The role of a tantalum interlayer in enhancing the properties of Fe₃O₄ thin films

• Hai Dang Ngo,
• Vo Doan Thanh Truong,
• Van Qui Le,
• Hoai Phuong Pham and
• Thi Kim Hang Pham

Beilstein J. Nanotechnol. 2024, 15, 1253–1259, doi:10.3762/bjnano.15.101

• films [11][12][13]. The RF magnetron sputtering technique is extensively utilized because of its cost-effectiveness, simplicity, effectiveness, and capacity to produce Fe3O4 films with remarkable uniformity. The qualities of the films can be modified by manipulating parameters throughout the growth

• structure of Fe3O4 thin films and help to boost the magnetic properties. Experimental RF magnetron sputtering was used at room temperature to grow magnetite films with 40 nm thickness on a variety of substrates, including SiO2, MgO(100), and the multilayer substrate MgO/Ta/SiO2/Si(100). The MgO(100

• ) substrate using RF magnetron sputtering. This was followed by the formation of a 5 nm thick layer of MgO. The Fe3O4 layers were applied using RF magnetron sputtering at a base pressure of 10−8 Torr, employing a flow of 33 sccm of Ar gas to maintain a stable plasma. The initially deposited films were

Controllable physicochemical properties of WO_x thin films grown under glancing angle

• Rupam Mandal,
• Aparajita Mandal,
• Alapan Dutta,
• Rengasamy Sivakumar,
• Sanjeev Kumar Srivastava and
• Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

• thin films were deposited on ultrasonically cleaned p-Si (100) and soda lime glass substrates of 1 × 1 cm2 dimension using a rf magnetron sputtering setup (Excel Instruments). Trichloroethylene, propanol, acetone, and DI water were used to carry out ultrasonication of the substrates for removing

Electrical and optical enhancement of ITO/Mo bilayer thin films via laser annealing

• Abdelbaki Hacini,
• Ahmad Hadi Ali,
• Nurul Nadia Adnan and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2022, 13, 1589–1595, doi:10.3762/bjnano.13.133

• . Experimental IM bilayer thin films were sputtered on n-type silicon(111) substrates for structural, morphological, and electrical characterization. In addition, the bilayer thin films were deposited on glass substrates for optical characterization. This process was performed using RF magnetron sputtering

• decreased with the increase of laser energy. Consequently, the optimal laser energy can be estimated as 120 mJ for the ITO/Mo bilayer structure from the presented electrical and optical results. Conclusion ITO/Mo bilayer thin film structures were deposited on glass and silicon substrates using RF magnetron

• sputtering and, subsequently, investigated. The films were annealed using a Nd:YAG pulsed laser with different energies. The inclusion of thin Mo films and annealing at 120 mJ improved the structural, morphological, optical, and electrical properties. The XRD results show a good crystallinity for the

Plasmon-enhanced photoluminescence from TiO₂ and TeO₂ thin films doped by Eu³⁺ for optoelectronic applications

• Marcin Łapiński,
• Jakub Czubek,
• Katarzyna Drozdowska,
• Anna Synak,
• Wojciech Sadowski and
• Barbara Kościelska

Beilstein J. Nanotechnol. 2021, 12, 1271–1278, doi:10.3762/bjnano.12.94

• thermal annealing of the gold thin film. Thermal dewetting of gold film results in spherical gold nanostructures with average dimensions of 50 nm. Both, luminescent TiO2:Eu and TeO2:Eu films were deposited by RF magnetron sputtering from mosaic targets. The morphology of the gold nanostructures was

• , both gasses from Air Products, 99.999%). The used RF power of 60 W resulted in the deposition with a ratio ca. 0.1 Å/s. Luminescent TiO2:Eu or TeO2:Eu films were deposited by RF magnetron sputtering. Metallic Ti–Eu (99.9%) or Te–Eu (99.9%) mosaic targets with a diameter of 50.8 mm were sputtered for

9.1% efficient zinc oxide/silicon solar cells on a 50 μm thick Si absorber

• Rafal Pietruszka,
• Bartlomiej S. Witkowski,
• Monika Ozga,
• Katarzyna Gwozdz,
• Ewa Placzek-Popko and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 766–774, doi:10.3762/bjnano.12.60

