Ion-induced surface reactions and deposition from Pt(CO)₂Cl₂ and Pt(CO)₂Br₂

• Mohammed K. Abdel-Rahman,
• Patrick M. Eckhert,
• Atul Chaudhary,
• Johnathon M. Johnson,
• Jo-Chi Yu,
• Lisa McElwee-White and
• D. Howard Fairbrother

Beilstein J. Nanotechnol. 2024, 15, 1427–1439, doi:10.3762/bjnano.15.115

• techniques, they do not require the use of organic solvents present in traditional lithography. Indeed, FEBID/FIBID can be considered as alternatives to commonly used methods such as chemical vapor deposition (CVD) and atomic layer deposition (ALD), particularly for area-selective, as opposed to conformal

Photocatalytic methane oxidation over a TiO₂/SiNWs p–n junction catalyst at room temperature

• Qui Thanh Hoai Ta,
• Luan Minh Nguyen,
• Ngoc Hoi Nguyen,
• Phan Khanh Thinh Nguyen and
• Dai Hai Nguyen

Beilstein J. Nanotechnol. 2024, 15, 1132–1141, doi:10.3762/bjnano.15.92

• recombination of charge carriers in semiconductors is a main drawback for photocatalytic oxidative coupling of methane (OCM) reactions. Herein, we propose a novel catalyst by developing a p–n junction titania–silicon nanowires (TiO2/SiNWs) heterostructure. The structure is fabricated by atomic layer deposition

• tools is extremely essential and important [37][38][39]. Herein, we constructed a robust p–n junction catalyst by atomic layer deposition (ALD) of TiO2 thin films on a p-type SiNW substrate for enhancing the photocatalytic efficiency in CH4 oxidation. Pristine p-Si wafers have limited surface area and

Direct electron beam writing of silver using a β-diketonate precursor: first insights

• Katja Höflich,
• Krzysztof Maćkosz,
• Chinmai S. Jureddy,
• Aleksei Tsarapkin and
• Ivo Utke

Beilstein J. Nanotechnol. 2024, 15, 1117–1124, doi:10.3762/bjnano.15.90

• . “Experimental” section) for focused electron beam-induced deposition (FEBID). (hfac)AgPMe3 is a white to light yellow solid, which was used before for chemical vapor deposition [32] and for growing silver nanoparticles by atomic layer deposition [33]. Like for other silver precursors, a pronounced halo and a

Effect of wavelength and liquid on formation of Ag, Au, Ag/Au nanoparticles via picosecond laser ablation and SERS-based detection of DMMP

• Sree Satya Bharati Moram,
• Chandu Byram and
• Venugopal Rao Soma

Beilstein J. Nanotechnol. 2024, 15, 1054–1069, doi:10.3762/bjnano.15.86

• used across various scientific and technological fields due to their distinctive optical, physical, and chemical properties. Over the past few decades, different methods have been developed for NP synthesis, including chemical reduction, electrochemistry, atomic layer deposition, laser ablation

Bolometric IR photoresponse based on a 3D micro-nano integrated CNT architecture

• Yasameen Al-Mafrachi,
• Sandeep Yadav,
• Sascha Preu,
• Jörg J. Schneider and
• Oktay Yilmazoglu

Beilstein J. Nanotechnol. 2024, 15, 1030–1040, doi:10.3762/bjnano.15.84

• was deposited by atomic layer deposition to support the elongated growth of CNTs (Figure 1a). The contact pad regions were opened by an optical lithography process prior to the evaporation of Cr/Au (20 nm, e-beam/100 nm, thermal) (Figure 1b). The overall M-shape for the CNT growth as shown in Figure

Water-assisted purification during electron beam-induced deposition of platinum and gold

• Cristiano Glessi,
• Fabian A. Polman and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2024, 15, 884–896, doi:10.3762/bjnano.15.73

• especially PtOx species, on SiOx substrates, as demonstrated during atomic layer deposition (ALD) experiments, although at elevated temperatures [58][59]. It has been postulated that the growth of Pt nanoparticles through ALD (using MeCpPtMe3 as the precursor molecule) is determined rather by the adsorption

