Focused ion beam-induced platinum deposition with a low-temperature cesium ion source

• Thomas Henning Loeber,
• Bert Laegel,
• Meltem Sezen,
• Feray Bakan Misirlioglu,
• Edgar J. D. Vredenbregt and
• Yang Li

Beilstein J. Nanotechnol. 2025, 16, 910–920, doi:10.3762/bjnano.16.69

• currents. Deposition rate, material composition, and electrical resistivity were examined and compared with layers deposited at comparable settings with a standard gallium (Ga) FIB. The deposition rate is found to depend linearly on the current density. The rate is comparable for Cs+ and Ga+ under similar

• conditions, but the deposit has lower Pt content for Cs+. The electrical resistivity of the deposit is found to be higher for Cs+ than for Ga+ and decreasing with increasing acceleration voltage. Keywords: cesium ion source; cold atom ion source; focused ion beam (FIB); FIB-induced deposition (FIBID

• Cs+ FIB in comparison to results of layer deposition induced by Rb+ and Ga+. Pt was deposited at different acceleration voltages and ion beam currents to evaluate the deposition rate and the electrical resistivity of the layers. To measure the grain structure as well as the material composition using

High-temperature epitaxial growth of tantalum nitride thin films on MgO: structural evolution and potential for SQUID applications

• Michelle Cedillo Rosillo,
• Oscar Contreras López,
• Jesús Antonio Díaz,
• Agustín Conde Gallardo and
• Harvi A. Castillo Cuero

Beilstein J. Nanotechnol. 2025, 16, 690–699, doi:10.3762/bjnano.16.53

• 6.3 K, depending on the stoichiometry and deposition conditions. Resistance–temperature curves further confirm the high quality of the films, as evidenced by their low residual resistivity ratios. These findings demonstrate that PLD is a suitable technique for producing high-quality TaN

• diffraction database was used for the qualitative search–match phase identification. To determine the epitaxy of the films, TEM was carried out with a Jeol JEM 2100F. Finally, the resistivity, R, was measured as a function of the temperature T using the van der Pauw method in a DynaCool Quantum Design

Nanoscale capacitance spectroscopy based on multifrequency electrostatic force microscopy

• Pascal N. Rohrbeck,
• Lukas D. Cavar,
• Franjo Weber,
• Peter G. Reichel,
• Mara Niebling and
• Stefan A. L. Weber

Beilstein J. Nanotechnol. 2025, 16, 637–651, doi:10.3762/bjnano.16.49

• , which is 25·1021 Ω, taking into account the electrical resistivity of silicon dioxide of [92] and a thickness of the SiO2 layer of 300 nm on an area of 9 μm2. The observed discrepancy may be attributed to the increased conductivity of the microcapacitors, which is a result of the incorporation of Ga

• materials science, biology, and nanotechnology. Experimental Polymer blend samples We used F14H20 samples that we bought from SPM Labs LLC, Tempe, AZ, USA. Microcapacitors Si wafers “CZ” were bought from “Si-Mat” with a diameter of 150 mm, ⟨100⟩ surface orientation, a thickness of 675 ± 20 μm, a resistivity

N₂⁺-implantation-induced tailoring of structural, morphological, optical, and electrical characteristics of sputtered molybdenum thin films

• Usha Rani,
• Kafi Devi,
• Divya Gupta and
• Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 495–509, doi:10.3762/bjnano.16.38

• resistivity of Mo thin films makes them desirable for integrated circuits, where they contribute to the efficient flow of electrical current [3]. Furthermore, their optical properties make them well suited for a use as a protective coating in energy storage and electronic devices [4][5]. Mo films deposited on

• ] investigated the effects of argon ion bombardment on the characteristics of Mo thin films. Films with reduced porosity and larger grains demonstrated increased reflectance and decreased resistivity, consistent with electron mean free path analysis results. Navin et al. [15] investigated self-organized pattern

• implanted Mo thin films as a function of thickness. I–V curves have been obtained within a voltage range of −5 to 5 V. A nearly linear relationship between applied voltage and the resulting current indicates ohmic behavior [51]. Resistance and resistivity of the Mo thin films have been calculated based on

Pulsed laser in liquid grafting of gold nanoparticle–carbon support composites

• Madeleine K. Wilsey,
• Teona Taseska,
• Qishen Lyu,
• Connor P. Cox and
• Astrid M. Müller

