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Search for "silicon" in Full Text gives 874 result(s) in Beilstein Journal of Nanotechnology. Showing first 200.

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

  • Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

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  • interaction volume and resulting modification of the sample for helium ions impinging on bulk silicon and copper targets providing key insights into the beam–sample interaction [16]. Dose series were conducted and the interaction volumes directly visualized by preparing cross sections by gallium focused ion
  • . Conversely, helium ion irradiation of another material, silicon nitride, in the HIM was found to reduce its fluorescence [60]. This was attributed to ion beam-induced disruption of the optically active defects present in the material. In the cited work, the effect was used to locally reduce the fluorescence
  • of patches of a silicon nitride membrane that were subsequently perforated by helium ion beam milling to create solid-state nanopores for biomolecule detection. Following this approach, a low fluorescence background was achieved, facilitating the translocation detection of fluorescently labeled
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Published 02 Jul 2021

Impact of GaAs(100) surface preparation on EQE of AZO/Al2O3/p-GaAs photovoltaic structures

  • Piotr Caban,
  • Rafał Pietruszka,
  • Jarosław Kaszewski,
  • Monika Ożga,
  • Bartłomiej S. Witkowski,
  • Krzysztof Kopalko,
  • Piotr Kuźmiuk,
  • Katarzyna Gwóźdź,
  • Ewa Płaczek-Popko,
  • Krystyna Lawniczak-Jablonska and
  • Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 578–592, doi:10.3762/bjnano.12.48

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  • ; gallium arsenide; photovoltaics; surface passivation; Introduction The atomic layer deposition (ALD) method is used for silicon passivation in photovoltaics. In recent years we proposed the usage of ALD for the construction of simplified Si-based cells [1]. Once zinc oxide (ZnO) nanorods were employed as
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Published 28 Jun 2021

Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

  • Jakub Kierdaszuk,
  • Piotr Kaźmierczak,
  • Justyna Grzonka,
  • Aleksandra Krajewska,
  • Aleksandra Przewłoka,
  • Wawrzyniec Kaszub,
  • Zbigniew R. Zytkiewicz,
  • Marta Sobanska,
  • Maria Kamińska,
  • Andrzej Wysmołek and
  • Aneta Drabińska

Beilstein J. Nanotechnol. 2021, 12, 566–577, doi:10.3762/bjnano.12.47

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  • and adjacent layers should be studied. It is well established already that graphene grown on silicon carbide is less strained on substrate terraces than on terrace edges, while electron concentration on the edges is lower than that on terraces [4]. This example shows that fluctuations of substrate
  • , studies of graphene on NWs with different densities and variations in height might give information about the role of supporting points on graphene properties. For example, the analysis of graphene deposited on uniformly distributed silicon nanopillars showed the dependence of graphene strain on the
  • ) silicon substrates [33]. The application of different growth temperatures and growth times allowed to obtain nanowires with different variations in height [34]. In our experiment, we used three samples differing in NW substrate height and density. The samples were named N (from NWs) with the addition of a
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Published 22 Jun 2021

On the stability of microwave-fabricated SERS substrates – chemical and morphological considerations

  • Limin Wang,
  • Aisha Adebola Womiloju,
  • Christiane Höppener,
  • Ulrich S. Schubert and
  • Stephanie Hoeppener

Beilstein J. Nanotechnol. 2021, 12, 541–551, doi:10.3762/bjnano.12.44

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  • drop-coating and self-assembly procedures [20][21][22]. Alternatively, monolayers of nanoparticles can be formed directly on substrates by a microwave-assisted one-step fabrication process [23][24] on glass and silicon-based substrates with different shapes (e.g., on flat substrates as well as inside
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Published 11 Jun 2021

Determining amplitude and tilt of a lateral force microscopy sensor

  • Oliver Gretz,
  • Alfred J. Weymouth,
  • Thomas Holzmann,
  • Korbinian Pürckhauer and
  • Franz J. Giessibl

Beilstein J. Nanotechnol. 2021, 12, 517–524, doi:10.3762/bjnano.12.42

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  • setup) or biaxial AFM with normal force detection is required. Experimentally, there are several methods for performing frequency-modulation lateral force microscopy, what we refer to as LFM in this manuscript. In 2002, Pfeiffer and co-workers excited a silicon cantilever in the first torsional mode [4
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Published 01 Jun 2021