Effect of repeating hydrothermal growth processes and rapid thermal annealing on CuO thin film properties

• Monika Ozga,
• Eunika Zielony,
• Aleksandra Wierzbicka,
• Anna Wolska,
• Marcin Klepka,
• Marek Godlewski,
• Bogdan J. Kowalski and
• Bartłomiej S. Witkowski

Beilstein J. Nanotechnol. 2024, 15, 743–754, doi:10.3762/bjnano.15.62

• literature. These encompass methods such as molecular beam epitaxy [17][18][19], direct current magnetron sputtering [4][20][21], and pulsed laser deposition [22][23][24]. Alternative approaches involve techniques such as chemical vapor deposition [25][26][27] and atomic layer deposition [28][29][30]. CuO

Aero-ZnS prepared by physical vapor transport on three-dimensional networks of sacrificial ZnO microtetrapods

• Veaceslav Ursaki,
• Tudor Braniste,
• Victor Zalamai,
• Emil Rusu,
• Vladimir Ciobanu,
• Vadim Morari,
• Daniel Podgornii,
• Pier Carlo Ricci,
• Rainer Adelung and
• Ion Tiginyanu

Beilstein J. Nanotechnol. 2024, 15, 490–499, doi:10.3762/bjnano.15.44

• oxide nanotube networks, by atomic layer deposition [20]. Another aeromaterial, so called aerographite, has been produced by a one-step chemical vapor deposition process with a simultaneous and complete removal of the template material consisting of highly porous 3D networks built from interconnected

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS₂ thin films with domains much smaller than the laser spot size

• Felipe Wasem Klein,
• Jean-Roch Huntzinger,
• Vincent Astié,
• Damien Voiry,
• Romain Parret,
• Houssine Makhlouf,
• Sandrine Juillaguet,
• Jean-Manuel Decams,
• Sylvie Contreras,
• Périne Landois,
• Ahmed-Azmi Zahab,
• Jean-Louis Sauvajol and
• Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

• fall off the reference curve. Indeed, data obtained on poorly crystalline MoS2 films synthesized by DLI atomic layer deposition (not shown) are found systematically and significantly below the corresponding reference curve. Concerning the DLI-PP-CVD samples presented in Figure 7, the A(A1g)/A(Si111) vs

In situ optical sub-wavelength thickness control of porous anodic aluminum oxide

• Aleksandrs Dutovs,
• Raimonds Popļausks,
• Oskars Putāns,
• Vladislavs Perkanuks,
• Aušrinė Jurkevičiūtė,
• Tomas Tamulevičius,
• Uldis Malinovskis,
• Iryna Olyshevets,
• Donats Erts and
• Juris Prikulis

Beilstein J. Nanotechnol. 2024, 15, 126–133, doi:10.3762/bjnano.15.12

• of templates, including evaporation masks [8][9][10], molds for nanowire array production using the supercritical fluid method [11], electrochemical deposition [12], atomic layer deposition [13], or traps for colloidal nanoparticle assembly [14]. Several applications, for example, color filtering [15

Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone

• Kristjan Kalam,
• Peeter Ritslaid,
• Tanel Käämbre,
• Aile Tamm and
• Kaupo Kukli

Beilstein J. Nanotechnol. 2023, 14, 1085–1092, doi:10.3762/bjnano.14.89

• Kristjan Kalam Peeter Ritslaid Tanel Kaambre Aile Tamm Kaupo Kukli Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia 10.3762/bjnano.14.89 Abstract Polycrystalline SnO2 thin films were grown by atomic layer deposition (ALD) on SiO2/Si(100) substrates from SnI4 and O3

• implied the formation of single-phase oxide in the films grown at temperatures above 300 °C. Appropriateness of the mentioned precursor system to the preparation of SnO2 films was established. Keywords: atomic layer deposition; tin oxide; tin tetraiodide; Introduction Atomic layer-deposited SnO2 films

