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Search for "semiconductor" in Full Text gives 618 result(s) in Beilstein Journal of Nanotechnology. Showing first 200.

Out-of-plane polarization induces a picosecond photoresponse in rhombohedral stacked bilayer WSe2

  • Guixian Liu,
  • Yufan Wang,
  • Zhoujuan Xu,
  • Zhouxiaosong Zeng,
  • Lanyu Huang,
  • Cuihuan Ge and
  • Xiao Wang

Beilstein J. Nanotechnol. 2024, 15, 1362–1368, doi:10.3762/bjnano.15.109

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  • (TMDs) through twist misalignment [18][19], which brings about fascinating physical phenomena [25][26][27][28][29]. Stacking semiconductor vdW materials with suitable bandgaps at specific angles not only breaks OOP symmetry, but also combines excellent semiconductor properties with spontaneous
  • polarization, offering promising advances in optoelectronics [23][30]. One of the key optoelectronic phenomena in 2D semiconductor materials is the photocurrent response. The polarization, which results in spontaneous photocurrent under zero bias, gives rise to the bulk photovoltaic effect (BPVE), which can
  • ) at room temperature. The electrical properties of the devices were characterized using an Agilent B1500 semiconductor analyzer in a Lake Shore vacuum chamber (10−4 Pa). SPCM and TRPC measurement The photocurrent maps were all obtained under zero bias using a custom-built scanning photocurrent
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Published 06 Nov 2024

Mn-doped ZnO nanopowders prepared by sol–gel and microwave-assisted sol–gel methods and their photocatalytic properties

  • Cristina Maria Vlăduț,
  • Crina Anastasescu,
  • Silviu Preda,
  • Oana Catalina Mocioiu,
  • Simona Petrescu,
  • Jeanina Pandele-Cusu,
  • Dana Culita,
  • Veronica Bratan,
  • Ioan Balint and
  • Maria Zaharescu

Beilstein J. Nanotechnol. 2024, 15, 1283–1296, doi:10.3762/bjnano.15.104

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  • generated CO2 were measured for both catalysts. These inexpensive semiconductor materials, which proved to be light-responsive, can be further used for developing water depollution technologies based on solar light energy. Keywords: microwave-assisted synthesis; oxalic acid mineralization; semiconductor
  • semiconductor with many versatile and attractive applications in optical, optoelectronic, and photocatalytic fields [35][36][37]. The doping of ZnO with Mn can lead to the development of multifunctional nanostructures, such as room-temperature ferromagnetic materials with potential applications in spintronics
  • catalyst is generally associated with low photocatalytic activity. Accordingly, various modifiers of semiconductor nanomaterials are used to enhance separation of the photogenerated charges, causing a corresponding decrease of PL emission. The correlation between photoluminescence and photocatalytic
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Published 28 Oct 2024

Quantum-to-classical modeling of monolayer Ge2Se2 and its application in photovoltaic devices

  • Anup Shrivastava,
  • Shivani Saini,
  • Dolly Kumari,
  • Sanjai Singh and
  • Jost Adam

Beilstein J. Nanotechnol. 2024, 15, 1153–1169, doi:10.3762/bjnano.15.94

Graphical Abstract
  • . Figure 3 depicts that the monolayer Ge2Se2 is a direct-bandgap semiconductor with a bandgap of the order of 1.12 eV. Valence band maximum (VBM) and conduction band minimum (CBM) are located along the Γ-X path. The computed bandgap value and its dispersion nature are consistent with earlier reported works
  • , ELUMO is the LUMO energy level. The ionization potential is calculated as IP = EVac − EHOMO, where IP, EVac, and EHOMO are ionization potential, vacuum energy level, and HOMO energy level, respectively. The electron affinity at a semiconductor surface is defined as the energy needed to carry an electron
  • the proposed solar cell, we performed a numerical simulation using SCAPS-1D, which solves the fundamental semiconductor equations such as drift–diffusion, Poisson’s equation, and continuity equations as: and where and are the electron and hole current densities at the Fermi levels EFn and EFp
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Published 11 Sep 2024

Photocatalytic methane oxidation over a TiO2/SiNWs p–n junction catalyst at room temperature