Reconstruction of a 2D layer of KBr on Ir(111) and electromechanical alteration by graphene

  • Zhao Liu,
  • Antoine Hinaut,
  • Stefan Peeters,
  • Sebastian Scherb,
  • Ernst Meyer,
  • Maria Clelia Righi and
  • Thilo Glatzel

Beilstein J. Nanotechnol. 2021, 12, 432–439, doi:10.3762/bjnano.12.35

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  • K). Atomic force microscopy Experiments were performed by using a custom-built UHV AFM microscope operating at room temperature and a base pressure of 5 × 10−11 mbar. All images were scanned with silicon cantilevers equipped with sharp tips (PPP-NCL, Nanosensors) running in noncontact AFM mode with
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Published 11 May 2021

Solution combustion synthesis of a nanometer-scale Co3O4 anode material for Li-ion batteries

  • Monika Michalska,
  • Huajun Xu,
  • Qingmin Shan,
  • Shiqiang Zhang,
  • Yohan Dall'Agnese,
  • Yu Gao,
  • Amrita Jain and
  • Marcin Krajewski

Beilstein J. Nanotechnol. 2021, 12, 424–431, doi:10.3762/bjnano.12.34

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  • sites). Crystalline Co3O4 exhibits the space group Fd3m (227) [5]. It also can reversibly store eight lithium ions according to the following conversion reaction: This redox reaction corresponds to a theoretical capacity of about 890 mAh·g−1 [1][2][3][4]. However, similarly to silicon and tin materials
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Published 10 May 2021

A stretchable triboelectric nanogenerator made of silver-coated glass microspheres for human motion energy harvesting and self-powered sensing applications

  • Hui Li,
  • Yaju Zhang,
  • Yonghui Wu,
  • Hui Zhao,
  • Weichao Wang,
  • Xu He and
  • Haiwu Zheng

Beilstein J. Nanotechnol. 2021, 12, 402–412, doi:10.3762/bjnano.12.32

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  • Hui Li Yaju Zhang Yonghui Wu Hui Zhao Weichao Wang Xu He Haiwu Zheng School of Physics and Electronics, Henan University, Kaifeng 475004, China School of Mechanical and Automotive Engineering, Henan Key Laboratory for Advanced Silicon Carbide Materials, Kaifeng University, Kaifeng, 475004, China
  • frictional layer and silicon rubber are separating (Figure 2a-III), the negative charges on the silicone rubber surface drive the electrons of the SCGMs to flow to ground, generating a reverse triboelectric potential. When frictional layer and silicone rubber are entirely separated, the electrostatic
  • the silicon rubber can be controlled. The open-circuit voltage (VOC) peaks remain unchanged when the frequency varies from 1 to 2.5 Hz (Figure 2b-I). The short-circuit current (ISC) increases from 1 to 4.2 μA when the frequency goes from 1 to 2.5 Hz (Figure 2b-II). The peak values of VOC and ISC go up
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Published 03 May 2021

The impact of molecular tumor profiling on the design strategies for targeting myeloid leukemia and EGFR/CD44-positive solid tumors

  • Nikola Geskovski,
  • Nadica Matevska-Geshkovska,
  • Simona Dimchevska Sazdovska,
  • Marija Glavas Dodov,
  • Kristina Mladenovska and
  • Katerina Goracinova

Beilstein J. Nanotechnol. 2021, 12, 375–401, doi:10.3762/bjnano.12.31

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  • developed E-selectin-targeted porous silicon particles with capabilities for selective uptake to the BM [35]. The authors formulated a multistage carrier composed of porous silica microparticles that encapsulate nanoscale paclitaxel-loaded liposomes. The porous silica particles were decorated with E
  • without ligands, in a healthy murine model. Even though the authors reported an organ distribution of nearly 20% per gram in the BM, most of the porous silicon particles were entrapped in the spleen, liver, and lungs, because of their size and surface characteristics. In this case, the physicochemical
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Published 29 Apr 2021

Structural and optical characteristics determined by the sputtering deposition conditions of oxide thin films

