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Search for "Si substrate" in Full Text gives 203 result(s) in Beilstein Journal of Nanotechnology. Showing first 200.

Focused ion beam-induced platinum deposition with a low-temperature cesium ion source

  • Thomas Henning Loeber,
  • Bert Laegel,
  • Meltem Sezen,
  • Feray Bakan Misirlioglu,
  • Edgar J. D. Vredenbregt and
  • Yang Li

Beilstein J. Nanotechnol. 2025, 16, 910–920, doi:10.3762/bjnano.16.69

Graphical Abstract
  • density of 6 pA·μm−2 . Before deposition, a small part of the Si substrate was gently milled with the Cs+ FIB at 16 kV, such that any native oxide and other contaminations were completely removed at this location. With that, the influence of oxygen molecules on the deposited layer can be excluded. The
  • from the data provided by TEM-EDS analysis. An exemplary EDS map for 16 kV 54 pA Cs+ FIBID-Pt is shown in Figure 5. The Si-rich region shown as the red area in the upper-right corner of the Si map corresponds to the Si substrate. Before the TEM sample preparation process, a C layer was deposited on top
  • and O. While the highest concentration of Pt and C can be found within the actual shape, the Cs and O distribution correspond to the bubble area in the SEM image. SRIM simulation showing the penetration of Ga+ and Cs+ ions into a Si substrate at different acceleration voltages. Cs+ ions at a voltage
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Published 16 Jun 2025

Characterization of ion track-etched conical nanopores in thermal and PECVD SiO2 using small angle X-ray scattering

  • Shankar Dutt,
  • Rudradeep Chakraborty,
  • Christian Notthoff,
  • Pablo Mota-Santiago,
  • Christina Trautmann and
  • Patrick Kluth

Beilstein J. Nanotechnol. 2025, 16, 899–909, doi:10.3762/bjnano.16.68

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  • can only be grown on a Si substrate. PECVD, in contrast, allows for the deposition at much lower temperatures on many different substrates with control over the film properties, such as stoichiometry, density, refractive index, and residual stress. As these fabrication methods involve fundamentally
  • as is, and the Si substrate was not removed before SAXS measurements. The sample-to-detector distances ranged between 7.2 and 7.6 m. Data collection was performed using Pilatus 1M and Pilatus 2M detectors during different measurement cycles. A silver behenate (AgBeh) standard was used to calibrate
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Published 12 Jun 2025

Ar+ implantation-induced tailoring of RF-sputtered ZnO films: structural, morphological, and optical properties

  • Manu Bura,
  • Divya Gupta,
  • Arun Kumar and
  • Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 872–886, doi:10.3762/bjnano.16.66

Graphical Abstract
  • the Si substrate, the oxygen content contains contributions from both SiO2 and ZnO. The variations in grain size and RMS roughness of ZnO films with increase in ion fluence follow the same trend in AFM and FESEM analyses, but with different magnitudes. This is because of the greater sensitivity of AFM
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Published 11 Jun 2025

Synchrotron X-ray photoelectron spectroscopy study of sodium adsorption on vertically arranged MoS2 layers coated with pyrolytic carbon

  • Alexander V. Okotrub,
  • Anastasiya D. Fedorenko,
  • Anna A. Makarova,
  • Veronica S. Sulyaeva,
  • Yuliya V. Fedoseeva and
  • Lyubov G. Bulusheva

Beilstein J. Nanotechnol. 2025, 16, 847–859, doi:10.3762/bjnano.16.64

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  • decomposition residues. Results and Discussion Figure 1a shows the schematic diagram of the synthesis route of a hybrid film consisting of MoS2 coated with PyC. A molybdenum layer is deposited on a SiO2/Si substrate by magnetron sputtering for a short time of 10 s. This layer interacts with sulfur vapor at a
  • wet transfer method (see the Experimental section for details). The resulting hybrid, designated PyC-MoS2, together with a surface-cleaned MoS2/SiO2/Si sample and a PyC film transferred onto a SiO2/Si substrate, were used to comparatively study the ability to adsorb and accumulate evaporated sodium
  • SEM image of PyC transferred onto the SiO2/Si substrate also shows a uniform film surface (Figure 1e). The Raman spectrum of the MoS2 film contains two strong peaks at 382.6 and 408.9 cm−1 (Figure 2a) corresponding to the E12g mode and the A1g mode, respectively, of 2H-MoS2 [33]. The difference
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Published 10 Jun 2025

