Theoretical study of the electronic and optical properties of a composite formed by the zeolite NaA and a magnetite cluster

• Joel Antúnez-García,
• Roberto Núñez-González,
• Vitalii Petranovskii,
• H’Linh Hmok,
• Armando Reyes-Serrato,
• Fabian N. Murrieta-Rico,
• Mufei Xiao and
• Jonathan Zamora

Beilstein J. Nanotechnol. 2025, 16, 44–53, doi:10.3762/bjnano.16.5

• , 1.60, 1.90, and 1.70 for aluminum, oxygen, silicon, sodium, and sulfur, respectively; the convergence number, that is, the smallest muffin-tin radii times the plane wave cutoff parameter, is set at RmtKmax = 6.0; the maximum l value for partial waves used inside atomic spheres is lmax = 10; and the

Bioinspired nanofilament coatings for scale reduction on steel

• Siad Dahir Ali,
• Mette Heidemann Rasmussen,
• Jacopo Catalano,
• Christian Husum Frederiksen and
• Tobias Weidner

Beilstein J. Nanotechnol. 2025, 16, 25–34, doi:10.3762/bjnano.16.3

• surfaces. The elemental composition in Figure 4B shows the silicon emission expected for the SNF film, which is not present on the bare steel surface. Oxygen and carbon, additional components of the SNF coating, are also detected for the SNFs. At the same time, these elements are also observed on the bare

Orientation-dependent photonic bandgaps in gold-dust weevil scales and their titania bioreplicates

• Norma Salvadores Farran,
• Limin Wang,
• Primoz Pirih and
• Bodo D. Wilts

Beilstein J. Nanotechnol. 2025, 16, 1–10, doi:10.3762/bjnano.16.1

• in-lens secondary electron detector at 5 kV acceleration voltage. These samples were coated with gold using a Cressington 208 HR sputter coater. Elemental analysis was performed with 8 kV acceleration voltage, using an EDX detector attached to the Zeiss SEM (X-Max silicon drift energy-dispersive

Heterogeneous reactions in a HFCVD reactor: simulation using a 2D model

• Xochitl Aleyda Morán Martínez,
• José Alberto Luna López,
• Zaira Jocelyn Hernández Simón,
• Gabriel Omar Mendoza Conde,
• José Álvaro David Hernández de Luz and
• Godofredo García Salgado

Beilstein J. Nanotechnol. 2024, 15, 1627–1638, doi:10.3762/bjnano.15.128

• for the subsequent growth of the SiOx films. These SiOx films have interesting properties and embedded nanostructures, which make them excellent dielectric, optoelectronic, and electroacoustic materials for the fabrication of devices compatible with silicon-based technology. Keywords: 2D model

• ; chemical reactions; flow dynamics; HFCVD; hot filament chemical vapor deposition; SiOx films; Introduction The growth of materials such as non-stoichiometric silicon oxide (SiOx) is an important step in semiconductor devices development. Control of deposition parameters determines the success of the

• process and the properties of the films, with the most important parameters being substrate temperature, gas pressure, species concentration, and flow velocity [1]. The structural, optical, and electrical properties of the SiOx, more generally known as silicon-rich oxide (SRO), films are determined by the

Facile synthesis of size-tunable L-carnosine-capped silver nanoparticles and their role in metal ion sensing and catalytic degradation of p-nitrophenol

• Akash Kumar,
• Ridhima Chadha,
• Abhishek Das,
• Nandita Maiti and
• Rayavarapu Raja Gopal

Beilstein J. Nanotechnol. 2024, 15, 1576–1592, doi:10.3762/bjnano.15.124

• edge filter using 532 nm as an excitation source. The Raman signal of the silicon wafer at 520 cm−1 was considered the reference point for spectrometer calibration, ensuring a spectral measurement accuracy better than 1 cm−1. The Raman spectra acquisition times were approximately 25 s for solid ʟ

Effect of radiation-induced vacancy saturation on the first-order phase transformation in nanoparticles: insights from a model

