Advanced hybrid nanomaterials

• Andreas Taubert,
• Fabrice Leroux,
• Pierre Rabu and
• Verónica de Zea Bermudez

Beilstein J. Nanotechnol. 2019, 10, 2563–2567, doi:10.3762/bjnano.10.247

• as insulating gates in organic field-effect transistors (OFETs). Optical properties are the focus in “Ceria/polymer nanocontainers for high-performance encapsulation of fluorophores” [30]. Here, an organic/inorganic system is based on a liquid core containing a fluorophore (terrylene diimide) within

Mobility of charge carriers in self-assembled monolayers

• Zhihua Fu,
• Tatjana Ladnorg,
• Hartmut Gliemann,
• Alexander Welle,
• Asif Bashir,
• Michael Rohwerder,
• Qiang Zhang,
• Björn Schüpbach,
• Andreas Terfort and
• Christof Wöll

Beilstein J. Nanotechnol. 2019, 10, 2449–2458, doi:10.3762/bjnano.10.235

• of charge carriers has been observed in field-effect transistors (FET) made from this compound [32]. Anthracene-2-thiol, obtained by functionalization of anthracene with a thiol group, was used to fabricate SAMs on the top of Au bottom electrodes, which resulted in a beneficial effect on the

Review of advanced sensor devices employing nanoarchitectonics concepts

• Katsuhiko Ariga,
• Tatsuyuki Makita,
• Masato Ito,
• Taizo Mori,
• Shun Watanabe and
• Jun Takeya

Beilstein J. Nanotechnol. 2019, 10, 2014–2030, doi:10.3762/bjnano.10.198

• crystals of dinaphtho[3,4-d:3’,4’-d’]benzo[1,2-b:4,5-b’]dithiophene in organic field effect transistors [85] (Figure 2). At the tensile state of the crystals, the sensitivity to H2S gas at 1 ppm increased by 400% as compared to the original unstressed state. Upon exposure of the sensor crystals to H2S gas

Charge-transfer interactions between fullerenes and a mesoporous tetrathiafulvalene-based metal–organic framework

• Manuel Souto,
• Joaquín Calbo,
• Samuel Mañas-Valero,
• Aron Walsh and
• Guillermo Mínguez Espallargas

Beilstein J. Nanotechnol. 2019, 10, 1883–1893, doi:10.3762/bjnano.10.183

• catalysis [3][4][5]. In addition, electroactive MOFs combining porosity and electrical conductivity [6][7][8] have also attracted much attention during the last years in view of their potential application, for example as chemiresistive sensors [9], field-effect transistors [10] or supercapacitors [11

Synthesis and characterization of quaternary La(Sr)S–TaS₂ misfit-layered nanotubes

• Marco Serra,
• Erumpukuthickal Ashokkumar Anumol,
• Dalit Stolovas,
• Iddo Pinkas,
• Ernesto Joselevich,
• Reshef Tenne,
• Andrey Enyashin and
• Francis Leonard Deepak

Beilstein J. Nanotechnol. 2019, 10, 1112–1124, doi:10.3762/bjnano.10.111

• along two directions, resulting in a closed-cage quasi-spherical nanostructure [6]. Once available in large quantities [7][8], different electrical devices based on single WS2 and MoS2 nanotubes could be realized, including high-performance field effect transistors (FETs) [9][10] and electromechanical

Nanoscale optical and structural characterisation of silk

• Meguya Ryu,
• Reo Honda,
• Adrian Cernescu,
• Arturas Vailionis,
• Armandas Balčytis,
• Jitraporn Vongsvivut,
• Jing-Liang Li,
• Denver P. Linklater,
• Elena P. Ivanova,
• Vygantas Mizeikis,
• Mark J. Tobin,
• Junko Morikawa and
• Saulius Juodkazis

Beilstein J. Nanotechnol. 2019, 10, 922–929, doi:10.3762/bjnano.10.93

• all three dimensions, which is of rapidly growing interest in the field of nanotechnology. Electronic chip manufacturing is currently introducing the sub-10 nm fabrication node (a half pitch of a grating pattern) in the development of 3D fin-gates of field-effect transistors. Nanofabrication

A carrier velocity model for electrical detection of gas molecules

• Ali Hosseingholi Pourasl,
• Sharifah Hafizah Syed Ariffin,
• Mohammad Taghi Ahmadi,
• Razali Ismail and
• Niayesh Gharaei

