Beyond biomimicry – next generation applications of bioinspired adhesives from microfluidics to composites

• Dan Sameoto

Beilstein J. Nanotechnol. 2024, 15, 965–976, doi:10.3762/bjnano.15.79

• independent fibers, it can have an effective Ec that is close to zero when in the unadhered state and will, therefore, minimally affect bending stiffness in comparison to two independent thin films of Ef. For the simplified model shown in Figure 8, if Ec ≪ Ef and t ≪ d, then the overall bending stiffness

Effect of repeating hydrothermal growth processes and rapid thermal annealing on CuO thin film properties

• Monika Ozga,
• Eunika Zielony,
• Aleksandra Wierzbicka,
• Anna Wolska,
• Marcin Klepka,
• Marek Godlewski,
• Bogdan J. Kowalski and
• Bartłomiej S. Witkowski

Beilstein J. Nanotechnol. 2024, 15, 743–754, doi:10.3762/bjnano.15.62

• and Technology, Wybrzeze Wyspiańskiego 27, 50–370 Wroclaw, Poland 10.3762/bjnano.15.62 Abstract This paper presents an investigation into the influence of repeating cycles of hydrothermal growth processes and rapid thermal annealing (HT+RTA) on the properties of CuO thin films. An innovative

• , scanning capacitance microscopy measurements provided information on the changes in the local carrier concentration with each repetition. These studies indicate the increased usefulness of CuO thin films obtained from the HT+RTA procedure, which expands the possibilities of their applications in electronic

• devices. Keywords: CuO; hydrothermal method; rapid thermal annealing; thin films; Introduction Copper(II) oxide is a p-type semiconductor possessing a narrow bandgap, along with many beneficial electrical, optical, and magnetic properties. Particularly at the nanoscale, these properties set themselves

Elastic modulus of β-Ga₂O₃ nanowires measured by resonance and three-point bending techniques

• Annamarija Trausa,
• Sven Oras,
• Sergei Vlassov,
• Mikk Antsov,
• Tauno Tiirats,
• Andreas Kyritsakis,
• Boris Polyakov and
• Edgars Butanovs

Beilstein J. Nanotechnol. 2024, 15, 704–712, doi:10.3762/bjnano.15.58

• , University of Tartu, Nooruse 1, 50411 Tartu, Estonia Estonian Military Academy, Riia 12, 51010 Tartu, Estonia 10.3762/bjnano.15.58 Abstract Due to the recent interest in ultrawide bandgap β-Ga2O3 thin films and nanostructures for various electronics and UV device applications, it is important to understand

AFM-IR investigation of thin PECVD SiO_x films on a polypropylene substrate in the surface-sensitive mode

• Hendrik Müller,
• Hartmut Stadler,
• Teresa de los Arcos,
• Adrian Keller and
• Guido Grundmeier

Beilstein J. Nanotechnol. 2024, 15, 603–611, doi:10.3762/bjnano.15.51

• the different measurement methods (i.e., contact mode and surface-sensitive mode) with respect to the chemical surface sensitivity. The use of the surface-sensitive mode in AFM-IR shows an enormous improvement for the analysis of thin films on the IR-active substrate. As a result, in this mode, the

• signal of the substrate material could be significantly reduced. Even layers that are so thin that they could hardly be measured in the contact mode can be analyzed with the surface-sensitive mode. Keywords: AFM-IR; polypropylene; surface-sensitive mode; silicon oxide; thin films; XPS; Introduction

• –sample force generated by the thermal expansion of the total excited volume is detected. This makes it very challenging to characterize thin films with a small thermal expansion coefficient (e.g., inorganic oxides) deposited on bulk materials with a large thermal expansion coefficient (e.g., polymers

On the mechanism of piezoresistance in nanocrystalline graphite

• Sandeep Kumar,
• Simone Dehm and
• Ralph Krupke

Beilstein J. Nanotechnol. 2024, 15, 376–384, doi:10.3762/bjnano.15.34

• density of defects in the form of grain boundaries. It holds an advantage over graphene in easily achieving wafer-scale growth with controlled thickness. In this study, we explore the piezoresistivity in thin films of nanocrystalline graphite. Simultaneous measurements of sheet resistance and externally

Controllable physicochemical properties of WO_x thin films grown under glancing angle

