Electron beam-based direct writing of nanostructures using a palladium β-ketoesterate complex

• Chinmai Sai Jureddy,
• Krzysztof Maćkosz,
• Aleksandra Butrymowicz-Kubiak,
• Iwona B. Szymańska,
• Patrik Hoffmann and
• Ivo Utke

Beilstein J. Nanotechnol. 2025, 16, 530–539, doi:10.3762/bjnano.16.41

• these k-ratios, Stratagem then recalculates the composition for a thin film (multi)layered structure. The native-oxide Si(100) substrate was accounted for by including a 1 nm thick SiO2 layer of density 2.65 g·cm−3 between the Si substrate and the deposit for the thin film correction. This way, the

• )palladium(II) precursor. The atom color labeling is white: H, grey: C, red: O, and bluish green: Pd [42]. Characteristics of FEB nanoprinted square deposits with [Pd(tbaoac)2]. (a) Secondary electron SEM image of the FEB deposit on a native-oxide Si substrate with indicated AFM scan lines. (b) AFM thickness

Precursor sticking coefficient determination from indented deposits fabricated by electron beam induced deposition

• Alexander Kuprava and
• Michael Huth

Beilstein J. Nanotechnol. 2025, 16, 35–43, doi:10.3762/bjnano.16.4

• dynamics of larger precursor molecules. Methods A dual-beam microscope Nova 600 (FEI Company, the Netherlands) at Goethe University Frankfurt was used for the nanofabrication process. Structures were deposited on a 500 nm thick Au surface on top of a SiO2-terminated Si substrate in order to prevent

Fabrication of hafnium-based nanoparticles and nanostructures using picosecond laser ablation

• Abhishek Das,
• Mangababu Akkanaboina,
• Jagannath Rathod,
• R. Sai Prasad Goud,
• Kanaka Ravi Kumar,
• Raghu C. Reddy,
• Ratheesh Ravendran,
• Katia Vutova,
• S. V. S. Nageswara Rao and
• Venugopal Rao Soma

Beilstein J. Nanotechnol. 2024, 15, 1639–1653, doi:10.3762/bjnano.15.129

• . The high fraction of C indicates the formation of the graphitic shell around HfC NPs in both toluene and anisole. Figure 8 shows the reflectance data of a pristine Si substrate compared to a Si substrate coated with HfNPs-D, HfNPs-T, and HfNPs-A under three different angles of incidence (30°, 45°, and

• under different incident angles: (a) 30°, (b) 45°, and (c) 60°. The black curve is the reflectance spectrum of the reference Si substrate; the red, blue, and green curves represent Hf NPs synthesised in in toluene, anisole, and DW, respectively. PL spectra of NPs laser-ablated in (a) DW, (b) toluene

Ion-induced surface reactions and deposition from Pt(CO)₂Cl₂ and Pt(CO)₂Br₂

• Mohammed K. Abdel-Rahman,
• Patrick M. Eckhert,
• Atul Chaudhary,
• Johnathon M. Johnson,
• Jo-Chi Yu,
• Lisa McElwee-White and
• D. Howard Fairbrother

Beilstein J. Nanotechnol. 2024, 15, 1427–1439, doi:10.3762/bjnano.15.115

• occurs at ≈1 mC/cm2 in Figure 5. Figure 6 and Figure S5 (Supporting Information File 1) show the results of experiments where a Si substrate was exposed to a constant partial pressure of Pt(CO)2Cl2 and a steady Ar+ flux of 5 nA at an incident energy of 800 eV. These conditions represent a situation that

Out-of-plane polarization induces a picosecond photoresponse in rhombohedral stacked bilayer WSe₂

• Guixian Liu,
• Yufan Wang,
• Zhoujuan Xu,
• Zhouxiaosong Zeng,
• Lanyu Huang,
• Cuihuan Ge and
• Xiao Wang