Beilstein J. Nanotechnol. 2025, 16, 349–361, doi:10.3762/bjnano.16.26

• resistivity of ≥17.5 MΩ·cm was obtained from a Thermo Scientific Barnstead Smart2Pure Pro UV/UF 15 LPH Water Purification System. The experiments were performed at room temperature and in ambient air. Glassware was cleaned with aqua regia, thoroughly rinsed with water, and dried before use. Data analysis and

Tailoring of physical properties of RF-sputtered ZnTe films: role of substrate temperature

• Kafi Devi,
• Usha Rani,
• Arun Kumar,
• Divya Gupta and
• Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 333–348, doi:10.3762/bjnano.16.25

• carrier transport, ZnTe can be used as a buffer layer in CdTe-based solar cells for back contact. Moreover, n-type zinc telluride films can be used in the window layer as a substitute for CdS [6]. Zinc telluride films are highly resistive with a resistivity of about several megaohm·centimetres [7]. The

• resistivity of the films depends on the structure, grain boundary defects, and surface morphology of the films. These properties can be altered by varying the deposition method as well as the deposition parameters. In literature, there are several reports of zinc telluride films deposited using various

• . Rakhshani et al. [16] reported the impact of substrate temperature (35 and 305 °C), thermal annealing, and nitrogen doping on optoelectronic properties of ZnTe films and established an optimal doping concentration of nitrogen for lowering the resistivity of the grown films. Further, there are reports [17

Advanced atomic force microscopy techniques V

• Philipp Rahe,
• Ilko Bald,
• Nadine Hauptmann,
• Regina Hoffmann-Vogel,
• Harry Mönig and
• Michael Reichling

Beilstein J. Nanotechnol. 2025, 16, 54–56, doi:10.3762/bjnano.16.6

• 10.3762/bjnano.16.6 Keywords: AFM; atomic force microscopy; conductivity; drift correction; force spectroscopy; NC-AFM; non-contact atomic force microscopy; resistivity; tip–surface interaction; With the restrictions on travelling and social distancing lifted, we were delighted to continue two series of

• accurate knowledge of the quartz cantilever stiffness, the authors develop a method to quantify the stiffness based on thermal noise measurements and numerical simulation. Calibrated measurements of conductivity and resistivity are the focus of the contribution by Piquemal et al. [3]. A particular

Fabrication of hafnium-based nanoparticles and nanostructures using picosecond laser ablation

• Abhishek Das,
• Mangababu Akkanaboina,
• Jagannath Rathod,
• R. Sai Prasad Goud,
• Kanaka Ravi Kumar,
• Raghu C. Reddy,
• Ratheesh Ravendran,
• Katia Vutova,
• S. V. S. Nageswara Rao and
• Venugopal Rao Soma

Beilstein J. Nanotechnol. 2024, 15, 1639–1653, doi:10.3762/bjnano.15.129

• -dispersive X-ray spectroscopy (EDX, Figure 1b). Distilled water with a resistivity of more than 18 MΩ·cm was obtained from a Millipore system. Toluene and anisole (spectroscopic grade) were obtained from Sigma-Aldrich and used as received. Synthesis of nanoparticles and nanostructures A linearly polarised

Investigation of Hf/Ti bilayers for the development of transition-edge sensor microcalorimeters

• Victoria Y. Safonova,
• Anna V. Gordeeva,
• Anton V. Blagodatkin,
• Dmitry A. Pimanov,
• Anton A. Yablokov and
• Andrey L. Pankratov

Beilstein J. Nanotechnol. 2024, 15, 1353–1361, doi:10.3762/bjnano.15.108

• , shown in Figure 1a, are connected by 140 μm-wide electrodes, which increase the effective bridge length. This has to be thought about when calculating the resistivity. Thus, 280 μm was added to the length of all square bridges except sample A1 (electrodes are already integrated into this sample). The

• resistivity estimated considering the width of the electrodes ranged from 0.7 × 10−7 to 1.1 × 10−7 Ω·m for the four structures A1–A4 from Figure 1a. Bearing in mind that the residual resistance ratio of the studied samples is in the range from 1.9 to 2.5, the room temperature resistivity is close to the value