Morphology and properties of pyrite nanoparticles obtained by pulsed laser ablation in liquid and thin films for photodetection

  • Akshana Parameswaran Sreekala,
  • Bindu Krishnan,
  • Rene Fabian Cienfuegos Pelaes,
  • David Avellaneda Avellaneda,
  • Josué Amílcar Aguilar-Martínez and
  • Sadasivan Shaji

Beilstein J. Nanotechnol. 2025, 16, 785–805, doi:10.3762/bjnano.16.60

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  • synthesized by PLAL. FeS2 NPs were successfully synthesized in five different solvents, along with a minor phase of iron sulfide (FeS). Additionally, by combining electrophoretic deposition and spin-coating techniques, thin film photodiodes of FeS2 were fabricated on an n-type Si substrate utilizing the
  • its ability to absorb UV wavelengths [32]. This concept was used to fabricate photodetectors (PDs) using pyrite NPs on Si substrate as it inherently has the advantages of exceptional photo-absorption, high mobility, and high absorption coefficient as initially mentioned. Self-powering PDs have a
  • [35], the p-type nature of FeS2 was identified. Based on this, an n-type Si (n-Si) substrate was chosen to achieve the photodiode structure. Well cleaned n-type silicon substrates were used as the anode and the cathode in the EPD setup. With a 4.5 mm gap between them, the electrodes were positioned
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Published 03 Jun 2025

Thickness dependent oxidation in CrCl3: a scanning X-ray photoemission and Kelvin probe microscopies study

  • Shafaq Kazim,
  • Rahul Parmar,
  • Maryam Azizinia,
  • Matteo Amati,
  • Muhammad Rauf,
  • Andrea Di Cicco,
  • Seyed Javid Rezvani,
  • Dario Mastrippolito,
  • Luca Ottaviano,
  • Tomasz Klimczuk,
  • Luca Gregoratti and
  • Roberto Gunnella

Beilstein J. Nanotechnol. 2025, 16, 749–761, doi:10.3762/bjnano.16.58

Graphical Abstract
  • optical microscope. Therefore, we opted for an alternative substrate, indium tin oxide (ITO), to conduct the SPEM measurements on thinner layers. Figure 1 gives a direct comparison of AFM images and O.C. on the 1 nm SiO2/Si substrate. Optical contrast, AFM image, and a complete series of profiles showing
  • particular flake consisting of two different main regions on the SiO2 (1 nm)/Si substrate. Figure 5a shows the Cl 2p map after background correction at a binding energy of about 200 ± 4 eV. We know from a previous work that at this energy the Cl 2p core level only shows the main component at 199.5 eV [8]. In
  • redrawn from [31]. Survey spectra of exfoliated CrCl3 flakes on native Si oxide substrate with different beam modes at RT. From top to bottom: focused beam, defocused beam, and OSA mode of operation. Cl 2p and Cr 2p3/2 core level SPEM maps with focused beam at RT on 1 nm SiO2/Si substrate. (a) Cl 2p map
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Published 02 Jun 2025

Nanostructured materials characterized by scanning photoelectron spectromicroscopy

  • Matteo Amati,
  • Alexey S. Shkvarin,
  • Alexander I. Merentsov,
  • Alexander N. Titov,
  • María Taeño,
  • David Maestre,
  • Sarah R. McKibbin,
  • Zygmunt Milosz,
  • Ana Cremades,
  • Rainer Timm and
  • Luca Gregoratti

Beilstein J. Nanotechnol. 2025, 16, 700–710, doi:10.3762/bjnano.16.54

Graphical Abstract
  • few nanometers along the entire nanowire. For operando SPEM measurements, nanowires were transferred onto a prepatterned device template with flat, individually contacted Au/Ti electrodes deposited onto a SiO2/Si substrate, separated by a 1.5 µm wide insulating gap. Optical microscopy images of the
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Published 23 May 2025

Electron beam-based direct writing of nanostructures using a palladium β-ketoesterate complex

  • Chinmai Sai Jureddy,
  • Krzysztof Maćkosz,
  • Aleksandra Butrymowicz-Kubiak,
  • Iwona B. Szymańska,
  • Patrik Hoffmann and
  • Ivo Utke

