Curcumin-loaded nanostructured systems for treatment of leishmaniasis: a review

• Douglas Dourado,
• Thayse Silva Medeiros,
• Éverton do Nascimento Alencar,
• Edijane Matos Sales and
• Fábio Rocha Formiga

Beilstein J. Nanotechnol. 2024, 15, 37–50, doi:10.3762/bjnano.15.4

• IC50 values of 0.15 ± 0.08, 0.09 ± 0.07, and 0.07 ± 0.04 μM and selectivity index (SI) of 80, 255, and 314, respectively. In addition to the influence of the nanostructure, sugar promotes greater internalization of these nanoparticles due to the mannose receptors on the surface of macrophages [111

Measurements of dichroic bow-tie antenna arrays with integrated cold-electron bolometers using YBCO oscillators

• Leonid S. Revin,
• Dmitry A. Pimanov,
• Alexander V. Chiginev,
• Anton V. Blagodatkin,
• Viktor O. Zbrozhek,
• Andrey V. Samartsev,
• Anastasia N. Orlova,
• Dmitry V. Masterov,
• Alexey E. Parafin,
• Victoria Yu. Safonova,
• Anna V. Gordeeva,
• Andrey L. Pankratov,
• Leonid S. Kuzmin,
• Anatolie S. Sidorenko,
• Silvia Masi and
• Paolo de Bernardis

Beilstein J. Nanotechnol. 2024, 15, 26–36, doi:10.3762/bjnano.15.3

• of the antenna array is 340 µm in both directions for 210 and 240 GHz channels. The frequency response of the two-frequency receiving matrix with a Si substrate thickness of 260 µm is shown in Figure 2 (solid curves). To compare the calculated response with the experimental results, we also added

• curves for a Si substrate thickness of 290 µm (dashed curves). As a result of frequency response optimizations, the following characteristics were obtained: The bandwidth for the 210 GHz channel at half power level is 25.46 GHz, and the maximum absorption occurs at a frequency of 212.1 GHz; the bandwidth

• –frequency characteristics of resonant bolometers was set up as follows: The generator chip with JJs was mounted on the sample holder with a 4 mm Si hyperhemispherical lens thermally coupled with a 2.7 K cryostat plate. The control magnetic field required to create a flux-flow regime in a long Josephson

TEM sample preparation of lithographically patterned permalloy nanostructures on silicon nitride membranes

• Joshua Williams,
• Michael I. Faley,
• Joseph Vimal Vas,
• Peng-Han Lu and
• Rafal E. Dunin-Borkowski

Beilstein J. Nanotechnol. 2024, 15, 1–12, doi:10.3762/bjnano.15.1

• , we initially fabricated the nanostructures on a 200 µm thick Si substrate with 100 nm thick SiN buffer layers on both sides. The buffer layers were deposited with low-pressure CVD to ensure stress-free films. The fabrication process is shown in Figure 10. First, we made the nanostructure using lift

• KOH solution resulted in a faster etch rate but led to much stronger bubbling and roughening of the Si surface with the creation of micropyramidal hillocks [31]. The surface alignment of the Si substrates is parallel to the {100} crystallographic plane of Si, and the anisotropic KOH etching results in

• a 54.7° slope with respect to the etched surface on the sidewalls. Because of the (010) edge orientation of Si substrates, etching occurs faster in diagonal directions of the substrates, resulting in sharp edges on the structure (Figure 11b). Magnetic measurements Setup All TEM magnetic measurements

Determination of the radii of coated and uncoated silicon AFM sharp tips using a height calibration standard grating and a nonlinear regression function

• Perawat Boonpuek and
• Jonathan R. Felts

Beilstein J. Nanotechnol. 2023, 14, 1200–1207, doi:10.3762/bjnano.14.99

• -coated, Cr/Au-coated, and uncoated Si tips were used to scan a calibration standard grating in AFM contact mode with sub-nanonewton load to obtain the curved scan profile of the edge corner of the grating structure. The data points of the curved profile of each tip were fitted with a nonlinear regression

