Humidity-dependent electrical performance of CuO nanowire networks studied by electrochemical impedance spectroscopy

• Jelena Kosmaca,
• Juris Katkevics,
• Jana Andzane,
• Raitis Sondors,
• Liga Jasulaneca,
• Raimonds Meija,
• Kiryl Niherysh,
• Yelyzaveta Rublova and
• Donats Erts

Beilstein J. Nanotechnol. 2023, 14, 683–691, doi:10.3762/bjnano.14.54

• of nanostructured CuO, and indicate directions for further applications in humidity sensors and other systems with nanowire interconnects. Results and Discussion The synthesized CuO nanowires (Figure 1a) were assembled between arrays of lithographically defined Au microelectrodes on a Si/SiO2 chip

• naturally. The substrates were submerged in pure isopropanol (IPA) and ultrasonicated for 3 s to release the CuO nanowires. These nanowires were assembled on arrays of Cr/Au (3/60 nm) microelectrodes lithographically pre-patterned on a commercially available Si/SiO2 wafer substrate (MTI Corporation) diced

Transferability of interatomic potentials for silicene

• Marcin Maździarz

Beilstein J. Nanotechnol. 2023, 14, 574–585, doi:10.3762/bjnano.14.48

• -principles method and then to test the ability of different interatomic potentials to reproduce these properties. Methods Analyzing the available literature concerning all phases of single-layer Si, it is not feasible to find all structural, mechanical, and phonon data obtained in one consistent way. The

• ] as an exchange–correlation functional, and optimized norm-conserving Vanderbilt pseudopotential [22] (ONCVPP) are similar. Cut-off energy and electron configuration of Si were used in the DFT calculations according to the pseudopotential and Gaussian smearing scheme with tsmear (Ha) = 0.02. To

• embedded-atom method (MEAM) potential for Si fitted to silicon interstitials SW1985 [38]: the Stillinger–Weber (SW) potential fitted to solid and liquid forms of Si SW2014 [39]: the Stillinger–Weber (SW) potential fitted to phonon dispersion curves of a single-layer Si sheet EDIP [40]: the environment

ZnO-decorated SiC@C hybrids with strong electromagnetic absorption

• Liqun Duan,
• Zhiqian Yang,
• Yilu Xia,
• Xiaoqing Dai,
• Jian’an Wu and
• Minqian Sun

Beilstein J. Nanotechnol. 2023, 14, 565–573, doi:10.3762/bjnano.14.47

• of Si atoms from SiCnw in the carbonization atmosphere containing a low concentration of chlorine gas [24]. Figure 2 shows TEM and HRTEM images of the final SiC@C-ZnO samples. The SCZ samples are composed of SiC, carbon, and ZnO particles. Obviously, the hybrids are characterized by SiC cores and

• elements (C, Si, O, and Zn) have been determined by XPS in all SCZ samples, as shown in Figure 3. The survey scans of the SCZ samples exhibit major peaks assigned to C 1s (ca. 284 eV), O 1s (ca. 532 eV), Si 2p (ca. 100 eV), Zn 2p (ca. 1022 eV and ca. 1045 eV). The two Zn 2p peaks correspond to Zn 2p3/2 and

• results. In contrast, the relative intensities of the Si 2p and C 1s peaks gradually decrease at the same time. The peaks at 100 and 103.5 eV are related to Si 2p1/2 and Si 2p3/2, respectively. Table 1 provides the elemental compositions (atom %) on the SCZ sample surfaces as determined by XPS. The

SERS performance of GaN/Ag substrates fabricated by Ag coating of GaN platforms

• Magdalena A. Zając,
• Bogusław Budner,
• Malwina Liszewska,
• Bartosz Bartosewicz,
• Łukasz Gutowski,
• Jan L. Weyher and
• Bartłomiej J. Jankiewicz

