High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb)_1−x(MnSb)_x alloy

• Leonid N. Oveshnikov,
• Elena I. Nekhaeva,
• Alexey V. Kochura,
• Alexander B. Davydov,
• Mikhail A. Shakhov,
• Sergey F. Marenkin,
• Oleg A. Novodvorskii,
• Alexander P. Kuzmenko,
• Alexander L. Vasiliev,
• Boris A. Aronzon and
• Erkki Lahderanta

Beilstein J. Nanotechnol. 2018, 9, 2457–2465, doi:10.3762/bjnano.9.230

• . This is in good agreement with the high mobility values of charge carriers. Based on our data we conclude that the magnetic and magnetotransport properties of the films at room temperature are defined by the MnSb inclusions. Keywords: anomalous Hall effect; high-temperature ferromagnetism

• granular systems are the higher values of carrier mobility, about one order of magnitude higher than that in traditional DMS such as Ga1−xMnxAs. This is due to the aggregation of the majority of magnetic impurity atoms within nanoinclusions, which results in a higher crystalline quality of the

• is a GaSb matrix with incorporated MnSb nanograins [8][9][10][14]. However, the best results were obtained not for a composite system but for (GaSb)1−x(MnSb)x alloys with x = 0.41. In annealed samples the mobility of holes was about 100 cm2/(V·s) and Tc was above room temperature [11][12]. Earlier it

Thickness-dependent photoelectrochemical properties of a semitransparent Co₃O₄ photocathode

• Malkeshkumar Patel and
• Joondong Kim

Beilstein J. Nanotechnol. 2018, 9, 2432–2442, doi:10.3762/bjnano.9.228

• in such applications include CuxO [19][29], CdS [30], TiO2 [31], Fe2O3 [32], and BiVO4 [33][34]. To absorb light with Co3O4, an adequately thick film is required. However, the low mobility of photogenerated charge carriers in Co3O4 can result in a low carrier lifetime, which is detrimental for

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO₂/Si₃N₄-coating

• Dirk König,
• Daniel Hiller,
• Noël Wilck,
• Birger Berghoff,
• Merlin Müller,
• Sangeeta Thakur,
• Giovanni Di Santo,
• Luca Petaccia,
• Joachim Mayer,
• Sean Smith and
• Joachim Knoch

Beilstein J. Nanotechnol. 2018, 9, 2255–2264, doi:10.3762/bjnano.9.210

• [13][14]. This concept eliminates doping altogether, leading to a lower inelastic carrier scattering rate and higher carrier mobility which allow for decreased heat loss and bias voltages in ULSI. Such properties enable Si-FET technology to work at even smaller structure sizes, potentially enabling

Lead-free hybrid perovskites for photovoltaics

• Oleksandr Stroyuk

Beilstein J. Nanotechnol. 2018, 9, 2209–2235, doi:10.3762/bjnano.9.207

• -charged cations, such as Sn2+, Mn2+, or Ge2+, where the tin-based materials have gained the most attention and progress [10][16][18][29][30][38][44][54][59][60][61][62][63][64][65]. The Sn-based HPs (CsSnX3, MASnX3) show a high charge carrier mobility and diffusion length, comparable to the Pb-based

• luminescent Cs3Bi2X9 NCs [159]. A study of single-crystal and polycrystalline MABI showed that both materials have a long exciton lifetime and a high carrier mobility [161][163]. A transient absorption study of MABI crystals showed only a minor change of the exciton dynamics when the crystal size was reduced

Dumbbell gold nanoparticle dimer antennas with advanced optical properties

• Janning F. Herrmann and
• Christiane Höppener

Beilstein J. Nanotechnol. 2018, 9, 2188–2197, doi:10.3762/bjnano.9.205

• . Utilizing the capabilities of an AFM to manipulate such structures with sub-nanometer precision in space enables to add a smaller 40 nm AuNP to the larger one. Even though, shorter linker thiol molecules could be used instead, in principle, the high mobility of these linker molecules on the AuNP surface

