Exploring surface charge dynamics: implications for AFM height measurements in 2D materials

• Mario Navarro-Rodriguez,
• Andres M. Somoza and
• Elisa Palacios-Lidon

Beilstein J. Nanotechnol. 2024, 15, 767–780, doi:10.3762/bjnano.15.64

• SI.1 of Supporting Information File 1. Beyond their significance in various applications such as materials science, electronics, and biomedicine [70], these materials serve as benchmark systems for fundamental studies in 2D materials because of their markedly distinct properties [71]. Specifically

• conducted at RH < 10% to minimize any potential influence of this effect, although no significant differences were observed compared to measurements at 45% RH. Additionally, KPFM operation does not seem to play a crucial role in this specific situation (see Supporting Information File 1, section SI.2

• charging the flakes through bringing the tip into contact while applying an external bias voltage to the tip [78] (see Supporting Information File 1, section SI.3 for further details). Following the charging process, without activating the KPFM feedback (Figure 2a), there is a noticeable increase in the

Effect of repeating hydrothermal growth processes and rapid thermal annealing on CuO thin film properties

• Monika Ozga,
• Eunika Zielony,
• Aleksandra Wierzbicka,
• Anna Wolska,
• Marcin Klepka,
• Marek Godlewski,
• Bogdan J. Kowalski and
• Bartłomiej S. Witkowski

Beilstein J. Nanotechnol. 2024, 15, 743–754, doi:10.3762/bjnano.15.62

• spectrum as there are four atoms in the primitive cell. Out of these modes, only the Ag and two Bg modes are Raman-active. The next three modes (Au + 2Bu) are acoustic, whereas six modes (3Au + 3Bu) are IR-active [56][57]. Figure 5 shows the Raman spectra measured for as-grown, 2× and 3× CuO/Si samples. A

• reference sample (Si ref.), which was a pure silicon wafer, was also studied for comparison (Figure 5A). Comparing the Raman spectra of CuO/Si samples with the spectrum of the Si reference sample, one can notice a dominating phonon mode at a frequency of 521 cm−1 originating from the silicon substrate [57

• the CuO-like phonon mode frequencies that have been documented by other authors [56][58][59][60]. Thus, the obtained results confirm the cupric phase of the copper oxide layer. After comparing the Raman spectra of all CuO/Si structures, it can be noticed that the 2× and 3× samples exhibit the best

Level set simulation of focused ion beam sputtering of a multilayer substrate

• Alexander V. Rumyantsev,
• Nikolai I. Borgardt,
• Roman L. Volkov and
• Yuri A. Chaplygin

Beilstein J. Nanotechnol. 2024, 15, 733–742, doi:10.3762/bjnano.15.61

• of them is the flux of sputtered particles. For a multilayer structure, it can be presented by the extension of the well-known expression [21] as where denotes the flux of sputtered atoms of the i-th material with i = 1 for SiO2 and i = 2 for Si. In the case considered, it is equal to where μi = [Yr

• computational grid. The experimental angular dependences of the sputtering yield [24] and YSi(θ) [34] were used for the calculations of Fsp,i with μi values of 0.15 for SiO2 (i =1) [24] and 0.3 for Si (i = 2) [35]. The function at t=0 was specified by the structure of the Si substrate covered by a SiO2 layer

• sputtered atoms and backscattered ions differed slightly for Si and SiO2, and an idea of the form of these distributions is given by the plots presented in [36]. Although the functions found by Monte Carlo simulations described the angular distribution of sputtered atoms more realistically, the

Elastic modulus of β-Ga₂O₃ nanowires measured by resonance and three-point bending techniques

• Annamarija Trausa,
• Sven Oras,
• Sergei Vlassov,
• Mikk Antsov,
• Tauno Tiirats,
• Andreas Kyritsakis,
• Boris Polyakov and
• Edgars Butanovs