Beilstein J. Nanotechnol. 2025, 16, 530–539, doi:10.3762/bjnano.16.41

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  • these k-ratios, Stratagem then recalculates the composition for a thin film (multi)layered structure. The native-oxide Si(100) substrate was accounted for by including a 1 nm thick SiO2 layer of density 2.65 g·cm−3 between the Si substrate and the deposit for the thin film correction. This way, the
  • )palladium(II) precursor. The atom color labeling is white: H, grey: C, red: O, and bluish green: Pd [42]. Characteristics of FEB nanoprinted square deposits with [Pd(tbaoac)2]. (a) Secondary electron SEM image of the FEB deposit on a native-oxide Si substrate with indicated AFM scan lines. (b) AFM thickness
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Published 15 Apr 2025

Precursor sticking coefficient determination from indented deposits fabricated by electron beam induced deposition

  • Alexander Kuprava and
  • Michael Huth

Beilstein J. Nanotechnol. 2025, 16, 35–43, doi:10.3762/bjnano.16.4

Graphical Abstract
  • dynamics of larger precursor molecules. Methods A dual-beam microscope Nova 600 (FEI Company, the Netherlands) at Goethe University Frankfurt was used for the nanofabrication process. Structures were deposited on a 500 nm thick Au surface on top of a SiO2-terminated Si substrate in order to prevent
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Published 13 Jan 2025

Fabrication of hafnium-based nanoparticles and nanostructures using picosecond laser ablation

  • Abhishek Das,
  • Mangababu Akkanaboina,
  • Jagannath Rathod,
  • R. Sai Prasad Goud,
  • Kanaka Ravi Kumar,
  • Raghu C. Reddy,
  • Ratheesh Ravendran,
  • Katia Vutova,
  • S. V. S. Nageswara Rao and
  • Venugopal Rao Soma

Beilstein J. Nanotechnol. 2024, 15, 1639–1653, doi:10.3762/bjnano.15.129

Graphical Abstract
  • . The high fraction of C indicates the formation of the graphitic shell around HfC NPs in both toluene and anisole. Figure 8 shows the reflectance data of a pristine Si substrate compared to a Si substrate coated with HfNPs-D, HfNPs-T, and HfNPs-A under three different angles of incidence (30°, 45°, and
  • under different incident angles: (a) 30°, (b) 45°, and (c) 60°. The black curve is the reflectance spectrum of the reference Si substrate; the red, blue, and green curves represent Hf NPs synthesised in in toluene, anisole, and DW, respectively. PL spectra of NPs laser-ablated in (a) DW, (b) toluene
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Published 18 Dec 2024

Ion-induced surface reactions and deposition from Pt(CO)2Cl2 and Pt(CO)2Br2

  • Mohammed K. Abdel-Rahman,
  • Patrick M. Eckhert,
  • Atul Chaudhary,
  • Johnathon M. Johnson,
  • Jo-Chi Yu,
  • Lisa McElwee-White and
  • D. Howard Fairbrother

Beilstein J. Nanotechnol. 2024, 15, 1427–1439, doi:10.3762/bjnano.15.115

Graphical Abstract
  • occurs at ≈1 mC/cm2 in Figure 5. Figure 6 and Figure S5 (Supporting Information File 1) show the results of experiments where a Si substrate was exposed to a constant partial pressure of Pt(CO)2Cl2 and a steady Ar+ flux of 5 nA at an incident energy of 800 eV. These conditions represent a situation that
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Published 19 Nov 2024

Out-of-plane polarization induces a picosecond photoresponse in rhombohedral stacked bilayer WSe2

  • Guixian Liu,
  • Yufan Wang,
  • Zhoujuan Xu,
  • Zhouxiaosong Zeng,
  • Lanyu Huang,
  • Cuihuan Ge and
  • Xiao Wang

Beilstein J. Nanotechnol. 2024, 15, 1362–1368, doi:10.3762/bjnano.15.109

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  • monolayers of WSe2 were aligned at a 0° angle to form the 3R phase. The graphene/3R WSe2/graphene heterojunctions were aligned and assembled onto a SiO2/Si substrate by the all-dry transfer method. Au/Cr (50/10 nm) electrodes were patterned using standard electron-beam lithography (EBL, Raith 150 Two) and
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Published 06 Nov 2024

Photocatalytic methane oxidation over a TiO2/SiNWs p–n junction catalyst at room temperature

  • Qui Thanh Hoai Ta,
  • Luan Minh Nguyen,
  • Ngoc Hoi Nguyen,
  • Phan Khanh Thinh Nguyen and
  • Dai Hai Nguyen

