A low-kiloelectronvolt focused ion beam strategy for processing low-thermal-conductance materials with nanoampere currents

• Annalena Wolff,
• Nico Klingner,
• William Thompson,
• Yinghong Zhou,
• Jinying Lin and
• Yin Xiao

Beilstein J. Nanotechnol. 2024, 15, 1197–1207, doi:10.3762/bjnano.15.97

• not a large number of recent papers published looking at the underlying physics in the field of focused ion beams. A broader look at current literature on heat transfer induced by particle beams highlights that heat damage is not only problematic for FIB processing, but also presents challenges for

Ion beam processing of DNA origami nanostructures

• Leo Sala,
• Agnes Zerolová,
• Violaine Vizcaino,
• Alain Mery,
• Alicja Domaracka,
• Hermann Rothard,
• Philippe Boduch,
• Dominik Pinkas and
• Jaroslav Kocišek

Beilstein J. Nanotechnol. 2024, 15, 207–214, doi:10.3762/bjnano.15.20

• method for nanofabrication such as FIB, which also happens to cover the low-energy interaction regime. The method is widely available as a complement to scanning electron microscopes. Focused ion beams allow for both subtractive and additive nanoscale manufacturing [31] and can also be used for chemical

Ultralow-energy amorphization of contaminated silicon samples investigated by molecular dynamics

• Grégoire R. N. Defoort-Levkov,
• Alan Bahm and
• Patrick Philipp

Beilstein J. Nanotechnol. 2023, 14, 834–849, doi:10.3762/bjnano.14.68

• possible, which includes a minimization of the thickness of the amorphous layer. Focused ion beams of such low energy are generally hard to achieve due to the difficulty of focusing. Some current instruments can utilize focused beams of 500 eV to perform chemical analysis of materials [21], and it is

Influence of water contamination on the sputtering of silicon with low-energy argon ions investigated by molecular dynamics simulations

• Grégoire R. N. Defoort-Levkov,
• Alan Bahm and
• Patrick Philipp

Beilstein J. Nanotechnol. 2022, 13, 986–1003, doi:10.3762/bjnano.13.86

• , Luxembourg Thermo Fisher Scientific, Hillsboro, OR, 97124, USA 10.3762/bjnano.13.86 Abstract Focused ion beams (FIB) are a common tool in nanotechnology for surface analysis, sample preparation for electron microscopy and atom probe tomography, surface patterning, nanolithography, nanomachining, and

• sputtered largely depends on the incidence angle. This fraction is the largest for incidence angles between 70 and 80° defined with respect to the sample surface. Overall, it changes from 25% to 65%. Keywords: angle dependency; argon ions; contamination; focused ion beams; ion bombardment; low energy

• ; molecular dynamics; silicon; simulations; water; Introduction Focused ion beams (FIB) play an increasingly important role in materials research areas such as nanoanalysis (e.g., secondary ion mass spectrometry (SIMS) [1][2][3] and sample preparation for transmission electron microscopy (TEM) [4], atom

Effect of lubricants on the rotational transmission between solid-state gears

• Huang-Hsiang Lin,
• Jonathan Heinze,
• Alexander Croy,
• Rafael Gutiérrez and
• Gianaurelio Cuniberti

Beilstein J. Nanotechnol. 2022, 13, 54–62, doi:10.3762/bjnano.13.3

• either solid-state gears or molecular gears, which are created by top-down approaches (e.g., using focused ion beams [23] or electron beams [24][25] to etch the substrate) or bottom-up approaches such as chemical synthesis [26][27]. The ultimate goal for those miniaturized gears is to implement nanoscale

The patterning toolbox FIB-o-mat: Exploiting the full potential of focused helium ions for nanofabrication

• Victor Deinhart,
• Lisa-Marie Kern,
• Jan N. Kirchhof,
• Sabrina Juergensen,
• Joris Sturm,
• Enno Krauss,
• Thorsten Feichtner,
• Sviatoslav Kovalchuk,
• Michael Schneider,
• Dieter Engel,
• Bastian Pfau,
• Bert Hecht,
• Kirill I. Bolotin,
• Stephanie Reich and
• Katja Höflich

Beilstein J. Nanotechnol. 2021, 12, 304–318, doi:10.3762/bjnano.12.25

• nanometer range is heavily sought after. One promising candidate for ultraprecise nanofabrication is focused ion beam (FIB) machining. Focused ion beams locally remove material based on physical sputtering with a large degree of flexibility due to advanced beam control. FIB patterning is a direct single