Beilstein J. Nanotechnol. 2024, 15, 704–712, doi:10.3762/bjnano.15.58

• -Ga2O3 NW synthesis methods and detailed post-examination of their mechanical properties before considering their application in future nanoscale devices. Results For structural analysis of the as-grown NW arrays on Si(100)/SiO2 substrates, X-ray diffraction (XRD) measurements were conducted. The marked

• peaks are associated with monoclinic β-Ga2O3 (ICDD-PDF #41–1103), as indicated in Figure 1a, while the Bragg peak at around 33 degrees corresponds to the Si substrate (forbidden Si(200) reflection). Furthermore, transmission electron microscopy (TEM) was used to study the inner crystalline structure of

• pressure chemical vapour transport in a horizontal quartz tube reactor (18 mm inner diameter) according to the method reported in [2]. The process involved loading a ceramic boat with 0.15 g of Ga2O3 powder (99.99%, Alfa Aesar) at the centre of the quartz tube. Oxidised silicon wafers SiO2/Si (100) coated

AFM-IR investigation of thin PECVD SiO_x films on a polypropylene substrate in the surface-sensitive mode

• Hendrik Müller,
• Hartmut Stadler,
• Teresa de los Arcos,
• Adrian Keller and
• Guido Grundmeier

Beilstein J. Nanotechnol. 2024, 15, 603–611, doi:10.3762/bjnano.15.51

• level spectra, a Shirley type background was used. The Si 2p peak was fitted with doublet peaks with a Si 2p3/2-1/2 splitting of 0.6 eV [18]. Results and Discussion XPS analysis The XPS data in Figure 2 and Figure 3 show that the deposition of silicon oxide thin films was successful. In the survey

• nm SiOx layer, the C 1s is a mixture of adventitious carbon and the signal from the underlying polypropylene substrate. The core levels of O 1s, C 1s, and Si 2p are shown in Figure 2 and Figure 3. In the figures, the spectra are arbitrarily charge corrected by fixing the binding energy of the Si 2p

• Si 2p peaks. The O 1s–Si 2p distance is 429.6 eV for the 50 nm film and 429.9 eV for the 5 nm film. This is in good agreement with values found in the literature for the PECVD deposition of SiOx films from HMDSO/O2/Ar gas mixtures [21]. A comparison of the relative intensities of the O 1s and Si 2p

Stiffness calibration of qPlus sensors at low temperature through thermal noise measurements

• Laurent Nony,
• Sylvain Clair,
• Daniel Uehli,
• Aitziber Herrero,
• Jean-Marc Themlin,
• Andrea Campos,
• Franck Para,
• Alessandro Pioda and
• Christian Loppacher

Beilstein J. Nanotechnol. 2024, 15, 580–602, doi:10.3762/bjnano.15.50

• include the contribution of the tip. The qPlus sensor is assumed to be in thermal equilibrium at T = 9.8 K. The temperature is measured within the head of the microscope by a Si diode and readout by a Lakeshore 335 Controller. The microscope being in closed-cycle has been thermalized at that temperature

Directed growth of quinacridone chains on the vicinal Ag(35 1 1) surface

• Niklas Humberg,
• Lukas Grönwoldt and
• Moritz Sokolowski

Beilstein J. Nanotechnol. 2024, 15, 556–568, doi:10.3762/bjnano.15.48

• same time, the surface also exhibits flat areas with wide terraces of up to 300 Å in width. This can also be seen in the STM image. A similar type of step width distribution was also found for various other surfaces, for example, Cu(11n) [33] with n = 5, 9, 17, and Si(100) as well as Si(111) [34

On the additive artificial intelligence-based discovery of nanoparticle neurodegenerative disease drug delivery systems

• Shan He,
• Julen Segura Abarrategi,
• Harbil Bediaga,
• Sonia Arrasate and
• Humberto González-Díaz