  • Qui Thanh Hoai Ta,
  • Luan Minh Nguyen,
  • Ngoc Hoi Nguyen,
  • Phan Khanh Thinh Nguyen and
  • Dai Hai Nguyen

Beilstein J. Nanotechnol. 2024, 15, 1132–1141, doi:10.3762/bjnano.15.92

Graphical Abstract
  • deposition on catalyst surfaces [4][5][6][7]. Therefore, sustainable strategies for both green conversion and atmospheric removal of CH4 are urgently necessary [8][9][10][11]. Semiconductor-based photocatalysis has been attracting scientists’ attention because of its environmental friendliness and easy
  • handling [12][13][14]. Photocatalytic metal oxide semiconductor materials have been utilized for converting solar energy into valuable chemical energy in the field of CH4 conversion [15][16][17]. Methane oxidation presents a particularly promising strategy. The primary objective is to convert methane into
  • valuable products such as formaldehyde (HCHO), methanol (CH3OH), and other value-added oxygenates, which serve as essential precursors in various manufacturing and production processes [18][19]. The n-type semiconductor titanium dioxide (TiO2) has been discovered as a potential photocatalyst material
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Published 02 Sep 2024

Unveiling the potential of alginate-based nanomaterials in sensing technology and smart delivery applications

  • Shakhzodjon Uzokboev,
  • Khojimukhammad Akhmadbekov,
  • Ra’no Nuritdinova,
  • Salah M. Tawfik and
  • Yong-Ill Lee

Beilstein J. Nanotechnol. 2024, 15, 1077–1104, doi:10.3762/bjnano.15.88

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Published 22 Aug 2024

Recent progress on field-effect transistor-based biosensors: device perspective

  • Billel Smaani,
  • Fares Nafa,
  • Mohamed Salah Benlatrech,
  • Ismahan Mahdi,
  • Hamza Akroum,
  • Mohamed walid Azizi,
  • Khaled Harrar and
  • Sayan Kanungo

Beilstein J. Nanotechnol. 2024, 15, 977–994, doi:10.3762/bjnano.15.80

Graphical Abstract
  • increasing their use in daily life [38]. The first ion-sensitive field-effect transistor (IS FETs) biosensor combined the metal–oxide–semiconductor (MOS) structure with glass electrodes for measuring ion activities in electrochemical and biological environments [39]. Subsequently, hydrogen-sensitive MOSFET
  • technology rapidly emerged [40][41]. However, all these FETs were highly bulky and required more space. Nakamoto et al. [42] later devised a biosensor with a novel fabrication method aligned well with the complementary metal–oxide–semiconductor (CMOS) fabrication process. Usually, biosensors convert
  • biorecognition layer, a transducer, and an amplifier (Figure 2). It typically consists of a semiconductor channel and three terminal electrodes named drain, source, and gate [37][49]. The biorecognition layer selectively binds the target biomolecule (analyte), such as enzymes, antibodies, and proteins in a
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Published 06 Aug 2024

Intermixing of MoS2 and WS2 photocatalysts toward methylene blue photodegradation

  • Maryam Al Qaydi,
  • Nitul S. Rajput,
  • Michael Lejeune,
  • Abdellatif Bouchalkha,
  • Mimoun El Marssi,
  • Steevy Cordette,
  • Chaouki Kasmi and
  • Mustapha Jouiad

Beilstein J. Nanotechnol. 2024, 15, 817–829, doi:10.3762/bjnano.15.68

Graphical Abstract
  • ]. Typically, semiconductor-based photocatalysts, such as TiO2, ZnO2, and some other high-bandgap transition-metal dichalcogenides (TMD) have shown their ability to efficiently degrade the activated MB by irradiation [10][11]. Recently, TMD such as MoS2 and WS2, have displayed remarkable potential as
  • cocatalysts. Their catalytic properties can be tailored based on their crystal structure, their surface area, and their morphology [12][13]. When TMD catalysts are intermixed, they form semiconductorsemiconductor junctions, enhancing their photocatalytic properties by promoting charge separation and electron
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Published 05 Jul 2024

Effect of repeating hydrothermal growth processes and rapid thermal annealing on CuO thin film properties

