Precursor sticking coefficient determination from indented deposits fabricated by electron beam induced deposition

• Alexander Kuprava and
• Michael Huth

Beilstein J. Nanotechnol. 2025, 16, 35–43, doi:10.3762/bjnano.16.4

• described by a Gaussian shape function: where f0 is the maximum electron flux at r = 0 and a is the standard deviation. The width of the Gaussian is defined as . The growth rate under electron irradiation is proportional to the local electron flux, the dissociation cross section, and the volume V of the

• deposited non-volatile fragment. Under stationary steady-state deposition conditions, the growth rate can be expressed as: Under such conditions the final shape of the deposit is a product of the radially resolved growth rate and the deposition time. In the following we use a dimensionless growth rate which

• is independent of the deposited molecule fragment volume V and impinging precursor flux [7]: This normalized growth rate allows us to abstract away from the process details and look at it from a more general perspective. Depending on the deposition conditions and employing a Gaussian beam, three

Ion-induced surface reactions and deposition from Pt(CO)₂Cl₂ and Pt(CO)₂Br₂

• Mohammed K. Abdel-Rahman,
• Patrick M. Eckhert,
• Atul Chaudhary,
• Johnathon M. Johnson,
• Jo-Chi Yu,
• Lisa McElwee-White and
• D. Howard Fairbrother

Beilstein J. Nanotechnol. 2024, 15, 1427–1439, doi:10.3762/bjnano.15.115

• deposits from Pt(CO)2Cl2 and Pt(CO)2Br2 resulted in deposits with Pt purities comparable to deposits made from MeCpPtMe3 [55][58]. Although the Pt content was similar, the deposits made from Pt(CO)2X2 suffered from a slower growth rate than those from MeCpPtMe3; this difference is attributed to the lower

Investigation of Hf/Ti bilayers for the development of transition-edge sensor microcalorimeters

• Victoria Y. Safonova,
• Anna V. Gordeeva,
• Anton V. Blagodatkin,
• Dmitry A. Pimanov,
• Anton A. Yablokov and
• Andrey L. Pankratov

Beilstein J. Nanotechnol. 2024, 15, 1353–1361, doi:10.3762/bjnano.15.108

• hafnium makes the film properties, such as the critical temperature and the shape of the superconducting transition, stable over time, which is necessary for successful operation of the detectors. For hafnium, the optimal growth rate was 2 Å/s. Films deposited at this rate have a roughness of about 1 nm

• . Titanium was deposited on hafnium at a growth rate of 0.5 Å/s. The roughness of hafnium films coated with titanium decreased compared to hafnium-only films. Because of the slow deposition rate of Ti, small crystallites with sizes below 10 nm are visible in Figure 2. The A1–A4 samples of square geometry

Direct electron beam writing of silver using a β-diketonate precursor: first insights

• Katja Höflich,
• Krzysztof Maćkosz,
• Chinmai S. Jureddy,
• Aleksei Tsarapkin and
• Ivo Utke

Beilstein J. Nanotechnol. 2024, 15, 1117–1124, doi:10.3762/bjnano.15.90

• twofold: (i) The deposit purity is improved because of the fast desorption of cleaved ligands, and (ii) the volume growth rate is decreased because of short precursor residence times. In addition, surface effects, such as enhanced dissociation due to removal of ligands by chemisorption, as well as an

• spot deposit, where the different flux regions are indicated. The high electron flux of about 6 × 104 electrons·s−1·nm−2 leads to carbon rich 3D tip growth with a volume growth rate of 0.194 µm3/min and a vertical growth rate of about 80 nm/min. With continuously decreasing electron flux, three

• (dose 1.5 × 10−7 C) and the pillar width of 320 nm, this corresponds to a volume growth rate of approximately 0.012 μm3 per minute and a vertical growth rate of about 200 nm per minute. The obtained vertical growth rate was sufficient to avoid any signs of halo evolution around the structure (Figure 3a

Water-assisted purification during electron beam-induced deposition of platinum and gold

• Cristiano Glessi,
• Fabian A. Polman and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2024, 15, 884–896, doi:10.3762/bjnano.15.73