Beilstein J. Nanotechnol. 2024, 15, 1132–1141, doi:10.3762/bjnano.15.92

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  • (0.1 M), HF (50 wt %) and H2O (2:1:2 vol %) was prepared and kept at 56 °C for 20 min. The clean Si substrate was rapidly immersed in the etching medium and etched by the Ag+ ions for 25 min to obtain 4 µm long SiNWs. Afterwards, remaining Ag on the Si surface was removed using HNO3 (63 wt %) for 10
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Published 02 Sep 2024

Effect of wavelength and liquid on formation of Ag, Au, Ag/Au nanoparticles via picosecond laser ablation and SERS-based detection of DMMP

  • Sree Satya Bharati Moram,
  • Chandu Byram and
  • Venugopal Rao Soma

Beilstein J. Nanotechnol. 2024, 15, 1054–1069, doi:10.3762/bjnano.15.86

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  • imaging due to the nonconductive nature of the FP substrate. FESEM energy-dispersive X-ray spectroscopy (EDX) mapping investigations were conducted on Ag/Au alloy NPs deposited on a Si substrate by drop casting 10 µL to avoid confusion in the data caused by the Au coating. Transmission electron microscopy
  • confirms the occurrence of Ag, Au, Na, Cl, C, and O elements on the FP-AgAuN3 substrate, provided in Supporting Information File 1, Figure S4. To confirm the presence of Ag and Au in alloy NPs, an EDX mapping investigation was conducted on AgAuD3 NPs coated on a Si substrate. The color map image of a
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Published 19 Aug 2024

Bolometric IR photoresponse based on a 3D micro-nano integrated CNT architecture

  • Yasameen Al-Mafrachi,
  • Sandeep Yadav,
  • Sascha Preu,
  • Jörg J. Schneider and
  • Oktay Yilmazoglu

Beilstein J. Nanotechnol. 2024, 15, 1030–1040, doi:10.3762/bjnano.15.84

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  • CNT thermistor wall stabilized by complementary CNT block structures. Two strategically positioned metal electrodes on the Si substrate provide lateral contacts with the vertical CNT bolometer, facilitating effective resistance measurements. Importantly, this CNT structure exhibits remarkable thermal
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Published 15 Aug 2024

Water-assisted purification during electron beam-induced deposition of platinum and gold

  • Cristiano Glessi,
  • Fabian A. Polman and
  • Cornelis W. Hagen

Beilstein J. Nanotechnol. 2024, 15, 884–896, doi:10.3762/bjnano.15.73

Graphical Abstract
  • through water-induced oxidation of the Si substrate, (ii) the Pt layer deposited in the patterned area (with a height of circa 60 nm), and (iii) the partially purified halo around the patterned area, which appears on top of the purified area in the lamella projection (Figure 7b, Supporting Information
  • patterned area is seen, suggesting further oxidation of the Si substrate (similar to the observation presented in Figure 7) [57]. At the same time, at the perimeter of the BSE range, the formation of a dark halo is observed where the deposition of carbon from contaminants dominates the water-assisted
  • from bottom to top: Si substrate, layer of SiOx formed at the interface between the Si bulk material and the deposited Pt, deposited Pt, partially purified halo, and PtCx protection layer. SEM images of square patterns of 150 × 150 nm2 (patterned at 5 keV, 10 µs dwell time, 4 nm pitch, 1, 5, 10, 50
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Published 18 Jul 2024

Level set simulation of focused ion beam sputtering of a multilayer substrate

  • Alexander V. Rumyantsev,
  • Nikolai I. Borgardt,
  • Roman L. Volkov and
  • Yuri A. Chaplygin

Beilstein J. Nanotechnol. 2024, 15, 733–742, doi:10.3762/bjnano.15.61

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  • computational grid. The experimental angular dependences of the sputtering yield [24] and YSi(θ) [34] were used for the calculations of Fsp,i with μi values of 0.15 for SiO2 (i =1) [24] and 0.3 for Si (i = 2) [35]. The function at t=0 was specified by the structure of the Si substrate covered by a SiO2 layer
  • material from both SiO2 layer and Si substrate was redeposited in a noticeable amount on the left sidewall of the structure, resulting in its characteristic convex surface shape. Clearly visible, almost vertical stripes in Figure 3f–h are primarily due to variations in the concentration of heavier gallium
  • distribution of oxygen and silicon atoms, rather than gallium ions as seen in STEM images in Figure 3f–h. The appearance of these stripes was caused by successive milling of the SiO2 layer and Si substrate on the right side of the boxes, when the ion beam was shifted by one step along the x axis. As a result
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Published 24 Jun 2024

Elastic modulus of β-Ga2O3 nanowires measured by resonance and three-point bending techniques