Beilstein J. Nanotechnol. 2024, 15, 1362–1368, doi:10.3762/bjnano.15.109

• monolayers of WSe2 were aligned at a 0° angle to form the 3R phase. The graphene/3R WSe2/graphene heterojunctions were aligned and assembled onto a SiO2/Si substrate by the all-dry transfer method. Au/Cr (50/10 nm) electrodes were patterned using standard electron-beam lithography (EBL, Raith 150 Two) and

Photocatalytic methane oxidation over a TiO₂/SiNWs p–n junction catalyst at room temperature

• Qui Thanh Hoai Ta,
• Luan Minh Nguyen,
• Ngoc Hoi Nguyen,
• Phan Khanh Thinh Nguyen and
• Dai Hai Nguyen

Beilstein J. Nanotechnol. 2024, 15, 1132–1141, doi:10.3762/bjnano.15.92

• (0.1 M), HF (50 wt %) and H2O (2:1:2 vol %) was prepared and kept at 56 °C for 20 min. The clean Si substrate was rapidly immersed in the etching medium and etched by the Ag+ ions for 25 min to obtain 4 µm long SiNWs. Afterwards, remaining Ag on the Si surface was removed using HNO3 (63 wt %) for 10

Effect of wavelength and liquid on formation of Ag, Au, Ag/Au nanoparticles via picosecond laser ablation and SERS-based detection of DMMP

• Sree Satya Bharati Moram,
• Chandu Byram and
• Venugopal Rao Soma

Beilstein J. Nanotechnol. 2024, 15, 1054–1069, doi:10.3762/bjnano.15.86

• imaging due to the nonconductive nature of the FP substrate. FESEM energy-dispersive X-ray spectroscopy (EDX) mapping investigations were conducted on Ag/Au alloy NPs deposited on a Si substrate by drop casting 10 µL to avoid confusion in the data caused by the Au coating. Transmission electron microscopy

• confirms the occurrence of Ag, Au, Na, Cl, C, and O elements on the FP-AgAuN3 substrate, provided in Supporting Information File 1, Figure S4. To confirm the presence of Ag and Au in alloy NPs, an EDX mapping investigation was conducted on AgAuD3 NPs coated on a Si substrate. The color map image of a

Bolometric IR photoresponse based on a 3D micro-nano integrated CNT architecture

• Yasameen Al-Mafrachi,
• Sandeep Yadav,
• Sascha Preu,
• Jörg J. Schneider and
• Oktay Yilmazoglu

Beilstein J. Nanotechnol. 2024, 15, 1030–1040, doi:10.3762/bjnano.15.84

• CNT thermistor wall stabilized by complementary CNT block structures. Two strategically positioned metal electrodes on the Si substrate provide lateral contacts with the vertical CNT bolometer, facilitating effective resistance measurements. Importantly, this CNT structure exhibits remarkable thermal

Water-assisted purification during electron beam-induced deposition of platinum and gold

• Cristiano Glessi,
• Fabian A. Polman and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2024, 15, 884–896, doi:10.3762/bjnano.15.73

• through water-induced oxidation of the Si substrate, (ii) the Pt layer deposited in the patterned area (with a height of circa 60 nm), and (iii) the partially purified halo around the patterned area, which appears on top of the purified area in the lamella projection (Figure 7b, Supporting Information

• patterned area is seen, suggesting further oxidation of the Si substrate (similar to the observation presented in Figure 7) [57]. At the same time, at the perimeter of the BSE range, the formation of a dark halo is observed where the deposition of carbon from contaminants dominates the water-assisted

• from bottom to top: Si substrate, layer of SiOx formed at the interface between the Si bulk material and the deposited Pt, deposited Pt, partially purified halo, and PtCx protection layer. SEM images of square patterns of 150 × 150 nm2 (patterned at 5 keV, 10 µs dwell time, 4 nm pitch, 1, 5, 10, 50

Level set simulation of focused ion beam sputtering of a multilayer substrate

• Alexander V. Rumyantsev,
• Nikolai I. Borgardt,
• Roman L. Volkov and
• Yuri A. Chaplygin

