Strain-induced bandgap engineering in 2D ψ-graphene materials: a first-principles study

• Kamal Kumar,
• Nora H. de Leeuw,
• Jost Adam and
• Abhishek Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 1440–1452, doi:10.3762/bjnano.15.116

• (EBSs)) of these materials becomes essential to expand their utility in energy-related and optoelectronic applications [18][19]. Engineering of the electronic gap not only broadens the possible use of 2D materials but also enables them to satisfy the demand for ultramodern technologies [20]. Bandgap

Various CVD-grown ZnO nanostructures for nanodevices and interdisciplinary applications

• The-Long Phan,
• Le Viet Cuong,
• Vu Dinh Lam and
• Ngoc Toan Dang

Beilstein J. Nanotechnol. 2024, 15, 1390–1399, doi:10.3762/bjnano.15.112

• DMSs, these nanostructures will be beneficial to the development of new ZnO-based materials for photocatalytic [25], biomedical [26], gas sensing [27][28], and flexible electronic/optoelectronic applications [29][30]. They are usually fabricated by chemical vapour deposition (CVD) or solid-vapour phase

Out-of-plane polarization induces a picosecond photoresponse in rhombohedral stacked bilayer WSe₂

• Guixian Liu,
• Yufan Wang,
• Zhoujuan Xu,
• Zhouxiaosong Zeng,
• Lanyu Huang,
• Cuihuan Ge and
• Xiao Wang

Beilstein J. Nanotechnol. 2024, 15, 1362–1368, doi:10.3762/bjnano.15.109

• intrinsic photoresponse time of approximately 3 ps. The ultrafast response time remains consistent across varying detection powers, demonstrating environmental stability and highlighting the potential in optoelectronic applications. Our study presents an effective strategy for enhancing the response time of

Controllable physicochemical properties of WO_x thin films grown under glancing angle

• Rupam Mandal,
• Aparajita Mandal,
• Alapan Dutta,
• Rengasamy Sivakumar,
• Sanjeev Kumar Srivastava and
• Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

• sputtering for optoelectronic applications. A glancing angle of 87° is employed to grow films of different thicknesses, which are then exposed to post-growth annealing. Detailed local probe analyses in terms of morphology and work function of WOx films are carried out to investigate thickness-dependent

• range of tunability in structural, optical, and electrical properties of NS-WOx thin films through controlling microstructure and film thickness. This will be useful for optoelectronic applications in photovoltaics where such films are used as a carrier-selective contact. AFM height images of (a–d) as

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS₂ thin films with domains much smaller than the laser spot size

• Felipe Wasem Klein,
• Jean-Roch Huntzinger,
• Vincent Astié,
• Damien Voiry,
• Romain Parret,
• Houssine Makhlouf,
• Sandrine Juillaguet,
• Jean-Manuel Decams,
• Sylvie Contreras,
• Périne Landois,
• Ahmed-Azmi Zahab,
• Jean-Louis Sauvajol and
• Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

• X–M–X or MX2 triatomic layer, where X is a chalcogen atom (e.g., sulfur, selenium, or tellurium) and M is a transition metal atom (e.g., molybdenum or tungsten) [10]. Among the layered TMD materials, molybdenum disulfide, MoS2, is of particular interest in optoelectronic applications because of its

Dual-heterodyne Kelvin probe force microscopy

• Benjamin Grévin,
• Fatima Husainy,
• Dmitry Aldakov and
• Cyril Aumaître

Beilstein J. Nanotechnol. 2023, 14, 1068–1084, doi:10.3762/bjnano.14.88

• . Thus, cubic lead halide perovskite nanocrystals have been widely studied and used for various optoelectronic applications [22][23]. More recently, ultra-thin nanoplatelets or nanosheets (several nm thick and hundreds nm large) with very appealing properties were reported [24]. Due to the 2D quantum

A visible-light photodetector based on heterojunctions between CuO nanoparticles and ZnO nanorods

• Doan Nhat Giang,
• Nhat Minh Nguyen,
• Duc Anh Ngo,
• Thanh Trang Tran,
• Le Thai Duy,
• Cong Khanh Tran,
• Thi Thanh Van Tran,
• Phan Phuong Ha La and
• Vinh Quang Dang

