Tailoring of physical properties of RF-sputtered ZnTe films: role of substrate temperature

• Kafi Devi,
• Usha Rani,
• Arun Kumar,
• Divya Gupta and
• Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 333–348, doi:10.3762/bjnano.16.25

• ellipsometry (SE). The experimental parameters ψ and Δ were recorded at an incident angle of 70° with respect to film surface using a SENTECH ellipsometer in the wavelength range of 200–1000 nm. The thickness of the films was found to be 940 ± 0.53 nm, 623 ± 0.16 nm, 563 ± 0.02 nm, 337 ± 0.02 nm, and 200

CdSe/ZnS quantum dots as a booster in the active layer of distributed ternary organic photovoltaics

• Gabriela Lewińska,
• Piotr Jeleń,
• Zofia Kucia,
• Maciej Sitarz,
• Łukasz Walczak,
• Bartłomiej Szafraniak,
• Jerzy Sanetra and
• Konstanty W. Marszalek

Beilstein J. Nanotechnol. 2024, 15, 144–156, doi:10.3762/bjnano.15.14

• spectra of a solid were studied as a thin film deposited on quartz, and measurements in solution were obtained in chloroform. The wavelength ranged from 250 to 1000 nm. A Woolam M-2000 ellipsometer was used for spectroscopic ellipsometry analysis. The measurement range was 350–1650 nm. The measurement was

• fluorophores emitting light signifies the occurrence of the quenching process. Spectroscopic ellipsometry Spectroscopic ellipsometry studies were performed to determine changes in optical performance with temperature. A multilayer model with a silicon substrate layer was fitted to the obtained Ψ and Δ values

In situ optical sub-wavelength thickness control of porous anodic aluminum oxide

• Aleksandrs Dutovs,
• Raimonds Popļausks,
• Oskars Putāns,
• Vladislavs Perkanuks,
• Aušrinė Jurkevičiūtė,
• Tomas Tamulevičius,
• Uldis Malinovskis,
• Iryna Olyshevets,
• Donats Erts and
• Juris Prikulis

Beilstein J. Nanotechnol. 2024, 15, 126–133, doi:10.3762/bjnano.15.12

• effective thickness below 300 nm could be produced with a few nanometers accuracy using single-crystal aluminum substrates. The results were confirmed using spectroscopic ellipsometry. The method for controlling the thickness during anodization eliminates the necessity of sample sectioning for electron

• microscopy and is particularly valuable for the small-scale production of PAAO-based functional optical coatings. Keywords: electrochemistry; ellipsometry; porous anodic alumina; spectroscopy; thin films; Introduction Porous anodic aluminum oxide (PAAO) is a versatile self-organized material with

• achieve precise optical characterization, one could employ spectroscopic ellipsometry (SE) with more refined division into sub-layers [26] and consider additional material properties, such as the anisotropy of PAAO [27] and the optical dispersion of the refractive index (RI) of Al2O3 [28]. However, for

Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone

• Kristjan Kalam,
• Peeter Ritslaid,
• Tanel Käämbre,
• Aile Tamm and
• Kaupo Kukli

Beilstein J. Nanotechnol. 2023, 14, 1085–1092, doi:10.3762/bjnano.14.89

• from a film deposited at 300 °C is presented in Figure 9. The refractive index values in the range of 2.04–2.06 can be regarded as appreciably high for SnO2 thin films. Refractive index values of approx. 2.0 were measured by ellipsometry for SnO2 films grown by ALD from bis(1-dimethylamino-2-methyl-2

Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

• Mathias Franz,
• Mahnaz Safian Jouzdani,
• Lysann Kaßner,
• Marcus Daniel,
• Frank Stahr and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2023, 14, 951–963, doi:10.3762/bjnano.14.78

• . Figure 7 shows the measured film thickness for a deposition process at 85 °C for subsets of 100 cycles. The corresponding ellipsometry raw data are shown in Supporting Information File 1, Figure S5. We assumed a linear approximation of type d = r·N + d0. This assumption comprises the film thickness d

• growth rate (blue diamonds) extracted by using a linear growth approximation. XPS measurements of the CVD film deposited at 150 °C. Growth per cycle of ALD processes with [Co2(CO)6HC≡CC5H11] precursor at various temperatures. Film thickness evolution measured by in line spectroscopic ellipsometry for a

