-type Si substrate. The heterojunction

• 60 nm of silicon nitride (Si3N4) is grown by plasma-enhanced chemical vapor deposition (PECVD). Two, circular, metallic Ti/Pt electrodes of 1 mm in diameter are placed at a distance of 4 mm from each other (Figure 1a) on the silicon nitride surface. A metallic guard ring, 1 mm wide, serves to inhibit

Simple approach for the fabrication of PEDOT-coated Si nanowires

• Mingxuan Zhu,
• Marielle Eyraud,
• Judikael Le Rouzo,
• Nadia Ait Ahmed,
• Florence Boulc’h,
• Claude Alfonso,
• Philippe Knauth and
• François Flory

Beilstein J. Nanotechnol. 2015, 6, 640–650, doi:10.3762/bjnano.6.65

• individually coated. Various fabrication efforts have been attempted to achieve a true core–shell p–n junction. For example, chemical vapor deposition (CVD) [10][11] and atomic layer deposition (ALD) [12] are methods that can be employed to obtain this type of nanostructured junction, however, they suffer from

A versatile strategy towards non-covalent functionalization of graphene by surface-confined supramolecular self-assembly of Janus tectons

• Ping Du,
• David Bléger,
• Fabrice Charra,
• Vincent Bouchiat,
• David Kreher,
• Fabrice Mathevet and
• André-Jean Attias

Beilstein J. Nanotechnol. 2015, 6, 632–639, doi:10.3762/bjnano.6.64

• upper level, terpyridine unit) can partially explain these features. All of the upper units are size-compatible with the huge footprint value. Finally, the self-assembly of the Janus tectons onto a graphene monolayer, grown by chemical vapor deposition onto a polycrystalline foil, was investigated. As

• illustrate the agreement between all Janus tecton lattices. Figure adapted with permission from [25], copyright 2014 Wiley-VCH Verlag GmbH & Co. Self-assembly on graphene. Drift-corrected STM images obtained in air on a monolayer graphene substrate grown by chemical vapor deposition on a polycrystalline

Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

• Jacques Perrin Toinin,
• Alain Portavoce,
• Khalid Hoummada,
• Michaël Texier,
• Maxime Bertoglio,
• Sandrine Bernardini,
• Marco Abbarchi and
• Lee Chow

Beilstein J. Nanotechnol. 2015, 6, 336–342, doi:10.3762/bjnano.6.32

• electrochemical etching, spark processing or inductively coupled plasma chemical vapor deposition [13][14][15]. Ion implantation is a well-known technique used in the microelectronic industry to dope the active regions of semiconductor devices. Generally, implantation leads to the formation of defects of

X-ray photoelectron spectroscopy of graphitic carbon nanomaterials doped with heteroatoms

• Toma Susi,
• Thomas Pichler and
• Paola Ayala

Beilstein J. Nanotechnol. 2015, 6, 177–192, doi:10.3762/bjnano.6.17

• the Fermi level shift via ARPES [87]. After intercalating hydrogen between the SiC substrate and monolayer graphene, a value of 284.6 eV has been reported [75]. As graphene is commonly grown by chemical vapor deposition on catalytic metals, several XPS measurements on metal surfaces are available

• (N-SWCNT) synthesis was reported by Glerup et al. in 2004 by using arc discharge [111], later followed by laser ablation [112] and many different variations of chemical vapor deposition methods [113][114][115][116][117][118][119][120][121][122][123][124][125] (see also [33][34]). Nitrogen-doped

• graphene (N-graphene) has since been synthesized by using numerous methods, amongst them chemical vapor deposition [126][127], post-synthesis treatments [128][129], and ion implantation [30] (see also [107][130]). Accordingly, there are hundreds of studies that use XPS to study nitrogen doping. However, it

Synthesis of boron nitride nanotubes and their applications

• Saban Kalay,
• Zehra Yilmaz,
• Ozlem Sen,
• Melis Emanet,
• Emine Kazanc and
• Mustafa Çulha