Beilstein J. Nanotechnol. 2023, 14, 1018–1027, doi:10.3762/bjnano.14.84

• nanoparticles and ZnO nanorods obtained via a simple and cost-effective synthesis process has great potential for optoelectronic applications. Keywords: CuO nanoparticles; heterojunction; optoelectronics; visible-light photodetector; ZnO nanorods; Introduction Optoelectronics is a field to accelerate the

Plasmon-enhanced photoluminescence from TiO₂ and TeO₂ thin films doped by Eu³⁺ for optoelectronic applications

• Marcin Łapiński,
• Jakub Czubek,
• Katarzyna Drozdowska,
• Anna Synak,
• Wojciech Sadowski and
• Barbara Kościelska

Beilstein J. Nanotechnol. 2021, 12, 1271–1278, doi:10.3762/bjnano.12.94

• usually takes place in materials in which Eu3+ ions are located at sites with higher symmetry, and explaining this behavior in the presented samples would require further research. Anyway, we believe that the presented structures could be attractive for optoelectronic applications. Schematic view of the

Revealing the formation mechanism and band gap tuning of Sb₂S₃ nanoparticles

• Maximilian Joschko,
• Franck Yvan Fotue Wafo,
• Christina Malsi,
• Danilo Kisić,
• Ivana Validžić and
• Christina Graf

Beilstein J. Nanotechnol. 2021, 12, 1021–1033, doi:10.3762/bjnano.12.76

• a promising absorption material for photovoltaic applications [2][3][4]. Furthermore, the material is also suitable for various electronic and optoelectronic applications, such as energy storage [5] or optical data storage [6]. Sb2S3 appears in two forms: an orange, amorphous form and a grayish

A Au/CuNiCoS₄/p-Si photodiode: electrical and morphological characterization

• Adem Koçyiğit,
• Adem Sarılmaz,
• Teoman Öztürk,
• Faruk Ozel and
• Murat Yıldırım

Beilstein J. Nanotechnol. 2021, 12, 984–994, doi:10.3762/bjnano.12.74

• voltage-and frequency-dependent. The fabricated device with CuNiCoS4 thiospinel nanocrystals can be employed in high-efficiency optoelectronic applications. Keywords: Au/CuNiCoS4/p-Si device; CuNiCoS4; optoelectronic applications; Schottky devices; Introduction Recently, spinel materials have attracted

• the device. Furthermore, the CuNiCoS4 layer can also increase the current at zero bias voltage due its high absorption of the solar light. The CuNiCoS4 layer has a suitable bandgap value for the solar spectrum and can be used for optoelectronic applications, such as photodiode or photodetector, due to

• 104 Ω in the dark. The obtained Rs and Rsh values are listed below in Table 1. Both Rs and Rsh decreased with increasing illumination power density. The obtained results highlight that the photodiode can be used for optoelectronic applications [30]. The slightly increasing Rs value in the dark can be

High-yield synthesis of silver nanowires for transparent conducting PET films

• Gul Naz,
• Hafsa Asghar,
• Muhammad Ramzan,
• Muhammad Arshad,
• Rashid Ahmed,
• Muhammad Bilal Tahir,
• Bakhtiar Ul Haq,
• Nadeem Baig and
• Junaid Jalil

Beilstein J. Nanotechnol. 2021, 12, 624–632, doi:10.3762/bjnano.12.51

• as a by-product of the reaction drastically affect the electrical conductivity and transparency of the silver nanowires network, thus limiting the optoelectronic applications [30][31]. Here, a fast one-pot modified polyol protocol [32] was employed to obtain ultrapure silver nanowires. In this facile

A novel dry-blending method to reduce the coefficient of thermal expansion of polymer templates for OTFT electrodes

• Xiangdong Ye,
• Bo Tian,
• Yuxuan Guo,
• Fan Fan and
• Anjiang Cai

Beilstein J. Nanotechnol. 2020, 11, 671–677, doi:10.3762/bjnano.11.53

• -generation large-area, light-weight, flexible, and stretchable optoelectronic applications [1][2], including flexible displays [3], electronic papers [4], sensors [5], and medical applications [6]. Fabricating high-performance OTFTs usually requires that the electrodes on the polymer template are precisely

• of flexible displays, electronic papers, sensors, and medical applications, and provide new solutions for constructing large-area, light-weight, flexible, and stretchable optoelectronic applications. The experimental procedure for preparation of the PDMS/SiO2 composite template via dry blending: (a

Interfacial charge transfer processes in 2D and 3D semiconducting hybrid perovskites: azobenzene as photoswitchable ligand