Beilstein J. Nanotechnol. 2024, 15, 535–555, doi:10.3762/bjnano.15.47

• ) and n(cn4) = 16 coating agents (UC, PEG-Si(OMe)3, PVA, sodium citrate, 11-mercaptoundecanoic acid, PVP, propylamonium fragment, undecylazide fragment, CTAB, N,N,N-trimethyl-3(1-propene) ammonium fragment, potato starch, N-acetylcysteine, CMC-90, 2,3-dimercaptopropanesulfonate, 3

• fragment, and UAF = undecylazide fragment. The symbol UC = uncoated represents non-coated N2D3Ss. Interestingly, a high value of prediction involves PEG-Si(OMe)3 as NP coating with p(N2D3Sin)cdj.cnj = 0.80–0.99 for the majority of NDDs. Another important factor that may affect the value of probability is

• the type of NP. It appears that metal oxide compounds such as SiO2 and TiO2 along with PEG-Si(OMe)3NP coating for almost all NDDs are likely to be promising for further assays. Double metal oxide compounds such as CoFe2O4 and ZnFe2O4 obtained intermediate probability values p(N2D3Sin)cdj.cnj = 0.17

Electron-induced deposition using Fe(CO)₄MA and Fe(CO)₅ – effect of MA ligand and process conditions

• Hannah Boeckers,
• Atul Chaudhary,
• Petra Martinović,
• Amy V. Walker,
• Lisa McElwee-White and
• Petra Swiderek

Beilstein J. Nanotechnol. 2024, 15, 500–516, doi:10.3762/bjnano.15.45

• ) trifluoroacetylacetonate (Au(tfac)Me2) [16] or neopentasilane (Si5H12) [17] to produce Fe–Au alloy nanostructures and Fe–Si binary compounds, respectively. More recently, diiron nonacarbonyl (Fe2(CO)9) has received particular attention [5][6][18][19][20]. With this precursor and applying high beam energies, nanopillars

• from the complex. This has, for instance, been shown for the case of Cu(I)(hfac)VTMS (hfac = hexafluoroacetylacetonate, VTMS = vinyltrimethylsilane, H2C=CH-Si(CH3)3) [3][49]. Therefore, we explore herein the electron-induced decomposition of a novel Fe precursor with an olefin ligand and a reduced

Aero-ZnS prepared by physical vapor transport on three-dimensional networks of sacrificial ZnO microtetrapods

• Veaceslav Ursaki,
• Tudor Braniste,
• Victor Zalamai,
• Emil Rusu,
• Vladimir Ciobanu,
• Vadim Morari,
• Daniel Podgornii,
• Pier Carlo Ricci,
• Rainer Adelung and
• Ion Tiginyanu

Beilstein J. Nanotechnol. 2024, 15, 490–499, doi:10.3762/bjnano.15.44

• devices, and in other specific applications, such as electromagnetic interference shielding and microwave absorbing materials. Among inorganic porous materials, several groups predominate, such as metal halide perovskites (MHP) [1], Si and III–V semiconductors [2][3][4][5][6], chalcogenides [7][8][9], and

• selected to focus the light on the sample surface. The system calibration was performed on a monocrystalline Si wafer with the main peak measured at 521 cm−1. A 1200 gr/mm grating with a resolution of 1 cm−1 was utilized. SEM images of ZnS microtetrapods obtained from ZnO microtetrapods after a

Sidewall angle tuning in focused electron beam-induced processing

• Sangeetha Hari,
• Willem F. van Dorp,
• Johannes J. L. Mulders,
• Piet H. F. Trompenaars,
• Pieter Kruit and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2024, 15, 447–456, doi:10.3762/bjnano.15.40

• coating ensures a strong SE contrast with the carbon deposit due to its significantly higher SE yield, and it prevents the eventual electron beam-induced decomposition of the native oxide layer of the Si substrate. For the carbon deposition, dodecane was used as a precursor. For FEBIE, water was chosen as

• within which SE2 are created is larger in the Si substrate than in the C deposit (2.7 and 1.6 μm, respectively [24]). Note that the thin Au–Pd and Ti coating is ignored here, as most of the interaction volume will be in the underlying Si substrate at 20 keV. Therefore, the width of the distribution of SE