• precursor combinations for obtaining SnO2 in atomic layer deposition (ALD) processes [9]. Two of these processes have employed SnI4 as the metal precursor with either O2 [10][11][12][13][14] or H2O2 [10][11][15] as oxidizer. Of these two oxygen sources, O2 would be more desirable because with it a hydrogen

Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

• Mathias Franz,
• Mahnaz Safian Jouzdani,
• Lysann Kaßner,
• Marcus Daniel,
• Frank Stahr and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2023, 14, 951–963, doi:10.3762/bjnano.14.78

• , Clemens-Winkler-Str. 6c, 09116 Chemnitz, Germany FAP Forschungs- und Applikationslabor Plasmatechnik GmbH, Gostritzer Str. 67B, 01217 Dresden, Germany 10.3762/bjnano.14.78 Abstract In this work, we present the development of an atomic layer deposition (ALD) process for metallic cobalt. The process

• saturation behaviour of the process was investigated. X-ray photoelectron spectroscopy measurements could show that the deposited cobalt is in the metallic state. The finally established process in ALD mode shows a homogeneous coating at the wafer level. Keywords: atomic layer deposition (ALD); cobalt; low

• -temperature ALD; PEALD; plasma-enhanced ALD; XPS; Introduction The atomic layer deposition (ALD) of cobalt films is an ongoing topic of interest [1]. Cobalt thin and ultrathin films play an important role in current generations of integrated circuits [2]. Compared to copper, the metal offers a greater

Role of titanium and organic precursors in molecular layer deposition of “titanicone” hybrid materials

• Arbresha Muriqi and
• Michael Nolan

Beilstein J. Nanotechnol. 2022, 13, 1240–1255, doi:10.3762/bjnano.13.103

• (MLD) allows the deposition of these hybrid films using sequential, self-limiting reactions, similar to atomic layer deposition (ALD). In this paper, we use first principles density functional theory (DFT) to investigate the growth mechanism of titanium-containing hybrid organic–inorganic MLD films

• organic–inorganic hybrid films for applications in several technological application areas, including packaging/encapsulation, electronics, batteries and biomedical applications [1][2][3][4]. MLD is very similar to the widely used atomic layer deposition (ALD) technique, which involves the fabrication of

Design of surface nanostructures for chirality sensing based on quartz crystal microbalance

• Yinglin Ma,
• Xiangyun Xiao and
• Qingmin Ji

Beilstein J. Nanotechnol. 2022, 13, 1201–1219, doi:10.3762/bjnano.13.100

• (CH3)2}4] on SAMs of chiral molecules by using the atomic layer deposition (ALD) technique [120]. The specific selection effect was verified by QCM measurements using valine (Val) as the target analyte. The TiO2-SAMs films were shown to preferentially adsorb ᴅ-Val, suggesting a reliable chiral selector

Theoretical investigations of oxygen vacancy effects in nickel-doped zirconia from ab initio XANES spectroscopy at the oxygen K-edge

• Dick Hartmann Douma,
• Lodvert Tchibota Poaty,
• Alessio Lamperti,
• Stéphane Kenmoe,
• Abdulrafiu Tunde Raji,
• Alberto Debernardi and
• Bernard M’Passi-Mabiala

Beilstein J. Nanotechnol. 2022, 13, 975–985, doi:10.3762/bjnano.13.85

• that of the monoclinic structure) [35]. Thus, our structural phase of reference in this work is cubic distorted fluorite zirconia since we are doping it and also due to the fact that actual experiments involving atomic layer deposition of TM-doped zirconia thin films revealed the cubic phase [26]. In

Zinc oxide nanostructures for fluorescence and Raman signal enhancement: a review

• Ioana Marica,
• Fran Nekvapil,
• Maria Ștefan,
• Cosmin Farcău and
• Alexandra Falamaș

Beilstein J. Nanotechnol. 2022, 13, 472–490, doi:10.3762/bjnano.13.40

• needed to develop efficient SERS substrates. The combination of several methods including nanosphere lithography, atomic layer deposition, electrodeposition, and electron-beam evaporation resulted in Au-covered hollow urchin-like ZnO structures (Figure 2e–k) [16]. The ZnO layer was deposited on a