• Aram Shirinyan and
• Yuriy Bilogorodskyy

Beilstein J. Nanotechnol. 2024, 15, 1453–1472, doi:10.3762/bjnano.15.117

• comparison, in SiC, the energy of silicon vacancy migration is nearly 2.4 eV, and the energy of carbon vacancy migration is about 3.6 eV [42][43][44]. We focus on vacancy migration energies at the end of the paper and detail the findings. The surface energies σα and σβ of an iron-like nanoparticle are

Lithium niobate on insulator: an emerging nanophotonic crystal for optimized light control

• Midhun Murali,
• Amit Banerjee and
• Tanmoy Basu

Beilstein J. Nanotechnol. 2024, 15, 1415–1426, doi:10.3762/bjnano.15.114

• potential as a next-generation photovoltaic technology [41][42]. These cells offer a compelling alternative to traditional silicon solar cells because of the low manufacturing cost. Additionally, CQDs possess a unique property – their bandgap can be tuned by adjusting the size of the dots. This allows them

• telecommunications, sensing, and quantum optics applications, driving innovation in photonic technologies. We designed one-dimensional photonic crystals (1D PCs) made of lithium niobate with titanium dioxide and silicon dioxide using electromagenetic simulations. Our goal was to maximize reflectivity in the infrared

A biomimetic approach towards a universal slippery liquid infused surface coating

• Ryan A. Faase,
• Madeleine H. Hummel,
• AnneMarie V. Hasbrook,
• Andrew P. Carpenter and
• Joe E. Baio

Beilstein J. Nanotechnol. 2024, 15, 1376–1389, doi:10.3762/bjnano.15.111

• cyclic olefin copolymer, silicon, and stainless steel substrates, by first growing a PDA film on each substrate. This was followed by a hydrophobic liquid anchor layer created by functionalizing the PDA film with a fluorinated thiol. Finally, perfluorodecalin was applied to the surface immediately prior

• copolymer (COC), silicon, and 316 stainless steel (SS) as our substrates. These substrates were first coated with PDA; then, a fluorinated thiol was attached to serve as the anchor for the infused fluid. The resulting surface modifications were then characterized by water contact angle measurements, atomic

• a 1:1 mixture of ethanol and acetone for 30 min. Si substrates were fabricated via a diamond-tipped blade in a Disco wafer saw (Disco, Tokyo, Japan) from a silicon wafer cut into 1 × 1 cm2 substrates. These Si substrates were left overnight to soak in DI water and then sonicated in 20 min intervals

Green synthesis of carbon dot structures from Rheum Ribes and Schottky diode fabrication

• Muhammed Taha Durmus and
• Ebru Bozkurt

Beilstein J. Nanotechnol. 2024, 15, 1369–1375, doi:10.3762/bjnano.15.110

• steady-state fluorescence measurements. In the second part of the study, CDs were dripped onto silicon substrates, and a CDs thin film was formed by evaporation. A diode structure was obtained by evaporating gold with the shadow mask technique on the CDs film, and the current–voltage characteristics of

• dried to synthesize CDs. Acetone, methanol, silicon, gold powder, and aluminum were purchased from Sigma-Aldrich, Merck, and Alfa Aesar. All studies were carried out at room temperature. Instruments Various devices were used for the structural, morphological, and optical characterization of the CDs. FEI

• supernatant was removed by decantation and a stock solution was prepared to be used in the studies. The prepared stock solution was stored at 4 °C to prevent contamination [15]. Schottky diode fabrication An n-type silicon substrate was used for Schottky diode fabrication. In the first step, the silicon

Interaction of graphene oxide with tannic acid: computational modeling and toxicity mitigation in C. elegans

• Romana Petry,
• James M. de Almeida,
• Francine Côa,
• Felipe Crasto de Lima,
• Diego Stéfani T. Martinez and
• Adalberto Fazzio