Heat-induced morphological changes in silver nanowires deposited on a patterned silicon substrate

• Elyad Damerchi,
• Sven Oras,
• Edgars Butanovs,
• Allar Liivlaid,
• Mikk Antsov,
• Boris Polyakov,
• Annamarija Trausa,
• Veronika Zadin,
• Andreas Kyritsakis,
• Loïc Vidal,
• Karine Mougin,
• Siim Pikker and
• Sergei Vlassov

Beilstein J. Nanotechnol. 2024, 15, 435–446, doi:10.3762/bjnano.15.39

• for various novel applications where arrays of metal nanostructures are used, such as surface-enhanced Raman spectroscopy substrates [36][37][38]. In this work, we deposited Ag NWs on specially patterned silicon (Si) substrates, so large fractions of NWs are partially suspended over the holes. Samples

• , which corresponds to the angle between (111) and (001) planes in Si. Samples for heat-treatment studies were prepared by drop-casting Ag NWs onto the patterned substrates from a solution. Since the width and period of the holes were intentionally made much smaller than the average length of NWs, many

• comparison with the work by Vigonski et al. [27] who used the same Ag NWs and heating methods for heat-treatment experiments of a flat Si substrate. Two heating schemes were implemented: In the scheme 1 (Figure 2), heating was applied in 10 min cycles at fixed temperatures followed by cooling to room

Classification and application of metal-based nanoantioxidants in medicine and healthcare

• Nguyen Nhat Nam,
• Nguyen Khoi Song Tran,
• Tan Tai Nguyen,
• Nguyen Ngoc Trai,
• Nguyen Phuong Thuy,
• Hoang Dang Khoa Do,
• Nhu Hoa Thi Tran and
• Kieu The Loan Trinh

Beilstein J. Nanotechnol. 2024, 15, 396–415, doi:10.3762/bjnano.15.36

• University, 1342 Seongnam-daero, Sujeong-gu, Seongnam-si 13120, Republic of Korea Department of Materials Science, School of Applied Chemistry, Tra Vinh University, Tra Vinh City 87000, Vietnam NTT Hi-Tech Institute, Nguyen Tat Thanh University, Ward 13, District 04, Ho Chi Minh City 70000, Vietnam Faculty

• of Materials Science and Technology, University of Science, Ho Chi Minh City, Vietnam Vietnam National University Ho Chi Minh City, Vietnam BioNano Applications Research Center, Gachon University, 1342 Seongnam-daero, Sujeong-gu, Seongnam-si 13120, Republic of Korea 10.3762/bjnano.15.36 Abstract

• apolipoprotein A-I and facilitates atherosclerosis [190]. Si nanoparticles were reported for their ability to invade the cytoplasm, modify the intracellular microstructure, and promote inflammatory reactions through activating NLRP3 inflammasomes [191]. Also, in an animal experiment, SiO2 nanoparticles induce

On the mechanism of piezoresistance in nanocrystalline graphite

• Sandeep Kumar,
• Simone Dehm and
• Ralph Krupke

Beilstein J. Nanotechnol. 2024, 15, 376–384, doi:10.3762/bjnano.15.34

• ][22]. The preliminary work on the piezoresistivity of NCG looked promising but was limited regarding the applied strain because of rigid SiO2/Si substrates. In this work, we focus on the piezoresistance measurements in NCG at larger strain values. Initially, a two-point bending setup is described

• . Experimental Piezoresistance measurements NCG was synthesized on a 300 nm SiO2/Si substrate by spin coating S1805 (1:10 dilution with propylene glycol methyl ether acetate, PGMEA) at 4000 rpm. The spin-coated Si/SiO2 substrate was loaded in a vacuum furnace and annealed at 600 °C for 10 h at 10−6 mbar. The

