Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors

• Jakub Jadwiszczak,
• Pierce Maguire,
• Conor P. Cullen,
• Georg S. Duesberg and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

• significant n-dopant densities and suppressing the unwanted crystal structure amorphization which results from high irradiation doses. At high IR values (red group), we observe the emergence of a weak ambipolar response in our transfer curves. At these ratios, the device starts to enter a regime where more

Hybridization vs decoupling: influence of an h-BN interlayer on the physical properties of a lander-type molecule on Ni(111)

• Maximilian Schaal,
• Takumi Aihara,
• Marco Gruenewald,
• Felix Otto,
• Jari Domke,
• Roman Forker,
• Hiroyuki Yoshida and
• Torsten Fritz

Beilstein J. Nanotechnol. 2020, 11, 1168–1177, doi:10.3762/bjnano.11.101

• -BN on Ni(111) exhibits an atomically flat morphology [18][19]. DBP is a promising molecule in the field of organic electronics, for example, as an electron donor [20][21][22][23] or acceptor [24] in organic photovoltaic applications, and as a dopant in organic light emitting diodes [25]. For our

Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface

• Stefania Castelletto,
• Faraz A. Inam,
• Shin-ichiro Sato and
• Alberto Boretti

Beilstein J. Nanotechnol. 2020, 11, 740–769, doi:10.3762/bjnano.11.61

• /compatibility of the active quantum source and the device in use, and they have limitations in terms of scalability. The type of point defects that should be addressed is also a key element and is generally substitutional dopants, native vacancies, and dopant-vacancy complexes. The space of possible defects is

Structural optical and electrical properties of a transparent conductive ITO/Al–Ag/ITO multilayer contact

• Aliyu Kabiru Isiyaku,
• Ahmad Hadi Ali and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2020, 11, 695–702, doi:10.3762/bjnano.11.57

• fraction of Sn is low because it is the dopant element in ITO. The low content of Al is attributed to the very thin layer. The EDXS spectra of the films before and after annealing are shown in Figure 2. The surface morphology of the IAAI and ITO films was studied using atomic force microscopy (AFM) of an

Electrochemically derived functionalized graphene for bulk production of hydrogen peroxide

• Munaiah Yeddala,
• Pallavi Thakur,
• Anugraha A and
• Tharangattu N. Narayanan

Beilstein J. Nanotechnol. 2020, 11, 432–442, doi:10.3762/bjnano.11.34

• nature of the dopant and its position in the host lattice, it has been well reported that one can engineer the electrochemical activity of nanographitic systems and the catalytic reaction pathways [31][38][39][40]. Very recently, oxidized graphitic structures were identified for their efficacy towards

Charge-transfer interactions between fullerenes and a mesoporous tetrathiafulvalene-based metal–organic framework

• Manuel Souto,
• Joaquín Calbo,
• Samuel Mañas-Valero,
• Aron Walsh and
• Guillermo Mínguez Espallargas

Beilstein J. Nanotechnol. 2019, 10, 1883–1893, doi:10.3762/bjnano.10.183

• since the fullerene is acting as a dopant introducing charge carriers within the framework. However, this enhancement in conductivity is lower in comparison to other reported systems [14][35] probably due to the low ratio between C60 and TTF (1:4) and the long distances between the TTF moieties (9.6 Å

Nanoarchitectonics meets cell surface engineering: shape recognition of human cells by halloysite-doped silica cell imprints

• Elvira Rozhina,
• Ilnur Ishmukhametov,
• Svetlana Batasheva,
• Farida Akhatova and
• Rawil Fakhrullin

Beilstein J. Nanotechnol. 2019, 10, 1818–1825, doi:10.3762/bjnano.10.176

• loaded with anionic molecules (including bioactive compounds), and the loading efficiency can be significantly increased by using vacuum pumping [29]. Halloysite has already shown its potential in cells surface engineering of microbial cells [30][31]. Here we used halloysite as a dopant for artificial

• silica shells deposited on viable human HeLa cells. Halloysite nanotubes were chosen as dopant because of their biocompatibilty and rather large lumen sizes suitable for loading various drugs and even enzymes [32]. In the future, the procedure developed here can be extended to other nanotubular particles