Beilstein J. Nanotechnol. 2019, 10, 644–653, doi:10.3762/bjnano.10.64

• electrical, physical, and chemical properties of graphene nanoribbons (GNRs) make them very interesting for use in the future generation of the electronic devices, such as field effect transistors (FETs), diodes, capacitors, memories, and sensors [1][2]. Compared to its counterparts, such as silicon

Nanocomposite–parylene C thin films with high dielectric constant and low losses for future organic electronic devices

• Marwa Mokni,
• Gianluigi Maggioni,
• Abdelkader Kahouli,
• Sara M. Carturan,
• Walter Raniero and
• Alain Sylvestre

Beilstein J. Nanotechnol. 2019, 10, 428–441, doi:10.3762/bjnano.10.42

• with 3.8% Ag content. This study provides guidance for future NCPC materials for insulating gates in organic field-effect transistors (OFETs) and advanced electronic applications. Keywords: dielectric; nanocomposite polymer; organic field-effect transistor; parylene C; silver-containing nanoparticle

• organic field-effect transistors (OFETs) [11], organic light-emitting diodes (OLEDs) [12][13], and flexible organic electronic devices (FEDs) [14][15]. It presents an easy deposition process at low temperatures with a conformal and uniform layer [16]. Parylene C is a well-controlled material when used as

Contactless photomagnetoelectric investigations of 2D semiconductors

• Marian Nowak,
• Marcin Jesionek,
• Barbara Solecka,
• Piotr Szperlich,
• Piotr Duka and
• Anna Starczewska

Beilstein J. Nanotechnol. 2018, 9, 2741–2749, doi:10.3762/bjnano.9.256

• ] (ε0ε/we)Vg, where ε0 and ε are the permittivity of free space and the used dielectric, respectively; e is the electron charge; and w is the thickness of the dielectric. The authors of [35] provided the theoretical description of the current compact model of graphene field-effect transistors. In our

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO₂/Si₃N₄-coating

• Dirk König,
• Daniel Hiller,
• Noël Wilck,
• Birger Berghoff,
• Merlin Müller,
• Sangeeta Thakur,
• Giovanni Di Santo,
• Luca Petaccia,
• Joachim Mayer,
• Sean Smith and
• Joachim Knoch

Beilstein J. Nanotechnol. 2018, 9, 2255–2264, doi:10.3762/bjnano.9.210

• ) currently used in ultralarge scale integration (ULSI) faces serious miniaturization challenges below the 14 nm technology node such as dopant out-diffusion and inactivation by clustering in Si-based field-effect transistors (FETs). Moreover, self-purification and massively increased ionization energy cause

• electron microscopy (TEM) and the measurement of the highest occupied DOS over energy for Si-NWell samples embedded in SiO2 or Si3N4 by synchrotron-based long-term UPS. With this experimental confirmation of our h-DFT results, we present the concept of undoped Si-NWire field-effect transistors (FETs). We

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

• Noel Kennedy,
• Ray Duffy,
• Luke Eaton,
• Dan O’Connell,
• Scott Monaghan,
• Shane Garvey,
• James Connolly,
• Chris Hatem,
• Justin D. Holmes and
• Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

• being deemed detrimental to current and future device production. Semiconductor substrates require doping to reduce their resistivity and enable their use in electronic devices such as metal-oxide semiconductor field-effect transistors (MOSFETs). Traditionally, ex situ doping was carried out using ion

Nonlinear effect of carrier drift on the performance of an n-type ZnO nanowire nanogenerator by coupling piezoelectric effect and semiconduction

• Yuxing Liang,
• Shuaiqi Fan,
• Xuedong Chen and
• Yuantai Hu

Beilstein J. Nanotechnol. 2018, 9, 1917–1925, doi:10.3762/bjnano.9.183

• piezoelectric semiconductors can be used to develop many new microelectronic devices with modern functions, for example piezoelectric field-effect transistors [6][7][8][9][10][11], piezoelectric charge-coupled devices [12][13][14][15], piezoelectric chemical sensors [16][17], and nanogenerators made of

The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability

• Hichem Ferhati,
• Fayçal Djeffal and
• Toufik Bentrcia

Beilstein J. Nanotechnol. 2018, 9, 1856–1862, doi:10.3762/bjnano.9.177

• transistors (MOSFETs) and their complements in nanoelectronic circuit designs [1][2][3][4]. In this context, small swing-switch devices such as double-gate tunneling field-effect transistors (DG TFETs) are gaining attention because of their good subthreshold characteristics, high scalability and low OFF