• of the bulk resistivity at room temperature of 3.3 × 10−7 Ω·m [11]. The variation of calculated resistivity between bridges of different sizes is likely not due to physically different film properties, but rather due to rough estimations not taking into account the edge effects for the current flow

New design of operational MEMS bridges for measurements of properties of FEBID-based nanostructures

• Bartosz Pruchnik,
• Krzysztof Kwoka,
• Ewelina Gacka,
• Dominik Badura,
• Piotr Kunicki,
• Andrzej Sierakowski,
• Paweł Janus,
• Tomasz Piasecki and
• Teodor Gotszalk

Beilstein J. Nanotechnol. 2024, 15, 1273–1282, doi:10.3762/bjnano.15.103

• apex by choosing appropriate dwell time and pitch for the deposition. The dimensions of the nanowire were 60 nm in diameter and 1.6 μm in length. The junction was tested by resistance measurements (Figure 8b). The measured resistance was 12 MΩ, giving a resistivity of approximately 2.1 Ω·cm, which is

• consistent with the reported resistivity of the FEBID material [24]. The resistivity was also measured across the milled structure before nanowire deposition (Figure 8a) and after FIB removal (Figure 8b). The results obtained show that in both cases the measured current was mostly related to the charging and

• shown that the leakage was not affected by gallium FIB milling or conductive FEBID deposition in the vicinity of the RoI. This is particularly important in the field of high-resistivity materials (e.g., FEBID) where the elimination of parasitic interactions is critical to the measurement. More

The role of a tantalum interlayer in enhancing the properties of Fe₃O₄ thin films

• Hai Dang Ngo,
• Vo Doan Thanh Truong,
• Van Qui Le,
• Hoai Phuong Pham and
• Thi Kim Hang Pham

Beilstein J. Nanotechnol. 2024, 15, 1253–1259, doi:10.3762/bjnano.15.101

• NTT Hi-Tech Institute, Nguyen Tat Thanh University, 298-300A Nguyen Tat Thanh Street, Ward 13, District 4, Ho Chi Minh City 700000, Vietnam 10.3762/bjnano.15.101 Abstract High spin polarization and low resistivity of Fe3O4 at room temperature have been an appealing topic in spintronics with various

Dual-functionalized architecture enables stable and tumor cell-specific SiO₂NPs in complex biological fluids

• Iris Renata Sousa Ribeiro,
• Raquel Frenedoso da Silva,
• Romênia Ramos Domingues,
• Adriana Franco Paes Leme and
• Mateus Borba Cardoso

Beilstein J. Nanotechnol. 2024, 15, 1238–1252, doi:10.3762/bjnano.15.100

• , resistivity of 18.2 MΩ·cm–1). Synthesis of rhodamine-labeled SiO2NPs (SiO2NPs) The synthesis of rhodamine-labeled SiO2NPs was similar to the protocol proposed by the group [27]. The dye precursor was synthesized by conjugation of the isothiocyanate group of rhodamine B isothiocyanate to APTES at a molar ratio

Photocatalytic methane oxidation over a TiO₂/SiNWs p–n junction catalyst at room temperature

• Qui Thanh Hoai Ta,
• Luan Minh Nguyen,
• Ngoc Hoi Nguyen,
• Phan Khanh Thinh Nguyen and
• Dai Hai Nguyen

Beilstein J. Nanotechnol. 2024, 15, 1132–1141, doi:10.3762/bjnano.15.92

• . Experimental Chemicals and materials Commercial p-type Si 3-inch wafers (⟨100⟩ orientation, boron-doped, resistivity = 0.01–1 Ω·cm) were purchased from Silicon Mitus Corporation, South Korea. Silver nitrate (AgNO3, 0.1 M), hydrofluoric acid HF (50 wt %), nitric acid (HNO3, 63%), acetone, and ethanol were

Water-assisted purification during electron beam-induced deposition of platinum and gold

• Cristiano Glessi,
• Fabian A. Polman and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2024, 15, 884–896, doi:10.3762/bjnano.15.73

• after loading the sample, the chamber was plasma-cleaned with an XEI Scientific Evactron decontaminator for 30 min, at 0.4 Torr (air leak) and a forward radio frequency power of 12 W. Silicon substrates were obtained from a 525 ± 25 µm p-type silicon wafer (resistivity of 1–5 Ω·cm, (100) crystal

Superconducting spin valve effect in Co/Pb/Co heterostructures with insulating interlayers