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

• Noel Kennedy,
• Ray Duffy,
• Luke Eaton,
• Dan O’Connell,
• Scott Monaghan,
• Shane Garvey,
• James Connolly,
• Chris Hatem,
• Justin D. Holmes and
• Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

• wet-chemistry functionalization due to the precise dimensions needed for analysis. The Hall measurement system applies current and magnetic field and measures voltages and resistances. It then infers mobility and carrier properties from these measurements. The sheet resistivity (ρs) is directly

• directly measured and RHS = ρs·µH, we can now infer the Hall mobility, µH. The sheet carrier concentration (ns) is obtained from RHS = hf/ns·e, where e is the electron charge. In dc mode, the carrier type is determined by the sign of the Hall voltage (negative = n-type, positive = p-type). In ac mode, the

• positive outcome. As a result of the increased carrier concentration the mobility drops, which is expected for silicon [15]. Dopant trapping MLD is a surface-diffusion technique in which the dopant source is applied to the substrate surface and requires further thermal treatment to promote diffusion into

A scanning probe microscopy study of nanostructured TiO₂/poly(3-hexylthiophene) hybrid heterojunctions for photovoltaic applications

• Laurie Letertre,
• Roland Roche,
• Olivier Douhéret,
• Hailu G. Kassa,
• Denis Mariolle,
• Nicolas Chevalier,
• Łukasz Borowik,
• Philippe Dumas,
• Benjamin Grévin,
• Roberto Lazzaroni and
• Philippe Leclère

Beilstein J. Nanotechnol. 2018, 9, 2087–2096, doi:10.3762/bjnano.9.197

• , its high hole mobility and its donor-like electronic properties [15]. Upon light absorption by the polymer, excitons are generated and they can be dissociated at the interface with TiO2, the polymer also acting as the hole-transporting layer. In this work, we investigated nanostructured TiO2 layers

A variable probe pitch micro-Hall effect method

• Maria-Louise Witthøft,
• Frederik W. Østerberg,
• Janusz Bogdanowicz,
• Rong Lin,
• Henrik H. Henrichsen,
• Ole Hansen and
• Dirch H. Petersen

Beilstein J. Nanotechnol. 2018, 9, 2032–2039, doi:10.3762/bjnano.9.192

• characterization of ultrathin films with minimal sample preparation. Here, we study in detail how the analysis of raw measurement data affects the accuracy of extracted key sample parameters, i.e., how the standard deviation on sheet resistance, carrier mobility and Hall sheet carrier density is affected by the

• mobility. Keywords: four-point probes; Hall effect; metrology; mobility; variable Probe Pitch; Introduction Materials characterization becomes increasingly difficult as the dimensions of transistors continue to decrease. Although three dimensional electrical characterization is the ultimate goal of

• concentration, mobility and type of charge carriers [2][3]. Some of the measurement methods require significant sample preparation while other methods are destructive [2]. Great progress in measurement simplicity and accuracy has been achieved with the introduction of the micro-Hall effect (MHE) method [4]. The

Recent highlights in nanoscale and mesoscale friction

• Andrea Vanossi,
• Dirk Dietzel,
• Andre Schirmeisen,
• Ernst Meyer,
• Rémy Pawlak,
• Thilo Glatzel,
• Marcin Kisiel,
• Shigeki Kawai and
• Nicola Manini

Beilstein J. Nanotechnol. 2018, 9, 1995–2014, doi:10.3762/bjnano.9.190

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si_1−xGe_x and Si layers

• Richard Daubriac,
• Emmanuel Scheid,
• Hiba Rizk,
• Richard Monflier,
• Sylvain Joblot,
• Rémi Beneyton,
• Pablo Acosta Alba,
• Sébastien Kerdilès and
• Filadelfo Cristiano

Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

• SiGeOI and 11 nm thick SOI. In both cases, DHE is shown to be a uniquely sensitive characterisation technique for a detailed investigation of dopant activation in ultrashallow layers, providing sub-nanometre resolution for both dopant concentration and carrier mobility depth profiles. Keywords: carrier

• mobility; contact resistance; differential Hall effect; dopant activation; fully depleted silicon on insulator (FDSOI); laser annealing; sub-nanometre resolution; Introduction The research efforts made throughout the last decades have made it possible to keep the momentum for a continuous miniaturization