Beilstein J. Nanotechnol. 2024, 15, 733–742, doi:10.3762/bjnano.15.61

• computational grid. The experimental angular dependences of the sputtering yield [24] and YSi(θ) [34] were used for the calculations of Fsp,i with μi values of 0.15 for SiO2 (i =1) [24] and 0.3 for Si (i = 2) [35]. The function at t=0 was specified by the structure of the Si substrate covered by a SiO2 layer

• material from both SiO2 layer and Si substrate was redeposited in a noticeable amount on the left sidewall of the structure, resulting in its characteristic convex surface shape. Clearly visible, almost vertical stripes in Figure 3f–h are primarily due to variations in the concentration of heavier gallium

• distribution of oxygen and silicon atoms, rather than gallium ions as seen in STEM images in Figure 3f–h. The appearance of these stripes was caused by successive milling of the SiO2 layer and Si substrate on the right side of the boxes, when the ion beam was shifted by one step along the x axis. As a result

Elastic modulus of β-Ga₂O₃ nanowires measured by resonance and three-point bending techniques

• Annamarija Trausa,
• Sven Oras,
• Sergei Vlassov,
• Mikk Antsov,
• Tauno Tiirats,
• Andreas Kyritsakis,
• Boris Polyakov and
• Edgars Butanovs

Beilstein J. Nanotechnol. 2024, 15, 704–712, doi:10.3762/bjnano.15.58

• peaks are associated with monoclinic β-Ga2O3 (ICDD-PDF #41–1103), as indicated in Figure 1a, while the Bragg peak at around 33 degrees corresponds to the Si substrate (forbidden Si(200) reflection). Furthermore, transmission electron microscopy (TEM) was used to study the inner crystalline structure of

• , and resonance frequencies were compared before and after the “welding” process (Table S2 in Supporting Information File 1). No significant difference was observed, indicating that the NWs were strongly fixed on the Si substrate and did not require any additional anchoring. The elastic modulus is then

Sidewall angle tuning in focused electron beam-induced processing

• Sangeetha Hari,
• Willem F. van Dorp,
• Johannes J. L. Mulders,
• Piet H. F. Trompenaars,
• Pieter Kruit and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2024, 15, 447–456, doi:10.3762/bjnano.15.40

• coating ensures a strong SE contrast with the carbon deposit due to its significantly higher SE yield, and it prevents the eventual electron beam-induced decomposition of the native oxide layer of the Si substrate. For the carbon deposition, dodecane was used as a precursor. For FEBIE, water was chosen as

• within which SE2 are created is larger in the Si substrate than in the C deposit (2.7 and 1.6 μm, respectively [24]). Note that the thin Au–Pd and Ti coating is ignored here, as most of the interaction volume will be in the underlying Si substrate at 20 keV. Therefore, the width of the distribution of SE

Heat-induced morphological changes in silver nanowires deposited on a patterned silicon substrate

• Elyad Damerchi,
• Sven Oras,
• Edgars Butanovs,
• Allar Liivlaid,
• Mikk Antsov,
• Boris Polyakov,
• Annamarija Trausa,
• Veronika Zadin,
• Andreas Kyritsakis,
• Loïc Vidal,
• Karine Mougin,
• Siim Pikker and
• Sergei Vlassov

Beilstein J. Nanotechnol. 2024, 15, 435–446, doi:10.3762/bjnano.15.39

• comparison with the work by Vigonski et al. [27] who used the same Ag NWs and heating methods for heat-treatment experiments of a flat Si substrate. Two heating schemes were implemented: In the scheme 1 (Figure 2), heating was applied in 10 min cycles at fixed temperatures followed by cooling to room

• thermal expansion of Ag NWs and a substrate during heat treatment from room temperature to 673.15 K were simulated by FEM in Comsol Multiphysics 5.6. The structural configuration involved a pentagonal Ag NW positioned above a rectangular hole on an Si substrate. The NW was securely affixed to the

• substrate, while the overhanging segment retained freedom of movement in all directions. The elastic modulus values for the Ag NW and Si substrate were set to the built-in values in Comsol, accounting for their temperature-dependent nature. More technical details can be found in Supporting Information File