• after 1500 cycles at 85 °C with 2 s H2 plasma pulse; measured by ellipsometry. Thickness distribution of cobalt film on a 200 mm wafer after 1500 cycles at 85 °C with 4 s H2 plasma pulse; measured by ellipsometry. XPS results of a cobalt film deposited at 35 °C by ALD with [Co2(CO)6HC≡CC5H11] precursor

Role of titanium and organic precursors in molecular layer deposition of “titanicone” hybrid materials

• Arbresha Muriqi and
• Michael Nolan

Beilstein J. Nanotechnol. 2022, 13, 1240–1255, doi:10.3762/bjnano.13.103

• substrate with 100 nm thermal oxide. In situ ellipsometry revealed for EG-based titanicones that the growth initiates but terminates after only 5 to 10 cycles, while for GL-based titanicones the growth proceeds and films have a GPC of 0.9 Å/cycle to 0.2 Å/cycle as the temperature increases. This is due to

Impact of device design on the electronic and optoelectronic properties of integrated Ru-terpyridine complexes

• Max Mennicken,
• Sophia Katharina Peter,
• Corinna Kaulen,
• Ulrich Simon and
• Silvia Karthäuser

Beilstein J. Nanotechnol. 2022, 13, 219–229, doi:10.3762/bjnano.13.16

• was verified by infrared reflection absorption spectroscopy (IRRAS) and surface-enhanced Raman spectroscopy in combination with density functional theory calculations, as well as variable angle spectroscopic ellipsometry. Based on this wire formation protocol the on-chip preparation of Ru(TP)2-complex

Atomic layer deposited films of Al₂O₃ on fluorine-doped tin oxide electrodes: stability and barrier properties

• Hana Krýsová,
• Michael Neumann-Spallart,
• Hana Tarábková,
• Pavel Janda,
• Ladislav Kavan and
• Josef Krýsa

Beilstein J. Nanotechnol. 2021, 12, 24–34, doi:10.3762/bjnano.12.2

• cycles. The layer thickness of the films was determined via referenced spectroscopic ellipsometry (RSE, Accurion). In the range of 10 to 200 deposition cycles, the measured deposition rate was 0.085 nm/cycle, corresponding to layer thickness values of 2.5, 5, 10, and 17 nm, respectively. For dissolution

• bare FTO substrates and of Al2O3 layers on FTO substrates after polarization at −1.2 V vs Ag/AgCl, in buffer (pH 7.2) at different time intervals.a Supporting Information Supporting Information File 28: Additional figures. Acknowledgements The authors would like to thank Tim Verhagen for ellipsometry

A set of empirical equations describing the observed colours of metal–anodic aluminium oxide–Al nanostructures

• Cristina V. Manzano,
• Jakob J. Schwiedrzik,
• Gerhard Bürki,
• Laszlo Pethö,
• Johann Michler and
• Laetitia Philippe

Beilstein J. Nanotechnol. 2020, 11, 798–806, doi:10.3762/bjnano.11.64

• design of colours by choosing a specific thickness [14]. Also, there is a model based on optical measurements (ellipsometry integrating indirectly thickness, porosity) in combination with total reflectance measurements to access the colours, in terms of L*a*b* values, of AAO–Al nanostructures filled with

The effect of heat treatment on the morphology and mobility of Au nanoparticles

• Sven Oras,
• Sergei Vlassov,
• Simon Vigonski,
• Boris Polyakov,
• Mikk Antsov,
• Vahur Zadin,
• Rünno Lõhmus and
• Karine Mougin

Beilstein J. Nanotechnol. 2020, 11, 61–67, doi:10.3762/bjnano.11.6

• from the ellipsometry measurements presented in Figure 7. How exactly the rapid growth of the SiO2 layer may be related to the drastic increase in friction remains unclear and can be the subject for future studies. Overall, we demonstrated that heat treatment, which is widely used as a surfactant

Growth dynamics and light scattering of gold nanoparticles in situ synthesized at high concentration in thin polymer films

• Corentin Guyot,
• Philippe Vandestrick,
• Ingrid Marenne,
• Olivier Deparis and
• Michel Voué

Beilstein J. Nanotechnol. 2019, 10, 1768–1777, doi:10.3762/bjnano.10.172

• studied by measuring the bi-directional reflection distribution function. In parallel with the observation of enhanced scattering, imaging ellipsometry in dynamics mode showed that local values of the ellipsometric angles Ψ and Δ were strongly modified by the annealing process. Conclusion: A diffraction

• regimes in the dynamics of the nanoparticle growth and in the optical response of the nanocomposite. Keywords: gold; imaging ellipsometry; metal nanoparticles; plasmonic nanocomposite; polymer films; Introduction Over the last 20 years, numerous studies were carried out to investigate the optical