• concentration varies ideally with mobility, which is not always the case, especially when a part of the dopant is not electrically active [13]. For this reason, reliable mobility and concentration profiling based on scanning probe techniques require a combination of resistivity measurements by SSRM with carrier

Nonlinear effect of carrier drift on the performance of an n-type ZnO nanowire nanogenerator by coupling piezoelectric effect and semiconduction

• Yuxing Liang,
• Shuaiqi Fan,
• Xuedong Chen and
• Yuantai Hu

Beilstein J. Nanotechnol. 2018, 9, 1917–1925, doi:10.3762/bjnano.9.183

• electric current expression, Ji = qnμijEj + qκijn,j, is essentially nonlinear. Since a ZNW with the crystallographic c-axis along the x3-direction is transversely isotropic, the electron mobility μij and the diffusion coefficients κij can be written as The two in-plane components of the electric field can

The inhibition effect of water on the purification of natural gas with nanoporous graphene membranes

• Krzysztof Nieszporek,
• Tomasz Pańczyk and
• Jolanta Nieszporek

Beilstein J. Nanotechnol. 2018, 9, 1906–1916, doi:10.3762/bjnano.9.182

• increase of the number of water molecules in the permeate area (Figure 11, top panel) is exactly the same case. Figure 12 proves the existence of the water drop in the center of the nanopore. The increase of temperature of the system boosts the kinetic mobility of molecules and hence the gas pressure in

• water fulfills the cut-off criteria: The most probable bond distance and angle are 0.27 nm and 12°, respectively. The increase of simulation temperature causes an increase of kinetic mobility of the molecules and hence the distance and angle distributions are slightly wider. While describing the

The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability

• Hichem Ferhati,
• Fayçal Djeffal and
• Toufik Bentrcia

Beilstein J. Nanotechnol. 2018, 9, 1856–1862, doi:10.3762/bjnano.9.177

• temperatures in the current equations [25]. Moreover, models for carrier recombination (Shockley–Read–Hall (SRH), Auger and surface recombination) are also adopted [26]. In fact, the carrier mobility mainly depends on three quantities, transverse and parallel electric field, doping and temperature, which were

• combined using Matthiessen’s formula. Accordingly, the Lombardi model (CVT) is used to express the carrier mobility in the channel [27]. Moreover, the intrinsic parameters of the materials (Si, Si1−xGex and Ge) such as band gap, mobility and the density of states were considered to be dependent on the Ge

• conventional design with Si channel shows a reduced OFF-state current compared to that of the investigated heterochannel designs, which is mainly due to the high band-gap energy and the low electron mobility associated to Si. On the other hand, the conventional Ge-DG-JL TFET design provides higher ON-state

Improving the catalytic activity for hydrogen evolution of monolayered SnSe_2(1−x)S_2x by mechanical strain

• Sha Dong and
• Zhiguo Wang

Beilstein J. Nanotechnol. 2018, 9, 1820–1827, doi:10.3762/bjnano.9.173

• conductivity. Tuning the band structure of the catalyst is important for improving the HER efficiency. It was reported that the band structure and carrier mobility of monolayer MX2 can be tuned by substitution of M with M' atoms or X with X' atoms to form monolayer MxM'(1−x)X2 or MX2xX'2(1−x) alloys [31][32

Multimodal noncontact atomic force microscopy and Kelvin probe force microscopy investigations of organolead tribromide perovskite single crystals

• Yann Almadori,
• David Moerman,
• Jaume Llacer Martinez,
• Philippe Leclère and
• Benjamin Grévin

Beilstein J. Nanotechnol. 2018, 9, 1695–1704, doi:10.3762/bjnano.9.161

• , including a direct band gap, high absorption coefficient, large and balanced carrier mobility, high diffusion length, long carrier lifetime and high photoluminescence quantum yield. Within a few years of their discovery, these materials were successfully used to develop photovoltaic cells [2] with power

Free-radical gases on two-dimensional transition-metal disulfides (XS₂, X = Mo/W): robust half-metallicity for efficient nitrogen oxide sensors

