Design of photonic microcavities in hexagonal boron nitride

• Sejeong Kim,
• Milos Toth and
• Igor Aharonovich

Beilstein J. Nanotechnol. 2018, 9, 102–108, doi:10.3762/bjnano.9.12

• spectral range, which overlap with the ZPLs of SPEs in hBN [24]. We further optimize the structures and model 1D nanobeam photonic crystals that exhibit a Q-factor in excess of ≈20,000. In the light of recent progress in direct-write etching of hBN [25], our results are promising for realization of high Q

Electron-driven and thermal chemistry during water-assisted purification of platinum nanomaterials generated by electron beam induced deposition

• Ziyan Warneke,
• Markus Rohdenburg,
• Jonas Warneke,
• Janina Kopyra and
• Petra Swiderek

Beilstein J. Nanotechnol. 2018, 9, 77–90, doi:10.3762/bjnano.9.10

• be desorbed from the deposit as an intact unit. We propose that such reactions are relevant to the removal of carbon during deposit purification processes assisted by H2O and also to the recently reported electron-induced etching of graphene using an ice layer as resist [17]. Contributions from

The rational design of a Au(I) precursor for focused electron beam induced deposition

• Ali Marashdeh,
• Thiadrik Tiesma,
• Niels J. C. van Velzen,
• Sjoerd Harder,
• Remco W. A. Havenith,
• Jeff T. M. De Hosson and
• Willem F. van Dorp

Beilstein J. Nanotechnol. 2017, 8, 2753–2765, doi:10.3762/bjnano.8.274

• processing (FEBIP) [1][2][3]. In the case of writing a precursor provides the ink, in the case of etching a precursor enables the removal of sample material. The precursors are usually gaseous, although they can also be liquid [4][5]. In the case of gaseous precursors, the gas is delivered to the sample

Patterning of supported gold monolayers via chemical lift-off lithography

• Liane S. Slaughter,
• Kevin M. Cheung,
• Sami Kaappa,
• Huan H. Cao,
• Qing Yang,
• Thomas D. Young,
• Andrew C. Serino,
• Sami Malola,
• Jana M. Olson,
• Stephan Link,
• Hannu Häkkinen,
• Anne M. Andrews and
• Paul S. Weiss

Beilstein J. Nanotechnol. 2017, 8, 2648–2661, doi:10.3762/bjnano.8.265

• patterned Au substrates prior to lift-off (e.g., selective wet etching), or by patterning alkanethiols on Au substrates to be reactive in selected regions but not others (controlled reactivity). In all cases, the regions containing Au–alkanethiolate layers have a sub-nanometer apparent height, which was

• first round of CLL. Here, topographically patterned PDMS stamps were used to lift-off hydroxyl-terminated self-assembled alkanethiols (Figure S1, Supporting Information File 1) [1][9]. Following this CLL step, Au in the lifted-off (exposed) regions was removed by wet etching to form Au features in the

Direct writing of gold nanostructures with an electron beam: On the way to pure nanostructures by combining optimized deposition with oxygen-plasma treatment

• Domagoj Belić,
• Mostafa M. Shawrav,
• Emmerich Bertagnolli and
• Heinz D. Wanzenboeck

Beilstein J. Nanotechnol. 2017, 8, 2530–2543, doi:10.3762/bjnano.8.253

• break-up of precursor molecules. By varying the experimental parameters one can alter the deposition process and hence change the properties of deposited material, such as its shape, structure, and elemental composition. We note that no etching by the F found in the precursor was observed. Firstly, we

Strategy to discover full-length amyloid-beta peptide ligands using high-efficiency microarray technology

• Clelia Galati,
• Natalia Spinella,
• Lucio Renna,
• Danilo Milardi,
• Francesco Attanasio,
• Michele Francesco Maria Sciacca and
• Corrado Bongiorno

Beilstein J. Nanotechnol. 2017, 8, 2446–2453, doi:10.3762/bjnano.8.243

• silicon is used as the starting material. After standard cleaning, etching in diluted HF (aq), and rinsing in deionized water, single crystalline, Czochralski grown, silicon(100) slices were mounted in a conventional furnace operating at atmospheric pressure. Thermal oxidation was performed at a