• function to estimate the curvature radius of the tip. The results show that the estimated radius of the coated tips is in the range of nominal values provided by the tip manufacturer, while the estimated radius of the uncoated Si tip is bigger than the nominal radius because of tip blunting during the scan

• in situ determinations of the tip characterizer shape revealed that the radius of curvature of the Si corner edge of the standard grating is sharper (usually <2 nm [16]) than the tip end. Although we do not know the exact value of the edge radius of the height grate from its specification sheet for

A combined gas-phase dissociative ionization, dissociative electron attachment and deposition study on the potential FEBID precursor [Au(CH₃)₂Cl]₂

• Elif Bilgilisoy,
• Ali Kamali,
• Thomas Xaver Gentner,
• Gerd Ballmann,
• Sjoerd Harder,
• Hans-Peter Steinrück,
• Hubertus Marbach and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2023, 14, 1178–1199, doi:10.3762/bjnano.14.98

• (500 nm)/Si(111) In this experiment, 4 × 4 µm2 FEBID structures were written with [Au(CH3)2Cl]2 as the precursor using an acceleration voltage of 5 keV and a beam current of 1.5 nA. The fabricated structures were examined with scanning electron microscopy (SEM) and Auger electron spectroscopy (AES

• (500 nm)/Si(111) substrate (black spectrum), only two main AES signals are visible: The peak at 272 eV is attributed to CKLL Auger transitions of carbon [34], and the peaks at 468, 483, and 503 eV to OKLL Auger transitions of SiO2 [34]. After deposition, AES signals at 69, 181, 272, and 430 eV are

• ]. The image after the background subtraction is shown in Figure 1d, where the particles can be more clearly distinguished. After background subtraction, some of the deposited nanoparticles appear facetted; however, the majority are spherical. HAADF-STEM on FEBID (SiO2 (500 nm)/Si(111)) As a next step

Spatial variations of conductivity of self-assembled monolayers of dodecanethiol on Au/mica and Au/Si substrates

• Julian Skolaut,
• Jędrzej Tepper,
• Federica Galli,
• Wulf Wulfhekel and
• Jan M. van Ruitenbeek

Beilstein J. Nanotechnol. 2023, 14, 1169–1177, doi:10.3762/bjnano.14.97

• /Si; conductive atomic force microscopy; dodecanethiol; self-assembled monolayers; Introduction For decades, the need for miniaturization of electronics has pushed the research field into the direction of bottom-up, rather than top-down, approaches. In this research field, molecular electronics [1][2

• substrates consisting of thin Au layers of different surface roughness. We compare granular Au films deposited on Si wafers with epitaxial (flat) Au films on mica. Experimental Before the experimental results are presented, this section focuses on the preparation of the samples under study and the setup used

• to carry out the measurements. As mentioned above, two types of Au substrates were used, that is, Au-coated Si (Au/Si) and epitaxially grown Au on mica (Au/mica), bought from Sigma-Aldrich and Phasis, respectively. The Au thicknesses are 200 nm for Au/mica and 100 nm for Au/Si substrates. The Au/mica

Hierarchically patterned polyurethane microgrooves featuring nanopillars or nanoholes for neurite elongation and alignment

• Lester Uy Vinzons,
• Guo-Chung Dong and
• Shu-Ping Lin

Beilstein J. Nanotechnol. 2023, 14, 1157–1168, doi:10.3762/bjnano.14.96

• ], poly(lactic-co-glycolic acid) nanodots enhanced the proliferation and neurite sprouting of Neuro-2a cells [7], and oriented elliptical Si microcones induced alignment and increased fasciculation in rat superior cervical ganglion axons [8]. With their effects complementing those of continuous structures

A multi-resistance wide-range calibration sample for conductive probe atomic force microscopy measurements

• François Piquemal,
• Khaled Kaja,
• Pascal Chrétien,
• José Morán-Meza,
• Frédéric Houzé,
• Christian Ulysse and
• Abdelmounaim Harouri

Beilstein J. Nanotechnol. 2023, 14, 1141–1148, doi:10.3762/bjnano.14.94

• measurements on gold pads, this observation was systematically made for the I–V curves measured on all gold electrode arms. Through further investigations, we were able to associate this observation with the use of worn AFM diamond tips, especially formed by a p-type diamond coating on a highly doped n-type Si

Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone

• Kristjan Kalam,
• Peeter Ritslaid,
• Tanel Käämbre,
• Aile Tamm and
• Kaupo Kukli

Beilstein J. Nanotechnol. 2023, 14, 1085–1092, doi:10.3762/bjnano.14.89

• Kristjan Kalam Peeter Ritslaid Tanel Kaambre Aile Tamm Kaupo Kukli Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia 10.3762/bjnano.14.89 Abstract Polycrystalline SnO2 thin films were grown by atomic layer deposition (ALD) on SiO2/Si(100) substrates from SnI4 and O3

• , the cycle times for SnO2 were kept at 5-2-5-5 s, respectively, for the following sequence: metal precursor pulse, N2 purge pulse, O3 pulse, and N2 purge pulse. The films were grown on Si(100) cleansed and etched prior to the growth. An X-ray fluorescence spectrometer Rigaku ZSX 400 with the program

Spatial mapping of photovoltage and light-induced displacement of on-chip coupled piezo/photodiodes by Kelvin probe force microscopy under modulated illumination

• Zeinab Eftekhari,
• Nasim Rezaei,
• Hidde Stokkel,
• Jian-Yao Zheng,
• Andrea Cerreta,
• Ilka Hermes,
• Minh Nguyen,
• Guus Rijnders and
• Rebecca Saive

Beilstein J. Nanotechnol. 2023, 14, 1059–1067, doi:10.3762/bjnano.14.87

• from the top reached the Si p–n junction and generated electron–hole pairs, building a potential difference across the junction. The generated photovoltage was applied to the piezoelectric capacitor through the photolithographically defined contacts and induced mechanical displacement in the

• the Si photodiode and lead to a nonzero baseline. However, it does not affect the photovoltage as the peak-to-peak potential was calculated. Comparative measurements over a micrometric area of the sample were performed (see Supporting Information File 1). The CPD of a 1 μm2 area at the center of the

• membrane with a maximum of 946 pm, while decreasing to a few picometers at the side edges. The decay of displacement from the center to the edge is expected from the clamping effect at the edges, where the Si substrate is thicker [38]. The measured CPD shift in Figure 3b indicates that the photovoltage

Nanoarchitectonics of photothermal materials to enhance the sensitivity of lateral flow assays

• Elangovan Sarathkumar,
• Rajasekharan S. Anjana and
• Ramapurath S. Jayasree

Beilstein J. Nanotechnol. 2023, 14, 988–1003, doi:10.3762/bjnano.14.82

• materials with other functional materials have been found to be useful. Covalent organic frameworks (COFs) are a new class of organic polymers containing B, C, Si, N, and O in their backbones. Conjugation of COFs with Fe3O4 nanoparticles will yield a two to three times higher PCE than that of bare Fe3O4

Isolation of cubic Si₃P₄ in the form of nanocrystals

• Polina K. Nikiforova,
• Sergei S. Bubenov,
• Vadim B. Platonov,
• Andrey S. Kumskov,
• Nikolay N. Kononov,
• Tatyana A. Kuznetsova and
• Sergey G. Dorofeev

Beilstein J. Nanotechnol. 2023, 14, 971–979, doi:10.3762/bjnano.14.80

• engineering communities [1]. Materials based on compounds of Earth-abundant elements are extensively sought for. With regard to the Si–P system, novel compounds are still discovered, and research on nanoscale forms of silicon phosphides is ongoing. For instance, nanocrystalline cubic SiP was formed as

• inclusions in Si wafers implanted with P+ ions and laser-annealed at temperatures of 450–850 °C [2]. Recently, NPs of elemental compositions close to SiP and SiP2 have been observed in thermal annealing products of non-stoichiometric silicon oxide containing high amounts of phosphorus introduced during the

• fabrication; the resulting composition seems to arise from Si and P supersaturation levels [3][4]. The formation of precipitates in supersaturated silicon has also been considered as a possible mechanism involved in the deactivation of dopants [5][6][7]. To date, Si3P4 compounds have not been experimentally