• measured thickness of the grown film was ca. 5 nm. The NCG film was then transferred onto a 100 μm thick PET substrate. For the transfer process, first, the NCG film on SiO2/Si was coated with 200 nm thick PMMA and put into 5 M NaOH solution at 80 °C. The NCG/PMMA film floats on the surface after the

Investigating ripple pattern formation and damage profiles in Si and Ge induced by 100 keV Ar⁺ ion beam: a comparative study

• Indra Sulania,
• Harpreet Sondhi,
• Tanuj Kumar,
• Sunil Ojha,
• G R Umapathy,
• Ambuj Mishra,
• Ambuj Tripathi,
• Richa Krishna,
• Devesh Kumar Avasthi and
• Yogendra Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 367–375, doi:10.3762/bjnano.15.33

• fabrication on Si and Ge by 100 keV Ar+ ion beam bombardment is discussed. The irradiation was performed in the ion fluence range of ≈3 × 1017 to 9 × 1017 ions/cm2 and at an incident angle of θ ≈ 60° with respect to the surface normal. The investigation focuses on topographical studies of pattern formation

• using atomic force microscopy, and induced damage profiles inside Si and Ge by Rutherford backscattering spectrometry and transmission electron microscopy. The ripple wavelength was found to scale with ion fluence, and energetic ions created more defects inside Si as compared to that of Ge. Although

• earlier reports suggested that Ge is resistant to structural changes upon Ar+ ion irradiation, in the present case, a ripple pattern is observed on both Si and Ge. The irradiated Si and Ge targets clearly show visible damage peaks between channel numbers (1000–1100) for Si and (1500–1600) for Ge. The

Modulated critical currents of spin-transfer torque-induced resistance changes in NiCu/Cu multilayered nanowires

• Mengqi Fu,
• Roman Hartmann,
• Julian Braun,
• Sergej Andreev,
• Torsten Pietsch and
• Elke Scheer

Beilstein J. Nanotechnol. 2024, 15, 360–366, doi:10.3762/bjnano.15.32

• vertically patterned magnetic nanowires on a Si substrate. With this approach we fabricated three-dimensional nanowire-based spin valve devices without the need of complex etching processes or additional spacer coating. Through this method, we successfully obtained NiCu/Cu multilayered nanowire arrays with a

• fabricated through a newly developed method, which enables to selectively deposit the magnetic nanowires on the Si substrate and to fabricate three-dimensional (3D) devices contacting a few or even single nanowires without complex etching processes [17] or additional spacer coating [18][19]. Results and

• Discussion The AAO template was fabricated by directly anodizing a ca. 1 µm thick aluminum (Al) film on a silicon (Si) substrate covered with 200 nm SiO2 and patterned Ti/Au (5/50 nm) bottom electrodes. It has pores with a diameter of around 35 nm, an interpore distance of around 50 nm, and a height of

Controllable physicochemical properties of WO_x thin films grown under glancing angle

• Rupam Mandal,
• Aparajita Mandal,
• Alapan Dutta,
• Rengasamy Sivakumar,
• Sanjeev Kumar Srivastava and
• Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

• property modulations of the as-deposited and annealed films. The analyses show a reasonably good correlation with photoelectron spectroscopic measurements on the films and the bulk I–V characteristics acquired on a series of WOx/p-Si heterojunction diodes. The presence of a critical WOx thickness is

• identified to regulate the rectification ratio values at the WOx/p-Si heterostructures and increase in series resistance within the bulk of the films. The present study provides valuable insights to correlate optical, electrical, and structural properties of WOx thin films, which will be beneficial for

• , heterostructures having an n-type WOx layer on various p-type substrates such as p-Si [12][13], Cu2O [14], NiO [15], p-ZnO nanowires (NWs) [16], diamond [17], and BiVO4 [18], have a great technological importance in the field of heterojunction solar cells, LEDs, and resistance random access memory (RRAM) devices

Comparative electron microscopy particle sizing of TiO₂ pigments: sample preparation and measurement

