Introducing third-generation periodic table descriptors for nano-qRASTR modeling of zebrafish toxicity of metal oxide nanoparticles

• Supratik Kar and
• Siyun Yang

Beilstein J. Nanotechnol. 2024, 15, 1142–1152, doi:10.3762/bjnano.15.93

• decrease in toxicity. For instance, SnO2 has a %EI of 7.12 while having a total metal electronegativity of 3.56. In contrast, the total metal electronegativity of WO3 is 1.65, and its observed %EIzebrafish is 42.72. The descriptor gives a measure of the molecular bulk, which has a positive correlation to

Intermixing of MoS₂ and WS₂ photocatalysts toward methylene blue photodegradation

• Maryam Al Qaydi,
• Nitul S. Rajput,
• Michael Lejeune,
• Abdellatif Bouchalkha,
• Mimoun El Marssi,
• Steevy Cordette,
• Chaouki Kasmi and
• Mustapha Jouiad

Beilstein J. Nanotechnol. 2024, 15, 817–829, doi:10.3762/bjnano.15.68

• to degrade 10 mg/L of MB [23]. Moreover, when MoS2 is mixed with SnO2, the MB photodegradation reaches up to ≈99.5% within 5 min. This rapid degradation occurred when 400 mg/L of the catalyst was used to degrade 3.2 mg/L of MB [24]. These results concerned materials fabricated using the hydrothermal

Aero-ZnS prepared by physical vapor transport on three-dimensional networks of sacrificial ZnO microtetrapods

• Veaceslav Ursaki,
• Tudor Braniste,
• Victor Zalamai,
• Emil Rusu,
• Vladimir Ciobanu,
• Vadim Morari,
• Daniel Podgornii,
• Pier Carlo Ricci,
• Rainer Adelung and
• Ion Tiginyanu

Beilstein J. Nanotechnol. 2024, 15, 490–499, doi:10.3762/bjnano.15.44

• metal oxides [1][9][10]. Metal oxides include TiO2, ZnO, Al2O3, WO3, Cu2O, CuO, SnO2, Fe2O3, Bi2O3, Ag3PO4, BiWO4, BiVO4, BiFeO3, and SeTiO3, while chalcogenides are represented by ZnS, ZnSe, CdS, PbS, CdSe, SnS2, and Bi2S3. Among porous semiconductor materials, recently developed super-lightweight ones

• . 05-0566 [29][30] and to a tetragonal rutile cassiterite SnO2 phase according to PDF 21-1250 and JCPDS card no. 41-1445 [31][32]. Whole powder pattern fitting (WPPF) weight fraction analysis revealed that the ZnS phase is 100% of zinc blende structure. The analysis of the XRD pattern in Figure 2b

• demonstrates that the SnO2 phase content in the sample produced in the 8 h procedure has decreased. At the same time, the WPPF weight fraction analysis performed for this sample (Figure 3) revealed that the ZnS component consists of two phases, namely 60% of a phase with cubic zinc blende structure and 40% of

Exploring the relationships between physiochemical properties of nanoparticles and cell damage to combat cancer growth using simple periodic table-based descriptors

• Joyita Roy and
• Kunal Roy

Beilstein J. Nanotechnol. 2024, 15, 297–309, doi:10.3762/bjnano.15.27

• tot_metal_alpha value (13.6) and the highest zeta potential (46 mV); in contrast, SnO2 NPs with a descriptor value of 2.88 have a zeta potential value of −20.5 mV. QSPR model for cell damage Model 2 (PLS) Model 2 utilizes eight descriptors to evaluate crucial attributes that can impact cell damage. Equation 2

A combined gas-phase dissociative ionization, dissociative electron attachment and deposition study on the potential FEBID precursor [Au(CH₃)₂Cl]₂

• Elif Bilgilisoy,
• Ali Kamali,
• Thomas Xaver Gentner,
• Gerd Ballmann,
• Sjoerd Harder,
• Hans-Peter Steinrück,
• Hubertus Marbach and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2023, 14, 1178–1199, doi:10.3762/bjnano.14.98

• % Cl, 42 atom % C, and 5 atom % Sn. Considering the ratio of the SnMNN signal to that of the remaining OKLL signal from the deposit, compared to that expected for stannic oxide [38] SnO2, it is clear that the Sn impurity is predominantly elemental rather than on the oxidized form. A magnification of a

Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone

• Kristjan Kalam,
• Peeter Ritslaid,
• Tanel Käämbre,
• Aile Tamm and
• Kaupo Kukli

