Relation between thickness, crystallite size and magnetoresistance of nanostructured La_1−xSr_xMn_yO_3±δ films for magnetic field sensors

• Rasuole Lukose,
• Valentina Plausinaitiene,
• Milita Vagner,
• Nerija Zurauskiene,
• Skirmantas Kersulis,
• Virgaudas Kubilius,
• Karolis Motiejuitis,
• Birute Knasiene,
• Voitech Stankevic,
• Zita Saltyte,
• Martynas Skapas,
• Algirdas Selskis and
• Evaldas Naujalis

Beilstein J. Nanotechnol. 2019, 10, 256–261, doi:10.3762/bjnano.10.24

• ]. Transport and magnetoresistive properties In nanostructured manganite materials the difference in dimensions of crystallites and change of the relative amount of grain boundaries (GBs) and film composition significantly change the transport behaviour [17][21]. The decrease of electrical resistivity and the

• resistivity values were observed for the I series films (Figure 3b insert) due to smaller crystallites (Figure 4a,b) and larger number of GBs. The average crystallite diameter of 56 nm and 69 nm was found for the I and II series (Figure 4c), respectively. The technological processing and decrease of the

• resistivity, respectively) with film thickness was observed (Figure 4d,e). The largest MR magnitude (6%, when the field was directed parallel to the film plane B|| = 0.7 T) was obtained for the thickest films (≈400 nm) of the II series. The measured MR values of this II series films at room temperature are

Interaction of Te and Se interlayers with Ag or Au nanofilms in sandwich structures

• Arkadiusz Ciesielski,
• Lukasz Skowronski,
• Marek Trzcinski,
• Ewa Górecka,
• Wojciech Pacuski and
• Tomasz Szoplik

Beilstein J. Nanotechnol. 2019, 10, 238–246, doi:10.3762/bjnano.10.22

• spectra for samples measured two and four weeks after deposition is that for the latter, the contribution from the Drude term increases significantly, which results in higher values of Im(ε) in the long wavelength range. Since the Drude term is strictly connected to the sample resistivity, it suggests

Bidirectional biomimetic flow sensing with antiparallel and curved artificial hair sensors

• Claudio Abels,
• Antonio Qualtieri,
• Toni Lober,
• Alessandro Mariotti,
• Lily D. Chambers,
• Massimo De Vittorio,
• William M. Megill and
• Francesco Rizzi

Beilstein J. Nanotechnol. 2019, 10, 32–46, doi:10.3762/bjnano.10.4

• circuit was excited with Vexc = +3.3 V DC, while its voltage output was connected to a benchtop digital multimeter (Agilent 34405A). Influence of temperature on micro strain gauges As electrical resistivity of metals is temperature-dependent, a drift in the offset voltage may occur while the flow sensor

Zn/F-doped tin oxide nanoparticles synthesized by laser pyrolysis: structural and optical properties

• Florian Dumitrache,
• Iuliana P. Morjan,
• Elena Dutu,
• Ion Morjan,
• Claudiu Teodor Fleaca,
• Monica Scarisoreanu,
• Alina Ilie,
• Marius Dumitru,
• Cristian Mihailescu,
• Adriana Smarandache and
• Gabriel Prodan

Beilstein J. Nanotechnol. 2019, 10, 9–21, doi:10.3762/bjnano.10.2

• estimated 4.18 eV bandgap value [24]. Also, the 1 atom % Nd-doped FTO film obtained by spray pyrolysis at 500 °C presented the lowest sheet resistance and resistivity values, which was accompanied by a 4.15 eV bandgap – a value 4.21 eV lower than that of FTO obtained under similar conditions. Also, in this

• resistivity at room temperature is on the order of tens to hundreds of Ω·cm. These electrical values are in agreement with those reported in literature considering that the resulting films have a low particle packing density (SnO2 bulk density is 7.0 g/cm3). Zn-doped SnO2 films have resistivity values

• rutile phase of SnO2. It has been demonstrated that by the increasing the fluorine concentration, the A1g position shift toward lower wavenumbers and the B2g band area grows about 100 times. The optimum resistivity of the co-doped SnO2 films is 57.54 Ω·cm for a ZnEt2 to SnMe4 flow ratio of 0.1. In order