On the mechanism of piezoresistance in nanocrystalline graphite

• Sandeep Kumar,
• Simone Dehm and
• Ralph Krupke

Beilstein J. Nanotechnol. 2024, 15, 376–384, doi:10.3762/bjnano.15.34

• . Experimental Piezoresistance measurements NCG was synthesized on a 300 nm SiO2/Si substrate by spin coating S1805 (1:10 dilution with propylene glycol methyl ether acetate, PGMEA) at 4000 rpm. The spin-coated Si/SiO2 substrate was loaded in a vacuum furnace and annealed at 600 °C for 10 h at 10−6 mbar. The

Modulated critical currents of spin-transfer torque-induced resistance changes in NiCu/Cu multilayered nanowires

• Mengqi Fu,
• Roman Hartmann,
• Julian Braun,
• Sergej Andreev,
• Torsten Pietsch and
• Elke Scheer

Beilstein J. Nanotechnol. 2024, 15, 360–366, doi:10.3762/bjnano.15.32

• vertically patterned magnetic nanowires on a Si substrate. With this approach we fabricated three-dimensional nanowire-based spin valve devices without the need of complex etching processes or additional spacer coating. Through this method, we successfully obtained NiCu/Cu multilayered nanowire arrays with a

• fabricated through a newly developed method, which enables to selectively deposit the magnetic nanowires on the Si substrate and to fabricate three-dimensional (3D) devices contacting a few or even single nanowires without complex etching processes [17] or additional spacer coating [18][19]. Results and

• Discussion The AAO template was fabricated by directly anodizing a ca. 1 µm thick aluminum (Al) film on a silicon (Si) substrate covered with 200 nm SiO2 and patterned Ti/Au (5/50 nm) bottom electrodes. It has pores with a diameter of around 35 nm, an interpore distance of around 50 nm, and a height of

Controllable physicochemical properties of WO_x thin films grown under glancing angle

• Rupam Mandal,
• Aparajita Mandal,
• Alapan Dutta,
• Rengasamy Sivakumar,
• Sanjeev Kumar Srivastava and
• Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

• transport through the same. The I–V characteristics were recorded with a positive bias applied to the p-Si substrate. Figure 6a and Figure 6b show, respectively, the semi-log I–V curves (linear I–V curves are presented in Figure S4 of Supporting Information File 1) of WOx/p-Si heterostructures before and

• regarded as an interlayer between the p-Si substrate and the Ag electrode. The glancing angle (87°) growth of a 6 nm film is likely to sustain a large number of metal (Ag)-induced gap states at the NS-WOx/p-Si interface, leading to Fermi level pinning, the degree of pinning being directly related to film

• damage of the underlying Si substrate, which is otherwise prominent in case of DC sputtering, commonly adopted for WOx growth under GLAD configuration. For a better assessment of the present work and existing literature, a table of comparison (Table S1) is provided in Supporting Information File 1

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS₂ thin films with domains much smaller than the laser spot size

• Felipe Wasem Klein,
• Jean-Roch Huntzinger,
• Vincent Astié,
• Damien Voiry,
• Romain Parret,
• Houssine Makhlouf,
• Sandrine Juillaguet,
• Jean-Manuel Decams,
• Sylvie Contreras,
• Périne Landois,
• Ahmed-Azmi Zahab,
• Jean-Louis Sauvajol and
• Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

• evaluation of the temperature of MoS2 flakes prepared in different ways and that of the Si substrate as functions of the laser power impinging on the sample through a 100× objective (N.A. 0.9). The power was cycled between ≈5 μW and ≈2 mW. The temperature of MoS2 flakes is evaluated from the Stokes/anti

• discussed in this paper were recorded at an excitation wavelength of 532 nm, with a laser working-power close to 0.1 mW, and using a 100× objective (N.A. 0.9), on MoS2 flakes or thin films deposited on SiO2/Si substrate with a SiO2 thickness of 90 ± 6 nm. Application of Raman criteria to characterize MoS2