• -based devices encoding bits using nanoscale domain walls or skyrmions [4]. The magnetic properties of thin magnetic films and multilayers can directly be modified in a controlled manner by low-dose ion irradiation. Local variation of the dose using masks or focused ion beams leads to pure magnetic

Bio-imaging with the helium-ion microscope: A review

• Matthias Schmidt,
• James M. Byrne and
• Ilari J. Maasilta

Beilstein J. Nanotechnol. 2021, 12, 1–23, doi:10.3762/bjnano.12.1

• , HIM is not just an imaging technique. The ability to use the instrument for milling biological objects as small as viruses offers unique opportunities which are not possible with more conventional focused ion beams, such as gallium. Several pioneering technical developments, such as methods to couple

Imaging and milling resolution of light ion beams from helium ion microscopy and FIBs driven by liquid metal alloy ion sources

• Nico Klingner,
• Gregor Hlawacek,
• Paul Mazarov,
• Wolfgang Pilz,
• Fabian Meyer and
• Lothar Bischoff

Beilstein J. Nanotechnol. 2020, 11, 1742–1749, doi:10.3762/bjnano.11.156

• junctions in high-temperature superconductors [11]. Although HIM is highly suitable for imaging and nanometer-scale patterning, there is a need of focused ion beams other than helium or neon with comparable properties. Alternative developments were made using laser-cooled magneto-optical trap ion sources

Out-of-plane surface patterning by subsurface processing of polymer substrates with focused ion beams

• Serguei Chiriaev,
• Luciana Tavares,
• Vadzim Adashkevich,
• Arkadiusz J. Goszczak and
• Horst-Günter Rubahn

Beilstein J. Nanotechnol. 2020, 11, 1693–1703, doi:10.3762/bjnano.11.151

• irradiation-induced mechanical strain in the patterning process are elaborated and discussed. Keywords: direct patterning; focused helium ion beam; out-of-plane nanopatterning; polymers; thin films; Introduction Micro- and nanofabrication with focused ion beams (FIBs) is currently a subject of strong

Size limits of magnetic-domain engineering in continuous in-plane exchange-bias prototype films

• Alexander Gaul,
• Daniel Emmrich,
• Timo Ueltzhöffer,
• Henning Huckfeldt,
• Hatice Doğanay,
• Johanna Hackl,
• Muhammad Imtiaz Khan,
• Daniel M. Gottlob,
• Gregor Hartmann,
• André Beyer,
• Dennis Holzinger,
• Slavomír Nemšák,
• Claus M. Schneider,
• Armin Gölzhäuser,
• Günter Reiss and
• Arno Ehresmann

Beilstein J. Nanotechnol. 2018, 9, 2968–2979, doi:10.3762/bjnano.9.276

• sensor applications [3][4][5], for stray field design [6][7] and particle transport in lab-on-chip systems [8][9][10][11], or in spintronics and magnonics [12][13][14]. Currently available techniques for domain patterning are either based on focused ion beams (FIB) [15][16][17], ion implantation [18][19

High-throughput synthesis of modified Fresnel zone plate arrays via ion beam lithography

• Kahraman Keskinbora,
• Umut Tunca Sanli,
• Margarita Baluktsian,
• Corinne Grévent,
• Markus Weigand and
• Gisela Schütz

Beilstein J. Nanotechnol. 2018, 9, 2049–2056, doi:10.3762/bjnano.9.194

• alternative FZP fabrication techniques gained some attraction thanks to the improvements in layer deposition [15][16][17][18][19][20][21][22][23][24][25], etching methods [26], and fabrication methods based on focused ion beams [18][21][27][28][29][30][31]. One particular implementation of focused ion beams

Ion beam profiling from the interaction with a freestanding 2D layer

• Ivan Shorubalko,
• Kyoungjun Choi,
• Michael Stiefel and
• Hyung Gyu Park

Beilstein J. Nanotechnol. 2017, 8, 682–687, doi:10.3762/bjnano.8.73

• cascades, featured by no interaction volume. Thus, the patterning resolution is directly set by the beam diameters. Here, we demonstrate pattern resolution beyond the beam size and precise profiling of the focused ion beams. We find out that FIB exposure time of individual pixels can influence the

• ; Introduction Focused ion beams (FIBs) have been increasingly exploited in nanotechnology for more than 40 years [1]. One of the most important parameters of FIBs in this respect is the beam diameter near the focal point. The most commonly used method for estimating the beam size is measuring a characteristic

• good agreement with previously reported values [14]. Helium focused ion beams are characterized in a similar way to determine the previously unknown profile and possible asymmetries in it. Under certain conditions triangular He beam shapes are observed, possibly attributable to the trimer nature of the