Materials nanoarchitectonics at two-dimensional liquid interfaces

• Katsuhiko Ariga,
• Michio Matsumoto,
• Taizo Mori and
• Lok Kumar Shrestha

Beilstein J. Nanotechnol. 2019, 10, 1559–1587, doi:10.3762/bjnano.10.153

• nanoarchitectonics (controlled single atom/ion transfer) to regulate the number of dopant atoms in one-dimensional solid electrolyte nanodots (α-Ag2+δS) [127]. The nanoarchitectonic construction of one-dimensional nanowires from II–VI semiconductors was demonstrated for the use as wavelength division multiplexer as

Green fabrication of lanthanide-doped hydroxide-based phosphors: Y(OH)₃:Eu³⁺ nanoparticles for white light generation

• Tugrul Guner,
• Anilcan Kus,
• Mehmet Ozcan,
• Aziz Genc,
• Hasan Sahin and
• Mustafa M. Demir

Beilstein J. Nanotechnol. 2019, 10, 1200–1210, doi:10.3762/bjnano.10.119

• combined with rare-earth dopants (Ce3+, Eu3+, Dy3+, etc.) [9][10][11][13]. Visible range emission from these phosphors, such as yellow, green or red, are in general the result of radiative energy transfer between partially filled 4f orbitals of dopant states together with the effective shielding of 5s and

• levels of the transition states through adjusting the dopant ion, different emission and PL intensities can be obtained [11][26][27][28]. These phosphors have been employed in various applications, including optoelectronics, field emissive displays and HDTVs, and advanced ceramics [29][30]. To date

• these requirements especially in the case of lanthanide-doped hydroxide-based phosphor fabrication, which is facile, water-based, and rapid. More specifically, acetate-based reagents of both the host and dopant are dissolved in LiOH/water solution together under room temperature. The presence of Li ions

Porous N- and S-doped carbon–carbon composite electrodes by soft-templating for redox flow batteries

• Maike Schnucklake,
• László Eifert,
• Jonathan Schneider,
• Roswitha Zeis and
• Christina Roth

Beilstein J. Nanotechnol. 2019, 10, 1131–1139, doi:10.3762/bjnano.10.113

• corresponding dopant. Material synthesis To produce a suitable reference material, the pristine carbon felt was carbonized at 800 and 1000 °C under inert atmosphere (N2, 100%). The maximum temperature was held for 1 h before letting the furnace cool down. To produce composite electrodes a soft-templating

Electronic and magnetic properties of doped black phosphorene with concentration dependence

• Ke Wang,
• Hai Wang,
• Min Zhang,
• Yan Liu and
• Wei Zhao

Beilstein J. Nanotechnol. 2019, 10, 993–1001, doi:10.3762/bjnano.10.100

• structures of Si- and S-doped phosphorene without spin polarization always show metallic states suggesting the bandgap is insensitive to the in-plane size of the supercell and the dopant content. However, the results are fairly different once the spin polarization is taken into account. The band structures

• for the Si-doped phosphorene with 2 × 2 × 1 supercell and a dopant content of 6.25%. The magnetic moment induced by 3p orbit–spin splitting increases with the in-plane size of the supercell, and the largest magnetic moment can be found in 4 × 4 × 1 and 5 × 5 × 1 supercells. These findings offer an

• was 2 × 2 × 1 and the impurity concentration was 6.25%. They observed that all doped phosphorenes were stable, with Ca-, Ge-, and Se-doped phosphorene exhibiting metallic states. Obviously, the magnetic and electronic properties of doped phosphorene can be tuned by changing the dopant element. The

Threshold voltage decrease in a thermotropic nematic liquid crystal doped with graphene oxide flakes

• Mateusz Mrukiewicz,
• Krystian Kowiorski,
• Paweł Perkowski,
• Rafał Mazur and
• Małgorzata Djas

Beilstein J. Nanotechnol. 2019, 10, 71–78, doi:10.3762/bjnano.10.7

•  2 we see that the threshold voltage behavior of the 5CB-GO suspensions is reflected in the concentration dependence of K11. The small amount (0.05 wt %) of the carbon dopant leads to deterioration of properties relevant for liquid crystal applications. This is due to the increase of Uth and K11 and