Site-controlled formation of single Si nanocrystals in a buried SiO₂ matrix using ion beam mixing

• Xiaomo Xu,
• Thomas Prüfer,
• Daniel Wolf,
• Hans-Jürgen Engelmann,
• Lothar Bischoff,
• René Hübner,
• Karl-Heinz Heinig,
• Wolfhard Möller,
• Stefan Facsko,
• Johannes von Borany and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2018, 9, 2883–2892, doi:10.3762/bjnano.9.267

• are based on p-doped Si wafers with a specific resistivity of 10 Ω cm. The buried SiO2 layer was grown via thermal oxidation at 1123 K in dry O2 atmosphere in a furnace followed by RF-sputtering of an amorphous Si layer. The thickness of the oxide layer was measured by spectroscopic ellipsometry in

Contactless photomagnetoelectric investigations of 2D semiconductors

• Marian Nowak,
• Marcin Jesionek,
• Barbara Solecka,
• Piotr Szperlich,
• Piotr Duka and
• Anna Starczewska

Beilstein J. Nanotechnol. 2018, 9, 2741–2749, doi:10.3762/bjnano.9.256

• the Van der Pauw method. For these measurements of resistivity and the Hall coefficient, the samples were equipped with 150 nm thick Au electrodes deposited using a Q150R ES rotary-pumped sputter coater with a film thickness monitor. For the PME-Corbino investigations of graphene with

Optimization of Mo/Cr bilayer back contacts for thin-film solar cells

• Nima Khoshsirat,
• Fawad Ali,
• Vincent Tiing Tiong,
• Mojtaba Amjadipour,
• Hongxia Wang,
• Mahnaz Shafiei and
• Nunzio Motta

Beilstein J. Nanotechnol. 2018, 9, 2700–2707, doi:10.3762/bjnano.9.252

• different deposition powers and working pressures. Good adhesion to the SLG substrate has been achieved by means of an ultra-thin Cr layer under the Mo layer. By optimizing the deposition conditions we achieved low surface roughness, high optical reflectance and low sheet resistivity while we could decrease

• elements, Mo is reported to have a relatively better stability at the elevated temperatures required for the fabrication of CIGS and CZTS, better ohmic contact behavior, lower resistivity and a higher work function than the CIGS and CZTS light-absorbing semiconductor layers. However, the most challenging

• layer [10][11][12][13]. This involves the deposition of a thick Mo layer with low resistivity at low pressure and high sputtering power on a thin Mo layer deposited at high pressure and low power providing the required adhesion to the substrate. However, this method still does not guarantee the adhesion

High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb)_1−x(MnSb)_x alloy

• Leonid N. Oveshnikov,
• Elena I. Nekhaeva,
• Alexey V. Kochura,
• Alexander B. Davydov,
• Mikhail A. Shakhov,
• Sergey F. Marenkin,
• Oleg A. Novodvorskii,
• Alexander P. Kuzmenko,
• Alexander L. Vasiliev,
• Boris A. Aronzon and
• Erkki Lahderanta

Beilstein J. Nanotechnol. 2018, 9, 2457–2465, doi:10.3762/bjnano.9.230

• mobility values have no pronounced dependence on the carrier concentration (see Table 1), i.e., the conductivity of the studied films is affected by various factors. Thus, magnetotransport phenomena can yield additional information about the system. The results of Hall resistivity measurements for the GM3

• sample are shown in Figure 3a and Figure 3b. The Hall resistivity in magnetic systems can be divided into two parts: where RH is the Hall constant, used for the determination of Np and μ (see Table 1), and Rs is the anomalous Hall constant, which is defined by several parameters of the system [22]. Thus

• , the Rxy(H) should reproduce the field dependence of the magnetization. As shown in Figure 3a, Rs·M(H) (the Hall resistivity after subtraction of the linear contribution) demonstrates hysteresis behavior (see inset) with Hc ≈ 140 Oe and a saturation field value of Hsat ≈ 3.8 kOe. This is in a good

Thickness-dependent photoelectrochemical properties of a semitransparent Co₃O₄ photocathode

