Magnetism and magnetoresistance of single Ni–Cu alloy nanowires

• Andreea Costas,
• Camelia Florica,
• Elena Matei,
• Maria Eugenia Toimil-Molares,
• Ionel Stavarache,
• Andrei Kuncser,
• Victor Kuncser and
• Ionut Enculescu

Beilstein J. Nanotechnol. 2018, 9, 2345–2355, doi:10.3762/bjnano.9.219

• obtained from single nanowire measurements is shown in the upper inset. (a) Ni–Cu alloy nanowires placed on SiO2/Si substrates between the interdigitated metallic electrodes obtained by photolithography; (b) alignment of the SiO2/Si substrate with the sample holder of the microscope; (c) the sample covered

Optimization of the optical coupling in nanowire-based integrated photonic platforms by FDTD simulation

• Nan Guan,
• Andrey Babichev,
• Martin Foldyna,
• Dmitry Denisov,
• François H. Julien and
• Maria Tchernycheva

Beilstein J. Nanotechnol. 2018, 9, 2248–2254, doi:10.3762/bjnano.9.209

• a diameter of 1 µm. It is positioned on a SiO2 layer on top of a Si substrate. The thickness of the SiO2 layer is varied to find the minimum thickness necessary to avoid light coupling from the platform components to the absorbing Si substrate. Following the experimental realization of [30], an

• etching after the metallic contact deposition without any damage of the device, and the SiNx waveguide can be fabricated after this etching step. Taking into account that the Si substrate is strongly absorbing at 400 nm, a simulation with different thicknesses of the SiO2 layer was done to evaluate the

• impact of the SiO2 spacer thickness on the losses due to the light coupling and absorption in Si. The results demonstrate that for a SiO2 thickness larger than 300 nm, the absorption of the Si substrate becomes negligible due to total internal reflection at the GaN/SiO2 interface and the transmission of

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

• Noel Kennedy,
• Ray Duffy,
• Luke Eaton,
• Dan O’Connell,
• Scott Monaghan,
• Shane Garvey,
• James Connolly,
• Chris Hatem,
• Justin D. Holmes and
• Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

• the Si substrate. MLD-doped 66 nm SOI was further examined using secondary ion mass spectrometry (SIMS) to attain a more detailed view of total dopant distribution in the substrate, which is complementary to previous measurements of active carrier concentrations through ECV. Data shown in Figure 7

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si_1−xGe_x and Si layers

• Richard Daubriac,
• Emmanuel Scheid,
• Hiba Rizk,
• Richard Monflier,
• Sylvain Joblot,
• Rémi Beneyton,
• Pablo Acosta Alba,
• Sébastien Kerdilès and
• Filadelfo Cristiano

Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

• etching time of a 20 nm thick Si0.73Ge0.27 boron-doped layer (1018 cm−3) grown on top of a Si substrate. TEM images show a clear decrease of the layer thickness, while all the techniques are in mutual agreement, therefore validating ellipsometry as a unique thickness characterization method for the

• on top of a Si substrate. We first describe the Van der Pauw structure and the conventional Hall effect setup. Then we will present the differential Hall effect measurements and calculations and we will discuss the limitations of the technique. Van der Pauw structure and Hall effect measurements on

Synthesis of hafnium nanoparticles and hafnium nanoparticle films by gas condensation and energetic deposition

• Irini Michelakaki,
• Nikos Boukos,
• Dimitrios A. Dragatogiannis,
• Spyros Stathopoulos,
• Costas A. Charitidis and
• Dimitris Tsoukalas

Beilstein J. Nanotechnol. 2018, 9, 1868–1880, doi:10.3762/bjnano.9.179

• , several scenarios, such as derformation, fragmentation and implantation of the NPs, are possible [40][43]. In this study we observed partial and complete deformation of the NPs. 3D NTF patterning In order to fabricate 3D NTF patterns, a spin-coated PMMA film on a Si substrate was initially patterned via e

• composed of orthorhombic HfO2 nanocrystallites indicated by arrows exhibiting lattice fringes of d = 0.295 nm corresponding to (101) HfO2 embedded in an amorphous layer. X-ray pattern of hafnium NPs on Si substrate synthesized for different aggregation-zone lengths D = 50, 75 and 100 nm. a) Bright-field