Zn/F-doped tin oxide nanoparticles synthesized by laser pyrolysis: structural and optical properties

• Florian Dumitrache,
• Iuliana P. Morjan,
• Elena Dutu,
• Ion Morjan,
• Claudiu Teodor Fleaca,
• Monica Scarisoreanu,
• Alina Ilie,
• Marius Dumitru,
• Cristian Mihailescu,
• Adriana Smarandache and
• Gabriel Prodan

Beilstein J. Nanotechnol. 2019, 10, 9–21, doi:10.3762/bjnano.10.2

• dopant concentration). Keywords: laser pyrolysis; nanoparticles; optical bandgap; Zn/F-doped SnO2; Introduction Recently, there has been growing interest in the field of transparent conducting oxides and wide bandgap oxide nanocrystalline materials such as tin oxide (SnO2). It is generally agreed that

• case, the bandgap values decreased with increasing metal dopant content, down to 3.93 eV for 4 atom % Nd [24]. The FTO films were also successfully tested for other applications such as anticorrosive coatings on steel for fuel cell bipolar plates [25], sensors for liquefied petroleum gas [26

Charged particle single nanometre manufacturing

• Philip D. Prewett,
• Cornelis W. Hagen,
• Claudia Lenk,
• Steve Lenk,
• Marcus Kaestner,
• Tzvetan Ivanov,
• Ahmad Ahmad,
• Ivo W. Rangelow,
• Xiaoqing Shi,
• Stuart A. Boden,
• Alex P. G. Robinson,
• Dongxu Yang,
• Sangeetha Hari,
• Marijke Scotuzzi and
• Ejaz Huq

Beilstein J. Nanotechnol. 2018, 9, 2855–2882, doi:10.3762/bjnano.9.266

• the resist through sputtering and loss of substrate crystallinity. The situation for Ga+ ions is further complicated by the property of Ga+ as a p-type dopant of silicon. Scattering and range can be calculated using Monte Carlo simulation codes with typical results as shown in Figure 3 [30]. The

• undesirable effects such as dopant spreading associated with local temperature rise. 3.1.1 Experimental set-ups forFE-eSPL. A pattern is written by moving the scanning probe along a pre-defined path using a piezo-scanner [144]. FE-eSPL systems are typically operated in a constant-current mode [120][126], in

Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Eleonora M. Danilina and
• Sergei N. Chebotarev

Beilstein J. Nanotechnol. 2018, 9, 2794–2801, doi:10.3762/bjnano.9.261

• , GaAs1−xBix films were grown on GaAs(100) substrates. The thickness of the GaAs1−xBix layers was 20 nm. The results of XRD studies of the epitaxial layer of GaAsBi are shown in Figure 3a. Bi is an isovalent dopant material for III–V compounds and replaces group-V element. Consequently, the GaAs1−xBix

Oriented zinc oxide nanorods: A novel saturable absorber for lasers in the near-infrared

• Pavel Loiko,
• Tanujjal Bora,
• Josep Maria Serres,
• Haohai Yu,
• Magdalena Aguiló,
• Francesc Díaz,
• Uwe Griebner,
• Valentin Petrov,
• Xavier Mateos and
• Joydeep Dutta

Beilstein J. Nanotechnol. 2018, 9, 2730–2740, doi:10.3762/bjnano.9.255

• accommodate such transition-metal ions as Mn2+ or Co2+ in the Td sites. This coordination is attractive for high ground-state transition cross-sections, so that the absorption saturation in the visible and near-IR can be observed. Moreover, the dopant ions can promote the absorption saturation due to the

Two-dimensional semiconductors pave the way towards dopant-based quantum computing

• José Carlos Abadillo-Uriel,
• Belita Koiller and
• María José Calderón

Beilstein J. Nanotechnol. 2018, 9, 2668–2673, doi:10.3762/bjnano.9.249

• conduction band minimum at k = 0, thus no exchange or tunnel coupling oscillations. Considering the properties of currently available 2D semiconductor materials, we access the feasibility of such a proposal in terms of quantum manipulability of isolated dopants (for single qubit operations) and dopant pairs