Beilstein J. Nanotechnol. 2023, 14, 1085–1092, doi:10.3762/bjnano.14.89

• Kristjan Kalam Peeter Ritslaid Tanel Kaambre Aile Tamm Kaupo Kukli Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia 10.3762/bjnano.14.89 Abstract Polycrystalline SnO2 thin films were grown by atomic layer deposition (ALD) on SiO2/Si(100) substrates from SnI4 and O3

• implied the formation of single-phase oxide in the films grown at temperatures above 300 °C. Appropriateness of the mentioned precursor system to the preparation of SnO2 films was established. Keywords: atomic layer deposition; tin oxide; tin tetraiodide; Introduction Atomic layer-deposited SnO2 films

• have been studied from many perspectives. For example, one can mention anodes for Li-ion batteries [1], gas sensors [2], catalytic activities [3], and stable buffer [4] or base [5] layers in solar cells. More applications can be found, when SnO2 is considered as constituent of a nanostructure or a

Nanomaterials for photocatalysis and applications in environmental remediation and renewable energy

• Viet Van Pham and
• Wee-Jun Ong

Beilstein J. Nanotechnol. 2023, 14, 722–724, doi:10.3762/bjnano.14.58

• ]. Semiconducting photocatalyst nanomaterials, such as SnO2, TiO2, MoS2, g-C3N4, and Bi-nanostructures have been proven efficient for a range of applications, including organic pollutant removal, NOx degradation, renewable energy production, and waste-to-energy conversion [15][17][18]. Figure 1 shows a general

Electrical and optical enhancement of ITO/Mo bilayer thin films via laser annealing

• Abdelbaki Hacini,
• Ahmad Hadi Ali,
• Nurul Nadia Adnan and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2022, 13, 1589–1595, doi:10.3762/bjnano.13.133

• (Quorum Q300T D) at 10−4 mbar pressure. The magnetron sputter contains a double target with high purity (approx. 99.99%). The first target is for sputtering ITO (90 wt % In2O3 and 10 wt % SnO2), and the second target is for sputtering Mo. Before deposition, the Si and the glass samples were cut into

Recent trends in Bi-based nanomaterials: challenges, fabrication, enhancement techniques, and environmental applications

• Vishal Dutta,
• Ankush Chauhan,
• Ritesh Verma,
• C. Gopalkrishnan and
• Van-Huy Nguyen

Beilstein J. Nanotechnol. 2022, 13, 1316–1336, doi:10.3762/bjnano.13.109

• also reported. The Fenelon group successfully fabricated SnO2 and Bi2S3–Bi25 composites via a facile hydrothermal technique followed by thermal breakdown [27]. The photocatalytic performance of the fabricated ternary composite photocatalyst was 2.75 times higher than that of pristine Bi2S3 for the

• photodegradation of RhB under visible light. Their research also revealed that 15% SnO2 precursor solution was the most effective concentration for achieving a photocatalytic degradation efficiency of 80% after 180 min of exposure to visible light. Photogenerated holes were found to be responsible for the

Enhanced electronic transport properties of Te roll-like nanostructures

• E. R. Viana,
• N. Cifuentes and
• J. C. González

Beilstein J. Nanotechnol. 2022, 13, 1284–1291, doi:10.3762/bjnano.13.106

• a well-defined geometry with a uniform rectangular cross section along their entire length. This particular morphology makes them a strong candidate for providing a thorough understanding of dimensionally confined transport phenomena, as presented in SnO2 NBs. Moreover, strain-induced polarization

• ][27]. This model has been successfully used to analyze the electronic properties of single semiconductor NWs of different cross sections and materials such as ZnO [27], SnO2 [16][19], and GaAs [17][18][28]. In this case, the calculations were done using μh = gmL2/(VdsCox) and p = 1/(eρμh), where gm

Temperature and chemical effects on the interfacial energy between a Ga–In–Sn eutectic liquid alloy and nanoscopic asperities

• Yujin Han,
• Pierre-Marie Thebault,
• Corentin Audes,
• Xuelin Wang,
• Haiwoong Park,
• Jian-Zhong Jiang and
• Arnaud Caron

Beilstein J. Nanotechnol. 2022, 13, 817–827, doi:10.3762/bjnano.13.72

• %, while the atomic fractions of tin and indium bound as oxides (SnO or SnO2, and In2O3) did not significantly change. Given the atomic concentrations in Table 3, the native mixed surface oxide of the Ga–In–Sn eutectic liquid consists of GaO2–Sn2O3–In2O3 or (Ga0.8Sn0.14In0.06)O2. After heating, this