• Rupam Mandal,
• Aparajita Mandal,
• Alapan Dutta,
• Rengasamy Sivakumar,
• Sanjeev Kumar Srivastava and
• Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

• , Alagappa University, Karaikudi 630 003, India Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur 721 302, India 10.3762/bjnano.15.31 Abstract In this work, various physicochemical properties are investigated in nanostructured WOx thin films prepared by radio-frequency magnetron

• identified to regulate the rectification ratio values at the WOx/p-Si heterostructures and increase in series resistance within the bulk of the films. The present study provides valuable insights to correlate optical, electrical, and structural properties of WOx thin films, which will be beneficial for

• . In this regard, radio frequency (rf) sputter deposition is one of the preferred choices as an industry-compatible method to grow WOx thin films [2][19][20][21]. Apart from thin films, nanostructured metal oxides generally possess superior electrochemical properties compared to their bulk counterparts

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS₂ thin films with domains much smaller than the laser spot size

• Felipe Wasem Klein,
• Jean-Roch Huntzinger,
• Vincent Astié,
• Damien Voiry,
• Romain Parret,
• Houssine Makhlouf,
• Sandrine Juillaguet,
• Jean-Manuel Decams,
• Sylvie Contreras,
• Périne Landois,
• Ahmed-Azmi Zahab,
• Jean-Louis Sauvajol and
• Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

• Raman spectroscopy is a widely used technique to characterize nanomaterials because of its convenience, non-destructiveness, and sensitivity to materials change. The primary purpose of this work is to determine via Raman spectroscopy the average thickness of MoS2 thin films synthesized by direct liquid

• growth of wafer-scale MoS2 thin films on SiO2/Si substrates by direct liquid injection pulsed-pressure chemical vapor deposition (DLI-PP-CVD) using low-toxicity precursors [27]. Such MoS2 thin films showed good stoichiometry (Mo/S = 1.94–1.95) and the potential for high photoluminescence quantum yield

• develop and validate an approach for determining the average thickness of such sub-laser spot size inhomogeneous MoS2 thin films using Raman spectroscopy. First, we reassess here as a ground work the information that can be derived from the Raman spectra of MoS2 flakes for the evaluation of their

Ultrasensitive and ultrastretchable metal crack strain sensor based on helical polydimethylsiloxane

• Shangbi Chen,
• Dewen Liu,
• Weiwei Chen,
• Huajiang Chen,
• Jiawei Li and
• Jinfang Wang

Beilstein J. Nanotechnol. 2024, 15, 270–278, doi:10.3762/bjnano.15.25

• was exerted on the surface of the Au film at a rate of 10% strain per second, resulting in the initiation and propagation of cracks. Following the release of the pre-stretch, the Au thin films were affixed to silver wires using silver paste at both ends. Ultimately, the surface of the helix was coated

Design, fabrication, and characterization of kinetic-inductive force sensors for scanning probe applications

• August K. Roos,
• Ermes Scarano,
• Elisabet K. Arvidsson,
• Erik Holmgren and
• David B. Haviland

Beilstein J. Nanotechnol. 2024, 15, 242–255, doi:10.3762/bjnano.15.23

• larger than the geometric (electromagnetic) inductance in thin films and nanowires made of amorphous superconductors [16]. It is, therefore, useful in applications that require compact microwave resonators with low loss [17], including microwave filters [18] and resonant radiation detectors [19]. Large

Ion beam processing of DNA origami nanostructures

• Leo Sala,
• Agnes Zerolová,
• Violaine Vizcaino,
• Alain Mery,
• Alicja Domaracka,
• Hermann Rothard,
• Philippe Boduch,
• Dominik Pinkas and
• Jaroslav Kocišek

Beilstein J. Nanotechnol. 2024, 15, 207–214, doi:10.3762/bjnano.15.20

• the direction of the primary ion’s initial momentum. Hillock structures are usually formed upon such interaction with single-crystal materials [19], while craters and particle tracks form on polymeric thin films such as PMMA [20][21]. The dimensions of such features can be influenced by the interplay

CdSe/ZnS quantum dots as a booster in the active layer of distributed ternary organic photovoltaics

• Gabriela Lewińska,
• Piotr Jeleń,
• Zofia Kucia,
• Maciej Sitarz,
• Łukasz Walczak,
• Bartłomiej Szafraniak,
• Jerzy Sanetra and
• Konstanty W. Marszalek