• and composition of the deposit are obtained (Supporting Information File 1, pp S14–S15). The relatively large distance of the Pt GIS nozzle from the deposition area, combined with the low Pt precursor flux (low reservoir temperature), leads to a small growth rate. To test whether the deposition and

Electrospun polysuccinimide scaffolds containing different salts as potential wound dressing material

• Veronika Pálos,
• Krisztina S. Nagy,
• Rita Pázmány,
• Krisztina Juriga-Tóth,
• Bálint Budavári,
• Judit Domokos,
• Dóra Szabó,
• Ákos Zsembery and
• Angela Jedlovszky-Hajdu

Beilstein J. Nanotechnol. 2024, 15, 781–796, doi:10.3762/bjnano.15.65

• 24 h negative control and the salt, PSI, or PSI + salt-treated cells. After 72 h, the viability of the cells increased by a little over 1.5 times compared to that of the 24 h values. This growth rate was slightly lower than expected since the duplication time of 155BR cells is approximately 32 h [76

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS₂ thin films with domains much smaller than the laser spot size

• Felipe Wasem Klein,
• Jean-Roch Huntzinger,
• Vincent Astié,
• Damien Voiry,
• Romain Parret,
• Houssine Makhlouf,
• Sandrine Juillaguet,
• Jean-Manuel Decams,
• Sylvie Contreras,
• Périne Landois,
• Ahmed-Azmi Zahab,
• Jean-Louis Sauvajol and
• Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

• to multiplying or dividing the growth rate by 5). In other words, this means that this comparison with the experiment cannot be used to validate any model parameters but demonstrates the relevance of the proposed procedure to estimate the σN from the experiments. Nevertheless, it has to be noted that

In situ optical sub-wavelength thickness control of porous anodic aluminum oxide

• Aleksandrs Dutovs,
• Raimonds Popļausks,
• Oskars Putāns,
• Vladislavs Perkanuks,
• Aušrinė Jurkevičiūtė,
• Tomas Tamulevičius,
• Uldis Malinovskis,
• Iryna Olyshevets,
• Donats Erts and
• Juris Prikulis

Beilstein J. Nanotechnol. 2024, 15, 126–133, doi:10.3762/bjnano.15.12

• the pore openings of the PAAO [16]. An influence of PAAO thickness variation in the range from 500 nm to 5 μm on biosensor performance using gold-capped PAAO has been reported [17]. Usually, the PAAO thickness is determined by the anodization time and growth rate. Although the thickness accuracy can

• be improved by slow anodization at low temperatures [18], because of the spontaneous nature of oxide formation at the initial phase of PAAO growth, process timing alone cannot guarantee the desired outcome. Furthermore, the growth rate of the PAAO can be influenced by other factors, including local

A combined gas-phase dissociative ionization, dissociative electron attachment and deposition study on the potential FEBID precursor [Au(CH₃)₂Cl]₂

• Elif Bilgilisoy,
• Ali Kamali,
• Thomas Xaver Gentner,
• Gerd Ballmann,
• Sjoerd Harder,
• Hans-Peter Steinrück,
• Hubertus Marbach and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2023, 14, 1178–1199, doi:10.3762/bjnano.14.98

• . As aforementioned, we attribute the size reduction, at least in part, to a more efficient carbon removal at higher currents. The same applies to the observed reduction in thickness with increasing beam current. However, the reduction of volume growth rate per dose at higher currents and the thickness

• that the higher background water content in the HV experiments influences the composition of the deposits. Electron-induced secondary reactions, on the other hand, may play a role, especially as the growth rate of the deposits are comparatively low, and correspondingly the electron exposure of each

Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone

• Kristjan Kalam,
• Peeter Ritslaid,
• Tanel Käämbre,
• Aile Tamm and
• Kaupo Kukli

Beilstein J. Nanotechnol. 2023, 14, 1085–1092, doi:10.3762/bjnano.14.89

• , correspondingly, the maximum growth rate, the dependence of GPC on the SnI4 evaporation temperature was examined. One can see in Figure 1 that the film GPC considerably increased with the evaporation temperature up to approximately 82 °C. Hence, the SnI4 evaporation temperature was set at 83 °C for further

Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

• Mathias Franz,
• Mahnaz Safian Jouzdani,
• Lysann Kaßner,
• Marcus Daniel,
• Frank Stahr and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2023, 14, 951–963, doi:10.3762/bjnano.14.78

• contamination [16]. Thermal ALD processes operate usually at temperatures higher than 150 °C [17][18][19][20][21]. Characteristic for ALD processes, the growth rate is mainly independent of the substrate temperature in a specific temperature range, often denominated as ALD window. Within this range, the

• deposition is determined by the self-limiting behaviour of surface adsorption, and the reaction is completed in the second half cycle with an additional reactant. Therefore, the growth rate is nearly independent of the cycle time. The upper limit for this self-limiting growth is usually the thermal

• )6HC≡CC5H11] and H2 plasma The CVD experiments showed that the window for temperature-independent depositions in ALD mode can be expected at temperatures below 125 °C, as it was assumed from the temperature-dependent growth rate measurements (Figure 3). We performed a set of deposition experiments for

Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectives

• Mattia da Lisca,
• José Alvarez,
• James P. Connolly,
• Nicolas Vaissiere,
• Karim Mekhazni,
• Jean Decobert and
• Jean-Paul Kleider

Beilstein J. Nanotechnol. 2023, 14, 725–737, doi:10.3762/bjnano.14.59

• cm−3 to 2.5 × 1019 cm−3. The first part of the structure was used to measure the growth rate of the non-intentionally doped InP layers (InP:nid) at surface temperatures of 600 and 640 °C. The reflectance signal, monitored with an in situ Laytec EpiCurve TT tool, did not show any difference between

SERS performance of GaN/Ag substrates fabricated by Ag coating of GaN platforms

• Magdalena A. Zając,
• Bogusław Budner,
• Malwina Liszewska,
• Bartosz Bartosewicz,
• Łukasz Gutowski,
• Jan L. Weyher and
• Bartłomiej J. Jankiewicz

Beilstein J. Nanotechnol. 2023, 14, 552–564, doi:10.3762/bjnano.14.46

• layers, calculations of the layer growth rate as a function of time for the MS method and the number of laser pulses for the PLD method were performed. In the next step, we calculated the number of laser pulses necessary to deposit by PLD Ag layers with a thickness comparable to Ag layers deposited using

• growth rate of the Ag layer per laser pulse, affecting the size and shape of the formed silver nanostructures. Only the number of laser pulses was changed to obtain Ag layers of different thicknesses, and the temperature of the substrates was varied to change the morphology of the deposited Ag layers (RT

• process on GaN platforms and flat Si substrates. In the case of PLD, based on the results of the Ag layer thickness measurement on additional Si reference samples prepared in the first stage of the research, the Ag layer growth rate per 1000 pulses was calculated. Using the growth rate obtained this way

Role of titanium and organic precursors in molecular layer deposition of “titanicone” hybrid materials

• Arbresha Muriqi and
• Michael Nolan

Beilstein J. Nanotechnol. 2022, 13, 1240–1255, doi:10.3762/bjnano.13.103

• °C which decreases to 1.5 Å/cycle at 135 °C. It was assumed that this drop could be related to the desorption of unreacted TiCl4 species at 135 °C. In addition, it was proposed that the reduction in growth rate could also be caused by the desorption of Ti(–O(CH2)2O–)2 species or double reactions of

• ) and EG (4.0 Å/cycle at 85 °C to 0.4 Å/cycle at 175 °C) [18] and zincone films grown using diethylzinc (DEZ) and EG (4.0 Å/cycle at 90 °C to 0.25 Å/cycle at 170 °C) [21]. For TiCl4–GL films the growth rate was 2.8 Å/cycle at 130 °C and it decreased to 2.1 Å/cycle at 210 °C. The thickness of TiCl4–GL