A chemiresistive sensor array based on polyaniline nanocomposites and machine learning classification

• Jiri Kroutil,
• Alexandr Laposa,
• Ali Ahmad,
• Jan Voves,
• Vojtech Povolny,
• Ladislav Klimsa,
• Marina Davydova and
• Miroslav Husak

Beilstein J. Nanotechnol. 2022, 13, 411–423, doi:10.3762/bjnano.13.34

• (carbon nanotubes (CNT), SnO2, TiO2) materials in a gas sensors based on nanocomposite layers with good sensitivity, temperature stability, reversibility, which was operating at room temperature. Herein, we extended our study by applying other nanocomposite sensing layers, namely PANI/ZnO, PANI/WO3

Tin dioxide nanomaterial-based photocatalysts for nitrogen oxide oxidation: a review

• Viet Van Pham,
• Hong-Huy Tran,
• Thao Kim Truong and
• Thi Minh Cao

Beilstein J. Nanotechnol. 2022, 13, 96–113, doi:10.3762/bjnano.13.7

• Thanh District, Ho Chi Minh City, 700000, Viet Nam 10.3762/bjnano.13.7 Abstract Semiconducting SnO2 photocatalyst nanomaterials are extensively used in energy and environmental research because of their outstanding physical and chemical properties. In recent years, nitrogen oxide (NOx) pollutants have

• received particular attention from the scientific community. The photocatalytic NOx oxidation will be an important contribution to mitigate climate change in the future. Existing review papers mainly focus on applying SnO2 materials for photocatalytic oxidation of pollutants in the water, while studies on

• the decomposition of gas pollutants are still being developed. In addition, previous studies have shown that the photocatalytic activity regarding NOx decomposition of SnO2 and other materials depends on many factors, such as physical structure and band energies, surface and defect states, and

Morphology-driven gas sensing by fabricated fractals: A review

• Vishal Kamathe and
• Rupali Nagar

Beilstein J. Nanotechnol. 2021, 12, 1187–1208, doi:10.3762/bjnano.12.88

• branched objects [49][55][56]. Figure 3 shows different morphologies of large-scale SnO2 fab-fracs grown under controlled lab conditions. The study of the specific surface becomes important for understanding the growth of such structures and investigating the gas sensor characteristics when such structures

• to some excellent articles on hierarchical gas sensors that address such geometries [8][30][33][37]. Tin oxide-based fractals Yin et al. reported SnO2 nanoparticles with and without platinum (Pt) decoration synthesized using a sol–gel hydrothermal technique for gas sensing applications [63]. Figure

•  5a,b shows SEM images of samples calcined at 550 °C, corresponding to pure SnO2 and Pt-SnO2, respectively. The box-counting method estimated D = 2.43 for pure SnO2 and 2.49 for SnO2 decorated with 1 wt % Pt, respectively. Figure 5c shows the H2 sensing response curve of 1 atom % Pt-SnO2. In

Assessment of the optical and electrical properties of light-emitting diodes containing carbon-based nanostructures and plasmonic nanoparticles: a review

• Keshav Nagpal,
• Erwan Rauwel,
• Frédérique Ducroquet and
• Protima Rauwel

Beilstein J. Nanotechnol. 2021, 12, 1078–1092, doi:10.3762/bjnano.12.80

• a large scale. For this purpose, transparent conducting oxides (TCO), such as thin films of In2O3, SnO2, ZnO, and their mixtures have been extensively studied [30][31][32][33][34]. The most widely studied TCO is indium tin oxide (ITO), which possesses good physical properties, such as high optical

• transmittance (>80% in the visible region) and low sheet resistance (≈20 Ω/sq). Typically, ITO consists of 90% In2O3 and 10% SnO2 by weight. Kim et al. have grown ITO on glass substrates with varying Sn concentrations [35]. Although ITO is a conventional favorite current-spreading layer, it nevertheless suffers

• a uniform thin film. Some of the commonly used polymers and metal oxides for ETL are PBD, PBD-PMMA, BND, ZnO, SnO2, and TiO2 [69][70][71]. Improvements in the device performance have been reported, when using polymer–MWNT nanocomposite-based ETL. For example, Fournet et al. have investigated the

Nickel nanoparticle-decorated reduced graphene oxide/WO₃ nanocomposite – a promising candidate for gas sensing