• environmentally friendly solar cells are cells based on zinc oxide (ZnO). ZnO thin films can be obtained using many technologies, including molecular beam epitaxy, RF magnetron sputtering, pulsed laser deposition, chemical vapor deposition, and atomic layer deposition (ALD) [3]. ALD attracts the attention of many

A self-powered, flexible ultra-thin Si/ZnO nanowire photodetector as full-spectrum optical sensor and pyroelectric nanogenerator

• Liang Chen,
• Jianqi Dong,
• Miao He and
• Xingfu Wang

Beilstein J. Nanotechnol. 2020, 11, 1623–1630, doi:10.3762/bjnano.11.145

• deposited onto 45 μm p-Si by radio frequency (RF) magnetron sputtering. Next, the sample was placed into a solution of 0.877 g hexamethylenetetramine, 1.372 g Zn(CH3COO)2, and 13 mL ammonium hydroxide to grow ZnO NWs for half an hour via a hydrothermal method in a mechanical convection oven at 90 °C

• . Finally, by RF magnetron sputtering, a 200 nm thick layers of ITO and Cu were deposited on ZnO NWs and p-Si, respectively. Electrical measurements: the measurement setup includes a source meter, an optical platform, a chopper, sample, and a light source. Sample, chopper and light source must be in the

Advanced hybrid nanomaterials

• Andreas Taubert,
• Fabrice Leroux,
• Pierre Rabu and
• Verónica de Zea Bermudez

Beilstein J. Nanotechnol. 2019, 10, 2563–2567, doi:10.3762/bjnano.10.247

• electronic devices” [29]. A combination of deposition techniques was used, chemical vapor deposition for parylene and RF-magnetron sputtering for silver nanoparticles. The content and size of the latter influences the dielectric characteristics of the resulting hybrid films. Such devices may find application

Oblique angle deposition of nickel thin films by high-power impulse magnetron sputtering

• Hamidreza Hajihoseini,
• Movaffaq Kateb,
• Snorri Þorgeir Ingvarsson and
• Jon Tomas Gudmundsson

Beilstein J. Nanotechnol. 2019, 10, 1914–1921, doi:10.3762/bjnano.10.186

• 1.41 nm/min were calculated for HiPIMS deposition at 0°, 35° and 70°, respectively. The dcMS deposition rate is roughly two times that of the HiPIMS rate for the same tilt angles. This is a somewhat lower deposition rate than has been reported for rf magnetron sputtering of Ni in the past [20][21

Nanocomposite–parylene C thin films with high dielectric constant and low losses for future organic electronic devices

• Marwa Mokni,
• Gianluigi Maggioni,
• Abdelkader Kahouli,
• Sara M. Carturan,
• Walter Raniero and
• Alain Sylvestre

Beilstein J. Nanotechnol. 2019, 10, 428–441, doi:10.3762/bjnano.10.42

• deposition and RF-magnetron sputtering for silver deposition. This method yields good dispersion of Ag-containing nanoparticles inside the parylene C polymer matrix. Film composition and structure were studied by using several techniques. It was found that the plasma generated by the RF-magnetron reactor

• increase the dielectric constant of NCPC without degrading its dielectric losses. In this context, this work presents a new strategy to synthesize nanocomposite parylene C materials by a combination of two processes, CVD and RF-magnetron sputtering. The NCPC properties are analyzed in detail by different

• ) and the inorganic compond (silver-containing nanoparticles). This method consists of two associated processes, i.e., primary vacuum-CVD and RF-magnetron sputtering. The deposition process of NCPC involves three successive operations. The process begins with the deposition of parylene C. Some hundreds

Geometrical optimisation of core–shell nanowire arrays for enhanced absorption in thin crystalline silicon heterojunction solar cells

• Robin Vismara,
• Olindo Isabella,
• Andrea Ingenito,
• Fai Tong Si and
• Miro Zeman

Beilstein J. Nanotechnol. 2019, 10, 322–331, doi:10.3762/bjnano.10.31

• , a 100 nm thick transparent tin-doped indium oxide (In2O3:Sn, ITO) was deposited at low power and low temperature, using radio-frequency (RF) magnetron sputtering. The cell area was defined as 5 mm × 5 mm, using a mask during ITO deposition. The reported equivalent thickness values of thin films on

Magnetism and magnetoresistance of single Ni–Cu alloy nanowires

• Andreea Costas,
• Camelia Florica,
• Elena Matei,
• Maria Eugenia Toimil-Molares,
• Ionel Stavarache,
• Andrei Kuncser,
• Victor Kuncser and
• Ionut Enculescu