• significant drawback [38]. Fumaric acid (FC) is another alcohol organic precursor that was used to deposit titanicone films using TiCl4 on an Si substrate in a temperature range of 180 °C to 350 °C. A temperature-dependent growth characteristic was observed with the growth rate decreasing from 1.10 Å/cycle at

Effects of focused electron beam irradiation parameters on direct nanostructure formation on Ag surfaces

• Jānis Sniķeris,
• Vjačeslavs Gerbreders,
• Andrejs Bulanovs and
• Ēriks Sļedevskis

Beilstein J. Nanotechnol. 2022, 13, 1004–1010, doi:10.3762/bjnano.13.87

• shape of the resulting structures on an Ag surface. In addition, we investigate how the nitrogen plasma cleaning procedure of a vacuum chamber can affect the growth of these structures. A beam current of around 40 pA resulted in the fastest structure growth rate. By increasing the beam diameter and

• angle of incidence the growth rate decreased; however, by raising the beam focus up to 5–6 μm above the surface the growth rate increased. Vacuum chamber cleaning reduced structure growth rate for a few hours. These findings can help to better control and optimise the growth of nanostructures on metal

• ][25]. It should be noted that the growth rate of carbon layers under EB irradiation is also affected by the types of hydrocarbon molecules present in the vacuum chamber [26]. Normally, the deposition of carbon via focused EB irradiation is viewed as a simple addition of mass to the irradiated area

Hierachical epicuticular wax coverage on leaves of Deschampsia antarctica as a possible adaptation to severe environmental conditions

• Elena V. Gorb,
• Iryna A. Kozeretska and
• Stanislav N. Gorb

Beilstein J. Nanotechnol. 2022, 13, 807–816, doi:10.3762/bjnano.13.71

• equipped for the successful scattering of strong radiation. Experimental studies with altered levels of UV-B radiation and D. antarctica showed no significant effect of enhanced or reduced radiation on the relative growth rate and leaf photosynthesis of the plants [40]. Moisture, being one of the most

Zinc oxide nanostructures for fluorescence and Raman signal enhancement: a review

• Ioana Marica,
• Fran Nekvapil,
• Maria Ștefan,
• Cosmin Farcău and
• Alexandra Falamaș

Beilstein J. Nanotechnol. 2022, 13, 472–490, doi:10.3762/bjnano.13.40

• photochemical reduction [32], pulsed laser-induced photolysis [38], or controlled decoration with Ag NPs using an electroless plating technique [44]. Photochemical synthesis permits the control of nucleation and growth rate without using organic additives. Xu et al. employed laser irradiation of ZnO nanorods in

Micro- and nanotechnology in biomedical engineering for cartilage tissue regeneration in osteoarthritis

• Zahra Nabizadeh,
• Mahmoud Nasrollahzadeh,
• Hamed Daemi,
• Mohamadreza Baghaban Eslaminejad,
• Ali Akbar Shabani,
• Mehdi Dadashpour,
• Majid Mirmohammadkhani and
• Davood Nasrabadi

Beilstein J. Nanotechnol. 2022, 13, 363–389, doi:10.3762/bjnano.13.31

Relationship between corrosion and nanoscale friction on a metallic glass

• Haoran Ma and
• Roland Bennewitz

Beilstein J. Nanotechnol. 2022, 13, 236–244, doi:10.3762/bjnano.13.18

• stronger with the immersion time, the dissolution becomes slower, and the growth rate of the outer layer decreases. In NaCl solution, the friction coefficient of the outer layer is constant at a value smaller than that of the outer layer in phosphate buffer after long immersion. During immersion, the outer

Engineered titania nanomaterials in advanced clinical applications

• Padmavati Sahare,
• Paulina Govea Alvarez,
• Juan Manual Sanchez Yanez,
• Gabriel Luna-Bárcenas,
• Samik Chakraborty,
• Sujay Paul and
• Miriam Estevez

Beilstein J. Nanotechnol. 2022, 13, 201–218, doi:10.3762/bjnano.13.15

• (Figure 8a). Moreover, the tumor growth rate was monitored to analyze the phototherapeutic efficacy, and the results are presented in Figure 8b. The complete elimination of the tumor in the mice treated with G-TiO2−x-TPP+NIR was noticed, whereas mice treated with physiological saline, G-TiO2−x-TPP, or NIR