Beilstein J. Nanotechnol. 2015, 6, 84–102, doi:10.3762/bjnano.6.9

• ], and flavin mononucleotides (FMN) [19]. The synthesis of BNNTs was first reported in 1995 [20] by Chopra, based on an arc discharge method. Following the first report, several methods including arc discharge [20][21][22], chemical vapor deposition (CVD) [23][24][25][26], substitution reactions [27][28

• precursor) and MoO3 (as the catalyst) under N2(g) atmosphere at 1500 °C for 30 min [29]. Although this method can be used to produce BNNTs, the outcome is not always pure BNNTs but rather some B- and N-doped CNTs result in addition [48]. Chemical vapor deposition Chemical vapor deposition (CVD) is a well

Si/Ge intermixing during Ge Stranski–Krastanov growth

• Alain Portavoce,
• Khalid Hoummada,
• Antoine Ronda,
• Dominique Mangelinck and
• Isabelle Berbezier

Beilstein J. Nanotechnol. 2014, 5, 2374–2382, doi:10.3762/bjnano.5.246

• concentration reaching ≈15 atom % in the rest of the island. The composition of Ge islands depends on the growth conditions. Ge islands exhibiting a Si-rich core were shown to correspond to growth conditions allowing for near-equilibrium states to be reached, which is more typical for the case of chemical vapor

• deposition [34]. Ge islands exhibiting a Ge-rich core were shown to be related to growth conditions promoting far-from-equilibrium states, controlled by kinetic processes, which is more typical for the case of MBE growth [34]. Equilibrium is reached through free energy minimization, taking into account the

Gas sensing properties of nanocrystalline diamond at room temperature

• Marina Davydova,
• Pavel Kulha,
• Alexandr Laposa,
• Karel Hruska,
• Pavel Demo and
• Alexander Kromka

Beilstein J. Nanotechnol. 2014, 5, 2339–2345, doi:10.3762/bjnano.5.243

• of the NCD sensor is discussed. Finally, a simulation of the distribution of the current density of H-terminated NCD is presented. Results and Discussion Hot plasma microwave PECVD system Microwave plasma chemical vapor deposition is a well-established process for the fast growth of high quality

• growth proceeded in two steps: first, seeding for 1, 2, 5 or 40 min, followed by treatment by with microwave plasma-enhanced chemical vapor deposition (PECVD). The diamond layers were grown either by focused microwave PECVD (Aixtron P6, named as “hot plasma”) or pulsed-linear antenna microwave PECVD

Sequence-dependent electrical response of ssDNA-decorated carbon nanotube, field-effect transistors to dopamine

• Hari Krishna Salila Vijayalal Mohan,
• Jianing An and
• Lianxi Zheng

Beilstein J. Nanotechnol. 2014, 5, 2113–2121, doi:10.3762/bjnano.5.220

• repeated-ssDNA-decorated SWCNT FETs to DA, in the presence and absence of UA. Experimental SWCNT growth and FET fabrication Long, individual SWCNTs were grown on n+-doped Si capped by 1 µm of SiO2, thermally grown via chemical vapor deposition (CVD) using 0.01 M FeCl3 ethanol solution as the catalytic

Effect of channel length on the electrical response of carbon nanotube field-effect transistors to deoxyribonucleic acid hybridization

• Hari Krishna Salila Vijayalal Mohan,
• Jianing An,
• Yani Zhang,
• Chee How Wong and
• Lianxi Zheng

Beilstein J. Nanotechnol. 2014, 5, 2081–2091, doi:10.3762/bjnano.5.217

• chemical vapor deposition (CVD) process at 950 ºC was utilized to grow SWCNTs, in which 0.01 M FeCl3 ethanol solution was used as the catalytic precursor similar to our previous works [22][23]. Fabrication of SWCNT-based FETs We prepared three types of SWCNT-based FETs with different channel lengths, L

Cathode lens spectromicroscopy: methodology and applications

• T. O. Menteş,
• G. Zamborlini,
• A. Sala and
• A. Locatelli

Beilstein J. Nanotechnol. 2014, 5, 1873–1886, doi:10.3762/bjnano.5.198

• vapor deposition (CVD) technique. CVD utilizes transition metal catalysts as a means to promote the dissociative adsorption of gases such as ethylene or methane, which can readily deliver the carbon atoms required for island nucleation and growth. LEEM is widely employed to image the growth process; the