• contaminations or deposition of others species would have a different impact on the Raman intensity coming from MoS2 in the film and on the one coming from the Si substrate underneath the deposited thin film. It is, thus, expected that the measurements on contaminated or highly defective MoS2 thin films will

Design, fabrication, and characterization of kinetic-inductive force sensors for scanning probe applications

• August K. Roos,
• Ermes Scarano,
• Elisabet K. Arvidsson,
• Erik Holmgren and
• David B. Haviland

Beilstein J. Nanotechnol. 2024, 15, 242–255, doi:10.3762/bjnano.15.23

• meets the Si substrate. The FEM model gives the distribution of strain at the surface. Figure 2a shows the distribution of longitudinal strain εxx(x, y) for the fundamental bending mode of interest. The strain is normalized to its maximum value at the center of the clamping line. Figure 2b displays this

• 60 s. With the front side of the wafer protected, we flip over the wafer and etch through the Si-N using the same CHF3/SF6 process as in step (f) and the etch mask defined in step (c). We then use a Bosch process to etch through most of the Si substrate (approximately 450 μm deep) with an etch rate

• etch under the triangular silicon nitride plate and form a very straight clamping line to the Si substrate. However, the KOH etch is slow compared to the isotropic RIE process and attacks the Nb-Ti-N superconducting film. An additional lithography step was needed to protect the superconducting circuit

Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO₂ substrates

• Aleksandra Szkudlarek,
• Jan M. Michalik,
• Inés Serrano-Esparza,
• Zdeněk Nováček,
• Veronika Novotná,
• Piotr Ozga,
• Czesław Kapusta and
• José María De Teresa

Beilstein J. Nanotechnol. 2024, 15, 190–198, doi:10.3762/bjnano.15.18

• estimated by the analysis of the D/G line intensity ratio [29][30]. Spectra of the underlying SiO2/Si substrate (red line), nonexposed (green line), and exposed graphene flakes (blue line) are collected in Figure 2D. Most of the graphene flake remains unaltered – the G/2D ratio is close to ½ as expected for

• . Complementary studies performed using both in situ and ex situ AFM reveal the modification in SiO2/Si substrate topography. Our results are important not only for applications of water-assisted FEBIE to etching carbon allotropes and SiO2 materials but also in other fields. For example, where electron-driven

• measurements of the etched lines on the SiO2/Si substrate as a function of the dwell time: A) AFM profiles of lines etched with different dwell times (td = 1, 10, and100 μs); B) 3D AFM image of the SiO2 surface. Exposure time and dose values for the etched lines. Author Contributions The manuscript was

Measurements of dichroic bow-tie antenna arrays with integrated cold-electron bolometers using YBCO oscillators

• Leonid S. Revin,
• Dmitry A. Pimanov,
• Alexander V. Chiginev,
• Anton V. Blagodatkin,
• Viktor O. Zbrozhek,
• Andrey V. Samartsev,
• Anastasia N. Orlova,
• Dmitry V. Masterov,
• Alexey E. Parafin,
• Victoria Yu. Safonova,
• Anna V. Gordeeva,
• Andrey L. Pankratov,
• Leonid S. Kuzmin,
• Anatolie S. Sidorenko,
• Silvia Masi and
• Paolo de Bernardis

Beilstein J. Nanotechnol. 2024, 15, 26–36, doi:10.3762/bjnano.15.3

• of the antenna array is 340 µm in both directions for 210 and 240 GHz channels. The frequency response of the two-frequency receiving matrix with a Si substrate thickness of 260 µm is shown in Figure 2 (solid curves). To compare the calculated response with the experimental results, we also added

• curves for a Si substrate thickness of 290 µm (dashed curves). As a result of frequency response optimizations, the following characteristics were obtained: The bandwidth for the 210 GHz channel at half power level is 25.46 GHz, and the maximum absorption occurs at a frequency of 212.1 GHz; the bandwidth

• of frequency bands between arrays of antennas can be seen. We should note here that a certain frequency shift of the channels is due to improper Si substrate thickness (available in the clean room at that time), which was about 0.29 mm instead of the optimized 0.26 mm (see modelling results in Figure