• [41][43]. The O2-plasma cleaning was performed using the plasma etching system, Sentech 591, using 60 sccm of oxygen fluxing for 2 min. The resulting epoxysilane coating provide a proper surface for the immobilization of peptides in a microarray format. Moreover, due to the low fluorescence background

Comparing postdeposition reactions of electrons and radicals with Pt nanostructures created by focused electron beam induced deposition

• Julie A. Spencer,
• Michael Barclay,
• Miranda J. Gallagher,
• Robert Winkler,
• Ilyas Unlu,
• Yung-Chien Wu,
• Harald Plank,
• Lisa McElwee-White and
• D. Howard Fairbrother

Beilstein J. Nanotechnol. 2017, 8, 2410–2424, doi:10.3762/bjnano.8.240

• in the presence of O2 gas, or by using both precursor and O2 gas simultaneously during deposition, nearly 100 atom % Pt deposits could be generated from FEBID nanostructures created from the commonly used precursor MeCpPtMe3. Simultaneous deposition and etching produced void-free structures with

• using H2O. Geier et al. [13] demonstrated that for FEBID structures created from MeCpPtMe3, postdeposition electron beam irradiation in the presence of a local water pressure of 10 Pa results in a highly efficient electron-limited etching regime. This process enabled purification rates of better than 5

• the mobility of Pt–H species) as compared to the rest of the PtCl2 structure. Another possible explanation is that carbonaceous deposits, which are more resistant to subsequent AH etching, are formed in regions of the PtCl2 deposit initially exposed to electrons during EDS analysis. In summary, AH is

Robust procedure for creating and characterizing the atomic structure of scanning tunneling microscope tips

• Sumit Tewari,
• Koen M. Bastiaans,
• Milan P. Allan and
• Jan M. van Ruitenbeek

Beilstein J. Nanotechnol. 2017, 8, 2389–2395, doi:10.3762/bjnano.8.238

• -temperature annealing as for many semiconductors. However, a well defined tip structure at the atomic scale is still hard to achieve. Mechanical grinding [1], electro-polishing [11] or electrochemical etching [12][13] are standard ex situ methods for preparing microscopically sharp tips. The tip apex can be

Increasing the stability of DNA nanostructure templates by atomic layer deposition of Al₂O₃ and its application in imprinting lithography

• Hyojeong Kim,
• Kristin Arbutina,
• Anqin Xu and
• Haitao Liu

Beilstein J. Nanotechnol. 2017, 8, 2363–2375, doi:10.3762/bjnano.8.236

• the exposed substrate through shadow gaps was etched to generate trenches with linewidths of sub-10 nm resolution [32]. By differentiating the adsorption of water between DNA nanostructures and a SiO2 substrate, the rates of HF vapor-phase etching of the SiO2 substrate [33] and of chemical vapor

• . Similarly, DNA nanostructures were also used in the anhydrous HF vapor etching of a SiO2 substrate, producing positive imprints of the DNA nanostructures with sub-10 nm resolution [35]. DNA nanostructures were also converted into carbon nanostructures with shape conservation by atomic layer deposition of

Fabrication of gold-coated PDMS surfaces with arrayed triangular micro/nanopyramids for use as SERS substrates

• Jingran Zhang,
• Yongda Yan,
• Peng Miao and
• Jianxiong Cai

Beilstein J. Nanotechnol. 2017, 8, 2271–2282, doi:10.3762/bjnano.8.227

• ] were also produced by a lithography-based method and reproducible plastic substrates were machined using different nanoimprinting methods [26]. For example, Courvoisier et al. [4] designed and fabricated an accurate inverted array of squares as a template on a silicon wafer via EBL and wet etching

• approaches. They produced arrays of tipless pyramids using an optical UV curing method. Lee et al. [24] used anodic aluminum oxide as a template for transferring patterns onto the polydimethylsiloxane (PDMS) substrate surfaces using a dry etching method. In this work, the detection of DNA molecules showed a

Angstrom-scale flatness using selective nanoscale etching

• Takashi Yatsui,
• Hiroshi Saito and
• Katsuyuki Nobusada

Beilstein J. Nanotechnol. 2017, 8, 2181–2185, doi:10.3762/bjnano.8.217

• realization of flat surfaces on the angstrom scale is required in advanced devices to avoid loss due to carrier (electron and/or photon) scattering. In this work, we have developed a new surface flattening method that involves near-field etching, where optical near-fields (ONFs) act to dissociate the