• the in situ growth of NPs. For this purpose, we performed the annealing of Au3+-doped PVA films and we quantified the scattering of light that is induced by the AuNP growth. We monitored the evolution of the locally resolved optical properties of the film using imaging ellipsometry (IE) and determined

Growth of lithium hydride thin films from solutions: Towards solution atomic layer deposition of lithiated films

• Ivan Kundrata,
• Karol Fröhlich,
• Lubomír Vančo,
• Matej Mičušík and
• Julien Bachmann

Beilstein J. Nanotechnol. 2019, 10, 1443–1451, doi:10.3762/bjnano.10.142

• homogeneous air-sensitive thin films, characterized by using ellipsometry, grazing incidence X-ray diffraction (GIXRD), in situ quartz crystal microbalance, and scanning electron microscopy, was observed. Lithium hydride diffraction peaks have been observed in as-deposited films by GIXRD. X-ray photoelectron

• scan speed was changed as necessary. Ellipsometry measurements were performed using SENTECH SENpro ellipsometer, using the included halogen lamp. Frequency measurements on a quartz crystal were performed in situ using an OpenQCM module at 10 MHz. Results and Discussion Structure and possible reaction

• to be homogeneous and rough as seen in Figure 9. Cross-sectional SEM was performed to estimate the film thickness as a reference for spectroscopic ellipsometry (Figure 10). Based on the SEM image, a Cauchy model was created with a constant thickness of 45 nm while all other parameters were fitted

Experimental study of an evanescent-field biosensor based on 1D photonic bandgap structures

• Jad Sabek,
• Francisco Javier Díaz-Fernández,
• Luis Torrijos-Morán,
• Zeneida Díaz-Betancor,
• Ángel Maquieira,
• María-José Bañuls,
• Elena Pinilla-Cienfuegos and
• Jaime García-Rupérez

Beilstein J. Nanotechnol. 2019, 10, 967–974, doi:10.3762/bjnano.10.97

• thickness of the initial organosilane layer (ca. 4.5 nm, obtained from ellipsometry measurements) and by estimating the thickness of the half-antibodies deposited on the surface (ca. 2.5 nm), we determine that a total thickness of the whole biorecognition layer of only ca. 7 nm is achieved. When determining

On the transformation of “zincone”-like into porous ZnO thin films from sub-saturated plasma enhanced atomic layer deposition

• Alberto Perrotta,
• Julian Pilz,
• Stefan Pachmajer,
• Antonella Milella and
• Anna Maria Coclite

Beilstein J. Nanotechnol. 2019, 10, 746–759, doi:10.3762/bjnano.10.74

• doses below self-limiting values. Nanoporous ZnO thin films were subsequently obtained by calcination of the zincone-like layers between 100–600 °C. Spectroscopic ellipsometry (SE) and X-ray diffraction (XRD) were adopted in situ during calcination to investigate the removal of carbon impurities

• fractions. The calcination of the hybrid layers was investigated in situ with spectroscopic ellipsometry (SE) and X-ray diffraction (XRD). Oxygen plasma was used as co-reactant together with diethylzinc (DEZ) in a room-temperature plasma-enhanced ALD process and, as a function of the plasma time exposure

• ]. Spectroscopic ellipsometry (J.A. Woollam M-2000V) was used to deter0mine the thickness and optical properties of the films after deposition. The measurements were carried out at three different angles (65°, 70°, and 75°) in a wavelength range from 370 to 1000 nm. The analysis of the spectra was performed with

Biocompatible organic–inorganic hybrid materials based on nucleobases and titanium developed by molecular layer deposition

• Leva Momtazi,
• Henrik H. Sønsteby and
• Ola Nilsen

Beilstein J. Nanotechnol. 2019, 10, 399–411, doi:10.3762/bjnano.10.39

• dependence with deposition temperature while the adenine system was relatively constant between 250–300 °C, indicating a possible ALD window, before decreasing at higher temperatures. The evolution in refractive index, as measured by ellipsometry, and density, as measured by X-ray reflectivity (XRR), as a

• quantifying this by porosity ellipsometry (data not shown) revealed only limited or insignificant porosity (thymine ≈4%, uracil ≈1% and adenine ≈1%). The complex nature of these films therefore remains to be further investigated. Judging from the observations that most of the nucleobases leached out during