• Malkeshkumar Patel and
• Joondong Kim

Beilstein J. Nanotechnol. 2018, 9, 2432–2442, doi:10.3762/bjnano.9.228

• regarding low-cost and reliable PEC cells [1][2][3][4][5][6][7][8]. For a widespread application of PEC cells, the photoelectrodes need to fulfill the criteria of (i) a low band gap (1.7–2.2 eV), (ii) low resistivity, (iii) low cost, (iv) corrosion stability and (v) a correct alignment of band edges with

Hydrothermal-derived carbon as a stabilizing matrix for improved cycling performance of silicon-based anodes for lithium-ion full cells

• Mirco Ruttert,
• Florian Holtstiege,
• Jessica Hüsker,
• Markus Börner,
• Martin Winter and
• Tobias Placke

Beilstein J. Nanotechnol. 2018, 9, 2381–2395, doi:10.3762/bjnano.9.223

• contribute to a decreasing capacity with each cycle, either due to consumption of active Li, trapping of Li in disconnected Si or a growing resistivity [17][21][22][23][24][25]. With the aim to tackle these problems and to obtain Si anodes with a stable cycling performance at high capacity, several promising

Magnetism and magnetoresistance of single Ni–Cu alloy nanowires

• Andreea Costas,
• Camelia Florica,
• Elena Matei,
• Maria Eugenia Toimil-Molares,
• Ionel Stavarache,
• Andrei Kuncser,
• Victor Kuncser and
• Ionut Enculescu

Beilstein J. Nanotechnol. 2018, 9, 2345–2355, doi:10.3762/bjnano.9.219

• by McGuire and Potter in 1975 [28]. Accordingly, in a magnetic monodomain system, the resistivity depends on the orientation of the spontaneous magnetization with respect to the current density. If θ is the angle between the magnetization and the current, the resistivity ρ(θ), can be expressed as: It

• is evident that if the field is perpendicular to the direction of the current (cos2 θ = 0), a perpendicular resistivity is measured, , whereas if the field is parallel to the current direction (cos2 θ = 1), a parallel resistivity is measured, , with . In a magnetic monodomain with uniaxial anisotropy

• spontaneous magnetization. When the current flows also along the EA, a sharp reversal of the localized magnetic moments from the current direction (θ = 0°) to the opposite direction (θ = 180°) has no influence on the resistivity (cos2 θ = 1) and hence the parallel resistivity, , should remain constant with

The role of adatoms in chloride-activated colloidal silver nanoparticles for surface-enhanced Raman scattering enhancement

• Nicolae Leopold,
• Andrei Stefancu,
• Krisztian Herman,
• István Sz. Tódor,
• Stefania D. Iancu,
• Vlad Moisoiu and
• Loredana F. Leopold

Beilstein J. Nanotechnol. 2018, 9, 2236–2247, doi:10.3762/bjnano.9.208

• . Ph. Eur., Merck), 9-aminoacridine hydrochloride monohydrate (for synthesis, Merck) and rhodamine 6G (99%, Sigma-Aldrich) were dissolved in ultrapure water (Direct-Q 3 UV, Millipore, resistivity higher than 18 MΩ). Synthesis of silver colloids The synthesis of all silver colloids used in this study is

Lead-free hybrid perovskites for photovoltaics

• Oleksandr Stroyuk

Beilstein J. Nanotechnol. 2018, 9, 2209–2235, doi:10.3762/bjnano.9.207

• preferable to sub-micrometer HP domains. Typically, the MABI-based solar cells demonstrate a high resistivity to air oxidation and ambient humidity [85][155][156][157][160][168]. Similar high stability to the degradation under ambient atmosphere was reported for highly luminescent Cs3Bi2X9 (X = Cl, Br, I

Filling nanopipettes with apertures smaller than 50 nm: dynamic microdistillation

• Evelyne Salançon and
• Bernard Tinland

Beilstein J. Nanotechnol. 2018, 9, 2181–2187, doi:10.3762/bjnano.9.204

• . Results and Discussion Quartz capillaries, being of pure silica, have certain intrinsic properties (low dielectric constant, low loss factor, high volume resistivity, strength and chemical purity) that make them appropriate for the reproducible electrical measurements described below. Notably, they

Electrospun one-dimensional nanostructures: a new horizon for gas sensing materials