Beilstein J. Nanotechnol. 2024, 15, 1297–1311, doi:10.3762/bjnano.15.105

• temperature; for XPS, the suspensions were dripped on a silicon substrate. Computational methods MD simulations of interactions between TA and the GO surface were performed in LAMMPS, applying ReaxFF reactive force field [72]. MD simulations were conducted under constant pressure (P) and temperature (T), the

New design of operational MEMS bridges for measurements of properties of FEBID-based nanostructures

• Bartosz Pruchnik,
• Krzysztof Kwoka,
• Ewelina Gacka,
• Dominik Badura,
• Piotr Kunicki,
• Andrzej Sierakowski,
• Paweł Janus,
• Tomasz Piasecki and
• Teodor Gotszalk

Beilstein J. Nanotechnol. 2024, 15, 1273–1282, doi:10.3762/bjnano.15.103

• of the nanostructures into larger devices remains one of the major challenges, especially when non-silicon materials (such as carbon nanotubes or multimaterial nanowires) are used [8][9][10]. Among the fabrication methods, particle beam-based methods offer the greatest versatility for rapid

• nanomodification. Finally, we show results of resistance measurements of a free-standing FEBID nanostructure deposited across the RoI of a LiS-embedded opMEMS bridge. Materials and Methods Design of opMEMS bridges The opMEMS were fabricated on an undoped ⟨110⟩ silicon substrate on which a 40 nm silicon nitride

• (Si3N4) layer was deposited via CVD. The 40 nm thick platinum paths were then patterned by lift-off photolithography. The opMEMS bridge body was defined photolithographically with a feature size of 2 µm, etched by dry oxygen plasma etching (DRIE) and then released by KOH anisotropic wet silicon etching

Photocatalytic methane oxidation over a TiO₂/SiNWs p–n junction catalyst at room temperature

• Qui Thanh Hoai Ta,
• Luan Minh Nguyen,
• Ngoc Hoi Nguyen,
• Phan Khanh Thinh Nguyen and
• Dai Hai Nguyen

Beilstein J. Nanotechnol. 2024, 15, 1132–1141, doi:10.3762/bjnano.15.92

• recombination of charge carriers in semiconductors is a main drawback for photocatalytic oxidative coupling of methane (OCM) reactions. Herein, we propose a novel catalyst by developing a p–n junction titania–silicon nanowires (TiO2/SiNWs) heterostructure. The structure is fabricated by atomic layer deposition

• . Experimental Chemicals and materials Commercial p-type Si 3-inch wafers (⟨100⟩ orientation, boron-doped, resistivity = 0.01–1 Ω·cm) were purchased from Silicon Mitus Corporation, South Korea. Silver nitrate (AgNO3, 0.1 M), hydrofluoric acid HF (50 wt %), nitric acid (HNO3, 63%), acetone, and ethanol were

• over the TiO2/SiNWs sample. Proposed mechanism of photocatalytic CH4 oxidation reaction over p–n junction TiO2/SiNWs sample. Schematic illustration of TiO2/SiNWs chip fabrication starting from a p-type silicon wafer. A thin layer of TiO2 was deposited on the Si NWs via ALD. Comparison of the OCM

Direct electron beam writing of silver using a β-diketonate precursor: first insights

• Katja Höflich,
• Krzysztof Maćkosz,
• Chinmai S. Jureddy,
• Aleksei Tsarapkin and
• Ivo Utke

Beilstein J. Nanotechnol. 2024, 15, 1117–1124, doi:10.3762/bjnano.15.90

• precursors were cleaned after each use. The cleaning involved mechanical wiping using acetone-wetted tissues, followed by a sequence of sonification in acetone and ethanol, and dry-blowing with nitrogen. Depositions were carried out on silicon with native oxide. The silicon substrates were cleaned using a

• a flat silicon substrate matching our deposition conditions. The density of SE and BSE decreases exponentially with increasing distance to the central beam and extends to roughly 2 µm, which corresponds to the halo region 1 (H1 and H1’) observed in Figure 1a. The fact that halo region 2 extends