  • Petronela Prepelita,
  • Florin Garoi and
  • Valentin Craciun

Beilstein J. Nanotechnol. 2021, 12, 354–365, doi:10.3762/bjnano.12.29

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  • Petronela Prepelita Florin Garoi Valentin Craciun National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Street, PO Box MG-36, Magurele 077125, Ilfov, Romania 10.3762/bjnano.12.29 Abstract The influence of film thickness on the structural and optical properties of silicon
  • nm thick sample), while the amount of Si K decreases. The atomic concentration of silicon decreases very slightly from 51.62% to 34.11%. The EDS analysis of the surface of the SiO2 oxide films illustrates an increase in the amount of oxygen as the film thickness increases. In addition, the mass
  • concentration of silicon decreases from 64.64% to 49.50%, accompanied by an increase in the oxide content from 35.36% to 50.50%. The same target was used, with a standard chemical composition and good stoichiometry. The deposited thin films have a chemical composition with values close to this target
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Published 19 Apr 2021

Exploring the fabrication and transfer mechanism of metallic nanostructures on carbon nanomembranes via focused electron beam induced processing

  • Christian Preischl,
  • Linh Hoang Le,
  • Elif Bilgilisoy,
  • Armin Gölzhäuser and
  • Hubertus Marbach

Beilstein J. Nanotechnol. 2021, 12, 319–329, doi:10.3762/bjnano.12.26

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  • suitable combination of substrate and precursor is a prerequisite, that is, the substrate must be chemically altered by the electron beam and the precursor molecule must be susceptible to the altered site. Substrates that are known to fulfill the prerequisite are silicon oxide [10][12], rutile TiO2(110
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Published 07 Apr 2021

The patterning toolbox FIB-o-mat: Exploiting the full potential of focused helium ions for nanofabrication

  • Victor Deinhart,
  • Lisa-Marie Kern,
  • Jan N. Kirchhof,
  • Sabrina Juergensen,
  • Joris Sturm,
  • Enno Krauss,
  • Thorsten Feichtner,
  • Sviatoslav Kovalchuk,
  • Michael Schneider,
  • Dieter Engel,
  • Bastian Pfau,
  • Bert Hecht,
  • Kirill I. Bolotin,
  • Stephanie Reich and
  • Katja Höflich

Beilstein J. Nanotechnol. 2021, 12, 304–318, doi:10.3762/bjnano.12.25

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  • depth of 30 keV He ions in silicon is more than five times larger than the penetration depth of Ga ions of the same energy [21]. The consequently large collision cascade may create a significant amount of heat. Even for small ion doses deformation of the manufactured structures can be observed when
  • ]. The fabrication of the samples starts by depositing the magnetic multilayer onto 150 nm thick silicon nitride membranes via magnetron sputtering. The membranes are almost transparent for soft X-rays, which are later employed for imaging of the samples. Subsequently, the multilayer film is locally
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Published 06 Apr 2021

Gold(I) N-heterocyclic carbene precursors for focused electron beam-induced deposition

  • Cristiano Glessi,
  • Aya Mahgoub,
  • Cornelis W. Hagen and
  • Mats Tilset

Beilstein J. Nanotechnol. 2021, 12, 257–269, doi:10.3762/bjnano.12.21

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  • comparison with the 1H NMR spectrum of the bulk material (see Supporting Information File 1). Deposition setup All deposition experiments were performed in a Thermo Fisher Scientific Nova Nanolab 600 dual-beam SEM. The base chamber pressure was about 1 × 10−6 mbar. Silicon substrates were used for all
  • experiments. The silicon substrates were cleaned by ultrasonication in acetone for 15 min, followed by ultrasonication in isopropanol for 15 min and blow drying with N2, and were kept in a dust free environment. For each precursor a different substrate was used to avoid cross contamination. The substrate was
  • from the bottom of an aluminium plate (9.5 × 9.5 × 1 mm3). The plate lies directly on the 10 × 10 mm2 silicon substrate, covering some precursor crystals positioned on the substrate, and is kept in place with vacuum-compatible Kapton tape. Only small quantities are needed to test a precursor, and a
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Published 17 Mar 2021

Scanning transmission helium ion microscopy on carbon nanomembranes

  • Daniel Emmrich,
  • Annalena Wolff,
  • Nikolaus Meyerbröker,
  • Jörg K. N. Lindner,
  • André Beyer and
  • Armin Gölzhäuser