Beilstein J. Nanotechnol. 2023, 14, 552–564, doi:10.3762/bjnano.14.46

• substrates fabricated using both methods, we attempted to prepare substrates with a comparable amount of deposited Ag, which was examined and controlled using atomic force microscopy (AFM). For this purpose, additional Ag layers were deposited on flat Si substrates. Based on the measured thickness of the Ag

• approximately 423 ± 5 nm thickness on a flat Si surface. In our studies, plasmonic metal was additionally deposited using one shorter and two longer deposition times to obtain GaN/Ag substrates with thinner and thicker Ag layers. As a result, GaN/Ag substrates were prepared with Ag layers deposited for 140, 280

• , 420, and 560 s, that is, with Ag layer thicknesses of 212 ± 2, 423 ± 5, 627 ± 4, and 833 ± 4 nm, respectively. The above thickness values were directly measured on a flat Si platform coated in the same processes as the GaN platforms. However, due to the different surface morphology of GaN platforms

On the use of Raman spectroscopy to characterize mass-produced graphene nanoplatelets

• Keith R. Paton,
• Konstantinos Despotelis,
• Naresh Kumar,
• Piers Turner and
• Andrew J. Pollard

Beilstein J. Nanotechnol. 2023, 14, 509–521, doi:10.3762/bjnano.14.42

• extinction at 660 nm and using an extinction coefficient of 4237 mL·mg−1·m−1 [28] yielded a concentration of 0.028 mg·mL−1. To characterize the thickness of the particles in GNPref, the dispersion was drop-cast on to a cleaned Si/SiO2 (300 nm thick oxide layer) wafer. Before deposition, the dispersion was

• diluted by a factor of 10 in fresh NMP. 10 μL of the diluted dispersion was then drop-cast on a Si/SiO2 wafer at a temperature of 200 °C. To remove residual NMP, the sample was dried overnight in a vacuum oven at 60 °C. AFM measurements of the deposited flakes were carried out using Cypher AFM (Asylum

• Research, Oxford Instruments, UK). AFM images were recorded using Si AFM probes (MikroMasch HQ:NSC15, 40 N/m, 325 kHz, MikroMasch, Bulgaria) in tapping-mode feedback. AFM images were measured in square areas between 6 μm × 6 μm and 8 μm × 8 μm using 1024 × 1024 pixels with a scan speed below 20 μm·s−1. To

A mid-infrared focusing grating coupler with a single circular arc element based on germanium on silicon

• Xiaojun Zhu,
• Shuai Li,
• Ang Sun,
• Yongquan Pan,
• Wen Liu,
• Yue Wu,
• Guoan Zhang and
• Yuechun Shi

Beilstein J. Nanotechnol. 2023, 14, 478–484, doi:10.3762/bjnano.14.38

• , Nanjing University, Nanjing 210093, China 10.3762/bjnano.14.38 Abstract A mid-infrared (MIR) focusing grating coupler (FGC) with a single circular arc element (CAE) in the front of the gratings based on a germanium-on-silicon (Ge-on-Si) platform is designed and demonstrated. It can be used equivalently

• knowledge, it is the highest coupling efficiency in a full-etch grating coupler based on Ge-on-Si. Moreover, the proposed grating coupler can be used for refractive index (RI) sensing, and the maximum sensitivity is 980.7 nm/RIU when the RI changes from 1 to 1.04. By comparing with traditional grating

• cover the wavelength of 6–15 μm. Hence, it is a suitable material for biosensors applications in the MIR band [6]. In recent years, researchers have verified the feasibility of Ge MIR waveguides on various substrate materials, such as germanium on silicon (Ge-on-Si), germanium on silicon-on-insulator

Molecular nanoarchitectonics: unification of nanotechnology and molecular/materials science

• Katsuhiko Ariga

Beilstein J. Nanotechnol. 2023, 14, 434–453, doi:10.3762/bjnano.14.35

• boron site embedded at the center of the graphene nanoribbon was investigated. Si atoms were removed by vertical manipulation with a tip (Figure 5). In this manipulation, the tip was positioned at a silicon site and then moved closer to the silicon atoms while recording the tunneling current. After the