• magnification were adapted to match the high-resolution SEM (HRSEM) image above. The deposit structure turned out to be extremely non-uniform with a continuous layer of elemental silver at the interface between deposit and silicon substrate (cf. Supporting Information File 1, Figure S4, for more details on the

Signal generation in dynamic interferometric displacement detection

• Knarik Khachatryan,
• Simon Anter,
• Michael Reichling and
• Alexander von Schmidsfeld

Beilstein J. Nanotechnol. 2024, 15, 1070–1076, doi:10.3762/bjnano.15.87

• a Michelson interferometer. Experiments reported here are performed with the dielectric/vacuum interface of the bare fiber end acting as the first mirror and a metal-coated silicon cantilever as the second mirror. We keep the fiber–cantilever distance d always large enough to work in the Michelson

• = 0.81) aluminum-coated silicon microcantilever (type PPP-NCLR, NanoWorld AG, Neuchâtel, Switzerland) having dimensions of (225 ± 10) μm × (38 ± 8) μm × (7 ± 1) μm according to the specification of the manufacture. Using our standard procedure [15], we determined the eigenfrequency as f0 = 169.67622 kHz

Effect of wavelength and liquid on formation of Ag, Au, Ag/Au nanoparticles via picosecond laser ablation and SERS-based detection of DMMP

• Sree Satya Bharati Moram,
• Chandu Byram and
• Venugopal Rao Soma

Beilstein J. Nanotechnol. 2024, 15, 1054–1069, doi:10.3762/bjnano.15.86

• , and biomaterials for constructing flexible SERS substrates, owing to their numerous advantages over traditional options such as glass and silicon [31][32][33][34][35][36][37][38][39]. Detecting hazardous molecules, such as pesticides, explosives, and chemical threats (nerve agents) using flexible SERS

• detection of DMMP (1.2 ppm V) in the vapor phase using Glass_Ag_Au NPs, 3D fractal microstructure substrates developed by corner lithography and anisotropic wet etching of silicon using the 785 nm as the Raman excitation. When UV excitation was utilized during the measurements, the Raman peak intensities

Interface properties of nanostructured carbon-coated biological implants: an overview

• Mattia Bartoli,
• Francesca Cardano,
• Erik Piatti,
• Stefania Lettieri,
• Andrea Fin and
• Alberto Tagliaferro

Beilstein J. Nanotechnol. 2024, 15, 1041–1053, doi:10.3762/bjnano.15.85

• ., camphor and cyclohexanol) on various substrates, ranging from uncoated silicon to simple glass, to yield carpets of vertically aligned CNTs. Nevertheless, a purification stage for removing the catalyst is mandatory for avoiding side effects in biological environments [82][83]. The choice of the catalyst

Bolometric IR photoresponse based on a 3D micro-nano integrated CNT architecture

• Yasameen Al-Mafrachi,
• Sandeep Yadav,
• Sascha Preu,
• Jörg J. Schneider and
• Oktay Yilmazoglu

Beilstein J. Nanotechnol. 2024, 15, 1030–1040, doi:10.3762/bjnano.15.84

• . Simultaneously, emphasis will be placed on the effective conversion of heat into electrical signal, which is the most critical effect contributing to the overall success of non-cryogenic IR microbolometer and thermal detector design [11]. Experimental The process started with cleaning a silicon substrate with a

• 600 nm thick thermally oxidized SiO2 layer. The wafer was p-type and lightly boron-doped (Si-Mat, Silicon Materials). The substrate was thoroughly cleaned to remove impurities and contaminants to provide an ideal condition for CNT growth. Subsequently, an essential 30 nm aluminum oxide (AlOx) layer

• VACNTs (water-assisted CVD on silicon substrates with ethylene as the carbon source) has been investigated by [3]. They showed that vertically aligned SWCNTs can absorb light almost perfectly with a reflectance of 0.01–0.02 over a very wide spectral range (0.2–200 μm). The UV-to-mid-IR absorption