• Muhammad Imran,
• Nunzio Motta and
• Mahnaz Shafiei

Beilstein J. Nanotechnol. 2018, 9, 2128–2170, doi:10.3762/bjnano.9.202

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

• Noel Kennedy,
• Ray Duffy,
• Luke Eaton,
• Dan O’Connell,
• Scott Monaghan,
• Shane Garvey,
• James Connolly,
• Chris Hatem,
• Justin D. Holmes and
• Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

• being deemed detrimental to current and future device production. Semiconductor substrates require doping to reduce their resistivity and enable their use in electronic devices such as metal-oxide semiconductor field-effect transistors (MOSFETs). Traditionally, ex situ doping was carried out using ion

• wet-chemistry functionalization due to the precise dimensions needed for analysis. The Hall measurement system applies current and magnetic field and measures voltages and resistances. It then infers mobility and carrier properties from these measurements. The sheet resistivity (ρs) is directly

• deal with many material systems that have low mobility, high resistivity and low carrier concentrations. As well as Hall effect measurements, the HMS also performs checks for ohmic behaviour and four-point resistivity measurements, and combines all-current/field-reversal techniques, optimisation

Localized photodeposition of catalysts using nanophotonic resonances in silicon photocathodes

• Evgenia Kontoleta,
• Sven H. C. Askes,
• Lai-Hung Lai and
• Erik C. Garnett

Beilstein J. Nanotechnol. 2018, 9, 2097–2105, doi:10.3762/bjnano.9.198

• surrounding medium was set to 1.33. The mesh size in the FDTD simulations was equal to 2 × 2 × 2 nm for all the structures. Fabrication of silicon nanostructures Silicon p-type samples (Active Business Company GmbH, <100> orientation ) 12 × 12 mm, with 1–10 Ω·cm resistivity, were used as substrates for the

Electromigrated electrical optical antennas for transducing electrons and photons at the nanoscale

• Arindam Dasgupta,
• Mickaël Buret,
• Nicolas Cazier,
• Marie-Maxime Mennemanteuil,
• Reinaldo Chacon,
• Kamal Hammani,
• Jean-Claude Weeber,
• Juan Arocas,
• Laurent Markey,
• Gérard Colas des Francs,
• Alexander Uskov,
• Igor Smetanin and
• Alexandre Bouhelier

Beilstein J. Nanotechnol. 2018, 9, 1964–1976, doi:10.3762/bjnano.9.187

• fairly constant because Joule dissipation is not yet affecting the temperature-dependent resistivity of gold. On increasing Vdc, the temperature of the constriction grows and the conductance starts to fluctuate. The general trend is that G(t) decreases when stepping up Vdc. We also consistently observe a

• is illustrated at t = 200 s in Figure 2a. The applied bias is constant, but G(t) decays towards a stable value. This is understood from the temperature-dependent resistivity of the material: For a given Vdc the current flowing in the constriction dissipates heat and affects in return the temperature

• -dependent resistivity [35]. These conductance fluctuations are typically observed for Vdc ≤ 1.7 V and corresponds to the end of the first phase of voltage increments. When applying higher voltages, G(t) generally drops with a rate rapidly increasing with time. The process is entering a second phase. This

Defect formation in multiwalled carbon nanotubes under low-energy He and Ne ion irradiation

• Santhana Eswara,
• Jean-Nicolas Audinot,
• Brahime El Adib,
• Maël Guennou,
• Tom Wirtz and
• Patrick Philipp

Beilstein J. Nanotechnol. 2018, 9, 1951–1963, doi:10.3762/bjnano.9.186

• , ion irradiation can also be used to modify the electronic properties. The presence of defects can increase the resistivity by several orders of magnitude [2][16]. When combining low-fluence ion irradiation with subsequent annealing, the electrical conductivity of SWCNTs can be improved [17]. The

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si_1−xGe_x and Si layers

• Richard Daubriac,
• Emmanuel Scheid,
• Hiba Rizk,
• Richard Monflier,
• Sylvain Joblot,
• Rémi Beneyton,
• Pablo Acosta Alba,
• Sébastien Kerdilès and
• Filadelfo Cristiano

Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

• such a small resolution. Thanks to the use of an AFM tip, 2D scanning spreading resistance microscopy (SSRM) has been shown to achieve sub-nanometre resolution [11][12]. However, in this technique, the carrier concentration is inferred from a resistivity profile under the assumption that carrier