• [9] and exchange [10] coupling of electrons bound to pairs of donors as the relative positions of the donors vary. Although no oscillatory behavior is expected for coplanar dopant pairs relative to (001) planes under tensile stress, any individual dopant deviation in the z-direction restores the

• oscillations [11]. This problem can be deterrent to the implementation of quantum computing in Si due to the relative lack of control about the exact position of dopants in the bulk. Alternative proposals suggested to overcome this difficulty include hybrid dopant–quantum dot structures [12][13], a charge–spin

Nanostructured liquid crystal systems and applications

• Alexei R. Khokhlov and
• Alexander V. Emelyanenko

Beilstein J. Nanotechnol. 2018, 9, 2644–2645, doi:10.3762/bjnano.9.245

• structure on the nanoscale level for detection of small fractions of dopant materials. In this respect, much attention has been paid to the investigation of liquid crystal droplets dissolved in liquid, in particular, to the photoinduced orientation of liquid crystal molecules at the surface of a droplet

Impact of the anodization time on the photocatalytic activity of TiO₂ nanotubes

• Jesús A. Díaz-Real,
• Geyla C. Dubed-Bandomo,
• Juan Galindo-de-la-Rosa,
• Luis G. Arriaga,
• Janet Ledesma-García and
• Nicolas Alonso-Vante

Beilstein J. Nanotechnol. 2018, 9, 2628–2643, doi:10.3762/bjnano.9.244

• transport [46]. While the observed metallic Ti is attributed to the metal substrate, no significant contribution of the rutile phase was observed. The latter is also consistent with the observations of Dozzi et al., where even small amounts of F dopant atoms prevented the thermal transition from anatase to

• improved crystalline stability, attributed to the F dopant atoms inducing a higher UV absorption, while N dopant atoms were associated with the promotion of the red-shift [39][47]. Based on the results from XPS, XRD and photoelectrochemistry we suggest that the TNTs have undergone simultaneous doping with

• was performed to access the capacitance of the space-charge region and then plot the Mott–Schottky (M–S) curves. Figure 8a shows the curves obtained for the samples, where the capacitance increases its value with decreasing potentials. From the slope, the number of dopant atoms can be obtained using

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO₂/Si₃N₄-coating

• Dirk König,
• Daniel Hiller,
• Noël Wilck,
• Birger Berghoff,
• Merlin Müller,
• Sangeeta Thakur,
• Giovanni Di Santo,
• Luca Petaccia,
• Joachim Mayer,
• Sean Smith and
• Joachim Knoch

Beilstein J. Nanotechnol. 2018, 9, 2255–2264, doi:10.3762/bjnano.9.210

• ) currently used in ultralarge scale integration (ULSI) faces serious miniaturization challenges below the 14 nm technology node such as dopant out-diffusion and inactivation by clustering in Si-based field-effect transistors (FETs). Moreover, self-purification and massively increased ionization energy cause

• doping of silicon (Si) has been a key technique and prerequisite for Si-based electronics for decades [1]. Miniaturization in Si ultralarge scale integration (ULSI) became increasingly difficult as device features approached the characteristic lengths of dopant out-diffusion, clustering and inactivation

• [2]. The considerable broadening of dopant profiles from drain/source regions into gate areas persists [3]. Moreover, required ULSI transistor functionality and emerging applications of Si-nanocrystals (NCs) [4] unveiled additional doping issues: self-purification [5][6], suppressed dopant ionization

Electrospun one-dimensional nanostructures: a new horizon for gas sensing materials

• Muhammad Imran,
• Nunzio Motta and
• Mahnaz Shafiei

Beilstein J. Nanotechnol. 2018, 9, 2128–2170, doi:10.3762/bjnano.9.202

• increases with increasing ethanol concentration below 100 ppm. While for the ZnO sensor, the increased rate of response slows down above 1000 ppm ethanol. The ethanol responds to the IZO with 10% dopant in the nanotube sensor. However, the undoped ZnO exhibits lower response to ethanol by about 50% [200]. α