• Ilka Simon,
• Alexandr Savitsky,
• Rolf Mülhaupt,
• Vladimir Pankov and
• Christoph Janiak

Beilstein J. Nanotechnol. 2021, 12, 343–353, doi:10.3762/bjnano.12.28

• -type MOS and an n-type MOS (p–n heterojunctions) [6][18]. The p-type MOS NiO is not a very popular gas sensing material, because p-type MOS have, in general, a lower gas response than n-type MOS, such as WO3, ZnO, or SnO2 [22][23]. But p-type MOS are ideal doping agents [24]. NiO combined with WO3

• performance of MOS@rGO can further be improved by either chemical doping or by combination with a transition metal as ternary component [38]. Iron oxide-doped WO3 films showed improved NO2 sensing at room temperature, when adding a layer of 16 nm p-type rGO on the metal oxide film [39]. Nickel-doped SnO2

• [42]. With the addition of Ag nanoparticles to a dispersion of SnO2/rGO, the working temperature was dropped from 55 °C to room temperature in the gas sensing of NO2 [43]. (For further examples and comparison with other gas sensors see Table S1 in Supporting Information File 1.) The ternary Ni@rGO/WO3

ZnO and MXenes as electrode materials for supercapacitor devices

• Ameen Uddin Ammar,
• Ipek Deniz Yildirim,
• Feray Bakan and
• Emre Erdem

Beilstein J. Nanotechnol. 2021, 12, 49–57, doi:10.3762/bjnano.12.4

• used, for example, in water purification, as electrochemical actuators, as transparent conductive electrodes, and as biosensors [21][22][28]. To enhance the performance of MXene supercapacitors, a variety of materials, such as graphene and carbon nanotubes (CNTs), tin(IV) oxide (SnO2), and iron(III

Atomic layer deposited films of Al₂O₃ on fluorine-doped tin oxide electrodes: stability and barrier properties

• Hana Krýsová,
• Michael Neumann-Spallart,
• Hana Tarábková,
• Pavel Janda,
• Ladislav Kavan and
• Josef Krýsa

Beilstein J. Nanotechnol. 2021, 12, 24–34, doi:10.3762/bjnano.12.2

• better the blocking. This approach has been used previously [18][19][20] for testing semiconducting nonporous blocking layers of oxides (TiO2 or SnO2) deposited onto FTO. In this way, direct electron transfer between the redox couple in the electrolyte solution and the conducting substrate (i.e., FTO

• buffer, pH 7.2) are shown in Figure S6 (Supporting Information File 1). The change in the surface nanoscale morphology can be explained by the replacement of SnO2 by Sn. Figure 8 and Table 2 show that increasing thickness values of ALD alumina layers led to an increase in the efficacy of suppression of

Structural and electronic properties of SnO₂ doped with non-metal elements

• Jianyuan Yu,
• Yingeng Wang,
• Yan Huang,
• Xiuwen Wang,
• Jing Guo,
• Jingkai Yang and
• Hongli Zhao

Beilstein J. Nanotechnol. 2020, 11, 1321–1328, doi:10.3762/bjnano.11.116

• SnO2 doped with non-metal elements (F, S, C, B, and N) were studied using first-principles calculations. The theoretical results show that doping of non-metal elements cannot change the structure of SnO2 but result in a slight expansion of the lattice volume. The most obvious finding from the analysis

• is that F-doped SnO2 has the lowest defect binding energy. The doping with B and S introduced additional defect energy levels within the forbidden bandgap, which improved the crystal conductivity. The Fermi level shifts up due to the doping with B, F, and S, while the Fermi level of SnO2 doped with C

• or N has crossed the impurity level. The Fermi level of F-doped SnO2 is inside the conduction band, and the doped crystal possesses metallicity. The optical properties of SnO2 crystals doped with non-metal elements were analyzed and calculated. The SnO2 crystal doped with F had the highest

Transition from freestanding SnO₂ nanowires to laterally aligned nanowires with a simulation-based experimental design

• Jasmin-Clara Bürger,
• Sebastian Gutsch and
• Margit Zacharias

Beilstein J. Nanotechnol. 2020, 11, 843–853, doi:10.3762/bjnano.11.69

• volumetric flow leads to a higher species dilution. Based on our numerical results, we were able to successfully grow laterally aligned SnO2 nanowires out of gold film edges and gold nanoparticles on a-plane sapphire substrates. In our experiments a horizontal 2-zone tube furnace was used. The generation of