  • Annamarija Trausa,
  • Sven Oras,
  • Sergei Vlassov,
  • Mikk Antsov,
  • Tauno Tiirats,
  • Andreas Kyritsakis,
  • Boris Polyakov and
  • Edgars Butanovs

Beilstein J. Nanotechnol. 2024, 15, 704–712, doi:10.3762/bjnano.15.58

Graphical Abstract
  • peaks are associated with monoclinic β-Ga2O3 (ICDD-PDF #41–1103), as indicated in Figure 1a, while the Bragg peak at around 33 degrees corresponds to the Si substrate (forbidden Si(200) reflection). Furthermore, transmission electron microscopy (TEM) was used to study the inner crystalline structure of
  • , and resonance frequencies were compared before and after the “welding” process (Table S2 in Supporting Information File 1). No significant difference was observed, indicating that the NWs were strongly fixed on the Si substrate and did not require any additional anchoring. The elastic modulus is then
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Published 18 Jun 2024

Sidewall angle tuning in focused electron beam-induced processing

  • Sangeetha Hari,
  • Willem F. van Dorp,
  • Johannes J. L. Mulders,
  • Piet H. F. Trompenaars,
  • Pieter Kruit and
  • Cornelis W. Hagen

Beilstein J. Nanotechnol. 2024, 15, 447–456, doi:10.3762/bjnano.15.40

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  • coating ensures a strong SE contrast with the carbon deposit due to its significantly higher SE yield, and it prevents the eventual electron beam-induced decomposition of the native oxide layer of the Si substrate. For the carbon deposition, dodecane was used as a precursor. For FEBIE, water was chosen as
  • within which SE2 are created is larger in the Si substrate than in the C deposit (2.7 and 1.6 μm, respectively [24]). Note that the thin Au–Pd and Ti coating is ignored here, as most of the interaction volume will be in the underlying Si substrate at 20 keV. Therefore, the width of the distribution of SE
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Published 23 Apr 2024

Heat-induced morphological changes in silver nanowires deposited on a patterned silicon substrate

  • Elyad Damerchi,
  • Sven Oras,
  • Edgars Butanovs,
  • Allar Liivlaid,
  • Mikk Antsov,
  • Boris Polyakov,
  • Annamarija Trausa,
  • Veronika Zadin,
  • Andreas Kyritsakis,
  • Loïc Vidal,
  • Karine Mougin,
  • Siim Pikker and
  • Sergei Vlassov

Beilstein J. Nanotechnol. 2024, 15, 435–446, doi:10.3762/bjnano.15.39

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  • comparison with the work by Vigonski et al. [27] who used the same Ag NWs and heating methods for heat-treatment experiments of a flat Si substrate. Two heating schemes were implemented: In the scheme 1 (Figure 2), heating was applied in 10 min cycles at fixed temperatures followed by cooling to room
  • thermal expansion of Ag NWs and a substrate during heat treatment from room temperature to 673.15 K were simulated by FEM in Comsol Multiphysics 5.6. The structural configuration involved a pentagonal Ag NW positioned above a rectangular hole on an Si substrate. The NW was securely affixed to the
  • substrate, while the overhanging segment retained freedom of movement in all directions. The elastic modulus values for the Ag NW and Si substrate were set to the built-in values in Comsol, accounting for their temperature-dependent nature. More technical details can be found in Supporting Information File
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Published 22 Apr 2024

On the mechanism of piezoresistance in nanocrystalline graphite

  • Sandeep Kumar,
  • Simone Dehm and
  • Ralph Krupke

Beilstein J. Nanotechnol. 2024, 15, 376–384, doi:10.3762/bjnano.15.34

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  • . Experimental Piezoresistance measurements NCG was synthesized on a 300 nm SiO2/Si substrate by spin coating S1805 (1:10 dilution with propylene glycol methyl ether acetate, PGMEA) at 4000 rpm. The spin-coated Si/SiO2 substrate was loaded in a vacuum furnace and annealed at 600 °C for 10 h at 10−6 mbar. The
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Published 08 Apr 2024

Modulated critical currents of spin-transfer torque-induced resistance changes in NiCu/Cu multilayered nanowires

  • Mengqi Fu,
  • Roman Hartmann,
  • Julian Braun,
  • Sergej Andreev,
  • Torsten Pietsch and
  • Elke Scheer