• , oligomers are obtained by CH3–Si bond activation at 130 °C and subsequent tether removal at 200 °C to form an intermolecular silylene tether (–Me2Si–). The sample was further heated at 200 °C to accelerate silylene tether desorption and complete the desilylation Sonogashira coupling. As a result, the

• obtained with pyrene precursors, the C4Si2 rings were converted to C4Si pentagonal siloles by further heat treatment. These results demonstrate that coupling nanoarchitectonics on C–Si surfaces is possible by depositing Si atoms and, subsequently, polycyclic hydrocarbons on Au(111). It is expected that

Overview of mechanism and consequences of endothelial leakiness caused by metal and polymeric nanoparticles

• Magdalena Lasak and
• Karol Ciepluch

Beilstein J. Nanotechnol. 2023, 14, 329–338, doi:10.3762/bjnano.14.28

• the transcellular pathway. NanoEL is a mechanism completely independent of receptors and tumor physiology [12][18][19][21][23]. This effect has been observed for various types of NPs including Au [12][21][33][34], Ag [23], Si [20], TiO2 [18][19][23], and SiO2 [23]. Additionally, NanoEL is responsible

• induction depends on the density of NPs, where the effective density of Si NPs ranged from 1.57 to 1.72 g/cm3 [20]. The leakage rate increases with increasing nanoparticle density. They also showed that a force of approximately 1.8 nN/μm along the boundaries of VE-cad adherens junctions mediated by

• unheard of in a tumor-dependent EPR effect. The extracellular NP mechanism of action for NPs including Ag, Au, Si, TiO2, and SiO2 was also confirmed in other studies, which indicated that it is the most likely method of NanoEL induction. Endothelial leakiness induced by nanomaterials is a direct mechanism

Quasi-guided modes resulting from the band folding effect in a photonic crystal slab for enhanced interactions of matters with free-space radiations

• Kaili Sun,
• Yangjian Cai,
• Uriel Levy and
• Zhanghua Han

Beilstein J. Nanotechnol. 2023, 14, 322–328, doi:10.3762/bjnano.14.27

• ) The maximum electric field magnitude normalized to that of the incident wave across the central plane of the Si layer. (d) Typical distributions of Ex and Ey along the central plane of the silicon layer. Funding This work is supported by the National Science Foundation of China (11974221, 12274269).

Biocatalytic synthesis and ordered self-assembly of silica nanoparticles via a silica-binding peptide

• Mustafa Gungormus

Beilstein J. Nanotechnol. 2023, 14, 280–290, doi:10.3762/bjnano.14.25

• stabilizes the favorable orientation of histidine. Then a nucleophilic attack by serine on the Si–O bond of the precursor molecule results in a Ser–O–Si(OR)3 transitory complex. The hydrolysis is completed by the addition of water, separating the protein and the hydrolyzed precursor molecule, and the release

High–low Kelvin probe force spectroscopy for measuring the interface state density

• Ryo Izumi,
• Masato Miyazaki,
• Yan Jun Li and
• Yasuhiro Sugawara

Beilstein J. Nanotechnol. 2023, 14, 175–189, doi:10.3762/bjnano.14.18

• given by Similar results can be obtained for a p-type semiconductor. Next, we consider the charge Qit due to the interface states. In indirect-bandgap semiconductors such as Si with a low carrier density below 1017 cm−3, the charge (electron and hole) transfer between the interface and bulk states at

• density. For an n-type Si semiconductor at room temperature, the hole (minority carrier) lifetime τp as a function of electron (majority carrier) density n has been experimentally investigated and is reported to be less than 2.5 × 10−5 s for low carrier densities n < 5 × 1017 cm−3 [26]. Additionally, for

• metal-oxide semiconductor capacitors on Si(100) substrates, the lifetimes τn and τp as functions of the sum of the surface potential and the Fermi potential with respect to the midgap have been experimentally investigated [24]. As a result, for Si semiconductors with a low carrier density (small Fermi