Toward the use of CVD-grown MoS₂ nanosheets as field-emission source

• Geetanjali Deokar,
• Nitul S. Rajput,
• Junjie Li,
• Francis Leonard Deepak,
• Wei Ou-Yang,
• Nicolas Reckinger,
• Carla Bittencourt,
• Jean-Francois Colomer and
• Mustapha Jouiad

Beilstein J. Nanotechnol. 2018, 9, 1686–1694, doi:10.3762/bjnano.9.160

• . Additionally, the FFT pattern as shown in Figure 4e for the yellow squared area in Figure 4d, confirms well-crystallized MoS2 NSs with the c-axis being normal to the NSs. Between, the vertically aligned MoS2 NSs and the SiO2/Si substrate, a layer (marked with “B” in Figure 4a) containing Mo, S and O (37–55 nm

Optical near-field mapping of plasmonic nanostructures prepared by nanosphere lithography

• Gitanjali Kolhatkar,
• Alexandre Merlen,
• Jiawei Zhang,
• Chahinez Dab,
• Gregory Q. Wallace,
• François Lagugné-Labarthet and
• Andreas Ruediger

Beilstein J. Nanotechnol. 2018, 9, 1536–1543, doi:10.3762/bjnano.9.144

• (gold or silver) nanotriangles deposited on a glass or Si substrate, are of high interest to study plasmonics, and more specifically localised surface plasmon resonance (LSPR) [23][24]. Indeed, their geometry and their metallic nature result in the spatial confinement of the electric field at their

Magnetic characterization of cobalt nanowires and square nanorings fabricated by focused electron beam induced deposition

• Federico Venturi,
• Gian Carlo Gazzadi,
• Amir H. Tavabi,
• Alberto Rota,
• Rafal E. Dunin-Borkowski and
• Stefano Frabboni

Beilstein J. Nanotechnol. 2018, 9, 1040–1049, doi:10.3762/bjnano.9.97

• secondary electron generation by the primary beam interacting with the Si substrate, which is thicker and denser than the C substrate. Energy-dispersive X-ray spectroscopy (EDX) provided measured compositions that depended on the substrate and deposition energy. A spectrum recorded from the bare substrate

• state is higher than that applied during horseshoe state observation. In order to validate the L-TEM results obtained at remanence and to measure the three-dimensional (3D) topography of the sample, additional analyses were carried out using AFM and MFM. A square nanoring was deposited at 5 keV on a Si

• substrate for MFM analysis. An AFM topography image is shown in Figure 4a, while a height profile taken across the middle of the nanoring is shown in Figure 4b. Both sides have a thickness of ca. 40 nm, a length of 1 μm and a width of ca. 100 nm. A topographic map of the same area is shown in Figure 4c. In

Comparative study of sculptured metallic thin films deposited by oblique angle deposition at different temperatures

• Susann Liedtke,
• Christoph Grüner,
• Jürgen W. Gerlach and
• Bernd Rauschenbach

Beilstein J. Nanotechnol. 2018, 9, 954–962, doi:10.3762/bjnano.9.89

• measured with respect to the substrate normal (see (e) and (g)). Intensity (a.u.) is depicted on a linear scale (see scale bar) and applies for all measured in-plane pole figures ((e)–(h)). Schematic illustration of a tilted Al column deposited on a thermally oxidized Si substrate at an oblique angle θ

Effect of annealing treatments on CeO₂ grown on TiN and Si substrates by atomic layer deposition

• Silvia Vangelista,
• Rossella Piagge,
• Satu Ek and
• Alessio Lamperti

Beilstein J. Nanotechnol. 2018, 9, 890–899, doi:10.3762/bjnano.9.83

• the signal connected with OH− content progressively decreases (not shown). This demonstrates that ceria film deposited on SiO2/Si substrate can sustain annealing at high temperatures up to 900 °C without major concerns regarding the onset of interdiffusion and interface stability. The cross-sectional

• annealing induces severe oxidation on TiN with a broadening of the interface with CeO2 and potential local mixing, which limit its integration in a technological process. On the contrary, the high stability of the Si substrate (apart from its oxidation at the interface) allows to increase the annealing

Tuning adhesion forces between functionalized gold colloidal nanoparticles and silicon AFM tips: role of ligands and capillary forces

• Sven Oras,
• Sergei Vlassov,
• Marta Berholts,
• Rünno Lõhmus and
• Karine Mougin