Recent progress on field-effect transistor-based biosensors: device perspective

• Billel Smaani,
• Fares Nafa,
• Mohamed Salah Benlatrech,
• Ismahan Mahdi,
• Hamza Akroum,
• Mohamed walid Azizi,
• Khaled Harrar and
• Sayan Kanungo

Beilstein J. Nanotechnol. 2024, 15, 977–994, doi:10.3762/bjnano.15.80

• ]. Figure 5 shows the 2D representation of the structure of a silicon HG NT JL FET-based biosensor. In this case, the full architecture of a nanotube FET has been used to design high performance biosensors. There are two types of gate cavity: the inner gate cavity and the outer gate cavity, as shown in

• FET)-based biosensor. Figure 6 shows the 2D representation of silicon VS NS FET-based biosensor designed on a buried oxide (BOX). In this structure, three similar nanocavity regions were created between the three channels and the metal gate to immobilize targeted biomolecules, as shown in Figure 6

• . Figure 7 shows the 3D representation of an SRG JL FET-based biosensor. One type of doping concentration was added to the silicon channel, source, and drain region. A surrounding cavity was created between the oxide and the gate metal. This structure utilizes a silicon-based substrate with SiO2 as an

Electrospun nanofibers: building blocks for the repair of bone tissue

• Tuğrul Mert Serim,
• Gülin Amasya,
• Tuğba Eren-Böncü,
• Ceyda Tuba Şengel-Türk and
• Ayşe Nurten Özdemir

Beilstein J. Nanotechnol. 2024, 15, 941–953, doi:10.3762/bjnano.15.77

• -based nanofiber scaffolds for tissue regeneration (Stellenbosch Nanofiber Company, South Africa) [45]. ReBOSSIS consists of β-tricalcium phosphate, PLGA, and silicon-doped calcium carbonate to support bone formation. ReBOSSIS electrospun fibers are distinguished from other market products by a cotton

Water-assisted purification during electron beam-induced deposition of platinum and gold

• Cristiano Glessi,
• Fabian A. Polman and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2024, 15, 884–896, doi:10.3762/bjnano.15.73

• after loading the sample, the chamber was plasma-cleaned with an XEI Scientific Evactron decontaminator for 30 min, at 0.4 Torr (air leak) and a forward radio frequency power of 12 W. Silicon substrates were obtained from a 525 ± 25 µm p-type silicon wafer (resistivity of 1–5 Ω·cm, (100) crystal

• orientation) with a native silicon oxide layer. Samples of 1 × 1 cm2 were used, on to which an array of annular patterns was lithographically defined, by laser lithography and etching using an SF6–O2 dry-etch, to facilitate location of the deposition areas. The substrates were roughly cleaned in acetone and

• both deposition and etching, resulting in partially purified material within the BSE range. In this case, with the injection of the water precursor only, cleaning of the silicon substrate is the only process observed. At a larger number of passes (5000–10000), a change in the morphology of the

Intermixing of MoS₂ and WS₂ photocatalysts toward methylene blue photodegradation

• Maryam Al Qaydi,
• Nitul S. Rajput,
• Michael Lejeune,
• Abdellatif Bouchalkha,
• Mimoun El Marssi,
• Steevy Cordette,
• Chaouki Kasmi and
• Mustapha Jouiad

Beilstein J. Nanotechnol. 2024, 15, 817–829, doi:10.3762/bjnano.15.68

• additional peaks observed in all XRD diagrams at ≈37° and ≈69° positions are due to the silicon substrate. The X-ray photoelectron spectroscopy (XPS) survey scans and high-resolution scans for all samples are presented in Figure 3a–j. All XPS analyses were first calibrated using the C 1s peak of carbon at

Exploring surface charge dynamics: implications for AFM height measurements in 2D materials