• Nicole Fillafer,
• Tobias Seewald,
• Lukas Schmidt-Mende and
• Sebastian Polarz

Beilstein J. Nanotechnol. 2020, 11, 466–479, doi:10.3762/bjnano.11.38

• the 3D phases make these 2D phases a promising material for optoelectronic applications [7][8][9][10][11]. Larger organic cations “cleave” the crystal structure of the perovskite and are integrated into the material, yielding a high degree of chemical diversity to this class of organic–inorganic

Site-specific growth of oriented ZnO nanocrystal arrays

• Rekha Bai,
• Dinesh K. Pandya,
• Sujeet Chaudhary,
• Veer Dhaka,
• Vladislav Khayrudinov,
• Jori Lemettinen,
• Christoffer Kauppinen and
• Harri Lipsanen

Beilstein J. Nanotechnol. 2019, 10, 274–280, doi:10.3762/bjnano.10.26

• nanoscale optoelectronics [1][2][3][4]. ZnO is an important direct band gap (≈3.3 eV), nontoxic, metal oxide semiconductor, which can readily be used for optoelectronic applications. The properties of ZnO can be tailored by changing the morphology of the structures. Thus, fabrication of ZnO having different

Lead-free hybrid perovskites for photovoltaics

• Oleksandr Stroyuk

Beilstein J. Nanotechnol. 2018, 9, 2209–2235, doi:10.3762/bjnano.9.207

• other areas, in particular as light emitters for LEDs, laser applications and in photodetectors [28][29][30][31][35][43][47][50][52][53][54]. The versatility of the possible optoelectronic applications of Pb-HPs has stimulated an explosive progress in preparative chemistry and photophysics of HP

Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot

• Tarek A. Ameen,
• Hesameddin Ilatikhameneh,
• Archana Tankasala,
• Yuling Hsueh,
• James Charles,
• Jim Fonseca,
• Michael Povolotskyi,
• Jun Oh Kim,
• Sanjay Krishna,
• Monica S. Allen,
• Jeffery W. Allen,
• Rajib Rahman and
• Gerhard Klimeck

Beilstein J. Nanotechnol. 2018, 9, 1075–1084, doi:10.3762/bjnano.9.99

• intermediate-band solar cells (IBSCs) [3][4]. The optical properties of quantum dots (QDs) can be tuned through shape, dimensions and composition of the dots making them attractive for optoelectronic applications. Moreover, their sensitivity to normally incident light make them advantageous over other

Substrate and Mg doping effects in GaAs nanowires

• Perumal Kannappan,
• Nabiha Ben Sedrine,
• Jennifer P. Teixeira,
• Maria R. Soares,
• Bruno P. Falcão,
• Maria R. Correia,
• Nestor Cifuentes,
• Emilson R. Viana,
• Marcus V. B. Moreira,
• Geraldo M. Ribeiro,
• Alfredo G. de Oliveira,
• Juan C. González and
• Joaquim P. Leitão

Beilstein J. Nanotechnol. 2017, 8, 2126–2138, doi:10.3762/bjnano.8.212

• cm2/Vs) obtained from similar measurements as ours [66]. The above increase of the mobility is quite relevant for optoelectronic applications. Another finding of this work is the increase of the mobility with the increase of the free hole concentration, in contrast to what is expected in a bulk

Ultrasmall magnetic field-effect and sign reversal in transistors based on donor/acceptor systems

• Thomas Reichert and
• Tobat P. I. Saragi

Beilstein J. Nanotechnol. 2017, 8, 1104–1114, doi:10.3762/bjnano.8.112

• flexible electronic devices and optoelectronic applications such as displays and lighting, which are already commercially available. To push organic electronics to the next level, the scientific community is shifting its activities towards the study of spin transport and spin phenomena in organic materials

In-situ monitoring by Raman spectroscopy of the thermal doping of graphene and MoS₂ in O₂-controlled atmosphere

• Aurora Piazza,
• Filippo Giannazzo,
• Gianpiero Buscarino,
• Gabriele Fisichella,
• Antonino La Magna,
• Fabrizio Roccaforte,
• Marco Cannas,
• Franco Mario Gelardi and
• Simonpietro Agnello

Beilstein J. Nanotechnol. 2017, 8, 418–424, doi:10.3762/bjnano.8.44

• and the energy of the Fermi level evidenced that doping of graphene is an important aspect for electronic devices. The possibility to obtain stable p- or n-type doping in order to modulate the Gr sheet resistance for specific electronic and optoelectronic applications is mandatory for technical