Beilstein J. Nanotechnol. 2018, 9, 2345–2355, doi:10.3762/bjnano.9.219

• 620 equipment situated into a cleanroom class 100 (ISO EN 14644) with RF magnetron sputtering and thermal vacuum evaporation (using TECTRA equipment). Thus, to contact single Ni–Cu alloy nanowires using a typical EBL process (Zeiss Merlin Compact field-emission scanning electron microscope combined

• , the deposition of Ti and Au contacts (100/200 nm) by RF magnetron sputtering and thermal vacuum evaporation, respectively, was performed. Individual contacted Ni–Cu alloy nanowires are thus obtained. The main steps of the EBL process are shown in Figure 8. The morphological and compositional

Electrospun one-dimensional nanostructures: a new horizon for gas sensing materials

• Muhammad Imran,
• Nunzio Motta and
• Mahnaz Shafiei

Beilstein J. Nanotechnol. 2018, 9, 2128–2170, doi:10.3762/bjnano.9.202

Effect of annealing treatments on CeO₂ grown on TiN and Si substrates by atomic layer deposition

• Silvia Vangelista,
• Rossella Piagge,
• Satu Ek and
• Alessio Lamperti

Beilstein J. Nanotechnol. 2018, 9, 890–899, doi:10.3762/bjnano.9.83

• . Incidentally, such a high-temperature regime is typical of front-end CMOS processes, and could be of relevance to evaluate a possible CeO2 integration at this process step. Deposition of CeO2 thin films in previous studies has been achieved by using a variety of growth techniques, such as RF-magnetron

• sputtering [7], e-beam [16], physical vapor deposition [17], chemical vapor deposition (CVD) [18], and atomic layer deposition (ALD). The latter has been explored by using different precursors, e.g., Ce(thd)4, Ce(iPrCp)3 and Ce(mmp)4) [19][20][21][22][23], obtaining as-deposited film with polycrystalline

Towards 3D crystal orientation reconstruction using automated crystal orientation mapping transmission electron microscopy (ACOM-TEM)

• Aaron Kobler and
• Christian Kübel

Beilstein J. Nanotechnol. 2018, 9, 602–607, doi:10.3762/bjnano.9.56

• starting point for the 3D reconstruction is an ACOM map containing experimental spot diffraction patterns originating from a Pd thin film deposited by radio frequency (RF) magnetron sputtering. The orientation map was acquired on a Philips Tecnai F20 ST TEM instrument which was equipped with a NanoMegas

Bombyx mori silk/titania/gold hybrid materials for photocatalytic water splitting: combining renewable raw materials with clean fuels

• Stefanie Krüger,
• Michael Schwarze,
• Otto Baumann,
• Christina Günter,
• Michael Bruns,
• Christian Kübel,
• Dorothée Vinga Szabó,
• Rafael Meinusch,
• Verónica de Zea Bermudez and
• Andreas Taubert

Beilstein J. Nanotechnol. 2018, 9, 187–204, doi:10.3762/bjnano.9.21

• (Ag) NPs or TiO2 nano-grass films with AuNP for photocatalytic water splitting [29][30]. Matsuoka et al. sputtered TiO2 on a quartz glass plate by radiofrequency (RF) magnetron sputtering deposition followed by Pt deposition to make a TiO2 thin film photocatalyst for water splitting [31]. Finally

Advances and challenges in the field of plasma polymer nanoparticles

• Andrei Choukourov,
• Pavel Pleskunov,
• Daniil Nikitin,
• Valerii Titov,
• Artem Shelemin,
• Mykhailo Vaidulych,
• Anna Kuzminova,
• Pavel Solař,
• Jan Hanuš,
• Jaroslav Kousal,
• Ondřej Kylián,
• Danka Slavínská and
• Hynek Biederman

Beilstein J. Nanotechnol. 2017, 8, 2002–2014, doi:10.3762/bjnano.8.200

• plasma polymerization of volatile monomers or via radio frequency (RF) magnetron sputtering of conventional polymers. The formation of hydrocarbon, fluorocarbon, silicon- and nitrogen-containing plasma polymer nanoparticles as well as core@shell nanoparticles based on plasma polymers is discussed with a