Beilstein J. Nanotechnol. 2021, 12, 222–231, doi:10.3762/bjnano.12.18

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  • [18], Hall measured the thickness of a silicon nitride membrane down to 5 nm using the bright-field signal [19]. A different detection method is the use of a microchannel plate (MCP). Woehl et al. were able to resolve the core–shell structure of silica-coated gold nanoparticles with an annular
  • detector in the dark field [20]. Kavanagh et al. used a silicon diode array as a pixelated sensor for transmission imaging to observe ion beam scattering with a static beam and as an end-point detection for pore milling into graphite sheets [21]. This work presents the design and capabilities of a dark
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Published 26 Feb 2021

Mapping the local dielectric constant of a biological nanostructured system

  • Wescley Walison Valeriano,
  • Rodrigo Ribeiro Andrade,
  • Juan Pablo Vasco,
  • Angelo Malachias,
  • Bernardo Ruegger Almeida Neves,
  • Paulo Sergio Soares Guimarães and
  • Wagner Nunes Rodrigues

Beilstein J. Nanotechnol. 2021, 12, 139–150, doi:10.3762/bjnano.12.11

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  • , resulting in an orientation of the wing fragment perpendicular to the cutting plane. Sections 40 nm thick of the apex wedge were cut using a diamond knife and placed on 10 mm × 10 mm Au/Cr (60 nm/20 nm)-coated silicon wafer pieces. A conductive substrate surface is necessary for the proposed εr
  • defined disks of Al2O3 films with a radius of 5 µm deposited by ALD on Au/Cr (60 nm/20 nm)-coated silicon wafer pieces. The topographic image of an Al2O3 disk measured with AFM is shown in Figure 9a. The sample thickness was (21.0 ± 0.2) nm, relative to the gold surface. In the EFM mode, the microscope
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Published 28 Jan 2021

Bulk chemical composition contrast from attractive forces in AFM force spectroscopy

  • Dorothee Silbernagl,
  • Media Ghasem Zadeh Khorasani,
  • Natalia Cano Murillo,
  • Anna Maria Elert and
  • Heinz Sturm

Beilstein J. Nanotechnol. 2021, 12, 58–71, doi:10.3762/bjnano.12.5

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  • ) covering the spectral range from 900 cm−1 to 1900 cm−1. An Au-coated silicon probe (tip D) was employed. The force curves were analyzed by SOFA [45] and the deconvolution of histograms was done by using Omnic (ThermoFisher Scientific) and fityk software [46]. The following epoxy system was used as the
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Published 18 Jan 2021

Atomic layer deposited films of Al2O3 on fluorine-doped tin oxide electrodes: stability and barrier properties

  • Hana Krýsová,
  • Michael Neumann-Spallart,
  • Hana Tarábková,
  • Pavel Janda,
  • Ladislav Kavan and
  • Josef Krýsa

Beilstein J. Nanotechnol. 2021, 12, 24–34, doi:10.3762/bjnano.12.2

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  • alumina coatings was ascribed to its capability of passivating semiconductor/electrolyte interfaces, thus reducing photogenerated charge-carrier recombination (e.g., on BiVO4 [16]). In this work, Al2O3 films were deposited via ALD on thermally grown SiO2 on silicon or on fluorine-doped tin oxide (FTO
  • , and water and dried in a stream of argon. Si(100) wafers with a 300 nm thick thermal oxide layer (Silicon Quest International, USA) were treated successively with acetone/ethanol/water. Al2O3 films were grown by using an ALD system R200 (Picosun, Finland) in the thermal mode with varying numbers of
  • precursor was 0.1 s with a purge time of 5 s and the pulse of H2O was 0.1 s with a purge time of 10 s. TMA and water were maintained at 22 °C. Nitrogen (99.999%, Linde) was used as a carrier gas. The deposition of aluminium oxide films on silicon or FTO was carried out by performing 30, 60, 120, and 200
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Published 05 Jan 2021

Free and partially encapsulated manganese ferrite nanoparticles in multiwall carbon nanotubes

  • Saja Al-Khabouri,
  • Salim Al-Harthi,
  • Toru Maekawa,
  • Mohamed E. Elzain,
  • Ashraf Al-Hinai,
  • Ahmed D. Al-Rawas,
  • Abbsher M. Gismelseed,
  • Ali A. Yousif and
  • Myo Tay Zar Myint