• Ralf Theissmann,
• Christopher Drury,
• Markus Rohe,
• Thomas Koch,
• Jochen Winkler and
• Petr Pikal

Beilstein J. Nanotechnol. 2024, 15, 317–332, doi:10.3762/bjnano.15.29

• both MinFeret and MaxFeret (Cauchy). These were then compared with nitrogen absorption (BET) measurements. Surface area and volume were calculated for each measured particle and the SSA was calculated using the following formula: where Si is the surface area of the i-th particle, Vi is volume of the i

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS₂ thin films with domains much smaller than the laser spot size

• Felipe Wasem Klein,
• Jean-Roch Huntzinger,
• Vincent Astié,
• Damien Voiry,
• Romain Parret,
• Houssine Makhlouf,
• Sandrine Juillaguet,
• Jean-Manuel Decams,
• Sylvie Contreras,
• Périne Landois,
• Ahmed-Azmi Zahab,
• Jean-Louis Sauvajol and
• Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

• SiO2 on Si substrates. Then, we discuss the applicability of the same criteria for significantly different DLI-PP-CVD MoS2 samples with average thicknesses ranging from sub-monolayer up to three layers. Finally, an original procedure based on the measurement of the intensity of the layer breathing

• growth of wafer-scale MoS2 thin films on SiO2/Si substrates by direct liquid injection pulsed-pressure chemical vapor deposition (DLI-PP-CVD) using low-toxicity precursors [27]. Such MoS2 thin films showed good stoichiometry (Mo/S = 1.94–1.95) and the potential for high photoluminescence quantum yield

• samples are well-characterized, either mechanically exfoliated or standard CVD MoS2 large flakes deposited on 90 ± 6 nm SiO2 on Si substrates. Then, we determine which Raman information is relevant to estimate the average thickness of MoS2 samples produced by the DLI-PP-CVD method, which are constituted

Design, fabrication, and characterization of kinetic-inductive force sensors for scanning probe applications

• August K. Roos,
• Ermes Scarano,
• Elisabet K. Arvidsson,
• Erik Holmgren and
• David B. Haviland

Beilstein J. Nanotechnol. 2024, 15, 242–255, doi:10.3762/bjnano.15.23

• nitride (Nb-Ti-N) [20][25], or granular aluminum (grAl) [26][27], wolfram (W) [28], and silicon doped with boron (Si:B) [29]. Results and Discussion Figure 1 gives an overview of our fabricated sensor, showing the main components. The cantilever is a 600 nm thick Si-N triangular plate released from a much

• thicker silicon (Si) support, as shown in Figure 1a and Figure 1g. Figure 1a shows the microwave resonant circuit with its interdigital capacitor in series with the nanowire inductor. The meandering nanowire is placed at the base of the cantilever as shown in Figure 1c, in the area of largest strain

• increases because of increasing quasiparticle population, leading us to select Nb-Ti-N with its high (bulk) critical temperature Tc ≈ 14 K. Mechanical simulations Several considerations determine the design of the Si-N cantilever in the scanning force sensor. The Si-N plate thickness is fixed when

Quantitative wear evaluation of tips based on sharp structures

• Ke Xu and
• Houwen Leng

Beilstein J. Nanotechnol. 2024, 15, 230–241, doi:10.3762/bjnano.15.22

• optimizing scan parameters to minimize tip wear while maintaining high-quality AFM imaging. All wear test experiments were conducted using a new needle tip to scan samples of a Si sample coated with gold. The needle tip diameters in each group of experiments were kept similar, avoiding the impact of

Multiscale modelling of biomolecular corona formation on metallic surfaces

• Parinaz Mosaddeghi Amini,
• Ian Rouse,
• Julia Subbotina and
• Vladimir Lobaskin

Beilstein J. Nanotechnol. 2024, 15, 215–229, doi:10.3762/bjnano.15.21

• employ SI units in the above calculation, noting that ka must then be multiplied by 1000 to convert from units m3·mol−1 to L·mol−1. Desorption rates are found by requiring that where Eads is the value obtained for that orientation using UnitedAtom [45]. A concentration is then assigned to the adsorbate