Structural, optical, and bioimaging characterization of carbon quantum dots solvothermally synthesized from o-phenylenediamine

• Zoran M. Marković,
• Milica D. Budimir,
• Martin Danko,
• Dušan D. Milivojević,
• Pavel Kubat,
• Danica Z. Zmejkoski,
• Vladimir B. Pavlović,
• Marija M. Mojsin,
• Milena J. Stevanović and
• Biljana M. Todorović Marković

Beilstein J. Nanotechnol. 2023, 14, 165–174, doi:10.3762/bjnano.14.17

• AFM images was performed in Gwyddion software [51]. FTIR measurements were conducted using an infrared microscope Nicolet iN10 Thermofisher Scientific operated in the ATR mode. All samples were deposited on Si substrates by drop casting. Spectra were recorded at ambient temperature in the range of 400

Formation of nanoflowers: Au and Ni silicide cores surrounded by SiO_x branches

• Feitao Li,
• Siyao Wan,
• Dong Wang and
• Peter Schaaf

Beilstein J. Nanotechnol. 2023, 14, 133–140, doi:10.3762/bjnano.14.14

• This work reports the formation of nanoflowers after annealing of Au/Ni bilayers deposited on SiO2/Si substrates. The cores of the nanoflowers consist of segregated Ni silicide and Au parts and are surrounded by SiOx branches. The SiO2 decomposition is activated at 1050 °C in a reducing atmosphere, and

• it can be enhanced more by Au compared to Ni. SiO gas from the decomposition of SiO2 and the active oxidation of Si is the source of Si for the growth of the SiOx branches of the nanoflowers. The concentration of SiO gas around the decomposition cavities is inhomogeneously distributed. Closer to the

• cavity border, the concentration of the Si sources is higher, and SiOx branches grow faster. Hence, nanoflowers present shorter and shorter branches as they are getting away from the border. However, such inhomogeneous SiO gas concentration is weakened in the sample with the highest Au concentration due

Liquid phase exfoliation of talc: effect of the medium on flake size and shape

• Samuel M. Sousa,
• Helane L. O. Morais,
• Joyce C. C. Santos,
• Ana Paula M. Barboza,
• Bernardo R. A. Neves,
• Elisângela S. Pinto and
• Mariana C. Prado

Beilstein J. Nanotechnol. 2023, 14, 68–78, doi:10.3762/bjnano.14.8

• measurements were performed on silicon substrates with an oxide layer, Si/SiOx. Substrates were functionalized with (3-aminopropyl)triethoxysilane (APTES) following the procedure reported by Fernandes and co-workers [24]. X-ray diffraction. XRD was performed in a Rigaku Geigerflex 2037 diffractometer with a

• et al. [24] and Santos and co-workers [25]. In short, a solution (1:40) of APTES in DI water was prepared. Si/SiOx substrates were immersed in the solution for 15 min. Subsequently, each substrate was rinsed with DI water and blown dry with pure N2 five times to ensure the removal of any residual

• structure of talc [12]. Pink, red, green, and gray circles represent Si, O, Mg, and H atoms, respectively. (b) Picture of the source mineral before being manually milled. It weighed approximately 1.3 kg. (c) Schematic representation of LPE. Micrometer-sized talc powder is exposed to mechanical energy, which

Upper critical magnetic field in NbRe and NbReN micrometric strips

• Zahra Makhdoumi Kakhaki,
• Antonio Leo,
• Federico Chianese,
• Loredana Parlato,
• Giovanni Piero Pepe,
• Angela Nigro,
• Carla Cirillo and
• Carmine Attanasio

Beilstein J. Nanotechnol. 2023, 14, 45–51, doi:10.3762/bjnano.14.5

• Hc2⟂. We have not observed a positive curvature of Hc2⟂(T) near Tc as it was in the case of two-band superconductivity [44] or proximity-coupled superconducting systems [45][46]. Experimental NbRe and NbReN films were sputtered on oxidized Si substrates in a UHV dc magnetron system with base pressure