• molecules. ONFs selectively generated at the apex of protrusions on the surface selectively etch the protrusions. To confirm the selective etching of the nanoscale structure, we compared near-field etching using both gas molecules and ions in liquid phase. Using two-dimensional Fourier analysis, we found

• that near-field etching is an effective way to etch on the scale of less than 10 nm for both wet and dry etching techniques. In addition, near-field dry etching may be effective for the selective etching of nanoscale structures with large mean free path values. Keywords: Angstrom-scale flatness

Synthesis and characterization of noble metal–titania core–shell nanostructures with tunable shell thickness

• Bartosz Bartosewicz,
• Marta Michalska-Domańska,
• Malwina Liszewska,
• Dariusz Zasada and
• Bartłomiej J. Jankiewicz

Beilstein J. Nanotechnol. 2017, 8, 2083–2093, doi:10.3762/bjnano.8.208

• . All purchased chemicals were used as received without further purification. Ultrapure deionized (DI) water (18.2 MΩ·cm at 25 °C, Hydrolab, Poland) was used throughout the experiments. All glassware was treated with titania etching solution (HF/HNO3/H2O = 1:4:15 v/v/v) for 5 min and rinsed with DI

A systematic study of the controlled generation of crystalline iron oxide nanoparticles on graphene using a chemical etching process

• Peter Krauß,
• Jörg Engstler and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2017, 8, 2017–2025, doi:10.3762/bjnano.8.202

• without the need for any additional post-processing. During the course of our transfer studies, we found that the etching process that is usually employed can lead to contamination of the graphene layer with the Faradaic etchant component FeCl3, resulting in the deposition of iron oxide FexOy

• substrate [11][12][13]. A major challenge towards the usage of graphene is the isolation from this planar metal substrate [14][15][16]. Besides mechanical exfoliation [17][18] and electrochemical delamination [19][20][21], polymer-supported etching of the substrate is generally used to transfer CVD graphene

• onto various substrates [14][22][23][24]. The transfer of CVD graphene by chemical etching is based on the redox reaction between the metal catalyst and an oxidizing agent in aqueous solution [22][23][25][26][27][28]. As the metal dissolves in the etchant solution, graphene remains floating on the

Evaluation of preparation methods for suspended nano-objects on substrates for dimensional measurements by atomic force microscopy

• Petra Fiala,
• Daniel Göhler,
• Benno Wessely,
• Michael Stintz,
• Giovanni Mattia Lazzerini and
• Andrew Yacoot

Beilstein J. Nanotechnol. 2017, 8, 1774–1785, doi:10.3762/bjnano.8.179

• were used in this study for the characterization of the preparation methods. The chosen nano-objects belong to the material group that was identified as important for risk assessment or as reference nanomaterials [9]. The preparations were performed by means of hydrophilic track etching membranes made

• . During the pre-conditioning of the substrates, the track etching membranes were rinsed with ultrapure water, and the silicon substrates were cleaned using either a wet chemical cleaning procedure or a dry cleaning procedure. The wet cleaning procedure was performed in accordance with the first step of

• etching membranes (Membrane Filtration) and accordingly on Si and Si coated substrates (others) relating to their preparation quality grade. Results of AFM sharp tip measurements Figure 8 provides exemplarily one AFM result concerning the height measurement of spherical SiO2 particles (100 nm) on Si

Fluorination of vertically aligned carbon nanotubes: from CF₄ plasma chemistry to surface functionalization

• Claudia Struzzi,
• Mattia Scardamaglia,
• Jean-François Colomer,
• Alberto Verdini,
• Luca Floreano,
• Rony Snyders and
• Carla Bittencourt

Beilstein J. Nanotechnol. 2017, 8, 1723–1733, doi:10.3762/bjnano.8.173

• chemistry; surface chemistry; Introduction Tetrafluoromethane (CF4) plasma emerged as a strategic tool when exploiting the ability of CFx radicals to promote etching of a variety of substrates frequently used in the manufacturing of microelectronic devices [1]. In the CF4 plasma, CFx radicals are primarily