Beilstein J. Nanotechnol. 2018, 9, 660–670, doi:10.3762/bjnano.9.61

• in a PeakForce QNM Mode. Figure 2 displays AFM images of Au NPs topography and adhesion along with typical force–distance curves for Au NPs and Si substrate. Results show that adhesion force values are highly modulated by the nature of the tail group of the NPs thin coating as well as the NPs

Green synthesis of fluorescent carbon dots from spices for in vitro imaging and tumour cell growth inhibition

• Nagamalai Vasimalai,
• Vânia Vilas-Boas,
• Juan Gallo,
• María de Fátima Cerqueira,
• Mario Menéndez-Miranda,
• José Manuel Costa-Fernández,
• Lorena Diéguez,
• Begoña Espiña and
• María Teresa Fernández-Argüelles

Beilstein J. Nanotechnol. 2018, 9, 530–544, doi:10.3762/bjnano.9.51

• (PanAnalytical B.V, EA Almelo, The Netherlands) and Cu Kα radiation (λ = 0.15418 nm), and the samples were prepared on a Si substrate. Raman spectroscopy measurements were performed in Witec Alpha 300R confocal Raman Microscopy system with a 50× objective (WITec Wissenschaftliche Instrumente and Technologie GmbH

Engineering of oriented carbon nanotubes in composite materials

• Razieh Beigmoradi,
• Abdolreza Samimi and
• Davod Mohebbi-Kalhori

Beilstein J. Nanotechnol. 2018, 9, 415–435, doi:10.3762/bjnano.9.41

• of a wide range of materials, spraying can be combined with other methods to fabricate composite materials. In this method, a sheet of CNTs is produced by chemical vapor deposition (CVD) on a SiO2/Si substrate that is coated with a very thin layer of iron as a catalyst. The CNT rows have been grown

• solution and a nozzle to control the N2 flow direction on the Si substrate. SEM image of aligned CNTs is reproduced with permission from [95], copyright 2005 American Institute of Physics. Schematic structure of a liquid crystal (blue ellipsoids) and CNT (black cylinders) rearrangement under an external

Periodic structures on liquid-phase smectic A, nematic and isotropic free surfaces

• Anna N. Bagdinova,
• Evgeny I. Demikhov,
• Nataliya G. Borisenko,
• Sergei M. Tolokonnikov,
• Gennadii V. Mishakov and
• Andrei V. Sharkov

Beilstein J. Nanotechnol. 2018, 9, 342–352, doi:10.3762/bjnano.9.34

• temperature (a) and its cross-section (b). Periodic structure formation after Cry–SmA phase transition at room temperature. Topographical AFM (a) and SNOM (b) SmA droplet edge images on Si substrate, AFM and SNOM cross-sections (c) and (d). Periodic SmA structure formation at room temperature after cooling

• from the nematic phase. Topographical (a) and SNOM (b) images of SmA on Si substrate droplet edge, cross sections of both images (c) and (d). Equilibrium surface state of SmA phase after 30 minutes of relaxation at room temperature. SNOM image of SmA on Si substrate droplet edge at room temperature (a

• ), optical image cross-section (b). Periodic structure formation in the nematic phase at 38 °С. Topographical (a) and optical (b) SNOM image of SmA on Si substrate, cross-sections of both images (c) and (d). SNOM image of LC film on the Si substrate at 46 °С (isotropic liquid). Schematic illustration of

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

• Alexey D. Bolshakov,
• Alexey M. Mozharov,
• Georgiy A. Sapunov,
• Igor V. Shtrom,
• Nickolay V. Sibirev,
• Vladimir V. Fedorov,
• Evgeniy V. Ubyivovk,
• Maria Tchernycheva,
• George E. Cirlin and
• Ivan S. Mukhin

Beilstein J. Nanotechnol. 2018, 9, 146–154, doi:10.3762/bjnano.9.17

• ]. The fabrication of a simple SC based on GaN NWs on Si(111) can be obtained via proper NW doping and formation of a p–n junction at Si substrate–GaN NW interface. Recently it has been theoretically demonstrated that optimization of the doping level and NW array morphology can lead to a power conversion

Comparative study of post-growth annealing of Cu(hfac)₂, Co₂(CO)₈ and Me₂Au(acac) metal precursors deposited by FEBID