  • Monika Ozga,
  • Eunika Zielony,
  • Aleksandra Wierzbicka,
  • Anna Wolska,
  • Marcin Klepka,
  • Marek Godlewski,
  • Bogdan J. Kowalski and
  • Bartłomiej S. Witkowski

Beilstein J. Nanotechnol. 2024, 15, 743–754, doi:10.3762/bjnano.15.62

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  • devices. Keywords: CuO; hydrothermal method; rapid thermal annealing; thin films; Introduction Copper(II) oxide is a p-type semiconductor possessing a narrow bandgap, along with many beneficial electrical, optical, and magnetic properties. Particularly at the nanoscale, these properties set themselves
  • × magnification. The spectral resolution was of the order of 0.5 cm−1. A 532 nm semiconductor laser was used to illuminate the samples. The measurements were performed without detection of polarization of the scattered light. A liquid nitrogen-cooled multichannel silicon CCD camera was used as a detector. Results
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Published 24 Jun 2024

Level set simulation of focused ion beam sputtering of a multilayer substrate

  • Alexander V. Rumyantsev,
  • Nikolai I. Borgardt,
  • Roman L. Volkov and
  • Yuri A. Chaplygin

Beilstein J. Nanotechnol. 2024, 15, 733–742, doi:10.3762/bjnano.15.61

Graphical Abstract
  • possible to deterministically produce a nanoscale topography on the surface of almost any substrate [1]. FIB milling was originally established in semiconductor technology [2] and materials science applications [3]. Now it is increasingly used for fabrication of complex micro- and nanoscale structures and
  • semiconductor heterostructures [13]. Metal and dielectric layers can be used as hard masks for achieving high resolution and throughput of the FIB nanofabrication process [14]. Modification of integrated circuits [15] is an industrially relevant application of multilayer structure processing. Effective
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Published 24 Jun 2024

Elastic modulus of β-Ga2O3 nanowires measured by resonance and three-point bending techniques

  • Annamarija Trausa,
  • Sven Oras,
  • Sergei Vlassov,
  • Mikk Antsov,
  • Tauno Tiirats,
  • Andreas Kyritsakis,
  • Boris Polyakov and
  • Edgars Butanovs

Beilstein J. Nanotechnol. 2024, 15, 704–712, doi:10.3762/bjnano.15.58

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  • geometry, utilising a 600 W Cu anode (Cu Kα radiation, λ = 1.5406 Å) X-ray tube. In four steps, (100)Si wafers (Semiconductor wafer, Inc.) with 50 nm thermal oxide, were processed to create the patterned silicon substrates with grooves and inverted pyramids. First, the patterns were created in a
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Published 18 Jun 2024

Aero-ZnS prepared by physical vapor transport on three-dimensional networks of sacrificial ZnO microtetrapods

  • Veaceslav Ursaki,
  • Tudor Braniste,
  • Victor Zalamai,
  • Emil Rusu,
  • Vladimir Ciobanu,
  • Vadim Morari,
  • Daniel Podgornii,
  • Pier Carlo Ricci,
  • Rainer Adelung and
  • Ion Tiginyanu

Beilstein J. Nanotechnol. 2024, 15, 490–499, doi:10.3762/bjnano.15.44

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  • metal oxides [1][9][10]. Metal oxides include TiO2, ZnO, Al2O3, WO3, Cu2O, CuO, SnO2, Fe2O3, Bi2O3, Ag3PO4, BiWO4, BiVO4, BiFeO3, and SeTiO3, while chalcogenides are represented by ZnS, ZnSe, CdS, PbS, CdSe, SnS2, and Bi2S3. Among porous semiconductor materials, recently developed super-lightweight ones
  • for the preparation of the abovementioned semiconductor-based aeromaterials. Most of these aeromaterials have been produced by hydride vapor phase epitaxy (HVPE) [11][12][13][14][15][16][17][18]. Particularly, an aero-ZnS material exhibiting hydrophilic properties under tension and hydrophobic
  • recombination [35]. Therefore, the photoluminescence properties of the prepared aero-ZnS materials, including the near-bandgap emission, are similar to those inherent to semiconductor ZnS single crystals. The PL band around 2.4 eV is also excited by intraband-energy radiation with a wavelength of 405 nm (3.06
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Published 02 May 2024