• -effect transistor (JL TFET); nanoscale; SiGe; Introduction In the last years, the continuous miniaturization of nanoscale transistors induces new challenges including short-channel effects (SCEs) and high power consumption, which prevent incorporating conventional metal-oxide semiconductor field-effect

Know your full potential: Quantitative Kelvin probe force microscopy on nanoscale electrical devices

• Amelie Axt,
• Ilka M. Hermes,
• Victor W. Bergmann,
• Niklas Tausendpfund and
• Stefan A. L. Weber

Beilstein J. Nanotechnol. 2018, 9, 1809–1819, doi:10.3762/bjnano.9.172

• electode stripes. This arrangement mimics both the stray field and the potential distribution of flat electronic devices like field effect transistors. Every second electrode on the interdigitated array was grounded (Figure 3) = 0 V, while on the other electrodes the external potential was varied from −3

Free-radical gases on two-dimensional transition-metal disulfides (XS₂, X = Mo/W): robust half-metallicity for efficient nitrogen oxide sensors

• Chunmei Zhang,
• Yalong Jiao,
• Fengxian Ma,
• Sri Kasi Matta,
• Steven Bottle and
• Aijun Du

Beilstein J. Nanotechnol. 2018, 9, 1641–1646, doi:10.3762/bjnano.9.156

• meV and 3 Å, suggesting that water is physically adsorbed on the surface of the WS2 nanosheet. Monolayer MoS2 [38] and multilayer MoS2 field effect transistors [17] for sensing NO at room temperature have been fabricated experimentally. In this work, the ab initio molecular dynamics simulations at

Artifacts in time-resolved Kelvin probe force microscopy

• Sascha Sadewasser,
• Nicoleta Nicoara and
• Santiago D. Solares

Beilstein J. Nanotechnol. 2018, 9, 1272–1281, doi:10.3762/bjnano.9.119

• electrostatic force microscopy (EFM) on organic photovoltaic blends [14][15][16]. By applying a bias pulse to the atomic force microscopy (AFM) tip, Schirmeisen et al. studied the ion transport in solid electrolytes [17]. By applying bias pulses across organic field-effect transistors (OFETs) electronic

The role of ligands in coinage-metal nanoparticles for electronics

• Ioannis Kanelidis and
• Tobias Kraus

Beilstein J. Nanotechnol. 2017, 8, 2625–2639, doi:10.3762/bjnano.8.263

• rings [48], or patterned grids [49] have been fabricated as transparent conductive electrodes. Inks of metal nanoparticles are also good candidates to print electrodes for organic field-effect transistors [50]. Magdassi et al. demonstrated the inkject printing of silver nanowires (Ag NWs) onto plastic

• other solvents using amphiphilic alkylamines of different chain length to create organic dispersions of alkyl-stabilized nanoparticles [90]. Concentrated organic or aqueous dispersions enable particle printing using inkjet technologies, for example; exemplarily, field-effect transistors were inkjet

The interplay between spin densities and magnetic superexchange interactions: case studies of mono- and trinuclear bis(oxamato)-type complexes

• Azar Aliabadi,
• Bernd Büchner,
• Vladislav Kataev and
• Tobias Rüffer

Beilstein J. Nanotechnol. 2017, 8, 2245–2256, doi:10.3762/bjnano.8.224

• ] diamagnetic molecules [23] and even individual single-molecule magnets (SMMs) [24] were already successfully integrated, and spin-organic field-effect transistors [25] or spin-organic light-emitting diodes [26] were developed. Although it remains puzzling to understand the spin-polarized transport phenomena

Substrate and Mg doping effects in GaAs nanowires

• Perumal Kannappan,
• Nabiha Ben Sedrine,
• Jennifer P. Teixeira,
• Maria R. Soares,
• Bruno P. Falcão,
• Maria R. Correia,
• Nestor Cifuentes,
• Emilson R. Viana,
• Marcus V. B. Moreira,
• Geraldo M. Ribeiro,
• Alfredo G. de Oliveira,
• Juan C. González and
• Joaquim P. Leitão

Beilstein J. Nanotechnol. 2017, 8, 2126–2138, doi:10.3762/bjnano.8.212

• the less bound carrier in the radiative state from nanowires grown on GaAs(111)B; and v) a higher influence of defects on the activation of nonradiative de-excitation channels in the case of nanowires only grown on Si(111). Back-gate field effect transistors were fabricated with individual nanowires

• measurements showed a lower influence of the polytypic structure of the nanowires on their electronic structure. The involvement of Mg in one of the radiative transitions observed for growth on the Si(111) substrate is suggested. Keywords: electronic structure; field effect transistors; GaAs nanowires