• nanotubes [18][19][20][21]. This carbon allotrope exhibits a low-reactive surface; therefore, plasma parameters can be adjusted to promote a controlled fluorination, avoiding the chemical etching of carbon atoms from the sample. The fluorination entails the conversion of the sp2 hybridization into sp3 and

Effect of the fluorination technique on the surface-fluorination patterning of double-walled carbon nanotubes

• Lyubov G. Bulusheva,
• Yuliya V. Fedoseeva,
• Emmanuel Flahaut,
• Jérémy Rio,
• Christopher P. Ewels,
• Victor O. Koroteev,
• Gregory Van Lier,
• Denis V. Vyalikh and
• Alexander V. Okotrub

Beilstein J. Nanotechnol. 2017, 8, 1688–1698, doi:10.3762/bjnano.8.169

• bonding strength between fluorine and DWCNT surface realizing through different methods. This resulted in fluorine loss together with carbon accompanied by partial surface etching of the DWCNTs fluorinated by F2 and BrF3, while no detectable wall destruction occurred for the plasma-fluorinated DWCNTs. We

Air–water interface of submerged superhydrophobic surfaces imaged by atomic force microscopy

• Markus Moosmann,
• Thomas Schimmel,
• Wilhelm Barthlott and
• Matthias Mail

Beilstein J. Nanotechnol. 2017, 8, 1671–1679, doi:10.3762/bjnano.8.167

• surface. The samples were produced in a two-step molding process [20] (see Experimental section) and were based on silicon surfaces with micro-pillars structured by reactive ion etching (RIE). Tegotop® was applied as a superhydrophobic coating. Figure 3a shows an SEM image (top view) of the final epoxy

• -pillar samples The master for the epoxy resin samples used in this study was a silicon wafer covered with micrometer-scale structures created by reactive ion etching (RIE), which were ordered from the Center of Advanced European Studies and Research (Caesar) in Bonn, Germany. The structures were

Process-specific mechanisms of vertically oriented graphene growth in plasmas

• Subrata Ghosh,
• Shyamal R. Polaki,
• Niranjan Kumar,
• Sankarakumar Amirthapandian,
• Mohamed Kamruddin and
• Kostya (Ken) Ostrikov

Beilstein J. Nanotechnol. 2017, 8, 1658–1670, doi:10.3762/bjnano.8.166

• along with supersaturation of the carbon source and a simultaneous etching process by nascent hydrogen [21][22][23][24][25]. Based on the experimental observations, a phenomenological four-stage model was proposed [24]. In the plasma-assisted growth of carbon nanostructures, the hydrocarbon precursor

• energetic ions and chemical etching [52]. However, the mechanisms of the growth and the formation of the final chemical structure and morphology of the VGNs were not explained. Therefore, the scope of the present investigation is to optimize the plasma process parameters and relate them with the morphology

• this study, NG structures were not observed below 600 °C and this is explained by adverse etching of graphene by hydrogen radicals in the plasma, which dominates over the graphene growth at lower temperatures [46]. Figure 1c shows the vertical sheets nucleated from the grain boundaries. This is

Parylene C as a versatile dielectric material for organic field-effect transistors

• Tomasz Marszalek,
• Maciej Gazicki-Lipman and
• Jacek Ulanski

Beilstein J. Nanotechnol. 2017, 8, 1532–1545, doi:10.3762/bjnano.8.155

• , namely charge trapping caused by mechanical bending [33]. In another work, ultra-thin Parylene C insulating layers were fabricated on Au gate electrodes by reducing the parylene film thickness to 18 nm with the help of oxygen plasma etching [33]. This procedure enabled the manufacturing of OFET devices

Micro- and nano-surface structures based on vapor-deposited polymers

• Hsien-Yeh Chen

Beilstein J. Nanotechnol. 2017, 8, 1366–1374, doi:10.3762/bjnano.8.138

• uniformity with reduced array-to-array variation [19]. Vapor-phased plasma polymerization to prepare polyacrylic acid has also used to pattern and functionalize microfluidic devices based on wet and dry etching techniques [20]. Combining plasma polymerization and lithographical processes has also been used