Heat-induced morphological changes in silver nanowires deposited on a patterned silicon substrate

  • Elyad Damerchi,
  • Sven Oras,
  • Edgars Butanovs,
  • Allar Liivlaid,
  • Mikk Antsov,
  • Boris Polyakov,
  • Annamarija Trausa,
  • Veronika Zadin,
  • Andreas Kyritsakis,
  • Loïc Vidal,
  • Karine Mougin,
  • Siim Pikker and
  • Sergei Vlassov

Beilstein J. Nanotechnol. 2024, 15, 435–446, doi:10.3762/bjnano.15.39

Graphical Abstract
  • silicon substrates with square holes were prepared from (100) silicon wafers (Semiconductor Wafer, Inc.) with 50 nm thermal oxide in four steps as follows: 1) conventional optical lithography process to produce the desired pattern in a photoresist on the wafer; 2) selective removal of SiO2 using buffered
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Published 22 Apr 2024

Classification and application of metal-based nanoantioxidants in medicine and healthcare

  • Nguyen Nhat Nam,
  • Nguyen Khoi Song Tran,
  • Tan Tai Nguyen,
  • Nguyen Ngoc Trai,
  • Nguyen Phuong Thuy,
  • Hoang Dang Khoa Do,
  • Nhu Hoa Thi Tran and
  • Kieu The Loan Trinh

Beilstein J. Nanotechnol. 2024, 15, 396–415, doi:10.3762/bjnano.15.36

Graphical Abstract
  • ]. The heterostructures increase surface electron deficiency, redox couples, and oxygen vacancies through an intrinsic electric field and lattice mismatch at the metal–semiconductor interface. Thus, a high level of oxygen vacancies enhances the adsorption and activation of oxygen-containing ROS, that is
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Published 12 Apr 2024

On the mechanism of piezoresistance in nanocrystalline graphite

  • Sandeep Kumar,
  • Simone Dehm and
  • Ralph Krupke

Beilstein J. Nanotechnol. 2024, 15, 376–384, doi:10.3762/bjnano.15.34

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  • semiconducting grain boundaries can be considerably increased in the presence of strain. Hence, the asymmetric metallic grain boundaries undergo a metal–semiconductor transition in the presence of strain. This effect could open a way to utilize grain boundaries in graphene for fabricating highly sensitive
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Published 08 Apr 2024

Investigating ripple pattern formation and damage profiles in Si and Ge induced by 100 keV Ar+ ion beam: a comparative study

  • Indra Sulania,
  • Harpreet Sondhi,
  • Tanuj Kumar,
  • Sunil Ojha,
  • G R Umapathy,
  • Ambuj Mishra,
  • Ambuj Tripathi,
  • Richa Krishna,
  • Devesh Kumar Avasthi and
  • Yogendra Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 367–375, doi:10.3762/bjnano.15.33

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  • performed on Si and Ge substrates. A correlation between ripple morphology and ion beam parameters was derived to understand the damage incurred by Ar+ ions inside both materials using RBS-c measurements. Experimental Details Commercially available Si and Ge wafers, procured from Semiconductor wafers Inc
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Published 05 Apr 2024

Controllable physicochemical properties of WOx thin films grown under glancing angle

  • Rupam Mandal,
  • Aparajita Mandal,
  • Alapan Dutta,
  • Rengasamy Sivakumar,
  • Sanjeev Kumar Srivastava and
  • Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

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  • fascinating optical and electrical properties [1]. WOx is a wide-bandgap oxide semiconductor with a large excitonic binding energy of 0.15 eV and a high optical absorption coefficient (≥104 cm−1 in the UV region) [2]. These, in conjunction with decent carrier mobility (12 cm2·V−1·s−1), make this material an
  • -stoichiometric compositions and polymorphs, WOx usually behaves as an n-type semiconductor because an unintentional incorporation of a certain amount of reduced W cations is thermodynamically inevitable in these films [8]. It is, therefore, possible to tune the physicochemical properties, such as work function
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Published 02 Apr 2024