• Chunmei Zhang,
• Yalong Jiao,
• Fengxian Ma,
• Sri Kasi Matta,
• Steven Bottle and
• Aijun Du

Beilstein J. Nanotechnol. 2018, 9, 1641–1646, doi:10.3762/bjnano.9.156

• been confirmed to be a good candidate for fabricating field-effect transistor (FET) sensors for NO with high mobility at room temperature [17], and the detection offers a high sensitivity and rapid current response. However, the detailed mechanism regarding the interaction between the MoS2 surface and

Nanoscale electrochemical response of lithium-ion cathodes: a combined study using C-AFM and SIMS

• Jonathan Op de Beeck,
• Nouha Labyedh,
• Alfonso Sepúlveda,
• Valentina Spampinato,
• Alexis Franquet,
• Thierry Conard,
• Philippe M. Vereecken,
• Wilfried Vandervorst and
• Umberto Celano

Beilstein J. Nanotechnol. 2018, 9, 1623–1628, doi:10.3762/bjnano.9.154

• the anode and cathode, creates high-mobility channels for the lithium migration, thus significantly enhancing the ionic conductivity of these materials [5]. However, being based on diffusion in a solid versus a liquid, the success of ASB will depend on the capability to address the nanoscale ionic

• between the trace (1) and retrace (2) dc bias sweeps. The amplitude of the hysteresis depends on the local concentration and mobility of Li under the tip. Figure 3a shows the example of two I–V curves acquired (1) in a pristine area (green trace) and (2) in a region that was previously scanned with the

• is required in particular for a quantitative interpretation of the information contained in the ionic hysteresis (Figure 3a), especially the conversion of the I–V resistance shift in relevant ionic parameters, e.g., local ionic mobility or diffusivity. This is an ongoing activity and represents the

Nanocomposites comprised of homogeneously dispersed magnetic iron-oxide nanoparticles and poly(methyl methacrylate)

• Sašo Gyergyek,
• David Pahovnik,
• Ema Žagar,
• Alenka Mertelj,
• Rok Kostanjšek,
• Miloš Beković,
• Marko Jagodič,
• Heinrich Hofmann and
• Darko Makovec

Beilstein J. Nanotechnol. 2018, 9, 1613–1622, doi:10.3762/bjnano.9.153

• of less segment mobility that effectively prevented the access of the H+ and citrate anion to the surface of the NP-PMMA nanoparticles. Superparamagnetic behavior of the NP-RA nanoparticles and nanocomposites is evident from the room-temperature magnetization curves (Figure 5a). The saturation

Correlative electrochemical strain and scanning electron microscopy for local characterization of the solid state electrolyte Li_1.3Al_0.3Ti_1.7(PO₄)₃

• Nino Schön,
• Deniz Cihan Gunduz,
• Shicheng Yu,
• Hermann Tempel,
• Roland Schierholz and
• Florian Hausen

Beilstein J. Nanotechnol. 2018, 9, 1564–1572, doi:10.3762/bjnano.9.148

• at identical regions to identify microstructural components such as an AlPO4 secondary phase. We found significantly lower Li-ion mobility in the secondary phase areas as well as at grain boundaries. Additionally, various aspects of signal formation obtained from ESM for solid state electrolytes are

• area (typically in the range of 1 cm2). Hence, only averaged values are obtained whilst locally the ion mobility can still be inhomogeneous [11]. Translating local ion migration into global conductivity is part of ongoing research. First approaches for small-scale impedance measurements have been

• -ion mobility in Li0.33La0.56TiO3 using scanning electron microscopy (SEM) with electron backscatter diffraction (EBSD) and electrochemical strain microscopy (ESM) [21]. The authors correlate variations in the Li-ion mobility detected by ESM with limitations in the Li-ion migration pathway. ESM is a

Photoluminescence of CdSe/ZnS quantum dots in nematic liquid crystals in electric fields