Metal-organic framework-based nanomaterials for CO₂ storage: A review

• Ha Huu Do,
• Iqra Rabani and
• Hai Bang Truong

Beilstein J. Nanotechnol. 2023, 14, 964–970, doi:10.3762/bjnano.14.79

• groups in facilitating CO2 adsorption has been further demonstrated by Si and coworkers [28]. The authors used 2-amino-1,4-benzenedicarboxylate to fabricate an amine-containing MOF, which exhibited a high CO2 adsorption capacity of 7.2 mmol·g−1. Moreover, MOFs constructed by N-containing aromatic ring

Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

• Mathias Franz,
• Mahnaz Safian Jouzdani,
• Lysann Kaßner,
• Marcus Daniel,
• Frank Stahr and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2023, 14, 951–963, doi:10.3762/bjnano.14.78

• precursor structure is shown in Figure 2. This precursor was selected because of the following considerations: Georgi et al. provided a set of nine similar complexes with different alkynes and reported their film compositions after CVD experiments. We selected a liquid precursor without Si contaminations

Upscaling the urea method synthesis of CoAl layered double hydroxides

• Camilo Jaramillo-Hernández,
• Víctor Oestreicher,
• Martín Mizrahi and
• Gonzalo Abellán

Beilstein J. Nanotechnol. 2023, 14, 927–938, doi:10.3762/bjnano.14.76

• prepared by paint spraying on carbon paper. The optimum amount of material for the measurements was calculated by the program “Hephaestus”, which is part of the Demeter package [77]. A Si(111) double-crystal monochromator was used to obtain a monochromatic incident beam, and the intensities of incident and

• spin-coated on a Si wafer (3000 rpm, 40 s), washed with ethanol and dried afterward. For AFM, the samples were diluted in ethanol and drop-cast on a Si/SiO2 wafer. Si/SiO2 wafers were washed by spin-coating ten droplets of acetone and ten droplets of isopropanol prior to sample deposition. Scanning

Green SPIONs as a novel highly selective treatment for leishmaniasis: an in vitro study against Leishmania amazonensis intracellular amastigotes

• Brunno R. F. Verçoza,
• Robson R. Bernardo,
• Luiz Augusto S. de Oliveira and
• Juliany C. F. Rodrigues

Beilstein J. Nanotechnol. 2023, 14, 893–903, doi:10.3762/bjnano.14.73

• software to estimate them. CC50 values are essential to calculate the selective index (SI), and both quantities are important to understand how effective the nanoparticles are against the parasite while being less toxic for mammalian cells (Table 1). The SI revealed that the SPIONs were highly selective

• ) destroyed amastigotes (D, triangle). F, flagellum; k, kinetoplast; LB, lipid body; M, mitochondrion; and N, nucleus. Estimated CC50 and SI obtained after the analysis of the macrophage cytotoxicity assay previously published in [9] using the GraphPad Prism software. Selectivity index values for different

Ultralow-energy amorphization of contaminated silicon samples investigated by molecular dynamics

• Grégoire R. N. Defoort-Levkov,
• Alan Bahm and
• Patrick Philipp

Beilstein J. Nanotechnol. 2023, 14, 834–849, doi:10.3762/bjnano.14.68

• some of the Si atoms get displaced, modifying the local order by broadening the peaks, while the crystalline structure is maintained in other places, keeping a long-range order above 4 Å with the presence of distinct peaks. The graphs in Figure 4b and Figure 4e represent this transition region and are

• peak intensities related to water species (i.e., from Si–O and Si–H interactions) are strongly reduced, which indicates a significant removal of the contaminant. This translates to an overall increased sputtering yield as will be discussed in a later section. To further confirm the hypothesis that

Silver-based SERS substrates fabricated using a 3D printed microfluidic device

• Phommachith Sonexai,
• Minh Van Nguyen,
• Bui The Huy and
• Yong-Ill Lee

Beilstein J. Nanotechnol. 2023, 14, 793–803, doi:10.3762/bjnano.14.65

• centrifuged at 12,000 rpm for 5 min to separate the Ag NPs solution and remove the oil phase. Finally, the Ag NPs suspension was stored in a dark vial at room temperature for further experiments. Fabrication of porous silicon (PS) substrate A p-type Si(100) wafer with a resistivity of 0.01–0.09 Ω·cm was used