The influence of structure and local structural defects on the magnetic properties of cobalt nanofilms

• Alexander Vakhrushev,
• Aleksey Fedotov,
• Olesya Severyukhina and
• Anatolie Sidorenko

Beilstein J. Nanotechnol. 2023, 14, 23–33, doi:10.3762/bjnano.14.3

• , simultaneous equations of classical molecular dynamics are used, which are supplemented by considering the spin vectors si for each atom. The motion equation for atoms and spins is written in the following form: where ri is the vector characterizing the position of the particle i; si,and sj are the spin

• − rij) is the Heaviside function. The coefficients α, δ, and γ must be chosen so that the aforementioned function corresponds to the values of the magnetoelastic constant of the materials under consideration. The following equation is used to calculate the spin temperature: where si is vector

Electrical and optical enhancement of ITO/Mo bilayer thin films via laser annealing

• Abdelbaki Hacini,
• Ahmad Hadi Ali,
• Nurul Nadia Adnan and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2022, 13, 1589–1595, doi:10.3762/bjnano.13.133

• (Quorum Q300T D) at 10−4 mbar pressure. The magnetron sputter contains a double target with high purity (approx. 99.99%). The first target is for sputtering ITO (90 wt % In2O3 and 10 wt % SnO2), and the second target is for sputtering Mo. Before deposition, the Si and the glass samples were cut into

• pieces and cleaned to suit the characterization equipment. The Si substrates were ultrasonically cleaned using acetone, isopropyl alcohol, and distilled water. The glass substrates were cleaned using Decon-90 cleaner. The glass and Si samples were dried with nitrogen gas and treated for 10 min in a

Observation of collective excitation of surface plasmon resonances in large Josephson junction arrays

• Roger Cattaneo,
• Mikhail A. Galin and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2022, 13, 1578–1588, doi:10.3762/bjnano.13.132

• interjunction interaction. Samples We study arrays of Nb/NbxSi1−x/Nb JJs fabricated on oxidized Si substrates and connected in series by Nb electrodes. The NbxSi1−x interlayer with the composition x ≃ 0.14 was deposited by co-sputtering from Nb and Si sources. Details about the fabrication procedure can be

• in the reverse branch of the I–V characteristics for both arrays. As shown in [9][34], they are caused by propagation of surface plasmon-type EMWs along the Nb electrode–Si substrate interface. These steps appear when the Josephson frequency coincides with one of the cavity mode frequencies

Utilizing the surface potential of a solid electrolyte region as the potential reference in Kelvin probe force microscopy

• Nobuyuki Ishida

Beilstein J. Nanotechnol. 2022, 13, 1558–1563, doi:10.3762/bjnano.13.129

• measurement The KPFM measurements were performed at room temperature using a commercial atomic force microscope (Park Systems, NX10) placed in an Ar flow glove box (O2: <1 ppm, H2O: <1 ppm). We used Cr/Pt-coated Si cantilevers (Budget Sensors, Multi75E-G) with a nominal resonance frequency of 75 kHz and a

Induced electric conductivity in organic polymers

• Konstantin Y. Arutyunov,
• Anatoli S. Gurski,
• Vladimir V. Artemov,
• Alexander L. Vasiliev,
• Azat R. Yusupov,
• Danfis D. Karamov and
• Alexei N. Lachinov

Beilstein J. Nanotechnol. 2022, 13, 1551–1557, doi:10.3762/bjnano.13.128

• of the PDP polymer solutions. For example, Figure 2b shows the topography of the polymer film 0.1 wt % on Si substrate. The plot at the bottom demonstrates the variation of the structure along the line, depicted at the upper panel. The distance between the measuring lines is of the order of the