• Andrey A. Kamashev,
• Nadir N. Garif’yanov,
• Aidar A. Validov,
• Vladislav Kataev,
• Alexander S. Osin,
• Yakov V. Fominov and
• Ilgiz A. Garifullin

Beilstein J. Nanotechnol. 2024, 15, 457–464, doi:10.3762/bjnano.15.41

• without insulating interlayers at the Co1/Pb/Co2 interfaces was prepared for comparison. The list of the studied CoOx (3.5 nm)/Co1 (3 nm)/I1/Pb(dPb)/I2/Co2 (3 nm)/Si3N4 (85 nm) samples with variable Pb layer thickness dPb is presented in Table 1. Results Electrical resistivity measurements were carried

• , the temperature dependence of the resistivity R(T) was recorded for the P and AP configurations of the magnetizations of the Co1 and Co2 layers by appropriate rotation of the magnetization of the Co2 layer through an external magnetic field. Figure 2 depicts the superconducting transition curves for

Modulated critical currents of spin-transfer torque-induced resistance changes in NiCu/Cu multilayered nanowires

• Mengqi Fu,
• Roman Hartmann,
• Julian Braun,
• Sergej Andreev,
• Torsten Pietsch and
• Elke Scheer

Beilstein J. Nanotechnol. 2024, 15, 360–366, doi:10.3762/bjnano.15.32

• (Imicro), the transverse instability makes the magnetization change along the interface, opening low-resistivity paths for both spin-up and spin-down electrons at different spatial positions of the magnetic layer, and thus reduces (dV/dI)red. The current densities of Ic+, Ic−, and Imicro are estimated to

Design, fabrication, and characterization of kinetic-inductive force sensors for scanning probe applications

• August K. Roos,
• Ermes Scarano,
• Elisabet K. Arvidsson,
• Erik Holmgren and
• David B. Haviland

Beilstein J. Nanotechnol. 2024, 15, 242–255, doi:10.3762/bjnano.15.23

• simulation and experiment. Electrical mode From the measured normal-state resistance of our nanowires and the measured thickness and width, we find a sheet resistance R□ = 243 Ω/□, corresponding to a resistivity of ρn = 365 μΩ cm. We monitor the microwave response during cool-down and estimate a critical

CdSe/ZnS quantum dots as a booster in the active layer of distributed ternary organic photovoltaics

• Gabriela Lewińska,
• Piotr Jeleń,
• Zofia Kucia,
• Maciej Sitarz,
• Łukasz Walczak,
• Bartłomiej Szafraniak,
• Jerzy Sanetra and
• Konstanty W. Marszalek

Beilstein J. Nanotechnol. 2024, 15, 144–156, doi:10.3762/bjnano.15.14

• was determined. The resistivity of the layers was determined using impedance spectroscopy. Simulations (General-Purpose Photovoltaic Device Model) showed a performance improvement in the cells with quantum dots of 0.36–1.45% compared to those without quantum dots. Keywords: efficiency; luminescence

• system is mainly caused by the many times reduced resistivity, demonstrated by the impendance spectroscopy results. Absolute values of efficiency growth for the investigated doped QD cells are about 1–2%. However, counting the percentage increase, these small values represent an increase of 10–20% over

A combined gas-phase dissociative ionization, dissociative electron attachment and deposition study on the potential FEBID precursor [Au(CH₃)₂Cl]₂

• Elif Bilgilisoy,
• Ali Kamali,
• Thomas Xaver Gentner,
• Gerd Ballmann,
• Sjoerd Harder,
• Hans-Peter Steinrück,
• Hubertus Marbach and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2023, 14, 1178–1199, doi:10.3762/bjnano.14.98

• (trifluorophosphine)gold(I) (AuICl(PF3)) [23]. These precursors have enabled depositions of ≈95 atom % Au and a resistivity of Au grains as low as 22 µΩ, respectively. However, the short lifetime of both precursors, which results from their moisture sensitivity and thermal instability, has limited their applicability

A multi-resistance wide-range calibration sample for conductive probe atomic force microscopy measurements

• François Piquemal,
• Khaled Kaja,
• Pascal Chrétien,
• José Morán-Meza,
• Frédéric Houzé,
• Christian Ulysse and
• Abdelmounaim Harouri