Sputtering onto liquids: a critical review

• Anastasiya Sergievskaya,
• Adrien Chauvin and
• Stephanos Konstantinidis

Beilstein J. Nanotechnol. 2022, 13, 10–53, doi:10.3762/bjnano.13.2

• as gas-phase scattering is minimized. The film deposition rate, lying typically in the range of several nanometers per minute, is therefore higher compared to non-magnetized sputtering discharges. Here a remark should be made: While the film growth rate is usually expressed in units of thickness per

• electron microscopy (TEM), it was shown that the Au sol formation process consists of an induction period followed by a rapid increase in the number of particles, followed by a linear increase, followed by a rapid decrease in the growth rate. In other words, the typical kinetic curve has a sigmoidal S

Irradiation-driven molecular dynamics simulation of the FEBID process for Pt(PF₃)₄

• Alexey Prosvetov,
• Alexey V. Verkhovtsev,
• Gennady Sushko and
• Andrey V. Solov’yov

Beilstein J. Nanotechnol. 2021, 12, 1151–1172, doi:10.3762/bjnano.12.86

• nanostructures. The analysis of the simulation results provides spatially resolved relative metal content, height, and growth rate of the deposits, which represents valuable reference data for the experimental characterization of the nanostructures grown by FEBID. Keywords: focused electron beam-induced

• the output of MD simulations [20]. In a pioneering study [13], IDMD was successfully applied for the simulation of FEBID of W(CO)6 precursors on a SiO2 surface and enabled to predict the morphology, molecular composition, and growth rate of tungsten-based nanostructures emerging on the surface during

• nanostructure growth rate. The chemical composition and geometry of both the precursor and the substrate are specified using the standard .pdb or .xyz file formats. Atomic coordinates for many different precursor molecules can be found in online databases, for example, the NIST Chemistry WebBook (https

Uniform arrays of gold nanoelectrodes with tuneable recess depth

• Elena O. Gordeeva,
• Ilya V. Roslyakov,
• Alexey P. Leontiev,
• Alexey A. Klimenko and
• Kirill S. Napolskii

Beilstein J. Nanotechnol. 2021, 12, 957–964, doi:10.3762/bjnano.12.72

• growth rate as can be seen from the dependence of the average current density (javer) and the Cu growth rate on the deposition potential (Table 1). To determine the Cu electrodeposition conditions leading to the highest length uniformity, the first segment with much longer length than the supposed recess

• metal for the second segment. The low concentration of Au(I) electroactive species in the electrolyte results in a low current density (javer ≈ 0.6 mA·cm−2 for Ed = −1.0 V) and a low metal growth rate of 3.5 µm·h−1. As a consequence, complete pore filling in the used AAO template requires ca. 14 h. Such

• growth rate of the third Cu segments due to the contribution of diffusion current. Thus, an increase in the fraction of active nanoelectrodes could be achieved under kinetic control of electrodeposition process, which requires lower overpotentials [24][26] and/or lower electrolyte temperatures [30][31

Self-assembly of Eucalyptus gunnii wax tubules and pure ß-diketone on HOPG and glass

• Miriam Anna Huth,
• Axel Huth and
• Kerstin Koch

Beilstein J. Nanotechnol. 2021, 12, 939–949, doi:10.3762/bjnano.12.70

• 40% with growth velocities of 0.3 to 0.5 nm/min (Figure 7). Since tubule 4 only grew until minute 21, the growth rate of tubule 4 was determined only for this period. After that, the height of the tubule decreased. The first AFM images of the investigation of ß-diketone recrystallization on glass

Comprehensive review on ultrasound-responsive theranostic nanomaterials: mechanisms, structures and medical applications

• Sepand Tehrani Fateh,
• Lida Moradi,
• Elmira Kohan,
• Michael R. Hamblin and
• Amin Shiralizadeh Dezfuli

Beilstein J. Nanotechnol. 2021, 12, 808–862, doi:10.3762/bjnano.12.64