• strip and the whole sandwich itself. (b) Atomic force microscope scan of a PDP film 0.1 wt % on Si substrate. The plot at the bottom illustrates the roughness of the surface along the indicated line. (c) Side view of a Pb–PDP–Pb structure on glass with solitary defect (lead shortcut) obtained by

A TiO₂@MWCNTs nanocomposite photoanode for solar-driven water splitting

• Anh Quynh Huu Le,
• Ngoc Nhu Thi Nguyen,
• Hai Duy Tran,
• Van-Huy Nguyen and
• Le-Hai Tran

Beilstein J. Nanotechnol. 2022, 13, 1520–1530, doi:10.3762/bjnano.13.125

• the photoelectrochemical activity in aqueous environment [18][19][20]. Figure 4 shows the EDX spectra of MWCNTs and the TiO2@MWCNTs nanocomposite. The EDX spectrum for TiO2@MWCNTs confirms the presence of Ti, which accounts for 28.76 wt %. Small amounts of Fe, Al, and Si exists in as-synthesized

Hydroxyapatite–bioglass nanocomposites: Structural, mechanical, and biological aspects

• Olga Shikimaka,
• Mihaela Bivol,
• Bogdan A. Sava,
• Marius Dumitru,
• Christu Tardei,
• Beatrice G. Sbarcea,
• Daria Grabco,
• Constantin Pyrtsac,
• Daria Topal,
• Andrian Prisacaru,
• Vitalie Cobzac and
• Viorel Nacu

Beilstein J. Nanotechnol. 2022, 13, 1490–1504, doi:10.3762/bjnano.13.123

• , Romania Nicolae Testemitanu State University of Medicine and Pharmacy, 165 Stefan cel Mare si Sfant ave., MD-2004, Chisinau, Republic of Moldova 10.3762/bjnano.13.123 Abstract This research work focuses on the fabrication and study of a series of nanocomposites consisting of two types of hydroxyapatite

Coherent amplification of radiation from two phase-locked Josephson junction arrays

• Mikhail A. Galin,
• Vladimir M. Krasnov,
• Ilya A. Shereshevsky,
• Nadezhda K. Vdovicheva and
• Vladislav V. Kurin

Beilstein J. Nanotechnol. 2022, 13, 1445–1457, doi:10.3762/bjnano.13.119

• a superconductive to a resistive state observed in all IVCs is typical for niobium junctions with medium doping Si interlayer 11% [18]. Resonant steps at similar voltages are observed for both pairs of arrays. As shown earlier [9][13], they are caused by standing wave (cavity mode) resonances in the

Near-infrared photoactive Ag-Zn-Ga-S-Se quantum dots for high-performance quantum dot-sensitized solar cells

• Roopakala Kottayi,
• Ilangovan Veerappan and
• Ramadasse Sittaramane

Beilstein J. Nanotechnol. 2022, 13, 1337–1344, doi:10.3762/bjnano.13.110

• measured by using an AM 1.5 solar simulator (Oriel instruments 67005) of 100 mW·cm−2 power density. This power density was calibrated with the photocurrent of the reference cell (crystal Si capped by an IR cut filter). Fill factor (FF) and photoconversion efficiency (η) were calculated by using the

Enhanced electronic transport properties of Te roll-like nanostructures

• E. R. Viana,
• N. Cifuentes and
• J. C. González

Beilstein J. Nanotechnol. 2022, 13, 1284–1291, doi:10.3762/bjnano.13.106

• writing optical lithography on 1 × 1 cm2 degenerate Si(100) substrates covered by a 300 nm thick high-quality SiO2 layer. A Cr(10 nm)/Au(100 nm) bilayer was thermally evaporated on the sample to produce good ohmic contacts (see Supporting Information File 1). This procedure follows the methodology

• -nanobelt back-gated FET devices on SiO2/Si substrates. These nanostructures exhibit p-type conductivity with superior room temperature field-effect hole mobility compared to bulk and nanostructures of Te previously synthesized by other methods. The analysis of the temperature dependence of the electrical