Ordering of Zn-centered porphyrin and phthalocyanine on TiO₂(011): STM studies

• Piotr Olszowski,
• Lukasz Zajac,
• Szymon Godlewski,
• Bartosz Such,
• Rémy Pawlak,
• Antoine Hinaut,
• Res Jöhr,
• Thilo Glatzel,
• Ernst Meyer and
• Marek Szymonski

Beilstein J. Nanotechnol. 2017, 8, 99–107, doi:10.3762/bjnano.8.11

• conditions. Keywords: dye-sensitized solar cells; molecular nanostructures; phthalocyanines; porphyrins; rutile surfaces; STM imaging; Introduction There is an increasing interest in optoelectronic applications of organic molecular heterostructures which utilize inorganic substrates, such as titanium

Organized films

• Maurizio Canepa and
• Helmuth Möhwald

Beilstein J. Nanotechnol. 2016, 7, 406–408, doi:10.3762/bjnano.7.35

• a molecule in a controlled way for electronic and optoelectronic applications. In this respect, defined protein incorporation, for example, for designing a biosensor, seemed hopeless. Incidentally, these problems were largely shared by self-assembled monolayers (SAMs), as exemplified by the most

Transformations of PTCDA structures on rutile TiO₂ induced by thermal annealing and intermolecular forces

• Szymon Godlewski,
• Jakub S. Prauzner-Bechcicki,
• Thilo Glatzel,
• Ernst Meyer and
• Marek Szymoński

Beilstein J. Nanotechnol. 2015, 6, 1498–1507, doi:10.3762/bjnano.6.155

• point of view of optoelectronic applications [17]. In the following, we extend previous research on the PTCDA/TiO2(110)-(1 × 1) system [36]. Godlewski et al. [36] essentially paid attention to the influence of dispersion forces (changed by the density of molecules on the surface) on the formation of the

Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

• Jacques Perrin Toinin,
• Alain Portavoce,
• Khalid Hoummada,
• Michaël Texier,
• Maxime Bertoglio,
• Sandrine Bernardini,
• Marco Abbarchi and
• Lee Chow

Beilstein J. Nanotechnol. 2015, 6, 336–342, doi:10.3762/bjnano.6.32

• interesting properties for optoelectronic applications. For example, porous Si was shown to exhibit an increased band gap compared to bulk Si due to quantum (Q) size effects, related either to the formation of pseudo Q-wires or Q-dots in the porous structure, depending on the production method [1]. Generally

Silicon and germanium nanocrystals: properties and characterization

• Ivana Capan,
• Alexandra Carvalho and
• José Coutinho

Beilstein J. Nanotechnol. 2014, 5, 1787–1794, doi:10.3762/bjnano.5.189

• application in areas such as optoelectronic applications and memory devices has been progressively unraveled. Nevertheless, new challenges with no parallel in the respective bulk material counterparts have arisen. In this review, we consider what has been achieved and what are the current limitations with

• deal of attention, due to the promising optoelectronic applications [27]. It has been shown that in order to study the donor doping and dependences of the PL intensity in such systems, it is crucial to understand and control the presence of defects. The effects of donors and defects to the PL of Si NCs

Growth evolution and phase transition from chalcocite to digenite in nanocrystalline copper sulfide: Morphological, optical and electrical properties

• Priscilla Vasthi Quintana-Ramirez,
• Ma. Concepción Arenas-Arrocena,
• José Santos-Cruz,
• Marina Vega-González,
• Omar Martínez-Alvarez,
• Víctor Manuel Castaño-Meneses,
• Laura Susana Acosta-Torres and
• Javier de la Fuente-Hernández

Beilstein J. Nanotechnol. 2014, 5, 1542–1552, doi:10.3762/bjnano.5.166

• structure. All CuxS products could be promising for optoelectronic applications. Keywords: abundant materials in the crust of Earth; electrical resistance; nanocrystals; nanodisks; non-toxic semiconductors; optical band gap; phase transition; photocurrent; Introduction Metallic chalcogenides based on

• nanostructures, and phase transition were completely described in a scheme based on the TEM images. The full phase transition from chalcocite to digenite is obtained at 260 °C in an organic media. It is clear that the optical and electrical properties are suitable for optoelectronic applications, such as solar