Beilstein J. Nanotechnol. 2020, 11, 1891–1904, doi:10.3762/bjnano.11.170

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  • , and Mössbauer characterization The X-ray diffraction patterns were acquired using Cu Kα radiation (λ = 1.5404 Å) at a Philips PW1820 diffractometer. The instrument was calibrated using a silicon disc. Free manganese ferrite nanoparticles were characterized using high-resolution transmission electron
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Published 29 Dec 2020

Towards 3D self-assembled rolled multiwall carbon nanotube structures by spontaneous peel off

  • Jonathan Quinson

Beilstein J. Nanotechnol. 2020, 11, 1865–1872, doi:10.3762/bjnano.11.168

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  • carpets [22], less conventional and complex structures were also developed and their formation mechanism is proposed in this study. In a typical AACVD synthesis, MWCNTs grow perpendicular to the substrates (i.e., quartz reactor walls or silicon wafers [23]). Under the conditions of the present study, it
  • first observed by the naked eye. Based on a morphological characterization from a previous work [16], four distinct sections are identified along the MWCNT forest. From top to bottom (bottom is marked by the silicon substrate at the bottom of the image), one can see a “wavy”, a “straight”, another “wavy
  • prepared by following a general approach detailed recently [16]. MWCNTs were synthesized at 800 °C with argon (Ar, 99.999%, BOC) as the carrier flow using an AACVD setup [12][23]. Briefly, MWCNTs were grown on silicon wafer substrates (10 × 20 mm2, Sibert, UK) by using an aerosol CVD setup consisting of a
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Published 18 Dec 2020

Scanning transmission imaging in the helium ion microscope using a microchannel plate with a delay line detector

  • Eduardo Serralta,
  • Nico Klingner,
  • Olivier De Castro,
  • Michael Mousley,
  • Santhana Eswara,
  • Serge Duarte Pinto,
  • Tom Wirtz and
  • Gregor Hlawacek

Beilstein J. Nanotechnol. 2020, 11, 1854–1864, doi:10.3762/bjnano.11.167

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  • also detect channeling-related contrast on polycrystalline silicon, thallium chloride nanocrystals, and single-crystalline silicon by comparing the signal transmitted at different directions for the same data set. Keywords: bright-field; channeling; dark-field; delay line detector; helium ion
  • adjust the acceptance angle interval when performed in DF. Most recently, a position-sensitive detector consisting of a silicon diode array has also been adopted for use in the HIM [31]. Later the same group also studied channeling effects on single-crystalline silicon with this detector [32]. In this
  • transmission-channeling contrast using polycrystalline silicon, thallium chloride samples and beam steering in single-crystalline silicon. Experimental The new STIM detector comprises a stack of two MCPs and a resistive anode layer with a delay line readout structure behind it, as represented in Figure 1c. The
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Published 11 Dec 2020

Nanocasting synthesis of BiFeO3 nanoparticles with enhanced visible-light photocatalytic activity

  • Thomas Cadenbach,
  • Maria J. Benitez,
  • A. Lucia Morales,
  • Cesar Costa Vera,
  • Luis Lascano,
  • Francisco Quiroz,
  • Alexis Debut and
  • Karla Vizuete

Beilstein J. Nanotechnol. 2020, 11, 1822–1833, doi:10.3762/bjnano.11.164

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  • transformed by a Kubelka–Munk model in order to obtain the bandgap energy value [43]. The absorption spectrum of RhB was measured using a UV–vis spectrophotometer GENESYS 30TM with tungsten-halogen light source and silicon photodiode detector. The spectra were fitted with the Thermo Scientific VISIONlite PC
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Published 07 Dec 2020

Nanomechanics of few-layer materials: do individual layers slide upon folding?

  • Ronaldo J. C. Batista,
  • Rafael F. Dias,
  • Ana P. M. Barboza,
  • Alan B. de Oliveira,
  • Taise M. Manhabosco,
  • Thiago R. Gomes-Silva,
  • Matheus J. S. Matos,
  • Andreij C. Gadelha,
  • Cassiano Rabelo,
  • Luiz G. L. Cançado,
  • Ado Jorio,
  • Hélio Chacham and
  • Bernardo R. A. Neves