• peak photoelectron current in XPEEM. SPELEEM studies of graphene epilayers LEEM has found ample use in graphene research with its high structural sensitivity and video acquisition rate allowing for dynamic measurements of film growth. In such experiments, graphene is typically obtained by the chemical

Donor–acceptor graphene-based hybrid materials facilitating photo-induced electron-transfer reactions

• Anastasios Stergiou,
• Georgia Pagona and
• Nikos Tagmatarchis

Beilstein J. Nanotechnol. 2014, 5, 1580–1589, doi:10.3762/bjnano.5.170

• exhibiting unique mechanical [1] and electronic properties [2] and can be described as one of the most extensively examined materials of recent years [3][4]. Diverse approaches have been developed to obtain graphene sheets, including the mechanical cleavage of graphite [3], chemical vapor deposition on metal

Fringe structures and tunable bandgap width of 2D boron nitride nanosheets

• Peter Feng,
• Muhammad Sajjad,
• Eric Yiming Li,
• Hongxin Zhang,
• Jin Chu,
• Ali Aldalbahi and
• Gerardo Morell

Beilstein J. Nanotechnol. 2014, 5, 1186–1192, doi:10.3762/bjnano.5.130

• either chemical-solution-derived method or a chemical vapor deposition (CVD) process. Many excellent results have been reported [6][7][8][9]. Systematic and comprehensive reviews of two-dimensional (2D) boron nitride nanostructures: nanosheets, nanoribbons, nanomeshes, and hybrids with graphene have been

Electron-beam induced deposition and autocatalytic decomposition of Co(CO)₃NO

• Florian Vollnhals,
• Martin Drost,
• Fan Tu,
• Esther Carrasco,
• Andreas Späth,
• Rainer H. Fink,
• Hans-Peter Steinrück and
• Hubertus Marbach

Beilstein J. Nanotechnol. 2014, 5, 1175–1185, doi:10.3762/bjnano.5.129

• and film growth, i.e., chemical vapor deposition (CVD) [24]. For Co(CO)3NO, EBID was found up to about 393 K, followed by seeded growth up to about 403 K and spontaneous decomposition at higher temperatures. In the EBID regime, increasing the temperature from 293 to 323 K lowered the carbon content by

Nanocavity crossbar arrays for parallel electrochemical sensing on a chip

• Enno Kätelhön,
• Dirk Mayer,
• Marko Banzet,
• Andreas Offenhäusser and
• Bernhard Wolfrum

Beilstein J. Nanotechnol. 2014, 5, 1137–1143, doi:10.3762/bjnano.5.124

• . Afterwards, the top electrodes are fabricated from an electron-beam evaporated stack of chromium/platinum/titanium stack of the thicknesses 7/50/7 nm. Subsequently, a passivation composed of alternating layers. SiO2/Si3N4/SiO2 is deposited via plasma enhanced chemical vapor deposition [38]. In the next step

Methods for rapid frequency-domain characterization of leakage currents in silicon nanowire-based field-effect transistors

• Tomi Roinila,
• Xiao Yu,
• Jarmo Verho,
• Tie Li,
• Pasi Kallio,
• Matti Vilkko,
• Anran Gao and
• Yuelin Wang

Beilstein J. Nanotechnol. 2014, 5, 964–972, doi:10.3762/bjnano.5.110

• of the authors. The number of studies considering frequency-domain measurements of SiNW FETs is very low. The authors in [9] applied low-frequency noise spectroscopy (LFNS), and characterized generation–recombination centers in silicon nanowires grown by using chemical vapor deposition. Their aim was

Gas sensing with gold-decorated vertically aligned carbon nanotubes

• Prasantha R. Mudimela,
• Mattia Scardamaglia,
• Oriol González-León,
• Nicolas Reckinger,
• Rony Snyders,
• Eduard Llobet,
• Carla Bittencourt and
• Jean-François Colomer