• a result of plasma polymerization of n-hexane and hexamethyldisiloxane (HMDSO) [53] or as a result of RF magnetron sputtering of nylon [54] and poly(tetrafluoroethylene) (PTFE) [55]. One can readily judge the diversity of shape and morphology of the NPs with diameters ranging from tens to hundreds

• arrangement used for the production of NPs by RF magnetron sputtering of nylon [66]. Here, photos of glass substrates taken after the depositions with or without the electrostatic field applied are shown. The nylon-sputtered NPs produce a circular deposit opposing the exit orifice when no voltage is applied

Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications

• Chin-Yi Tsai,
• Jyong-Di Lai,
• Shih-Wei Feng,
• Chien-Jung Huang,
• Chien-Hsun Chen,
• Fann-Wei Yang,
• Hsiang-Chen Wang and
• Li-Wei Tu

Beilstein J. Nanotechnol. 2017, 8, 1939–1945, doi:10.3762/bjnano.8.194

• (101) plane in the hexagonal lattice [12]. Furthermore, hexagonal and pyramidal ZnO composed of the (101) and (001) planes has been synthesized in ionic liquids or obtained on Si(111) substrates by RF magnetron sputtering [13][14]. Nevertheless, the growth of well-faceted pyramidal-like ZnO on silicon

Metal oxide nanostructures: preparation, characterization and functional applications as chemical sensors

• Dario Zappa,
• Angela Bertuna,
• Elisabetta Comini,
• Navpreet Kaur,
• Nicola Poli,
• Veronica Sberveglieri and
• Giorgio Sberveglieri

Beilstein J. Nanotechnol. 2017, 8, 1205–1217, doi:10.3762/bjnano.8.122

• –condensation are the evaporation temperature of the source material and the condensation temperature at which materials start to condensate and grow as 1D nanostructure. An ultrathin layer of gold particles were deposited on alumina substrates with RF magnetron sputtering at 70 W, Ar flow 7 sccm for 5 sec

• ) nanowires directly on the final transducer, starting from a metallic tungsten layer deposited by magnetron sputtering [54]. Metallic tungsten was deposited by RF magnetron sputtering (100 W, 5 × 10−3 mbar, argon plasma, room temperature) via a shadow-mask technique, in order to obtain a 180 nm thin layer on

• by Fang et al. [56], but worked on a thin layer of niobium deposited on alumina substrates by magnetron sputtering. For this reason, we carried out several experiments to obtain the optimal conditions (set out below) for the growth of nanostructures. RF magnetron sputtering was used to deposit a

Thin SnO_x films for surface plasmon resonance enhanced ellipsometric gas sensing (SPREE)

• Daniel Fischer,
• Andreas Hertwig,
• Uwe Beck,
• Volkmar Lohse,
• Detlef Negendank,
• Martin Kormunda and
• Norbert Esser

Beilstein J. Nanotechnol. 2017, 8, 522–529, doi:10.3762/bjnano.8.56

• of 7 mm (Edmund Optics). The prisms were coated on the hypotenuse face with a 45 nm gold layer by using the electron beam evaporation technique (CS 730 ECS, von Ardenne Anlagentechnik GmbH). The additional undoped SnOx add-on layer was then added by using radio frequency (RF) magnetron sputtering (CS

• 730 ECS, von Ardenne Anlagentechnik GmbH) with 13.56 MHz frequency and 200 W power. Here, a commercially available pure SnO2 target (99.9%) obtained from FHR GmbH was used. The target has a diameter of 200 mm and a thickness of 6 mm. For the Fe-doped samples, a home-built RF magnetron sputtering

Template-controlled piezoactivity of ZnO thin films grown via a bioinspired approach

• Nina J. Blumenstein,
• Fabian Streb,
• Stefan Walheim,
• Thomas Schimmel,
• Zaklina Burghard and
• Joachim Bill

Beilstein J. Nanotechnol. 2017, 8, 296–303, doi:10.3762/bjnano.8.32

• the films due to their (002) texture. This also reflects in the value obtained for deff of 3.2 pm V−1 (d33 = 6.4 pm V−1). This value is in the range or higher than the one of other oriented, ZnO thin films prepared by RF magnetron sputtering (2–13 pm V−1) [14] or sol–gel process (5 pm V−1) [15]. Since