• Marcos V. Puydinger dos Santos,
• Aleksandra Szkudlarek,
• Artur Rydosz,
• Carlos Guerra-Nuñez,
• Fanny Béron,
• Kleber R. Pirota,
• Stanislav Moshkalev,
• José Alexandre Diniz and
• Ivo Utke

Beilstein J. Nanotechnol. 2018, 9, 91–101, doi:10.3762/bjnano.9.11

• spectrum extracted far from the deposition area (see Supporting Information File 1). Finally, the SAMx STRATAGem software for thin film analysis was used to calculate the atomic composition of the FEBID deposits. In this way the EDX signal contribution from both the Si substrate and the 200 nm thick SiO2

• resistance reduction of three orders of magnitude. The resulting material comprises pure nucleated Au grains with around 16 nm average size. Optical microscopy images showing the 200 nm SiO2/Si substrate and gold electrodes together with (a) 35 nm thick Co–C, (b) 50 nm thick Cu–C and (c) 50 nm thick Au–C FEB

• signal from the chamber, thus highlighting the efficiency of the H2-based purification method. Silicon and oxygen signals originate from the SiO2/Si substrate. (c) Optical (top) and scanning electron (bottom) microscopies of both as-deposited and annealed at 360 °C Au–C FEBID material. This annealing

Material discrimination and mixture ratio estimation in nanocomposites via harmonic atomic force microscopy

• Weijie Zhang,
• Yuhang Chen,
• Xicheng Xia and
• Jiaru Chu

Beilstein J. Nanotechnol. 2017, 8, 2771–2780, doi:10.3762/bjnano.8.276

• are found in the histograms demonstrated in Figure 7d. The peaks are centered at 505, 559 and 665 pm, which correspond to SiO2 NPs, Si substrate and PS NPs, respectively. The three materials can be clearly separated in the harmonic amplitude images. However, larger harmonic amplitudes do not occur for

Dry adhesives from carbon nanofibers grown in an open ethanol flame

• Christian Lutz,
• Julia Syurik,
• C. N. Shyam Kumar,
• Christian Kübel,
• Michael Bruns and
• Hendrik Hölscher

Beilstein J. Nanotechnol. 2017, 8, 2719–2728, doi:10.3762/bjnano.8.271

• its pure state before growth [35]. Based on our observations, we conclude that the 60 nm copper layer on the Si substrate plays an important role for the reduction of the nickel catalysts because experiments with nickel on pure Si or SiO2 substrates without copper show no or diminishing CNF growth

Patterning of supported gold monolayers via chemical lift-off lithography

• Liane S. Slaughter,
• Kevin M. Cheung,
• Sami Kaappa,
• Huan H. Cao,
• Qing Yang,
• Thomas D. Young,
• Andrew C. Serino,
• Sami Malola,
• Jana M. Olson,
• Stephan Link,
• Hannu Häkkinen,
• Anne M. Andrews and
• Paul S. Weiss

Beilstein J. Nanotechnol. 2017, 8, 2648–2661, doi:10.3762/bjnano.8.265

• on the Au-on-Si substrate, from which Au complexes were removed, appeared as recessed circles, demonstrating that lift-off occurred in a chemically selective manner. The X-ray photoelectron spectroscopy (XPS) spectra of patterned PDMS illustrated the presence of Au in the regions predominantly

Direct writing of gold nanostructures with an electron beam: On the way to pure nanostructures by combining optimized deposition with oxygen-plasma treatment

• Domagoj Belić,
• Mostafa M. Shawrav,
• Emmerich Bertagnolli and
• Heinz D. Wanzenboeck

Beilstein J. Nanotechnol. 2017, 8, 2530–2543, doi:10.3762/bjnano.8.253

• introduced into the high-vacuum chamber of a custom-modified SEM via home-built gas injection system (GIS) [42], in such a way that a nozzle was brought into close vicinity (≈200 μm) of the intended deposition spot on a prepared p-type Si substrate. When a beam of primary electrons impacts on the surface

Comparing postdeposition reactions of electrons and radicals with Pt nanostructures created by focused electron beam induced deposition

• Julie A. Spencer,
• Michael Barclay,
• Miranda J. Gallagher,
• Robert Winkler,
• Ilyas Unlu,
• Yung-Chien Wu,
• Harald Plank,
• Lisa McElwee-White and
• D. Howard Fairbrother