Investigating structural and electronic properties of neutral zinc clusters: a G0W0 and G0W0Г0(1) benchmark

  • Sunila Bakhsh,
  • Muhammad Khalid,
  • Sameen Aslam,
  • Muhammad Sohail,
  • Muhammad Aamir Iqbal,
  • Mujtaba Ikram and
  • Kareem Morsy

Beilstein J. Nanotechnol. 2024, 15, 310–316, doi:10.3762/bjnano.15.28

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  • functional theory (DFT) calculations at different levels of theory to study the transition states (vdW to semiconductor-like states) in Zn clusters. In addition, the approaches used to study the electronic properties, such as ionization potentials (IPs) of zinc, are based on the ∆-SCF methods; for some
  • metal energy gap. Apart from this situation, for small-size clusters or nanoparticles, it is possible to observe quantum confinement effects resulting in an indeterminate bandgap, such as in the case of semiconductor clusters. As the size of the cluster decreases, the electronic energy levels become
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Published 15 Mar 2024

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS2 thin films with domains much smaller than the laser spot size

  • Felipe Wasem Klein,
  • Jean-Roch Huntzinger,
  • Vincent Astié,
  • Damien Voiry,
  • Romain Parret,
  • Houssine Makhlouf,
  • Sandrine Juillaguet,
  • Jean-Manuel Decams,
  • Sylvie Contreras,
  • Périne Landois,
  • Ahmed-Azmi Zahab,
  • Jean-Louis Sauvajol and
  • Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

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  • transition to a direct bandgap semiconductor with very high photoluminescence quantum yield when thinned down to a monolayer [13][14][15][16][17]. Its unique electronic and optical properties could provide an edge in many future applications. The multilayers MoS2 structures are of the most common 2Hc type
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Published 07 Mar 2024

Design, fabrication, and characterization of kinetic-inductive force sensors for scanning probe applications

  • August K. Roos,
  • Ermes Scarano,
  • Elisabet K. Arvidsson,
  • Erik Holmgren and
  • David B. Haviland

Beilstein J. Nanotechnol. 2024, 15, 242–255, doi:10.3762/bjnano.15.23

Graphical Abstract
  • etch rate of 10 μm/min. The isotropic etch results in an uneven clamping line, as shown in Figure 1g, leading to variations in the mechanical resonant frequency. Before the final etch and release step, we apply a Nitto Semiconductor Wafer Tape to the back side of the wafer, holding it together during
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Published 15 Feb 2024

Ion beam processing of DNA origami nanostructures

  • Leo Sala,
  • Agnes Zerolová,
  • Violaine Vizcaino,
  • Alain Mery,
  • Alicja Domaracka,
  • Hermann Rothard,
  • Philippe Boduch,
  • Dominik Pinkas and
  • Jaroslav Kocišek

Beilstein J. Nanotechnol. 2024, 15, 207–214, doi:10.3762/bjnano.15.20

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  • regimes become the basis of commonly used material processing techniques such as high-energy ion implantation, widely applied in laser, detector, and semiconductor industries [30]. Finally, at low (keV) energies, the interaction of heavy ions is dominated by nuclear stopping, which is used in the most
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Published 12 Feb 2024

CdSe/ZnS quantum dots as a booster in the active layer of distributed ternary organic photovoltaics

  • Gabriela Lewińska,
  • Piotr Jeleń,
  • Zofia Kucia,
  • Maciej Sitarz,
  • Łukasz Walczak,
  • Bartłomiej Szafraniak,
  • Jerzy Sanetra and
  • Konstanty W. Marszalek

Beilstein J. Nanotechnol. 2024, 15, 144–156, doi:10.3762/bjnano.15.14

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  • –COOH groups, they can be easily labeled for chemical and biological applications. Low-molecular-weight organic molecules coat highly luminescent semiconductor nanocrystals. Materials and Methods Thin films, the intended active layers, were fabricated using the spin-coating method. The layers were a
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Published 02 Feb 2024

A visible-light photodetector based on heterojunctions between CuO nanoparticles and ZnO nanorods