• substrate covered with polystyrene spheres by atomic layer deposition, followed by electrodeposition, which was used to grow ZnO nanowires onto the surface. The Au layer was deposited after burning off the polystyrene spheres by electron beam evaporation while monitoring its thickness. Considering the

• their surface. In contrast, ZnO NRs with horizontal (100) and (101) orientations were observed to promote the growth of Au NPs and their homogenous distribution, resulting in the formation of “hot spots” necessary for enhancing the Raman signal [38]. Also, ZnO nanoarrays obtained using atomic layer

Engineered titania nanomaterials in advanced clinical applications

• Padmavati Sahare,
• Paulina Govea Alvarez,
• Juan Manual Sanchez Yanez,
• Gabriel Luna-Bárcenas,
• Samik Chakraborty,
• Sujay Paul and
• Miriam Estevez

Beilstein J. Nanotechnol. 2022, 13, 201–218, doi:10.3762/bjnano.13.15

• standard glass surface [82]. Another recent study stated that hollow, calcined TiO2 nanospheres (CSTiO2), synthesized by the combination of electrospinning and atomic layer deposition, have high antimicrobial activity against multidrug-resistant bacteria such as S. aureus strains compared to commercial

Plasmon-enhanced photoluminescence from TiO₂ and TeO₂ thin films doped by Eu³⁺ for optoelectronic applications

• Marcin Łapiński,
• Jakub Czubek,
• Katarzyna Drozdowska,
• Anna Synak,
• Wojciech Sadowski and
• Barbara Kościelska

Beilstein J. Nanotechnol. 2021, 12, 1271–1278, doi:10.3762/bjnano.12.94

• thicknesses in a range of 2 to 8 nm was deposited by atomic layer deposition (ALD) using a Beneq TFS 200 ALD system. This method provides precise control over the thickness with atomic accuracy. Trimethylaluminum (Sigma-Aldrich) and purified water were used as precursors. The deposition of the atomic layers

9.1% efficient zinc oxide/silicon solar cells on a 50 μm thick Si absorber

• Rafal Pietruszka,
• Bartlomiej S. Witkowski,
• Monika Ozga,
• Katarzyna Gwozdz,
• Ewa Placzek-Popko and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 766–774, doi:10.3762/bjnano.12.60

• % for planar structures, respectively. The work, therefore, describes an environmentally friendly technology for PV architecture with surface textures increasing the efficiency of PV cells. Keywords: atomic layer deposition; hydrothermal method; photovoltaics; silicon; solar cell; zinc oxide

• environmentally friendly solar cells are cells based on zinc oxide (ZnO). ZnO thin films can be obtained using many technologies, including molecular beam epitaxy, RF magnetron sputtering, pulsed laser deposition, chemical vapor deposition, and atomic layer deposition (ALD) [3]. ALD attracts the attention of many

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

Impact of GaAs(100) surface preparation on EQE of AZO/Al₂O₃/p-GaAs photovoltaic structures

• Piotr Caban,
• Rafał Pietruszka,
• Jarosław Kaszewski,
• Monika Ożga,
• Bartłomiej S. Witkowski,
• Krzysztof Kopalko,
• Piotr Kuźmiuk,
• Katarzyna Gwóźdź,
• Ewa Płaczek-Popko,
• Krystyna Lawniczak-Jablonska and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 578–592, doi:10.3762/bjnano.12.48

• solution with no final passivation. Subsequent I–V measurements, however, confirmed that from these samples, only the sulfur-passivated ones provided the highest current density. The tested devices were fabricated by using the ALD method. Keywords: atomic layer deposition; external quantum efficiency

• ; gallium arsenide; photovoltaics; surface passivation; Introduction The atomic layer deposition (ALD) method is used for silicon passivation in photovoltaics. In recent years we proposed the usage of ALD for the construction of simplified Si-based cells [1]. Once zinc oxide (ZnO) nanorods were employed as