• is more cost-effective, straightforward, and accessible. The chemical treatment of PDMS and the glass plate aims to decorate their surfaces with silanol groups (Si–OH), enabling the two surfaces to bond chemically at the atomic level [49]. To determine the droplet size, we used two dye solutions and

In situ magnesiothermic reduction synthesis of a Ge@C composite for high-performance lithium-ion batterie anodes

• Ha Tran Huu,
• Ngoc Phi Nguyen,
• Vuong Hoang Ngo,
• Huy Hoang Luc,
• Minh Kha Le,
• Minh Thu Nguyen,
• My Loan Phung Le,
• Hye Rim Kim,
• In Young Kim,
• Sung Jin Kim,
• Van Man Tran and
• Vien Vo

Beilstein J. Nanotechnol. 2023, 14, 751–761, doi:10.3762/bjnano.14.62

• than Si at room temperature) conductivity [14]. However, electrodes based on alloying suffer from deterioration during repeated lithiation/delithiation because of the large variation in volume. Despite the lower volume change ratio compared to Si (370% for Ge and 400% for Si) and the structural

• robustness, for example, a higher resistance to pulverization than Si, the durability of Ge-based anode is not sufficient for practical applications [14]. To overcome this limitation, nanoscale control and composite design are two effective strategies [15][16][17][18][19]. In addition to various Ge

Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectives

• Mattia da Lisca,
• José Alvarez,
• James P. Connolly,
• Nicolas Vaissiere,
• Karim Mekhazni,
• Jean Decobert and
• Jean-Paul Kleider

Beilstein J. Nanotechnol. 2023, 14, 725–737, doi:10.3762/bjnano.14.59

• crosstalk [17]. The laser beam deflection system in our AFM employs a laser wavelength of 1310 nm, which is well below the bandgap of our sample; therefore, the parasitic laser absorption, which may interfere with the KPFM measurement, is reduced to negligible levels [13]. Highly doped n+-Si ARROW EFM tips

Humidity-dependent electrical performance of CuO nanowire networks studied by electrochemical impedance spectroscopy

• Jelena Kosmaca,
• Juris Katkevics,
• Jana Andzane,
• Raitis Sondors,
• Liga Jasulaneca,
• Raimonds Meija,
• Kiryl Niherysh,
• Yelyzaveta Rublova and
• Donats Erts

Beilstein J. Nanotechnol. 2023, 14, 683–691, doi:10.3762/bjnano.14.54

• of nanostructured CuO, and indicate directions for further applications in humidity sensors and other systems with nanowire interconnects. Results and Discussion The synthesized CuO nanowires (Figure 1a) were assembled between arrays of lithographically defined Au microelectrodes on a Si/SiO2 chip

• naturally. The substrates were submerged in pure isopropanol (IPA) and ultrasonicated for 3 s to release the CuO nanowires. These nanowires were assembled on arrays of Cr/Au (3/60 nm) microelectrodes lithographically pre-patterned on a commercially available Si/SiO2 wafer substrate (MTI Corporation) diced

Transferability of interatomic potentials for silicene

• Marcin Maździarz

Beilstein J. Nanotechnol. 2023, 14, 574–585, doi:10.3762/bjnano.14.48

• -principles method and then to test the ability of different interatomic potentials to reproduce these properties. Methods Analyzing the available literature concerning all phases of single-layer Si, it is not feasible to find all structural, mechanical, and phonon data obtained in one consistent way. The

• ] as an exchange–correlation functional, and optimized norm-conserving Vanderbilt pseudopotential [22] (ONCVPP) are similar. Cut-off energy and electron configuration of Si were used in the DFT calculations according to the pseudopotential and Gaussian smearing scheme with tsmear (Ha) = 0.02. To

• embedded-atom method (MEAM) potential for Si fitted to silicon interstitials SW1985 [38]: the Stillinger–Weber (SW) potential fitted to solid and liquid forms of Si SW2014 [39]: the Stillinger–Weber (SW) potential fitted to phonon dispersion curves of a single-layer Si sheet EDIP [40]: the environment