TEM sample preparation of lithographically patterned permalloy nanostructures on silicon nitride membranes

• Joshua Williams,
• Michael I. Faley,
• Joseph Vimal Vas,
• Peng-Han Lu and
• Rafal E. Dunin-Borkowski

Beilstein J. Nanotechnol. 2024, 15, 1–12, doi:10.3762/bjnano.15.1

• , we initially fabricated the nanostructures on a 200 µm thick Si substrate with 100 nm thick SiN buffer layers on both sides. The buffer layers were deposited with low-pressure CVD to ensure stress-free films. The fabrication process is shown in Figure 10. First, we made the nanostructure using lift

Spatial variations of conductivity of self-assembled monolayers of dodecanethiol on Au/mica and Au/Si substrates

• Julian Skolaut,
• Jędrzej Tepper,
• Federica Galli,
• Wulf Wulfhekel and
• Jan M. van Ruitenbeek

Beilstein J. Nanotechnol. 2023, 14, 1169–1177, doi:10.3762/bjnano.14.97

• S2a). In contrast to the Au/mica surface, the Au/Si substrate exhibits a rougher surface, as seen in Figure 2c, in agreement with the difference in growth mode of Au films on the two substrates. For mica, epitaxial growth is obtained [16][17], while Au on Si/SiO2 forms a granular film [18]. Although

• presents measurements of DDT SAMs on a Au/Si substrate. Comparing topography (Figure 4a) and current map (Figure 4b) to the ones of the bare Au/Si substrate, close similarities can be seen. After coverage of the surface by the SAM, the surface retains the same roughness with only small flat areas. Although

• variation in the current is governed by the structure of the substrate, which remains qualitatively unchanged by the deposition of the SAM. For the Au/Si substrate, the rough topography yields only small areas on the surface on which comparable conductive properties can be expected. Without information on

Spatial mapping of photovoltage and light-induced displacement of on-chip coupled piezo/photodiodes by Kelvin probe force microscopy under modulated illumination

• Zeinab Eftekhari,
• Nasim Rezaei,
• Hidde Stokkel,
• Jian-Yao Zheng,
• Andrea Cerreta,
• Ilka Hermes,
• Minh Nguyen,
• Guus Rijnders and
• Rebecca Saive

Beilstein J. Nanotechnol. 2023, 14, 1059–1067, doi:10.3762/bjnano.14.87

• membrane with a maximum of 946 pm, while decreasing to a few picometers at the side edges. The decay of displacement from the center to the edge is expected from the clamping effect at the edges, where the Si substrate is thicker [38]. The measured CPD shift in Figure 3b indicates that the photovoltage

SERS performance of GaN/Ag substrates fabricated by Ag coating of GaN platforms

• Magdalena A. Zając,
• Bogusław Budner,
• Malwina Liszewska,
• Bartosz Bartosewicz,
• Łukasz Gutowski,
• Jan L. Weyher and
• Bartłomiej J. Jankiewicz

Beilstein J. Nanotechnol. 2023, 14, 552–564, doi:10.3762/bjnano.14.46

• , we assumed the same Ag layer thickness of 215 ± 7 nm for all samples, equivalent to the thickness of the Ag layer deposited on a flat Si substrate at room temperature. The given thickness corresponds to the amount of deposited Ag determined by the number of laser pulses and does not reflect changes

A mid-infrared focusing grating coupler with a single circular arc element based on germanium on silicon

• Xiaojun Zhu,
• Shuai Li,
• Ang Sun,
• Yongquan Pan,
• Wen Liu,
• Yue Wu,
• Guoan Zhang and
• Yuechun Shi

Beilstein J. Nanotechnol. 2023, 14, 478–484, doi:10.3762/bjnano.14.38

• waveguide with a focusing subwavelength grating MIR grating coupler, the difficulty of preparation has been considerably reduced. Principle and Design Figure 1a shows the tilted view of the proposed MIR FGC. The Ge waveguide layer is built onto the Si substrate forming the Ge-on-Si structure. The proposed