• pm V−1 to 6.4 pm V−1. This leads to responses comparable to ZnO structures till now only obtained by RF magnetron sputtering [14] or after high temperature treatment (e.g., at 500 °C) [15]. Experimental Template preparation Boron-doped Si (100) wafers were cleaned first in Milli-Q water and then in

Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties

• Ionel Stavarache,
• Valentin Adrian Maraloiu,
• Petronela Prepelita and
• Gheorghe Iordache

Beilstein J. Nanotechnol. 2016, 7, 1492–1500, doi:10.3762/bjnano.7.142

• ], implantation [26], RF magnetron sputtering [27]. However, for most of these approaches, thermal treatments were necessary after the deposition process in order to obtain high-quality nanostructures based on crystalline Ge [28]. The most important parameter to be finely tuned is the substrate temperature during

• of Ge-nps embedded in SiO2 thin film are summarized. The influence of the temperature on the photodetector test structure, fabricated on substrates at 300, 400 and 500 °C is also described. In Figure 1, the diffractograms recorded of thin films deposited by RF magnetron sputtering on substrates at

A composite structure based on reduced graphene oxide and metal oxide nanomaterials for chemical sensors

• Vardan Galstyan,
• Elisabetta Comini,
• Iskandar Kholmanov,
• Andrea Ponzoni,
• Veronica Sberveglieri,
• Nicola Poli,
• Guido Faglia and
• Giorgio Sberveglieri

Beilstein J. Nanotechnol. 2016, 7, 1421–1427, doi:10.3762/bjnano.7.133

• ZnO nanostructures is similar to that described in our previous work [24]. Thin films of metallic Zn with a thickness of 600 nm were deposited on 2 mm square alumina substrates by means of radio frequency (RF) magnetron sputtering. Thin deposited films of Zn were anodized in 2 M oxalic acid dihydrate

In situ observation of deformation processes in nanocrystalline face-centered cubic metals

• Aaron Kobler,
• Christian Brandl,
• Horst Hahn and
• Christian Kübel

Beilstein J. Nanotechnol. 2016, 7, 572–580, doi:10.3762/bjnano.7.50

• by radio frequency (RF) magnetron sputtering using 2" diameter planar targets with 99.95% purity. TEM grids (holycarbon R2/1 + 2 nm C, Quantifoil) were used as a substrate. The nominal thickness between the holes is 22 nm. Pd was sputtered in 5 cycles of 50.38 s at 60 W constant sputtering power

Characterization of nanostructured ZnO thin films deposited through vacuum evaporation

• Jose Alberto Alvarado,
• Arturo Maldonado,
• Héctor Juarez,
• Mauricio Pacio and
• Rene Perez

Beilstein J. Nanotechnol. 2015, 6, 971–975, doi:10.3762/bjnano.6.100

• ], and RF magnetron sputtering [10]. However, the vacuum evaporation technique is used to deposit worm-form nanostructured thin films. This technique is different from those reported in the literature such as thermal evaporation assisted by inert gases [11], or e-beam evaporation [12]. So this technique

Nanostructuring of GeTiO amorphous films by pulsed laser irradiation

• Valentin S. Teodorescu,
• Cornel Ghica,
• Adrian V. Maraloiu,
• Mihai Vlaicu,
• Andrei Kuncser,
• Magdalena L. Ciurea,
• Ionel Stavarache,
• Ana M. Lepadatu,
• Nicu D. Scarisoreanu,
• Andreea Andrei,
• Valentin Ion and
• Maria Dinescu

Beilstein J. Nanotechnol. 2015, 6, 893–900, doi:10.3762/bjnano.6.92

• obtained by RF magnetron sputtering with 50:50 initial atomic ratio of Ge:TiO2. Laser irradiation was performed by using the fourth harmonic (266 nm) of a Nd:YAG laser. The laser-induced nanostructuring results in two effects, the first one is the appearance of a wave-like topography at the film surface

• GeTiO matrix. Experimental Amorphous GeTiO films with a thickness of 330 nm were deposited by RF magnetron sputtering on Si(100) wafer substrates using Ge:TiO2 with 50:50 atomic ratio. Details on the film deposition are found in [23]. These GeTiO amorphous films were irradiated with laser fluences from

• results from the RF magnetron sputtering films preparation. This shows that about 1/3 of the Ge content is lost from the surface layer affected by the laser radiation, and 2/3 of it can be segregated in amorphous Ge nanoparticles. Discussion The nanostructure formed at the GeTiO film surface by pulsed