Hierarchically structured nanoporous carbon tubes for high pressure carbon dioxide adsorption

• Julia Patzsch,
• Deepu J. Babu and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2017, 8, 1135–1144, doi:10.3762/bjnano.8.115

• selective hydrofluoric acid (HF) etching was used, which leads to pure carbon tubes. Due to their high surface area and porous nature, the carbon tubes are an interesting material for gas storage applications. Consequently, high pressure gas adsorption studies of carbon dioxide were carried out on this

• after the etching steps. Physical characterisation methods Nitrogen adsorption–desorption isotherms were measured at 77 K with a Nova 3000e (QuantaChrome) instrument after sample pretreatment at 250 °C for 18 h. The specific surface area was calculated by the Brunauer–Emmett–Teller (BET) equation from a

• transformed into carbon. If the silica shell is removed by etching, self-supporting carbon tubes 4 remain (Figure 2d). Due to the carbonization of the molten PS, the remaining carbon forms an interconnected porous carbon framework structure which allows the infiltration of the etching solution. Silicon

The integration of graphene into microelectronic devices

• Guenther Ruhl,
• Sebastian Wittmann,
• Matthias Koenig and
• Daniel Neumaier

Beilstein J. Nanotechnol. 2017, 8, 1056–1064, doi:10.3762/bjnano.8.107

• the ex situ transfer by reinforcing the graphene layer with a polymer film, e.g., poly(methyl methacrylate) (PMMA), and etching off the Cu growth substrate. There are several options for subsequent graphene deposition onto the final substrates discussed in [19] (Figure 1). Focusing on wafer-level

• methods are using a catalytic metal layer, one approach is the in situ removal of the metal layer between graphene and dielectric substrate by wet etching. In order to attach the graphene film to the substrate an additional adhesion mechanism has to be involved. One approach is the use of capillary forces

• carbon dissolves in Ni with a substantial solubility and during cooling down it segregates to the Ni–substrate interface where it precipitates as graphene. After etching off the nickel, the graphene film is exposed. The complete process sequence is shown in Figure 2 [29]. By choosing the appropriate

Assembly of metallic nanoparticle arrays on glass via nanoimprinting and thin-film dewetting

• Sun-Kyu Lee,
• Sori Hwang,
• Yoon-Kee Kim and
• Yong-Jun Oh

Beilstein J. Nanotechnol. 2017, 8, 1049–1055, doi:10.3762/bjnano.8.106

• , high-resolution lithography techniques – such as electron beam lithography (EBL) or laser interference lithography (LIL) – with a conventional multistep etching process on a silicon wafer are still required to fabricate templates with nanostructured surface topographies that determine the features of

CVD transfer-free graphene for sensing applications

• Chiara Schiattarella,
• Sten Vollebregt,
• Tiziana Polichetti,
• Brigida Alfano,
• Ettore Massera,
• Maria Lucia Miglietta,
• Girolamo Di Francia and
• Pasqualina Maria Sarro

Beilstein J. Nanotechnol. 2017, 8, 1015–1022, doi:10.3762/bjnano.8.102

• throughout the whole fabrication process: after CVD growth, after Mo etching and after lift-off. The absence of contamination has then been attested by EDX analysis. In Figure 1 a representative optical micrograph of the fabricated devices is reported. The graphene layer (dark strip highlighted in red) and

• of graphene down to micrometre-size dimensions. A photo-lithographic process, combined with SF6 dry etching, has been used to shape the Mo in the desired form. Graphene layers have then been grown on pre-patterned Mo/SiO2/Si substrate by means of AIXTRON BlackMagic Pro equipment, setting the

Near-field surface plasmon field enhancement induced by rippled surfaces

• Mario D’Acunto,
• Francesco Fuso,
• Ruggero Micheletto,
• Makoto Naruse,
• Francesco Tantussi and
• Maria Allegrini

Beilstein J. Nanotechnol. 2017, 8, 956–967, doi:10.3762/bjnano.8.97

• ) that we will use in the SIE picture. Here, we are using the notation that , where and are unit vectors along the x and y directions. Since many patterning techniques, including ballistic deposition processes (such as molecular beam epitaxy or IBS) or plasma etching, are characterized by dynamic