• the middle of the adenine pulse stems from edge effects of the statistics. Film growth as a function of deposition temperature for TTIP and thymine (black squares), adenine (red circles), and uracil (blue triangles). (a) Refractive index at 632.8 nm as measured by spectroscopic ellipsometry and (b

Geometrical optimisation of core–shell nanowire arrays for enhanced absorption in thin crystalline silicon heterojunction solar cells

• Robin Vismara,
• Olindo Isabella,
• Andrea Ingenito,
• Fai Tong Si and
• Miro Zeman

Beilstein J. Nanotechnol. 2019, 10, 322–331, doi:10.3762/bjnano.10.31

• the flat c-Si substrates were characterised via spectroscopic ellipsometry. Finally, using physical vapour deposition, metal electrodes consisting of Ag/Cr/Al were deposited at the front (as patterned grids) and at the rear surfaces of the wafer (full area), with thickness values of 300/30/300 nm and

Electrostatic force microscopy for the accurate characterization of interphases in nanocomposites

• Diana El Khoury,
• Richard Arinero,
• Jean-Charles Laurentie,
• Mikhaël Bechelany,
• Michel Ramonda and
• Jérôme Castellon

Beilstein J. Nanotechnol. 2018, 9, 2999–3012, doi:10.3762/bjnano.9.279

• also verified using the AFM topography results [63]. The thickness of the deposited shells was monitored by characterizing reference samples for each film. However, these samples were prepared over bare substrates. Ellipsometry, electron microscopy and profilometry were used to verify the agreement

Site-controlled formation of single Si nanocrystals in a buried SiO₂ matrix using ion beam mixing

• Xiaomo Xu,
• Thomas Prüfer,
• Daniel Wolf,
• Hans-Jürgen Engelmann,
• Lothar Bischoff,
• René Hübner,
• Karl-Heinz Heinig,
• Wolfhard Möller,
• Stefan Facsko,
• Johannes von Borany and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2018, 9, 2883–2892, doi:10.3762/bjnano.9.267

• are based on p-doped Si wafers with a specific resistivity of 10 Ω cm. The buried SiO2 layer was grown via thermal oxidation at 1123 K in dry O2 atmosphere in a furnace followed by RF-sputtering of an amorphous Si layer. The thickness of the oxide layer was measured by spectroscopic ellipsometry in

Polarization-dependent strong coupling between silver nanorods and photochromic molecules

• Gwénaëlle Lamri,
• Alessandro Veltri,
• Jean Aubard,
• Pierre-Michel Adam,
• Nordin Felidj and
• Anne-Laure Baudrion

Beilstein J. Nanotechnol. 2018, 9, 2657–2664, doi:10.3762/bjnano.9.247

• . Indeed, the MC isomer presents an absorption maximum at 570 nm (Figure 1c). We characterized this film (without any metallic nanoparticles) by ellipsometry measurements and verified that the photochromic transition is accompanied by a high refractive index change. Figure 1d shows the variations of the

• ellipsometry. Extinction spectra of the silver nanorod arrays covered with photochromic molecules before (in SPY) and after (in MC) the photochromic transition. The 0° and 90° polarization orientations, corresponding to the excitation of the long and the short axis, are in black/grey and in dark/light blue

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO₂/Si₃N₄-coating

• Dirk König,
• Daniel Hiller,
• Noël Wilck,
• Birger Berghoff,
• Merlin Müller,
• Sangeeta Thakur,
• Giovanni Di Santo,
• Luca Petaccia,
• Joachim Mayer,
• Sean Smith and
• Joachim Knoch

Beilstein J. Nanotechnol. 2018, 9, 2255–2264, doi:10.3762/bjnano.9.210

• Central Facility for Electron Microscopy, RWTH Aachen University, and on the spherical aberration corrected FEI Titan 80-300 TEM operated at 300 kV at Ernst Ruska-Centre, Forschungszentrum Jülich [26]. In addition, the Si-NWell thickness was measured by ellipsometry. The thickness of the Si-NWells in

Localized photodeposition of catalysts using nanophotonic resonances in silicon photocathodes

• Evgenia Kontoleta,
• Sven H. C. Askes,
• Lai-Hung Lai and
• Erik C. Garnett

Beilstein J. Nanotechnol. 2018, 9, 2097–2105, doi:10.3762/bjnano.9.198

• -electrochemical performance [39][40][41]. The amorphous TiO2 layer was further annealed at 350 °C for 3 h to form crystalline anatase TiO2, which led to an improved performance. The final TiO2 layers were characterized with X-ray diffraction (XRD) (Figure S2, Supporting Information File 1) and ellipsometry