Beilstein J. Nanotechnol. 2020, 11, 1801–1808, doi:10.3762/bjnano.11.162

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  • obtained interlayer adhesion energy for graphene (0.25 N/m) and talc (0.62 N/m) is in good agreement with recent experimental results and theoretical predictions. The obtained value for the adhesion energy of graphene on a silicon substrate is also in agreement with previous results. Keywords: analytical
  • exfoliated onto a silicon oxide substrate (blue shades). During the exfoliation/deposition processes, such a talc flake folds over itself, creating a well-defined folded edge, shown in orange shades. Figure 1b shows a schematic drawing of the morphology of the fold in Figure 1a. This is the morphology of the
  • ] and 0.98 N/m [39]). Also, the obtained value of αp = 0.42 N/m indicates that the interaction between talc and the silicon probe is smaller than the interaction between talc layers. To combine the data of several force-curve measurements in a single graph, we plotted the rescaled force as a function
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Published 30 Nov 2020

Electron beam-induced deposition of platinum from Pt(CO)2Cl2 and Pt(CO)2Br2

  • Aya Mahgoub,
  • Hang Lu,
  • Rachel M. Thorman,
  • Konstantin Preradovic,
  • Titel Jurca,
  • Lisa McElwee-White,
  • Howard Fairbrother and
  • Cornelis W. Hagen

Beilstein J. Nanotechnol. 2020, 11, 1789–1800, doi:10.3762/bjnano.11.161

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  • exceeding the maximum pressure allowed in the SEM chamber (approximately 10−4 mbar). A silicon substrate was used for all deposition experiments, patterned such that circular areas of pristine silicon are surrounded by black silicon (obtained by reactive ion etching). The black silicon area aids in focusing
  • directional doser, which was used to increase the partial pressure of the precursor at the surface of the substrate (silicon in the case of Pt(CO)2Br2, Ru-capped Si/Mo multilayers in the case of Pt(CO)2Cl2). Deposits were produced over 12 h under steady-state deposition conditions using a 3 kV electron beam
  • -made EDX unit. While deposit thickness was not measured, UHV-deposited samples were thick enough to yield a minimal silicon substrate signal during EDX measurements. Results and Discussion Thermal properties of the precursor Thermogravimetric analysis was used to make a preliminary assessment of the
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Published 27 Nov 2020

Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy

  • Rosine Coq Germanicus,
  • Peter De Wolf,
  • Florent Lallemand,
  • Catherine Bunel,
  • Serge Bardy,
  • Hugues Murray and
  • Ulrike Lüders

Beilstein J. Nanotechnol. 2020, 11, 1764–1775, doi:10.3762/bjnano.11.159

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  • microscopy (sMIM). sMIM allows for the characterization of the local electrical properties through the analysis of the microwave impedance of the metal–insulator–semiconductor nanocapacitor (nano-MIS capacitor) that is formed by tip and sample. A highly integrated monolithic silicon PIN diode with a 3D
  • the back-contact resistance [11], is experimentally determined. Therefore, at a fixed applied bias, the SSRM measurements map the variation in concentration of mobile majority carriers in doped semiconductors. A high load on the tip is required to obtain the spreading resistance. In fact, for silicon
  • , a body-centred tetragonal configuration (β-Sn, also called Si-II) must be formed from the initial cubic diamond silicon (Si-I) in the highly stressed region just below the tip [12]. Furthermore, in air and under ambient conditions, due to the interaction between the tip and the surface, the probe
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Published 23 Nov 2020

Imaging and milling resolution of light ion beams from helium ion microscopy and FIBs driven by liquid metal alloy ion sources

  • Nico Klingner,
  • Gregor Hlawacek,
  • Paul Mazarov,
  • Wolfgang Pilz,
  • Fabian Meyer and
  • Lothar Bischoff

Beilstein J. Nanotechnol. 2020, 11, 1742–1749, doi:10.3762/bjnano.11.156

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  • gallium. Light ions in the range of m = 1–28 u (hydrogen to silicon) are of increasing interest due to the available high beam resolution in the nanometer range and their special chemical and physical behavior in the substrate. In this work, helium and neon ion beams from a helium ion microscope are
  • compared with ion beams such as lithium, beryllium, boron, and silicon, obtained from a mass-separated FIB using a liquid metal alloy ion source (LMAIS) with respect to the imaging and milling resolution, as well as the current stability. Simulations were carried out to investigate whether the
  • ]. In particular, light elements in the mass range of m = 1–28 u (hydrogen to silicon) and energies between a few and 80 kiloelectronvolts are of special interest. The combination of this energy range with the particular mass range allows one to reach single-digit nanometer and even sub-nanometer
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Published 18 Nov 2020
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