ZnO-decorated SiC@C hybrids with strong electromagnetic absorption

• Liqun Duan,
• Zhiqian Yang,
• Yilu Xia,
• Xiaoqing Dai,
• Jian’an Wu and
• Minqian Sun

Beilstein J. Nanotechnol. 2023, 14, 565–573, doi:10.3762/bjnano.14.47

• of Si atoms from SiCnw in the carbonization atmosphere containing a low concentration of chlorine gas [24]. Figure 2 shows TEM and HRTEM images of the final SiC@C-ZnO samples. The SCZ samples are composed of SiC, carbon, and ZnO particles. Obviously, the hybrids are characterized by SiC cores and

• elements (C, Si, O, and Zn) have been determined by XPS in all SCZ samples, as shown in Figure 3. The survey scans of the SCZ samples exhibit major peaks assigned to C 1s (ca. 284 eV), O 1s (ca. 532 eV), Si 2p (ca. 100 eV), Zn 2p (ca. 1022 eV and ca. 1045 eV). The two Zn 2p peaks correspond to Zn 2p3/2 and

• results. In contrast, the relative intensities of the Si 2p and C 1s peaks gradually decrease at the same time. The peaks at 100 and 103.5 eV are related to Si 2p1/2 and Si 2p3/2, respectively. Table 1 provides the elemental compositions (atom %) on the SCZ sample surfaces as determined by XPS. The

SERS performance of GaN/Ag substrates fabricated by Ag coating of GaN platforms

• Magdalena A. Zając,
• Bogusław Budner,
• Malwina Liszewska,
• Bartosz Bartosewicz,
• Łukasz Gutowski,
• Jan L. Weyher and
• Bartłomiej J. Jankiewicz

Beilstein J. Nanotechnol. 2023, 14, 552–564, doi:10.3762/bjnano.14.46

• substrates fabricated using both methods, we attempted to prepare substrates with a comparable amount of deposited Ag, which was examined and controlled using atomic force microscopy (AFM). For this purpose, additional Ag layers were deposited on flat Si substrates. Based on the measured thickness of the Ag

• approximately 423 ± 5 nm thickness on a flat Si surface. In our studies, plasmonic metal was additionally deposited using one shorter and two longer deposition times to obtain GaN/Ag substrates with thinner and thicker Ag layers. As a result, GaN/Ag substrates were prepared with Ag layers deposited for 140, 280

• , 420, and 560 s, that is, with Ag layer thicknesses of 212 ± 2, 423 ± 5, 627 ± 4, and 833 ± 4 nm, respectively. The above thickness values were directly measured on a flat Si platform coated in the same processes as the GaN platforms. However, due to the different surface morphology of GaN platforms

On the use of Raman spectroscopy to characterize mass-produced graphene nanoplatelets

• Keith R. Paton,
• Konstantinos Despotelis,
• Naresh Kumar,
• Piers Turner and
• Andrew J. Pollard

Beilstein J. Nanotechnol. 2023, 14, 509–521, doi:10.3762/bjnano.14.42

• extinction at 660 nm and using an extinction coefficient of 4237 mL·mg−1·m−1 [28] yielded a concentration of 0.028 mg·mL−1. To characterize the thickness of the particles in GNPref, the dispersion was drop-cast on to a cleaned Si/SiO2 (300 nm thick oxide layer) wafer. Before deposition, the dispersion was

• diluted by a factor of 10 in fresh NMP. 10 μL of the diluted dispersion was then drop-cast on a Si/SiO2 wafer at a temperature of 200 °C. To remove residual NMP, the sample was dried overnight in a vacuum oven at 60 °C. AFM measurements of the deposited flakes were carried out using Cypher AFM (Asylum

• Research, Oxford Instruments, UK). AFM images were recorded using Si AFM probes (MikroMasch HQ:NSC15, 40 N/m, 325 kHz, MikroMasch, Bulgaria) in tapping-mode feedback. AFM images were measured in square areas between 6 μm × 6 μm and 8 μm × 8 μm using 1024 × 1024 pixels with a scan speed below 20 μm·s−1. To