Beilstein J. Nanotechnol. 2024, 15, 144–156, doi:10.3762/bjnano.15.14

• relations of refractive indices and extinction coefficient were investigated. The morphologies of the thin films were studied with atomic force microscopy. The chemical boundaries of the ternary layers were determined by Raman spectroscopy. Based on UPS studies, the energy diagram of the potential devices

• –COOH groups, they can be easily labeled for chemical and biological applications. Low-molecular-weight organic molecules coat highly luminescent semiconductor nanocrystals. Materials and Methods Thin films, the intended active layers, were fabricated using the spin-coating method. The layers were a

• coefficient and shifts the maximum toward short wavelengths for the refractive index. Refractive indices and extinction coefficient parameters for investigated quantum dots thin films are summarized in Table 2. In ternary systems, a shift of the extinction coefficient maximum toward lower energies can be

In situ optical sub-wavelength thickness control of porous anodic aluminum oxide

• Aleksandrs Dutovs,
• Raimonds Popļausks,
• Oskars Putāns,
• Vladislavs Perkanuks,
• Aušrinė Jurkevičiūtė,
• Tomas Tamulevičius,
• Uldis Malinovskis,
• Iryna Olyshevets,
• Donats Erts and
• Juris Prikulis

Beilstein J. Nanotechnol. 2024, 15, 126–133, doi:10.3762/bjnano.15.12

• microscopy and is particularly valuable for the small-scale production of PAAO-based functional optical coatings. Keywords: electrochemistry; ellipsometry; porous anodic alumina; spectroscopy; thin films; Introduction Porous anodic aluminum oxide (PAAO) is a versatile self-organized material with

Measurements of dichroic bow-tie antenna arrays with integrated cold-electron bolometers using YBCO oscillators

• Leonid S. Revin,
• Dmitry A. Pimanov,
• Alexander V. Chiginev,
• Anton V. Blagodatkin,
• Viktor O. Zbrozhek,
• Andrey V. Samartsev,
• Anastasia N. Orlova,
• Dmitry V. Masterov,
• Alexey E. Parafin,
• Victoria Yu. Safonova,
• Anna V. Gordeeva,
• Andrey L. Pankratov,
• Leonid S. Kuzmin,
• Anatolie S. Sidorenko,
• Silvia Masi and
• Paolo de Bernardis

Beilstein J. Nanotechnol. 2024, 15, 26–36, doi:10.3762/bjnano.15.3

• based on high-temperature YBCO Josephson junctions [27][28][29]. Long junctions based on YBCO thin films were fabricated by the preliminary topology mask method [30][31]. Specifically, YBCO film was deposited on a 24° [001]-tilt Zr1−xYxO2 bicrystal substrate by magnetron sputtering with preliminary

Density functional theory study of Au-fcc/Ge and Au-hcp/Ge interfaces

• Olga Sikora,
• Małgorzata Sternik,
• Benedykt R. Jany,
• Franciszek Krok,
• Przemysław Piekarz and
• Andrzej M. Oleś

Beilstein J. Nanotechnol. 2023, 14, 1093–1105, doi:10.3762/bjnano.14.90

• interlayer distance compared to variant T2. The Ge–Au bond lengths obtained for the T1 structure, 2.50 Å, are in good agreement with the experimental values for amorphous GeAu alloys, 2.66 Å, [33] and thin films of Au covering a Ge(111) surface, 2.5 Å, [34]. In variant T2 the Au–Ge distance between Au atoms

Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone

• Kristjan Kalam,
• Peeter Ritslaid,
• Tanel Käämbre,
• Aile Tamm and
• Kaupo Kukli

Beilstein J. Nanotechnol. 2023, 14, 1085–1092, doi:10.3762/bjnano.14.89

• Kristjan Kalam Peeter Ritslaid Tanel Kaambre Aile Tamm Kaupo Kukli Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia 10.3762/bjnano.14.89 Abstract Polycrystalline SnO2 thin films were grown by atomic layer deposition (ALD) on SiO2/Si(100) substrates from SnI4 and O3

• from a film deposited at 300 °C is presented in Figure 9. The refractive index values in the range of 2.04–2.06 can be regarded as appreciably high for SnO2 thin films. Refractive index values of approx. 2.0 were measured by ellipsometry for SnO2 films grown by ALD from bis(1-dimethylamino-2-methyl-2