Beilstein J. Nanotechnol. 2014, 5, 910–918, doi:10.3762/bjnano.5.104

• Institute for Materials Science and Engineering, University of Mons, Mons, Belgium MINOS-EMaS, Universitat Rovira i Virgili, Tarragona, Spain 10.3762/bjnano.5.104 Abstract Vertically aligned carbon nanotubes of different lengths (150, 300, 500 µm) synthesized by thermal chemical vapor deposition and

A catechol biosensor based on electrospun carbon nanofibers

• Dawei Li,
• Zengyuan Pang,
• Xiaodong Chen,
• Lei Luo,
• Yibing Cai and
• Qufu Wei

Beilstein J. Nanotechnol. 2014, 5, 346–354, doi:10.3762/bjnano.5.39

• development, various methods used for CNFs preparation are established, such as arc-discharge [21], laser ablation [22], chemical vapor deposition (CVD) methods [23]. Electrospinning, which is known as a facile and convenient process, can produce nanofibers or microfibers with different diameters while using

Tensile properties of a boron/nitrogen-doped carbon nanotube–graphene hybrid structure

• Kang Xia,
• Haifei Zhan,
• Ye Wei and
• Yuantong Gu

Beilstein J. Nanotechnol. 2014, 5, 329–336, doi:10.3762/bjnano.5.37

• in the fields of mechanics, photology, electronics and bio-sensing [1][2]. Through the chemical vapor deposition (CVD) method, a graphene–nanotube hybrid structure (GNHS) has been synthesized recently [3][4][5], which evidently demonstrates an improved performance for the application as field

Modeling and optimization of atomic layer deposition processes on vertically aligned carbon nanotubes

• Nuri Yazdani,
• Vipin Chawla,
• Eve Edwards,
• Vanessa Wood,
• Hyung Gyu Park and
• Ivo Utke

Beilstein J. Nanotechnol. 2014, 5, 234–244, doi:10.3762/bjnano.5.25

• functionalization [19][20][21][22][23][24]. In practice, however, chemical vapor deposition (CVD) grown CNTs are prone to a sufficient density of surface defect sites to allow for the nucleation of the ceramic at discrete points along the surface of the CNT. The ceramic then grows from these nucleation sites until

• dioxide and aluminum oxide. To synthesize our VACNTs, a 3-nm-thick catalyst layer of iron on top of a 20-nm-thick layer of aluminum is deposited through electron beam evaporation onto a silicon wafer. The VACNTs are then grown by chemical vapor deposition in a cold-wall CVD system. The catalyst-covered

Cyclic photochemical re-growth of gold nanoparticles: Overcoming the mask-erosion limit during reactive ion etching on the nanoscale

• Burcin Özdemir,
• Axel Seidenstücker,
• Alfred Plettl and
• Paul Ziemann

Beilstein J. Nanotechnol. 2013, 4, 886–894, doi:10.3762/bjnano.4.100

• were prepared on top of the previously fabricated Au NP by chemical vapor deposition (CVD) rather than immersion of the silica substrates into OTMS solutions. Like immersion the much faster CVD method results in selective reactions of the methoxysilane functional groups with the silanol groups of the

• transferring the loaded inverse micelles onto the SiO2-substrate surface. In order to reduce the precursor into metallic Au and to completely remove the polymeric species, substrates were treated in H2-plasma (90 min at 160 W, Technics Plasma 100-E, Munich). Chemical vapor deposition of OTMS onto Au decorated

Synthesis of boron nitride nanotubes from unprocessed colemanite

• Saban Kalay,
• Zehra Yilmaz and
• Mustafa Çulha

Beilstein J. Nanotechnol. 2013, 4, 843–851, doi:10.3762/bjnano.4.95

• yield, low cost and pure BNNTs. Keywords: boron nitride nanotube; chemical vapor deposition; colemanite; synthesis; Introduction Colemanite (Ca2B6O11·5H2O) is one of the most important compounds of more than 200 different boron ores. All boron ores include boron oxide (B2O3) at varying percentages in

• BNNTs are more toxic than CNTs [13]. The first BNNTs were synthesized by Chopra et al. with the arc-discharge method [14]. Later, the use of chemical vapor deposition (CVD), laser ablation, ball milling, a template-assisted process, and displacement reactions were reported for the synthesis [15][16][17