Beilstein J. Nanotechnol. 2024, 15, 360–366, doi:10.3762/bjnano.15.32

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  • vertically patterned magnetic nanowires on a Si substrate. With this approach we fabricated three-dimensional nanowire-based spin valve devices without the need of complex etching processes or additional spacer coating. Through this method, we successfully obtained NiCu/Cu multilayered nanowire arrays with a
  • fabricated through a newly developed method, which enables to selectively deposit the magnetic nanowires on the Si substrate and to fabricate three-dimensional (3D) devices contacting a few or even single nanowires without complex etching processes [17] or additional spacer coating [18][19]. Results and
  • Discussion The AAO template was fabricated by directly anodizing a ca. 1 µm thick aluminum (Al) film on a silicon (Si) substrate covered with 200 nm SiO2 and patterned Ti/Au (5/50 nm) bottom electrodes. It has pores with a diameter of around 35 nm, an interpore distance of around 50 nm, and a height of
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Published 03 Apr 2024

Controllable physicochemical properties of WOx thin films grown under glancing angle

  • Rupam Mandal,
  • Aparajita Mandal,
  • Alapan Dutta,
  • Rengasamy Sivakumar,
  • Sanjeev Kumar Srivastava and
  • Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

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  • transport through the same. The I–V characteristics were recorded with a positive bias applied to the p-Si substrate. Figure 6a and Figure 6b show, respectively, the semi-log I–V curves (linear I–V curves are presented in Figure S4 of Supporting Information File 1) of WOx/p-Si heterostructures before and
  • regarded as an interlayer between the p-Si substrate and the Ag electrode. The glancing angle (87°) growth of a 6 nm film is likely to sustain a large number of metal (Ag)-induced gap states at the NS-WOx/p-Si interface, leading to Fermi level pinning, the degree of pinning being directly related to film
  • damage of the underlying Si substrate, which is otherwise prominent in case of DC sputtering, commonly adopted for WOx growth under GLAD configuration. For a better assessment of the present work and existing literature, a table of comparison (Table S1) is provided in Supporting Information File 1
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Published 02 Apr 2024

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS2 thin films with domains much smaller than the laser spot size

  • Felipe Wasem Klein,
  • Jean-Roch Huntzinger,
  • Vincent Astié,
  • Damien Voiry,
  • Romain Parret,
  • Houssine Makhlouf,
  • Sandrine Juillaguet,
  • Jean-Manuel Decams,
  • Sylvie Contreras,
  • Périne Landois,
  • Ahmed-Azmi Zahab,
  • Jean-Louis Sauvajol and
  • Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

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  • evaluation of the temperature of MoS2 flakes prepared in different ways and that of the Si substrate as functions of the laser power impinging on the sample through a 100× objective (N.A. 0.9). The power was cycled between ≈5 μW and ≈2 mW. The temperature of MoS2 flakes is evaluated from the Stokes/anti
  • discussed in this paper were recorded at an excitation wavelength of 532 nm, with a laser working-power close to 0.1 mW, and using a 100× objective (N.A. 0.9), on MoS2 flakes or thin films deposited on SiO2/Si substrate with a SiO2 thickness of 90 ± 6 nm. Application of Raman criteria to characterize MoS2
  • contaminations or deposition of others species would have a different impact on the Raman intensity coming from MoS2 in the film and on the one coming from the Si substrate underneath the deposited thin film. It is, thus, expected that the measurements on contaminated or highly defective MoS2 thin films will
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Published 07 Mar 2024

Design, fabrication, and characterization of kinetic-inductive force sensors for scanning probe applications

  • August K. Roos,
  • Ermes Scarano,
  • Elisabet K. Arvidsson,
  • Erik Holmgren and
  • David B. Haviland

Beilstein J. Nanotechnol. 2024, 15, 242–255, doi:10.3762/bjnano.15.23

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  • meets the Si substrate. The FEM model gives the distribution of strain at the surface. Figure 2a shows the distribution of longitudinal strain εxx(x, y) for the fundamental bending mode of interest. The strain is normalized to its maximum value at the center of the clamping line. Figure 2b displays this
  • 60 s. With the front side of the wafer protected, we flip over the wafer and etch through the Si-N using the same CHF3/SF6 process as in step (f) and the etch mask defined in step (c). We then use a Bosch process to etch through most of the Si substrate (approximately 450 μm deep) with an etch rate
  • etch under the triangular silicon nitride plate and form a very straight clamping line to the Si substrate. However, the KOH etch is slow compared to the isotropic RIE process and attacks the Nb-Ti-N superconducting film. An additional lithography step was needed to protect the superconducting circuit
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Published 15 Feb 2024
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