• Mario Navarro-Rodriguez,
• Andres M. Somoza and
• Elisa Palacios-Lidon

Beilstein J. Nanotechnol. 2024, 15, 767–780, doi:10.3762/bjnano.15.64

• and/or rGO in Milli-Q type-I water (MQ water) were utilized. A drop of these dispersions was cast onto highly doped p-type silicon (1–10 Ω·cm, Siltronix) with a 300 nm SiO2 layer thermally grown on top. Before deposition, the substrate underwent a thorough cleaning process, which involved rinsing with

• modulation mode (FM-KPFM) with an AC voltage of 700 mV at 7 kHz using platinum-coated silicon tips (Olympus AC240TM-R3, k = 2 N/m and f0 = 70 kHz). Using a dual lock-in amplifier (Zurich instruments, HF2LI), in addition to the KPFM channel, which provides information on the sample's SP, the 2ωelec

Effect of repeating hydrothermal growth processes and rapid thermal annealing on CuO thin film properties

• Monika Ozga,
• Eunika Zielony,
• Aleksandra Wierzbicka,
• Anna Wolska,
• Marcin Klepka,
• Marek Godlewski,
• Bogdan J. Kowalski and
• Bartłomiej S. Witkowski

Beilstein J. Nanotechnol. 2024, 15, 743–754, doi:10.3762/bjnano.15.62

• silicon (100) substrates (Siegert Wafer). These substrates were covered with a nucleation layer in the form of gold nanoislands sputtered using a turbomolecular-pumped coater Quorum Q150T ES. CuO films were obtained according to the following procedure. First, an aqueous solution of copper(II) acetate

• characterized using an analytical scanning electron microscope (SEM) Hitachi SU-70 with the X-ray microanalysis system (EDX) enabling composition analysis (Thermo Fisher Pathfinder system with a silicon drift detector). Additionally, in the study, a scanning probe microscope (Dimension Icon, Bruker) was used

• silicon nitride probe, ScanAsyst-AIR (Bruker). Scanning capacitance microscopy (SCM) measurements were conducted in contact mode using a silicon probe coated with a PtIr layer, SCM-PIT-V2 (Bruker). Capacitance measurements were taken with VAC = 2 V and VDC = 1 V applied. The carrier distribution maps at a

Level set simulation of focused ion beam sputtering of a multilayer substrate

• Alexander V. Rumyantsev,
• Nikolai I. Borgardt,
• Roman L. Volkov and
• Yuri A. Chaplygin

Beilstein J. Nanotechnol. 2024, 15, 733–742, doi:10.3762/bjnano.15.61

• processing was simulated using the level set method and experimentally studied by milling a silicon dioxide layer covering a crystalline silicon substrate. The simulation took into account the redeposition of atoms simultaneously sputtered from both layers of the sample as well as the influence of

• ; multilayer substrate; silicon; silicon dioxide; sputtering; Introduction The focused ion beam (FIB) technique is an effective method for surface nanostructuring. It is based on the local removal of material by sputtering with a narrow beam of, typically, gallium ions. This feature of the FIB method makes it

• -based [21], level set [22][23][24], and Monte Carlo [25] methods. The most commonly studied materials are monocrystalline silicon [21][22][23] and amorphous silicon dioxide [24][25] because of their technological importance in microelectronics. More complex simulations of multilayer milling, which need

Reduced subthreshold swing in a vertical tunnel FET using a low-work-function live metal strip and a low-k material at the drain

• Kalai Selvi Kanagarajan and
• Dhanalakshmi Krishnan Sadhasivan

Beilstein J. Nanotechnol. 2024, 15, 713–718, doi:10.3762/bjnano.15.59

• to reduce gate oxide leakage are high-k materials. The device’s ability to keep a charge is increased by using high-k materials, which also aids in downsizing. HfO2 is compatible with a silicon substrate and possesses a high dielectric constant (ε ≈ 25), a large bandgap (5.68 eV), band offsets with

• silicon, a low leakage current, and a lattice parameter that is close to that of silicon with a modest lattice misfit (ca. 5%) [11]. In this paper, a published VTFET structure is taken for comparison [12]. A large tunnel area and a thin channel enhance the device metrics [13]. In contrast to the