A review on the green and sustainable synthesis of silver nanoparticles and one-dimensional silver nanostructures

• Sina Kaabipour and
• Shohreh Hemmati

Beilstein J. Nanotechnol. 2021, 12, 102–136, doi:10.3762/bjnano.12.9

• deposition process. Chemical vapor deposition (CVD) and atomic layer deposition (ALD) are among other chemical methods for nanoparticle synthesis. CVD is a method that allows production of nanoparticles on a substrate [241]. The process consists of three steps. First, the addition of a volatile precursor in

Atomic layer deposited films of Al₂O₃ on fluorine-doped tin oxide electrodes: stability and barrier properties

• Hana Krýsová,
• Michael Neumann-Spallart,
• Hana Tarábková,
• Pavel Janda,
• Ladislav Kavan and
• Josef Krýsa

Beilstein J. Nanotechnol. 2021, 12, 24–34, doi:10.3762/bjnano.12.2

• , Technická 5, 166 28 Prague 6, Czech Republic 10.3762/bjnano.12.2 Abstract Al2O3 layers were deposited onto electrodes by atomic layer deposition. Solubility and electron-transport blocking were tested. Films deposited onto fluorine-doped tin oxide (FTO, F:SnO2/glass) substrates blocked electron transfer to

• found up to 24 h and even after 168 h of exposure the changes in the blocking behaviour were still minimal. This behaviour was also observed for protection against direct reduction of FTO. Keywords: Al2O3; atomic layer deposition (ALD); barrier properties; corrosion; electrochemistry; FTO

• the topic of the present work, in which atomic layer deposition (ALD) is used as the coating technique [1]. This method is a gas-phase process which relies on a molecular approach. Therefore, a conformal coating, which reaches the pores and crevasses of the sample, can be obtained. Protective coating

Antimicrobial metal-based nanoparticles: a review on their synthesis, types and antimicrobial action

• Matías Guerrero Correa,
• Fernanda B. Martínez,
• Cristian Patiño Vidal,
• Camilo Streitt,
• Juan Escrig and
• Carol Lopez de Dicastillo

Beilstein J. Nanotechnol. 2020, 11, 1450–1469, doi:10.3762/bjnano.11.129

• conditions, the size, length, and diameter of the nanostructures can be adjusted in order to control the physical properties of the NPs. Chemical methods A few examples of chemical methods that have been used to synthesize nanoparticles are the atomic layer deposition method, chemical reduction method

• particle sizes, are listed in Table 2. The atomic layer deposition method is employed to grow metal oxide and metallic three-dimensional nanostructures using porous alumina membranes [41], electrostatically spun nanofibers [39][40] or electrosprayed spherical particles [38] as templates. As Figure 1 shows

• atomic layer deposition techniques [38][39]. The results indicated that TiO2 nanospheres exhibited the best antimicrobial activity against methicillin-resistant Staphylococcus aureus 97-7 and 622-4 when the NPs were irradiated with UVA radiation for 60 minutes, which increased their antimicrobial

Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir

• Mathias Franz,
• Romy Junghans,
• Paul Schmitt,
• Adriana Szeghalmi and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2020, 11, 1439–1449, doi:10.3762/bjnano.11.128

• features cannot be achieved with dense silicon, i.e., a nanoporous silicon anode is required for a successful integration [8]. Also, integrated capacitors can benefit from the increased surface of nanowires with high aspect ratio. In combination with atomic layer deposition, one can fabricate integrated

• wafer-level preparation, the iridium film was deposited by atomic layer deposition on rectangular Si(100) samples, using Ir(acac)3 and oxygen. Details are described by Genevée et al. [31]. The process was carried out with 45 and 90 cycles. One ALD cycle consists of pulsing Ir(acac)3 for 6 s, followed by

• layer deposition (ALD), one can assume that a wafer-level integration is feasible. Figure 2 shows the surface of a silicon die after 90 cycles of Ir ALD. In this deposition phase, small Ir particles are grown. The particles agglomerate and start to form a continuous film. However, there are still voids