• outmost surface of the film. Conclusion SnO2 thin films were deposited from SnI4 and O3 via ALD in the temperature range of 100–600 °C. The resulting films formed in the crystalline tetragonal phase of SnO2 when the deposition temperature was over 225 °C, and the proportion of crystallised material in the

Dual-heterodyne Kelvin probe force microscopy

• Benjamin Grévin,
• Fatima Husainy,
• Dmitry Aldakov and
• Cyril Aumaître

Beilstein J. Nanotechnol. 2023, 14, 1068–1084, doi:10.3762/bjnano.14.88

• latter configuration is used in the case of organic BHJ thin films (processed on transparent substrates, i.e., glass coated with indium thin oxide). The light intensity is adjusted using the laser power control and optical density filters. In the following, for each measurement, the optical power Popt

• again confirm the (positive) SPV polarity. To conclude this part of the work, it is important to check whether the data obtained for this PTB7:PC71BM sample are consistent with the results of our previous investigations on BHJ thin films based on the same donor–acceptor tandem. Considering only the SPV

Spatial mapping of photovoltage and light-induced displacement of on-chip coupled piezo/photodiodes by Kelvin probe force microscopy under modulated illumination

• Zeinab Eftekhari,
• Nasim Rezaei,
• Hidde Stokkel,
• Jian-Yao Zheng,
• Andrea Cerreta,
• Ilka Hermes,
• Minh Nguyen,
• Guus Rijnders and
• Rebecca Saive

Beilstein J. Nanotechnol. 2023, 14, 1059–1067, doi:10.3762/bjnano.14.87

• effect of gravity on the displacement is taken into account. The voltage excitation signal is introduced to the LNO terminals as shown in the inset of Figure 2. The material properties of PZT and LNO thin films were derived from the literature and are summarized in Table 1. The strain-charge form is

N-Heterocyclic carbene-based gold etchants

• Robert B. Chevalier,
• Justin Pantano,
• Matthew K. Kiesewetter and
• Jason R. Dwyer

Beilstein J. Nanotechnol. 2023, 14, 865–871, doi:10.3762/bjnano.14.71

• but also the potential for deliberate etching, with the outcome determined by choice of chemically synthesized organic species and solvent. Keywords: gold etchant; microfabrication; N-heterocyclic carbenes; self-assembled monolayer (SAM); thin films; Introduction Self-assembled monolayers (SAMs) are

• reported the use of a benzimidazolium gold complex in dichloromethane (DCM) that readily functionalizes gold nanoparticles (AuNPs) in aqueous solution [15][19]. In our work using solution-based approaches to form NHC monolayers on gold thin films, we observed a loss of gold from our substrates. It is

• after only 30 min, that was at a substantially higher concentration of 2 in THF. In terms of generalizability, though, we are able to clearly show that etching of gold occurs from both thin films and nanoparticles, and in a single organic phase and a mixed organic and aqueous phase. Conclusion The

The microstrain-accompanied structural phase transition from h-MoO₃ to α-MoO₃ investigated by in situ X-ray diffraction

• Zeqian Zhang,
• Honglong Shi,
• Boxiang Zhuang,
• Minting Luo and
• Zhenfei Hu

Beilstein J. Nanotechnol. 2023, 14, 692–700, doi:10.3762/bjnano.14.55

• some question regarding the h-MoO3 phase: (1) The location of the intercalated molecules inside the h-MoO3 structure is unknown. (2) The reason of the mismatch in h-MoO3 thin films and the failure of microdevices is not understood. (3) The structural phase transition at the atomic scale from h-MoO3 to

• transition from h-MoO3 to α-MoO3 Anisotropic thermal expansion and first-order phase transition The coefficient of thermal expansion (CTE) is an important mechanical parameter for the application of MoO3 thin films, as it can increase the mismatch between thin films and the substrate, causing microdevices to

Nanoarchitectonics to entrap living cells in silica-based systems: encapsulations with yolk–shell and sepiolite nanomaterials

• Celia Martín-Morales,
• Jorge Fernández-Méndez,
• Pilar Aranda and
• Eduardo Ruiz-Hitzky

Beilstein J. Nanotechnol. 2023, 14, 522–534, doi:10.3762/bjnano.14.43

• to be tested as immobilization matrices of microalgae. Sepiolite–alginate beads, sepiolite–chitosan/alginate thin films, and sepiolite–chitosan foams were produced (Figure 1). Sepiolite and biopolymer concentration, synthesis temperature, and microorganism concentration were modified to study their

