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Search for "semiconductor nanowires" in Full Text gives 15 result(s) in Beilstein Journal of Nanotechnology.

Nanostructured materials characterized by scanning photoelectron spectromicroscopy

  • Matteo Amati,
  • Alexey S. Shkvarin,
  • Alexander I. Merentsov,
  • Alexander N. Titov,
  • María Taeño,
  • David Maestre,
  • Sarah R. McKibbin,
  • Zygmunt Milosz,
  • Ana Cremades,
  • Rainer Timm and
  • Luca Gregoratti

Beilstein J. Nanotechnol. 2025, 16, 700–710, doi:10.3762/bjnano.16.54

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  • ; operando; oxides; scanning photoelectron spectromicroscopy; semiconductor nanowires; transition metal dichalcogenides; XPS; Introduction Nanometer or micrometer-sized materials play a key role in modern technologies in the search of new routes for unforeseen performances generating breakthroughs in
  •  1i–k). Operando characterization of InP nanowire p–n junctions Semiconductor nanowires offer unprecedented possibilities in utilizing, combining, and modifying material properties for application in electronic, photonic, energy harvesting, or quantum information devices [15][16]. Their small
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Published 23 May 2025

Humidity-dependent electrical performance of CuO nanowire networks studied by electrochemical impedance spectroscopy

  • Jelena Kosmaca,
  • Juris Katkevics,
  • Jana Andzane,
  • Raitis Sondors,
  • Liga Jasulaneca,
  • Raimonds Meija,
  • Kiryl Niherysh,
  • Yelyzaveta Rublova and
  • Donats Erts

Beilstein J. Nanotechnol. 2023, 14, 683–691, doi:10.3762/bjnano.14.54

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  • dielectrophoresis. The impedance of the device increased and remained high at RH up to 50–60% because of the chemisorption of water molecules on the surface of the p-type semiconductor nanowires. It decreased upon exposure to higher RH levels due to physisorption of water molecules atop of the chemisorbed layer and
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Published 05 Jun 2023

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

  • Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

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  • has been used to induce the growth of semiconductor nanowires [97]. In this study by Aramesh, gold catalyst nanoparticles were distributed onto GaAs and InAs substrates and upon irradiating selected regions with helium ions, semiconductor nanowires grew from the gold nucleation sites. By increasing
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Published 02 Jul 2021

Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

  • Jianqi Dong,
  • Liang Chen,
  • Yuqing Yang and
  • Xingfu Wang

Beilstein J. Nanotechnol. 2020, 11, 1847–1853, doi:10.3762/bjnano.11.166

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  • semiconductor nanowires (NWs) have been extensively studied in recent years due to the predominant mechanical flexibility caused by a large surface-to-volume ratio and unique electrical and optical properties induced by the 1D quantum confinement effect. Herein, we use a top-down two-step preparation method to
  • polarization distribution inside the heterojunction [7][8]. The piezotronic effect, described first by Zhong Lin Wang in 2007, is a combination of the piezoelectric effect and the properties of non-centrosymmetric semiconductor materials [9]. 1D semiconductor nanowires (NWs) are more suitable candidates for
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Published 10 Dec 2020

Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

  • Elena I. Monaico,
  • Eduard V. Monaico,
  • Veaceslav V. Ursaki,
  • Shashank Honnali,
  • Vitalie Postolache,
  • Karin Leistner,
  • Kornelius Nielsch and
  • Ion M. Tiginyanu

Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81

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  • nanostructures, including nanowires. Semiconductor nanowires, particularly III–V compound nanowires, show potential for their use as active components in solar cells [7][8][9][10], photodetectors [11], light-emitting diodes [12], transistors [13], and other applications. A uniform array of parallel nanowires
  • carrier concentration in the GaAs NWs and of the photodetector design. We suppose that the parameters of IR photodetectors based on nanowires prepared by anodization can also be significantly improved after corresponding optimization. A drawback of photoconductive detectors based on semiconductor
  • nanowires is related to their long-relaxation phenomena caused by the strong surface band bending effects [37]. In contrast, much shorter relaxation times are inherent to photodetectors based on interdigitated metal–semiconductor–metal structures with Schottky diodes. However, a very low feature size is
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Published 29 Jun 2020

Transition from freestanding SnO2 nanowires to laterally aligned nanowires with a simulation-based experimental design

  • Jasmin-Clara Bürger,
  • Sebastian Gutsch and
  • Margit Zacharias

Beilstein J. Nanotechnol. 2020, 11, 843–853, doi:10.3762/bjnano.11.69

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  • Wagner and Ellis about the possibility to use a vapor–liquid–solid (VLS) process to grow semiconductor nanowires (NWs), significant work has been published on the production of nanowires [1][2]. It was demonstrated that NWs of different materials can be grown on different substrates and can be
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Published 28 May 2020

Interaction-induced zero-energy pinning and quantum dot formation in Majorana nanowires

  • Samuel D. Escribano,
  • Alfredo Levy Yeyati and
  • Elsa Prada

Beilstein J. Nanotechnol. 2018, 9, 2171–2180, doi:10.3762/bjnano.9.203

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  • features are observed in recent experiments on the detection of Majoranas and could thus help to properly characterize them. Keywords: hybrid superconductor–semiconductor nanowires; interactions; Majorana bound states; quantum dots; Introduction Semiconducting nanowires with strong spin–orbit interaction
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Published 15 Aug 2018

Disorder-induced suppression of the zero-bias conductance peak splitting in topological superconducting nanowires