• Sn gas was achieved by a carbothermal reduction of SnO2 powder. However, we observed no elongation of the nanowire length with an increase of the process time. Nevertheless, an alternating gas exchange between an inert gas (Ar) and an oxygen-containing process atmosphere yielded an elongation of the

• result, Choi et al. were able to measure an improved sensitivity for gas sensors made of tin oxide nanowires (SnO2 NWs) in comparison with powder-based SnO2 thin films [9]. For the use of NWs in electronic and sensor devices, freestanding NWs often have to be scratched off of the growth substrate

Structural optical and electrical properties of a transparent conductive ITO/Al–Ag/ITO multilayer contact

• Aliyu Kabiru Isiyaku,
• Ahmad Hadi Ali and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2020, 11, 695–702, doi:10.3762/bjnano.11.57

• appear to be dominant without any traces of SnO2, Sn or SnO peaks. During deposition of the IAAI films, the kinetic energy of the sputtered atoms arriving at the substrate is low, which leads to the amorphous structure. The kinetic energy of the Ag atoms is higher and the Ag film crystallizes already

Synthesis and acetone sensing properties of ZnFe₂O₄/rGO gas sensors

• Kaidi Wu,
• Yifan Luo,
• Ying Li and
• Chao Zhang

Beilstein J. Nanotechnol. 2019, 10, 2516–2526, doi:10.3762/bjnano.10.242

• concentration. Due to their excellent properties and cost efficiency, gas sensors based on metal oxide semiconductors, such as ZnO [5], SnO2 [6], WO3 [7], TiO2 [8], Er-SnO2 [9], Au-In2O3 [10], GO-WO3 [11] and Ni-SnO2/G [12] have been widely studied until now. However, their sensing properties regarding low

Semitransparent Sb₂S₃ thin film solar cells by ultrasonic spray pyrolysis for use in solar windows

• Jako S. Eensalu,
• Atanas Katerski,
• Erki Kärber,
• Lothar Weinhardt,
• Monika Blum,
• Clemens Heske,
• Wanli Yang,
• Ilona Oja Acik and
• Malle Krunks

Beilstein J. Nanotechnol. 2019, 10, 2396–2409, doi:10.3762/bjnano.10.230

• nontransparent 125 nm Ag back contact [21]. TiO2 is the most commonly used electron transport material (ETM) in Sb2S3 solar cells [18][25][26][27][28][29][30][31][32]. SnO2 and ZnO have also been employed as the planar ETM, with varying success [33][34]. Conjugated polymers, e.g., P3HT, Spiro-OMeTAD (2,2',7,7

Polyvinylpyrrolidone as additive for perovskite solar cells with water and isopropanol as solvents

• Chen Du,
• Shuo Wang,
• Xu Miao,
• Wenhai Sun,
• Yu Zhu,
• Chengyan Wang and
• Ruixin Ma

Beilstein J. Nanotechnol. 2019, 10, 2374–2382, doi:10.3762/bjnano.10.228

• solar cells, and the preparation method is relatively simple. Overall, it is a low-cost, low-toxicity preparation method to commercialize perovskite solar cells. Experimental Materials Lead nitrate, polyvinylpyrrolidone, chlorobenzene and isopropanol were purchased from Aladdin. SnO2 colloid was

• . Device fabrication Prior to spin-coating, the ITO glass substrate was cleaned sequentially with detergent, acetone, ethanol, deionized water, each for 15 min, then dried with a nitrogen flow, and then cleaned with UV/ozone for 20 min. A thin layer of SnO2 nanoparticles was spin-coated on the ITO

• cm2. All samples were measured in air (25 °C). Results and Discussion Figure 1 illustrates how the PSCs were prepared. The PSCs of this study comprises a SnO2 electron transfer layer (ETL), a MAPbI3 coating, a Spiro-OMeTAD HTL as well as a gold electrode. In a first step, the perovskite layer was

High-temperature resistive gas sensors based on ZnO/SiC nanocomposites

• Vadim B. Platonov,
• Marina N. Rumyantseva,
• Alexander S. Frolov,
• Alexey D. Yapryntsev and
• Alexander M. Gaskov

Beilstein J. Nanotechnol. 2019, 10, 1537–1547, doi:10.3762/bjnano.10.151

• oxides, such as SnO2, ZnO, WO3, and In2O3, that have been widely used in resistive gas sensors cannot be applied directly, primarily due to the drift of the sensor parameters at temperatures above 500 °C. The stability of nanostructured semiconductor oxides at high temperature can be enhanced by creating