Beilstein J. Nanotechnol. 2023, 14, 1141–1148, doi:10.3762/bjnano.14.94

• wide) electrode arms designed for local C-AFM imaging and spectroscopic measurements. The gold lines’ dimensions were characterized for calculating their intrinsic resistances using the gold resistivity value. Calibration of SMD resistors and gold lines Before conducting C-AFM measurements, the

• segments, Ri,seg, in the central zone of the sample, and the resistance of the wiring, Rwire, between the two probes and the DVM. Considering the dimensions of the line segments and the measured resistivity of the deposited gold lines (ρ = (31.4 ± 0.4) × 10−9 Ω·m), we calculated three correction

Silver-based SERS substrates fabricated using a 3D printed microfluidic device

• Phommachith Sonexai,
• Minh Van Nguyen,
• Bui The Huy and
• Yong-Ill Lee

Beilstein J. Nanotechnol. 2023, 14, 793–803, doi:10.3762/bjnano.14.65

• (USA). Deionized water with a resistivity of 18 MΩ·cm−1, provided by a Milli-Q water purification system (Millipore Corp., MA, USA), was used throughout all the experiments. The morphologies of Ag NPs and SERS substrates were examined using a field-emission scanning electron microscope (FE-SEM, Mira II

• centrifuged at 12,000 rpm for 5 min to separate the Ag NPs solution and remove the oil phase. Finally, the Ag NPs suspension was stored in a dark vial at room temperature for further experiments. Fabrication of porous silicon (PS) substrate A p-type Si(100) wafer with a resistivity of 0.01–0.09 Ω·cm was used

Metal-organic framework-based nanomaterials as opto-electrochemical sensors for the detection of antibiotics and hormones: A review

• Akeem Adeyemi Oladipo,
• Saba Derakhshan Oskouei and
• Mustafa Gazi

Beilstein J. Nanotechnol. 2023, 14, 631–673, doi:10.3762/bjnano.14.52

• might produce localization of donor states close to the aromatic ring, were suggested as the source of the bandgap modulation due to changes in the functionality of the organic linker [82]. Due to MOFs’ low resistivity and rapid charge carrier mobility, some researchers [80][81][82][83] have recently

• behaviour even further. Through variation in temperature resistivity, Clough et al. [83] demonstrated band-like metallic conductivity in cobalt-based MOF. The ferroelectric characteristics of MOFs have not yet been extensively investigated experimentally. However, calculations based on density functional

ZnO-decorated SiC@C hybrids with strong electromagnetic absorption

• Liqun Duan,
• Zhiqian Yang,
• Yilu Xia,
• Xiaoqing Dai,
• Jian’an Wu and
• Minqian Sun

Beilstein J. Nanotechnol. 2023, 14, 565–573, doi:10.3762/bjnano.14.47

• stability, chemical corrosion resistance, and high strength. Hence, it has received a lot of attention [5][6][7]. Because of the high resistivity and the low dielectric parameters of traditionally prepared SiC, its EM absorption is poor [8]. According to existing literature reports, the electromagnetic

Concentration-dependent photothermal conversion efficiency of gold nanoparticles under near-infrared laser and broadband irradiation

• Vikas,
• Raj Kumar and
• Sanjeev Soni

Beilstein J. Nanotechnol. 2023, 14, 205–217, doi:10.3762/bjnano.14.20

• -CTAB-DIH-1-25) were purchased from Nanopartz Inc. Suspensions with different concentrations of these GNPs were prepared by using ultrapure water (18.1 MΩ resistivity). Plasmonic photothermal measurements The photothermal experiments were performed by adding a 1.5 mL volume of different GNP

Liquid phase exfoliation of talc: effect of the medium on flake size and shape

• Samuel M. Sousa,
• Helane L. O. Morais,
• Joyce C. C. Santos,
• Ana Paula M. Barboza,
• Bernardo R. A. Neves,
• Elisângela S. Pinto and
• Mariana C. Prado

Beilstein J. Nanotechnol. 2023, 14, 68–78, doi:10.3762/bjnano.14.8

• was manually milled to a fine powder. Sodium cholate and Triton-X100 were purchased from Sigma-Aldrich and used as received. All organic solvents were of analytical grade and used as received. Deionized water (resistivity 18.2 MΩ·cm) from a milliQ system was used for solution preparation. AFM