  • Jun-Tong Ren,
  • Hai-Feng Lü,
  • Sha-Sha Ke,
  • Yong Guo and
  • Huai-Wu Zhang

Beilstein J. Nanotechnol. 2018, 9, 1358–1369, doi:10.3762/bjnano.9.128

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  • several experiments since 2012 [23][24][25][26][27][28][29][30]. As an important signature of MBSs in the semiconductor nanowires which are proximity-coupled to s-wave superconductors, the zero-bias conductance peak has been observed in the tunneling spectra in the presence of a finite magnetic field [23
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Published 04 May 2018

Andreev spectrum and supercurrents in nanowire-based SNS junctions containing Majorana bound states

  • Jorge Cayao,
  • Annica M. Black-Schaffer,
  • Elsa Prada and
  • Ramón Aguado

Beilstein J. Nanotechnol. 2018, 9, 1339–1357, doi:10.3762/bjnano.9.127

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  • Madrid, E-28049 Madrid, Spain Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Cantoblanco, 28049 Madrid, Spain 10.3762/bjnano.9.127 Abstract Hybrid superconductor–semiconductor nanowires with Rashba spin–orbit coupling are arguably becoming the leading platform for the search of Majorana bound
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Published 03 May 2018

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

  • Liga Jasulaneca,
  • Jelena Kosmaca,
  • Raimonds Meija,
  • Jana Andzane and
  • Donats Erts

Beilstein J. Nanotechnol. 2018, 9, 271–300, doi:10.3762/bjnano.9.29

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Published 25 Jan 2018

Substrate and Mg doping effects in GaAs nanowires

  • Perumal Kannappan,
  • Nabiha Ben Sedrine,
  • Jennifer P. Teixeira,
  • Maria R. Soares,
  • Bruno P. Falcão,
  • Maria R. Correia,
  • Nestor Cifuentes,
  • Emilson R. Viana,
  • Marcus V. B. Moreira,
  • Geraldo M. Ribeiro,
  • Alfredo G. de Oliveira,
  • Juan C. González and
  • Joaquim P. Leitão

Beilstein J. Nanotechnol. 2017, 8, 2126–2138, doi:10.3762/bjnano.8.212

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  • ; photoluminescence; Introduction In recent years, semiconductor nanowires have attracted a great deal of interest as building blocks for a new generation of electronic and optoelectronic devices, namely, batteries, biological and chemical sensors, thermoelectric devices, laser diodes, photo detectors, integrated
  • photonic circuits, and solar cells [1][2][3]. Semiconductor nanowires have been a topic of intense research in the scope of third generation photovoltaic technology, with a predicted significant reduction of cost production [4]. Group III–V semiconductor nanowires are considered very promising materials
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Published 11 Oct 2017

Kelvin probe force microscopy for local characterisation of active nanoelectronic devices

  • Tino Wagner,
  • Hannes Beyer,
  • Patrick Reissner,
  • Philipp Mensch,
  • Heike Riel,
  • Bernd Gotsmann and
  • Andreas Stemmer

Beilstein J. Nanotechnol. 2015, 6, 2193–2206, doi:10.3762/bjnano.6.225

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  • surface state density and Schottky depletion region in semiconductor nanowires [4][5] or to determine the mean free path in carbon nanotubes [6]. KFM also allows one to determine intrinsic doping of two-dimensional crystals such as graphene [7][8], where surface potential and electronic properties depend
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Published 23 Nov 2015

Electrical properties of single CdTe nanowires

  • Elena Matei,
  • Camelia Florica,
  • Andreea Costas,
  • María Eugenia Toimil-Molares and
  • Ionut Enculescu

Beilstein J. Nanotechnol. 2015, 6, 444–450, doi:10.3762/bjnano.6.45

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  • found that (similar to other cases of semiconductor nanowires) the surface passivation leads to an improvement in the electrical properties [16][17]. Results and Discussion Electrochemical deposition of CdTe is a process that has been studied over several decades, and is one of the first reports of an
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Published 12 Feb 2015

Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si(111)

  • D. J. Lockwood,
  • N. L. Rowell,
  • A. Benkouider,
  • A. Ronda,
  • L. Favre and
  • I. Berbezier

Beilstein J. Nanotechnol. 2014, 5, 2498–2504, doi:10.3762/bjnano.5.259

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  • occurring within the NWs. Keywords: bandgap; germanium; nanowires; near field; silicon; photoluminescence; Introduction Semiconductor nanowires (NWs) are thought of as promising building blocks for opto-electronic devices that exploit their novel electronic band structures generated by two-dimensional (2D
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Published 30 Dec 2014
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  • metal, semimetal, and semiconductor nanowires in polymeric etched ion-track membranes. Particular focus is given to our current efforts to study the influence of size, morphology and crystallinity of nanowires on electrical, optical and thermal properties. In section 1, we discuss the processes involved
  • phonon scattering come into play. 2.5 Semiconductor nanowires Semiconductor nanowires are excellent candidates to be functional elements in applications as diverse as optics, sensorics, and electronics, and energy applications such as thermoelectrics and hydrogen generation by water splitting [2][3][4
  • ][91]. In the past two decades, enormous progress has been achieved in the synthesizing and characterizing of semiconductor nanowires of controlled size and composition. Synthesis techniques include mostly vapour–liquid–solid growth, solution-phase, lithography, and electroless etching [2][10], while
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Published 17 Dec 2012
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