  • Doan Nhat Giang,
  • Nhat Minh Nguyen,
  • Duc Anh Ngo,
  • Thanh Trang Tran,
  • Le Thai Duy,
  • Cong Khanh Tran,
  • Thi Thanh Van Tran,
  • Phan Phuong Ha La and
  • Vinh Quang Dang

Beilstein J. Nanotechnol. 2023, 14, 1018–1027, doi:10.3762/bjnano.14.84

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  • ][18]. Semiconductors are the heart of photodetectors as their bandgap allows for the absorption of photons in the desired wavelength range [19]. There are many semiconductor materials developed for this application. Among them, zinc oxide (ZnO) has been studied extensively over the last decades
  • relations under reverse and bias voltages, indicating a good ohmic contact between semiconductor materials and Ag electrodes [42]. It is worth noting that the current rise corresponds to the light intensity increase. The highest photocurrent reached 18 μA under a light illumination of 1.28 mW·cm−2. The low
  • negatively charged ions [43][61], following Equation 5: In addition, decorating CuO NPs onto ZnO NRs forms p–n junctions between the two materials. The heterojunction formation leads to a concentration gradient of charge carriers at the interfaces. CuO NPs act as a p-type semiconductor, in which holes are
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Published 13 Oct 2023

Nanoarchitectonics of photothermal materials to enhance the sensitivity of lateral flow assays

  • Elangovan Sarathkumar,
  • Rajasekharan S. Anjana and
  • Ramapurath S. Jayasree

Beilstein J. Nanotechnol. 2023, 14, 988–1003, doi:10.3762/bjnano.14.82

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  • nanomaterials, including noble metal nanomaterials, semiconductor nanomaterials, carbon-based nanomaterials, and polymeric nanomaterials. Then, we review the unique nanoscale architecture of nanomaterials responsible for their photothermal properties. Finally, we explore the current status of photothermal LFA
  • properties, that is, plasmonic materials (e.g., Au, Ag, and Pt), semiconductor materials (e.g., transition metal oxides, transition metal chalcogenides, and transition metal dichalcogenides), carbon-based nanomaterials (such as graphene oxide and carbon nanotubes), and polymer nanomaterials [33][34] (Figure
  • nanosheets exhibited a high PCE of 52% at 808 nm [40]. Palladium nanocorollae have shown a photothermal effect due to NIR LSPR with a temperature increase up to 50 °C [36]. Semiconductor nanomaterials: Generation and relaxation of electron–hole pairs are responsible for heat generation in semiconductor
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Published 04 Oct 2023

Isolation of cubic Si3P4 in the form of nanocrystals

  • Polina K. Nikiforova,
  • Sergei S. Bubenov,
  • Vadim B. Platonov,
  • Andrey S. Kumskov,
  • Nikolay N. Kononov,
  • Tatyana A. Kuznetsova and
  • Sergey G. Dorofeev

Beilstein J. Nanotechnol. 2023, 14, 971–979, doi:10.3762/bjnano.14.80

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  • calculations; semiconductor nanocrystals; silicon phosphide; Introduction Advancements in electronics and related fields are calling for new ways of synthesizing compounds. Subsequently, recognizing and utilizing the special properties of nanoparticles (NPs) of new materials using emerging methods offers a
  • disordered semiconductor material would be to find the energy at which the attenuation coefficient exceeds 104 cm−1 (the optical gap estimated this way amounts to 2.3 eV). All of these observations disprove earlier theoretical assumptions of defective zinc blende Si3P4 as being a narrow-bandgap semiconductor
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Published 26 Sep 2023

Silver-based SERS substrates fabricated using a 3D printed microfluidic device

  • Phommachith Sonexai,
  • Minh Van Nguyen,
  • Bui The Huy and
  • Yong-Ill Lee

Beilstein J. Nanotechnol. 2023, 14, 793–803, doi:10.3762/bjnano.14.65

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  • ], porous aluminum oxide [38], and semiconductors [39] have been reported. Dielectric and semiconductor substrates, such as ZnO nanowires, silicon nanowires, and porous silicon (PS), are particularly popular because of their larger contribution to the amplification of the Raman signal and longer shelf life
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Published 21 Jul 2023
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