• concentration varies ideally with mobility, which is not always the case, especially when a part of the dopant is not electrically active [13]. For this reason, reliable mobility and concentration profiling based on scanning probe techniques require a combination of resistivity measurements by SSRM with carrier

• be successfully applied to ultrathin SiGeOI layers of about 6 nm thickness, while obtaining active dopant concentrations at the surface well above 1 × 1020 cm−3. This is a promising result in view of improving contact resistivity in source/drain regions of advanced devices. Study of 11 nm arsenic

Uniform cobalt nanoparticles embedded in hexagonal mesoporous nanoplates as a magnetically separable, recyclable adsorbent

• Can Zhao,
• Yuexiao Song,
• Tianyu Xiang,
• Wenxiu Qu,
• Shuo Lou,
• Xiaohong Yin and
• Feng Xin

Beilstein J. Nanotechnol. 2018, 9, 1770–1781, doi:10.3762/bjnano.9.168

• used without any further purification. Ultrapure water with a resistivity of 18.25 MΩ·cm was used in all experiments. Synthesis of CoAl layered double hydroxide CoAl LDH was synthesized via a simple hydrothermal method using urea as the alkali source. In a typical process, CoCl2·6H2O, AlCl3·6H2O, and

Increasing the performance of a superconducting spin valve using a Heusler alloy

• Andrey A. Kamashev,
• Aidar A. Validov,
• Joachim Schumann,
• Vladislav Kataev,
• Bernd Büchner,
• Yakov V. Fominov and
• Ilgiz A. Garifullin

Beilstein J. Nanotechnol. 2018, 9, 1764–1769, doi:10.3762/bjnano.9.167

• to estimate these parameters characterizing the properties of the S layer we use our experimental data on the resistivity and on the dependence of Tc on the S-layer thickness at a large unchanged thickness of the F layer in the S/F bilayer. The residual resistivity ρS = ρ(Tc) can be determined from

• the residual resistivity ratio RRR = R(T = 300 K)/R(Tc= [ρ(300 K) + ρ(Tc)]/ρ(Tc). Since the room-temperature resistivity of the Pb layer is dominated by the phonon contribution ρph(300 K) = 21 μΩ·cm [27] we obtain the ρS values presented below in Table 1. Then with the aid of the Pippard relations [28

Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

• Daniel Hiller,
• Julian López-Vidrier,
• Keita Nomoto,
• Michael Wahl,
• Wolfgang Bock,
• Tomáš Chlouba,
• František Trojánek,
• Sebastian Gutsch,
• Margit Zacharias,
• Dirk König,
• Petr Malý and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2018, 9, 1501–1511, doi:10.3762/bjnano.9.141

• the higher resistivity of the N-free oxide as compared to oxynitride masks the field-induce charge carrier generation from B-doped NCs. Comparing P-doped NCs in both matrices this effect was not found. Summarizing the results reported here and previously [29][30][41][52] it turns out that P- and B

Tailoring polarization and magnetization of absorbing terahertz metamaterials using a cut-wire sandwich structure

• Hadi Teguh Yudistira,
• Shuo Liu,
• Tie Jun Cui and
• Han Zhang

Beilstein J. Nanotechnol. 2018, 9, 1437–1447, doi:10.3762/bjnano.9.136

• separated by a layer of benzocyclobutane (BCB) as a dielectric substrate. The sample was fabricated on a high-resistivity thick silicon substrate with 1 mm thickness. Their simulation results showed that a peak absorptivity of 95% at 1.13 THz was reached and the fabricated structure reached a measured

Nanoporous silicon nitride-based membranes of controlled pore size, shape and areal density: Fabrication as well as electrophoretic and molecular filtering characterization

• Axel Seidenstücker,
• Stefan Beirle,
• Fabian Enderle,
• Paul Ziemann,
• Othmar Marti and
• Alfred Plettl

Beilstein J. Nanotechnol. 2018, 9, 1390–1398, doi:10.3762/bjnano.9.131

• and assuming a homogenous resistivity of the electrolyte; for further details see Supporting Information File 1. Note the following in this context: The applied RIE processes involving CHF3/CF4 plasmas have a propensity for the formation of Teflon-like CF layers which, by influencing the wettability