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

• Noel Kennedy,
• Ray Duffy,
• Luke Eaton,
• Dan O’Connell,
• Scott Monaghan,
• Shane Garvey,
• James Connolly,
• Chris Hatem,
• Justin D. Holmes and
• Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

• MLD on SOI, which allows for the impact of reduced substrate dimensions to be probed. The doping was done through functionalization of the substrates with chemically bound allyldiphenylphosphine dopant molecules. Following functionalization, the samples were capped and annealed to enable the diffusion

• of dopant atoms into the substrate and their activation. Electrical and material characterisation was carried out to determine the impact of MLD on surface quality and activation results produced by the process. MLD has proven to be highly applicable to SOI substrates producing doping levels in

• excess of 1 × 1019 cm−3 with minimal impact on surface quality. Hall effect data proved that reducing SOI dimensions from 66 to 13 nm lead to an increase in carrier concentration values due to the reduced volume available to the dopant for diffusion. Dopant trapping was found at both Si–SiO2 interfaces

Metal-free catalysis based on nitrogen-doped carbon nanomaterials: a photoelectron spectroscopy point of view

• Mattia Scardamaglia and
• Carla Bittencourt

Beilstein J. Nanotechnol. 2018, 9, 2015–2031, doi:10.3762/bjnano.9.191

• temperatures up to 950 °C the amount of pure substitutional nitrogen (graphitic) and the DOS increase (Figure 3). As mentioned, the low-energy electronic excitation and the selectivity for oxygen dissociation strongly depend on the type of nitrogen dopant present in the sample, as we will discuss in the next

• ]. Post-synthesis treatments such as cold plasmas and ion implantation emerge as versatile options to engineer nanostructured carbon materials with different elements [80]. These techniques allow for high dopant concentrations (about 10 atom %) and for the design of different architectures adjusting the

• , the latter has only two neighboring carbon atoms to form two σ-bonds. One electron occupies the pz-orbital and the other two form an electron lone pair without occupying the π*-band. Therefore, pyridinic nitrogen does not behave as an electron dopant. Instead, the pyridinic vacancy complex has a hole

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si_1−xGe_x and Si layers

• Richard Daubriac,
• Emmanuel Scheid,
• Hiba Rizk,
• Richard Monflier,
• Sylvain Joblot,
• Rémi Beneyton,
• Pablo Acosta Alba,
• Sébastien Kerdilès and
• Filadelfo Cristiano

Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

• Grenoble, France 10.3762/bjnano.9.184 Abstract In this paper, we present an enhanced differential Hall effect measurement method (DHE) for ultrathin Si and SiGe layers for the investigation of dopant activation in the surface region with sub-nanometre resolution. In the case of SiGe, which constitutes the

• thick SiGe test structure fabricated by CVD and uniformly doped in situ during growth. The developed method is finally applied to the investigation of dopant activation achieved by advanced annealing methods (including millisecond and nanosecond laser annealing) in two material systems: 6 nm thick

• SiGeOI and 11 nm thick SOI. In both cases, DHE is shown to be a uniquely sensitive characterisation technique for a detailed investigation of dopant activation in ultrashallow layers, providing sub-nanometre resolution for both dopant concentration and carrier mobility depth profiles. Keywords: carrier

Sulfur-, nitrogen- and platinum-doped titania thin films with high catalytic efficiency under visible-light illumination

• Boštjan Žener,
• Lev Matoh,
• Giorgio Carraro,
• Bojan Miljević and
• Romana Cerc Korošec

Beilstein J. Nanotechnol. 2018, 9, 1629–1640, doi:10.3762/bjnano.9.155

• width (band gap is 3.44 eV for REF, 3.16 eV for Urea_15 and 2.81 eV for Thiourea_15). X-ray photoelectron spectroscopy XPS measurements were performed on selected samples to determine the amount of dopant present and the oxidation states. XPS spectra for selected samples are presented in Figure 5. The

• Urea_20. The numbers describe the molar percentage of the added dopant (relative to TiO2). The same process was performed for thiourea. Synthesis involving H2SO4 (doping with NH4NO3 and H2PtCl6): 3.68 mL of TiCl4 were dissolved in a solution containing 60 mL of distilled water and different volumes of 12