• simulations, while the n and k values measured with ellipsometry were used for the TiO2 coating. Every structure was simulated on a thick silicon substrate, also coated with 18 nm TiO2, and the surrounding refractive index was set to 1.33 to resemble the aqueous conditions of the reaction environment. The

• on a 3.5 × 3.5 × 2 μm silicon substrate. Absorbed power simulations were conducted with an 18 nm TiO2 layer, with refractive index values (n and k) retrieved from ellipsometry (Figure S3, Supporting Information File 1). An example of the simulation environment can be found in Figure S13 (Supporting

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si_1−xGe_x and Si layers

• Richard Daubriac,
• Emmanuel Scheid,
• Hiba Rizk,
• Richard Monflier,
• Sylvain Joblot,
• Rémi Beneyton,
• Pablo Acosta Alba,
• Sébastien Kerdilès and
• Filadelfo Cristiano

Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

• including time, temperature and Ge content. For this, spectroscopic ellipsometry (with a HORIBA Jobin Yvon system) was used as a fast, reliable and non-destructive method for the measurement of the removed thickness. We developed an empirical model for the quantification of the SiGe thickness measurement

• (based on a SiGe/Si two layers stack and a point-by-point calculation procedure), which was calibrated using other techniques (such as TEM and XRD). As an example, Figure 1 summarizes the removed thickness measured by XRD (in (004) configuration), high-resolution TEM and ellipsometry as a function of the

• etching time of a 20 nm thick Si0.73Ge0.27 boron-doped layer (1018 cm−3) grown on top of a Si substrate. TEM images show a clear decrease of the layer thickness, while all the techniques are in mutual agreement, therefore validating ellipsometry as a unique thickness characterization method for the

A novel copper precursor for electron beam induced deposition

• Caspar Haverkamp,
• George Sarau,
• Mikhail N. Polyakov,
• Ivo Utke,
• Marcos V. Puydinger dos Santos,
• Silke Christiansen and
• Katja Höflich

Beilstein J. Nanotechnol. 2018, 9, 1220–1227, doi:10.3762/bjnano.9.113

• ellipsometry very time consuming or even unrealistic. To find the permittivity values for the investigated copper precursor, µ-spectroscopy on the deposited pads was used [20]. Reflection and transmission were determined for FEBID pads with side lengths of 10 × 10 μm deposited on a glass substrate covered with

P3HT:PCBM blend films phase diagram on the base of variable-temperature spectroscopic ellipsometry

• Barbara Hajduk,
• Henryk Bednarski,
• Bożena Jarząbek,
• Henryk Janeczek and
• Paweł Nitschke

Beilstein J. Nanotechnol. 2018, 9, 1108–1115, doi:10.3762/bjnano.9.102

• composition of poly(3-hexylthiophene) (P3HT):[6,6]-phenyl-C61-butyric acid methyl ester (PCBM) blend films influences their phase transitions using variable-temperature spectroscopic ellipsometry. We demonstrate that this non-destructive method is a very sensitive optical technique to investigate the phase

• temperature changes. Characteristic temperatures determined from the slope changes of the Δ(T) plot appeared to be very good guess values for the phase transition temperatures. Keywords: non-linear optics; organic semiconductors; spectroscopic ellipsometry; theoretical modeling; thin films; Introduction The

• spectroscopic ellipsometry (SE). Moreover, with both techniques they detected two Tg transitions in thin films of P3HT:PCBM for a certain range of PCBM content. SE is a non-destructive and very sensitive technique for thin films investigations [23][24][25]. Generally, ellipsometry measures a change in the

Non-equilibrium electron transport induced by terahertz radiation in the topological and trivial phases of Hg_1−xCd_xTe

• Alexandra V. Galeeva,
• Alexey I. Artamkin,
• Alexey S. Kazakov,
• Sergey N. Danilov,
• Sergey A. Dvoretskiy,
• Nikolay N. Mikhailov,
• Ludmila I. Ryabova and
• Dmitry R. Khokhlov

Beilstein J. Nanotechnol. 2018, 9, 1035–1039, doi:10.3762/bjnano.9.96

• thickness was about 4 µm. Composition of the films was controlled by ellipsometry. The synthesis is described in detail in [14]. We have chosen samples with x = 0.13; 0.15; 0.17 for our study. The latter corresponds to the trivial phase with the normal band structure. The two others are characterized by the