• precursor could be cast and gelled as thin films or hollow tubular monoliths with thin walls, improving the interaction between the encapsulated cells and a liquid medium in which the material could be placed. In addition to the optimisation of the sol–gel synthesis, the conditions for yolk–shell

The origin of black and white coloration of the Asian tiger mosquito Aedes albopictus (Diptera: Culicidae)

• Manuela Rebora,
• Gianandrea Salerno,
• Silvana Piersanti,
• Alexander Kovalev and
• Stanislav N. Gorb

Beilstein J. Nanotechnol. 2023, 14, 496–508, doi:10.3762/bjnano.14.41

• (and also the black) appearance and demonstrates the importance of multiple reflections for the appearance of the white scales (Figure 6c). Thin film interference In the microscopic areas on the scales with relatively constant cuticle thickness, the effect of interference in thin films can be observed

Plasmonic nanotechnology for photothermal applications – an evaluation

• A. R. Indhu,
• L. Keerthana and
• Gnanaprakash Dharmalingam

Beilstein J. Nanotechnol. 2023, 14, 380–419, doi:10.3762/bjnano.14.33

Formation of nanoflowers: Au and Ni silicide cores surrounded by SiO_x branches

• Feitao Li,
• Siyao Wan,
• Dong Wang and
• Peter Schaaf

Beilstein J. Nanotechnol. 2023, 14, 133–140, doi:10.3762/bjnano.14.14

• also been obtained by depositing Au thin films on Si substrates with a thick silicon dioxide (SiO2) layer and subsequent rapid heating in reducing atmosphere. Here, the Si vapor source is silicon monoxide (SiO) gas produced by the decomposition of the SiO2 layer or the active oxidation of the Si

• ][24][25]. Apart from Au, both Ni and Ag can also catalyze the growth of NWs based on the VLS mechanism [26][27][28], and Si NWs have been grown using alloyed AuAg nanoparticles [29]. Au–SiOx nanoflowers have been fabricated by combining the dewetting of Au thin films and the growth of NWs based on the

• . It has been reported after the annealing of Au thin films deposited on SiO2/Si substrates with different thicknesses of the SiO2 layer [3][4][36]. The active oxidation of Si also occurs once the Si substrate is exposed [2][3][37], which can be proved by the calculated oxygen partial pressure

Combining physical vapor deposition structuration with dealloying for the creation of a highly efficient SERS platform

• Adrien Chauvin,
• Walter Puglisi,
• Damien Thiry,
• Cristina Satriano,
• Rony Snyders and
• Carla Bittencourt

Beilstein J. Nanotechnol. 2023, 14, 83–94, doi:10.3762/bjnano.14.10

• Nanostructured noble metal thin films are highly studied for their interesting plasmonic properties. The latter can be effectively used for the detection of small and highly diluted molecules by the surface-enhanced Raman scattering (SERS) effect. Regardless of impressive detection limits achieved, synthesis

• suspension [15]. However, NPs suspensions are hard to handle, suffer from poor stability, and can hardly be reused [6]. In this perspective, major interest has been devoted to developing solid SERS platforms made of nanostructured thin films [15][16]. Among them, nanoporous materials show superior properties

• . This approach allows for the synthesis of structured alloy thin films constituted of dispersed alloy columns. The dealloying of these films was implemented in three different media (i.e., hydrochloric acid (HCl), sodium hydroxide (NaOH), and phosphoric acid (H3PO4)) to highlight their impact on the

Upper critical magnetic field in NbRe and NbReN micrometric strips

• Zahra Makhdoumi Kakhaki,
• Antonio Leo,
• Federico Chianese,
• Loredana Parlato,
• Giovanni Piero Pepe,
• Angela Nigro,
• Carla Cirillo and
• Carmine Attanasio

Beilstein J. Nanotechnol. 2023, 14, 45–51, doi:10.3762/bjnano.14.5

• rotation and relaxation studies [13] and large values of the upper critical magnetic fields [11][14], which are above the Pauli paramagnetic limit [15][16]. In the case of thin films, the structure of NbRe is polycrystalline with grains of small dimensions, typically of the order of 2–3 nm [7][8][17