• Margarita A. Kurochkina,
• Elena A. Konshina and
• Daria Khmelevskaia

Beilstein J. Nanotechnol. 2018, 9, 1544–1549, doi:10.3762/bjnano.9.145

• QD luminescence begins with the reorientation of LC molecules in the electric field. The mobility and current of ions increase in the LC. Therefore, the influence of charge carriers on the deactivation of QDs photoexcitation is possible. In the passive LC matrix, the director aligns along the

Predicting the strain-mediated topological phase transition in 3D cubic ThTaN₃

• Chunmei Zhang and
• Aijun Du

Beilstein J. Nanotechnol. 2018, 9, 1399–1404, doi:10.3762/bjnano.9.132

• to note that the conduction band (CB) of ThTaN3 is very dispersive around the Γ point, signifying a very low electron effective mass. The effective mass of the electron at the Γ point is calculated to be 0.395 me. Such a small electron mass will greatly improve charge carrier mobility, suggesting

Non-equilibrium electron transport induced by terahertz radiation in the topological and trivial phases of Hg_1−xCd_xTe

• Alexandra V. Galeeva,
• Alexey I. Artamkin,
• Alexey S. Kazakov,
• Sergey N. Danilov,
• Sergey A. Dvoretskiy,
• Nikolay N. Mikhailov,
• Ludmila I. Ryabova and
• Dmitry R. Khokhlov

Beilstein J. Nanotechnol. 2018, 9, 1035–1039, doi:10.3762/bjnano.9.96

• = 0.17) depends strongly on the radiation wavelength. The electron gas heating by the incident radiation followed by an electron mobility drop is most likely responsible for this effect. This mobility drop is due to a scattering time drop with increasing energy, as well as to a substantial increase in

• the mobility drop that should result in the negative photoconductivity. The second effect corresponds to the spatial diffusion of excited electrons to the 2D area. Indeed, it is located at the bottom of the well. Beside that, the density of the 2D Dirac states depends linearly on energy E, whereas it

• is proportional to E1/2 for the bulk conduction band states. It means that for the heated electrons, there is an increased probability to diffuse to the z0 position. Mobility of 2D Dirac electrons is much higher than it is for the bulk electrons, therefore this diffusion process results in the

Single-crystalline FeCo nanoparticle-filled carbon nanotubes: synthesis, structural characterization and magnetic properties

• Rasha Ghunaim,
• Maik Scholz,
• Christine Damm,
• Bernd Rellinghaus,
• Rüdiger Klingeler,
• Bernd Büchner,
• Michael Mertig and
• Silke Hampel

Beilstein J. Nanotechnol. 2018, 9, 1024–1034, doi:10.3762/bjnano.9.95

• magnetic storage [6][7], fuel cells [8], electromagnetic wave absorption [9], sensors for magnetic force microscopy [10] and human tumor therapy [11][12][13]. Fe–Co binary alloys are of particular interest due to their high saturation magnetization, large permeability and high magnetophoretic mobility [14

Enzymatically promoted release of organic molecules linked to magnetic nanoparticles

• Chiara Lambruschini,
• Silvia Villa,
• Luca Banfi,
• Fabio Canepa,
• Fabio Morana,
• Annalisa Relini,
• Paola Riani,
• Renata Riva and
• Fulvio Silvetti

Beilstein J. Nanotechnol. 2018, 9, 986–999, doi:10.3762/bjnano.9.92

• free 6 but with different intensity, especially for band I (378 nm) and III (398 nm). This evidence can be ascribed to the effective coupling that occurs on the surface of the nanoparticles that affects the mobility, forcing the molecule in fixed conformations. A similar behaviour is observed with the

Electro-optical interfacial effects on a graphene/π-conjugated organic semiconductor hybrid system

• Karolline A. S. Araujo,
• Luiz A. Cury,
• Matheus J. S. Matos,
• Thales F. D. Fernandes,
• Luiz G. Cançado and
• Bernardo R. A. Neves

Beilstein J. Nanotechnol. 2018, 9, 963–974, doi:10.3762/bjnano.9.90

• multilayered RA sample portrays a substantial increase in PL intensity as the temperature decreases. These features are understood in light of previous studies, which demonstrated that the exciton mobility in organic semiconductor occurs via both dipole–dipole coupling (Förster transfer) and thermally assisted