Ion beam processing of DNA origami nanostructures

• Leo Sala,
• Agnes Zerolová,
• Violaine Vizcaino,
• Alain Mery,
• Alicja Domaracka,
• Hermann Rothard,
• Philippe Boduch,
• Dominik Pinkas and
• Jaroslav Kocišek

Beilstein J. Nanotechnol. 2024, 15, 207–214, doi:10.3762/bjnano.15.20

• nanopatterning approach. Direct combination of this approach with top-down nanotechnology, such as ion beams, has not been considered because of the soft nature of the DNA material. Here we demonstrate that the shape of 2D DNA origami nanostructures deposited on Si substrates is well preserved upon irradiation

• by ion beams, modeling ion implantation, lithography, and sputtering conditions. Structural changes in 2D DNA origami nanostructures deposited on Si are analyzed using AFM imaging. The observed effects on DNA origami include structure height decrease or increase upon fast heavy ion irradiation in

• nanometer scale and the nanometric precision of DNA origami-based assembly open possibilities in more precise tuning and control of nanofabrication. Here we analyze the consequences of ion beam irradiation on 2D DNA origami nanotriangles deposited on Si as a model substrate and resulting nanostructure

Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO₂ substrates

• Aleksandra Szkudlarek,
• Jan M. Michalik,
• Inés Serrano-Esparza,
• Zdeněk Nováček,
• Veronika Novotná,
• Piotr Ozga,
• Czesław Kapusta and
• José María De Teresa

Beilstein J. Nanotechnol. 2024, 15, 190–198, doi:10.3762/bjnano.15.18

• of concept of water-assisted graphene etching. Moreover, the effects of changes in the topography of Si/SiO2 substrate during this process have not been addressed so far, as they may be observed only under certain experimental conditions. In a standard scanning electron microscope, the morphological

• the dissociated products of residual water molecules was not provided. An emission of charged Si and O ions from the SiO2 surface upon electron exposure was studied in the 1990s. This phenomenon, known as electron-stimulated desorption (ESD) was observed in UHV conditions by Baragiola et al. [25] and

• Chen et al. [26] as an effect of the interaction with strong trapped charges (holes), although under much higher electron doses (>3 × 106 nC/μm2) or beam currents (> μA) compared to those used in our studies. For this work, we selected high-quality graphene, mechanically exfoliated onto a SiO2/Si

Modification of graphene oxide and its effect on properties of natural rubber/graphene oxide nanocomposites

• Nghiem Thi Thuong,
• Le Dinh Quang,
• Vu Quoc Cuong,
• Cao Hong Ha,
• Nguyen Ba Lam and
• Seiichi Kawahara

Beilstein J. Nanotechnol. 2024, 15, 168–179, doi:10.3762/bjnano.15.16

• recorded with a solid CP/MAS probe. In 29Si NMR spectra, the complete hydrolysis and condensation of VTES will result in the signal T3, corresponding to the R-Si(OSi)3 structure, and the incomplete hydrolysis and condensation of VTES will be accompanied by the T2 signal, which corresponds to R–Si(OSi

• )2OC2H5 or R–Si(OSi)2OH. As shown in Figure 4, two signals appeared at chemical shifts −69 and −79 ppm. The signal at −69 ppm was assigned to the Si atom in the T2 structure (i.e., CH2=CH–Si(O–Si)2(OC2H5) or CH2=CH–Si(O–Si)2(OH)). On the other hand, the signal at −79 ppm was assigned to the Si atom in the

• T3 structure (i.e., CH2=CH–Si(O–Si)3) [17]. It was noted that the intensity ratios of T3 to T2 signals for GO-VTES(b) were higher than that of GO-VTES(a). The higher intensity ratios of the T3 to T2 signals demonstrated that hydrolysis and condensation were more completed in GO-VTES(b) than in GO