• -gate field effect transistors (FETs) allowed the estimation of the free hole concentration and the electrical mobility. The photoluminescence (PL) measurements revealed a few radiative transitions. The PL dependence on the excitation power and temperature was performed. The non-radiative de-excitation

Electronic structure, transport, and collective effects in molecular layered systems

• Torsten Hahn,
• Tim Ludwig,
• Carsten Timm and
• Jens Kortus

Beilstein J. Nanotechnol. 2017, 8, 2094–2105, doi:10.3762/bjnano.8.209

• development of further devices. Examples were demonstrated for a wide variety of applications including molecular spin filters [1], single-molecule or thin-film-based field-effect transistors [2][3][4], as well as potential candidates for memory devices utilizing organometallic complexes of

(Metallo)porphyrins for potential materials science applications

• Lars Smykalla,
• Carola Mende,
• Michael Fronk,
• Pablo F. Siles,
• Michael Hietschold,
• Georgeta Salvan,
• Dietrich R. T. Zahn,
• Oliver G. Schmidt,
• Tobias Rüffer and
• Heinrich Lang

Beilstein J. Nanotechnol. 2017, 8, 1786–1800, doi:10.3762/bjnano.8.180

• alternatives for device approaches such as sensors or organic field-effect transistors (OFETs) [57]. The compatibility of (metallo)porphyrin compounds with deposition techniques of organic molecules presents a great potential for the implementation and scaling down of porphyrins into current device fabrication

Group-13 and group-15 doping of germanane

• Nicholas D. Cultrara,
• Maxx Q. Arguilla,
• Shishi Jiang,
• Chuanchuan Sun,
• Michael R. Scudder,
• R. Dominic Ross and
• Joshua E. Goldberger

Beilstein J. Nanotechnol. 2017, 8, 1642–1648, doi:10.3762/bjnano.8.164

• need of extrinsic dopants to access devices with lower resistivity. In previous studies, the resistivity of germanane was reduced through the incorporation of phosphorus only when activated in the presence of atmospheric water [29]. Recently [30], undoped germanane field-effect transistors were

Parylene C as a versatile dielectric material for organic field-effect transistors

• Tomasz Marszalek,
• Maciej Gazicki-Lipman and
• Jacek Ulanski

Beilstein J. Nanotechnol. 2017, 8, 1532–1545, doi:10.3762/bjnano.8.155

• for applications in flexible organic electronics, is presented. A synthesis and basic properties of Parylene C are described, followed by several examples of use of parylenes as substrates, dielectrics, insulators, or protecting materials in the construction of organic field-effect transistors

• organic field effect transistors is the work of Podzorov et al. describing rubrene single-crystal transistors with Parylene C used as the gate insulating material [2]. This configuration allowed the authors to fabricate OFET devices with high charge-carrier mobility and reproducible characteristics

Light-induced magnetoresistance in solution-processed planar hybrid devices measured under ambient conditions

• Sreetama Banerjee,
• Daniel Bülz,
• Danny Reuter,
• Karla Hiller,
• Dietrich R. T. Zahn and
• Georgeta Salvan

Beilstein J. Nanotechnol. 2017, 8, 1502–1507, doi:10.3762/bjnano.8.150

• -pentacene film. Keywords: HED-TIEs; hybrid electronic devices; organic field-effect transistors (OFETs); organic magnetoresistance; planar hybrid devices; TIPS-pentacene; Findings The field of molecular spintronics has received lot of research interest in the last years because of the possibility of

• devices, in which the active organic layer is sandwiched between two conductive metal layers [3][4][8]. Saragi et al. carried out studies on the magnetic field effect on three terminal bottom-contact organic field-effect transistors (OFET) and showed the existence of light-induced magnetoresistance in

Synthesis, spectroscopic characterization and thermogravimetric analysis of two series of substituted (metallo)tetraphenylporphyrins

• Rasha K. Al-Shewiki,
• Carola Mende,
• Roy Buschbeck,
• Pablo F. Siles,
• Oliver G. Schmidt,
• Tobias Rüffer and
• Heinrich Lang

Beilstein J. Nanotechnol. 2017, 8, 1191–1204, doi:10.3762/bjnano.8.121

• , which were based on tris(8-hydroxyquinolinato)aluminium (Alq3) sandwiched between La2/3Sr1/3MnO3 and cobalt electrodes, was reported more than a decade ago [5]. This finding motivated the development of further novel devices as, for example, spin-OFETs (organic field effect transistors) [4]. The nature