Beilstein J. Nanotechnol. 2017, 8, 2410–2424, doi:10.3762/bjnano.8.240

• smooth nature of the Mo/Si substrate as well as the presence of an ≈100 nm high feature which can reasonably be assumed to be purified Pt. Figure 5 shows the evolution of a PtCl2 deposit as it was exposed to increasing doses of AH from the high-pressure source. After this deposit was first exposed to the

Electron beam induced deposition of silacyclohexane and dichlorosilacyclohexane: the role of dissociative ionization and dissociative electron attachment in the deposition process

• Ragesh Kumar T P,
• Sangeetha Hari,
• Krishna K Damodaran,
• Oddur Ingólfsson and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2017, 8, 2376–2388, doi:10.3762/bjnano.8.237

• better estimate of the number of low-energy electrons in the relevant energy range, a Monte Carlo simulation of the angular distribution of electrons escaping from a Si half sphere on the top of a Si surface was conducted. The sample for the simulation was a flat Si substrate with a 1 nm diameter Si half

• sphere on top, resembling a tiny Si deposit on a Si substrate (Figure 10a). The simulator contains the best possible physics models and runs on a GPU [48][49]. A “zero-diameter” 20 keV incident electron beam is directed on top of the half sphere, and subsequently all electrons emitted from the sample are

• ) SCH. The first (1) and last (25) pillars are indicated and the order of deposition is as shown in Figure 7b. Monte Carlo simulation of the angular distribution of electrons emitted from a flat Si substrate with a 1 nm diameter Si half sphere on top (a), upon exposure with a “zero-diameter” 20 keV

Optical contrast and refractive index of natural van der Waals heterostructure nanosheets of franckeite

• Patricia Gant,
• Foad Ghasemi,
• David Maeso,
• Carmen Munuera,
• Elena López-Elvira,
• Riccardo Frisenda,
• David Pérez De Lara,
• Gabino Rubio-Bollinger,
• Mar Garcia-Hernandez and
• Andres Castellanos-Gomez

Beilstein J. Nanotechnol. 2017, 8, 2357–2362, doi:10.3762/bjnano.8.235

• Gelpak®) carrier substrate and then transferred to a SiO2/Si substrate by means of an all-dry transfer technique [24]. We employed two different nominal SiO2 thicknesses (ca. 90 and ca. 290 nm) to probe the role of the SiO2 thickness on the optical identification process. We selected those thickness

• substrates at first glance. Figure 2d–f shows similar information as Figure 2a–c but for flakes transferred onto a 92 nm SiO2/Si substrate. Below Figure 2d–f, we include another colour chart for the quick identification of franckeite flakes on 92 nm SiO2 substrates. Another method to estimate the thickness

• technique. By measuring the light reflected by the bare SiO2/Si substrate (Is) and by the flake laying on the SiO2/Si substrate (If) one can determine the optical contrast, C, defined as [2]: Figure 4 shows some optical contrast spectra acquired on franckeite flakes with different thicknesses transferred

Expanding the molecular-ruler process through vapor deposition of hexadecanethiol

• Alexandra M. Patron,
• Timothy S. Hooker,
• Daniel F. Santavicca,
• Corey P. Causey and
• Thomas J. Mullen

Beilstein J. Nanotechnol. 2017, 8, 2339–2344, doi:10.3762/bjnano.8.233

• lowest-intensity region between the two Au regions corresponds to the nanogap where the Si substrate is exposed. This nanogap measures 26.0 ± 4.3 nm and is consistent with the thickness of the Cu-ligated MHDA decalayer measured via spectroscopic ellipsometry (24.8 ± 0.1 nm) and the thickness of Cu

Fabrication of gold-coated PDMS surfaces with arrayed triangular micro/nanopyramids for use as SERS substrates

• Jingran Zhang,
• Yongda Yan,
• Peng Miao and
• Jianxiong Cai

Beilstein J. Nanotechnol. 2017, 8, 2271–2282, doi:10.3762/bjnano.8.227

• approximately 1 μm. The signal detector used a Renishaw CCD camera (1040 × 256) a grating size of 1800 lines/mm was employed. The exposure time was set to 1 s and one accumulation scan was made. The mapping images of the micro-Raman spectrum were scanned over a 20 × 20 μm2 area. Before the tests, a standard Si

• substrate was employed to rectify the Raman spectrum, and no specific peaks were found. The Raman intensity R6G probe peak was chosen as 1362 cm−1 for the experiment, which is the major Raman peak for R6G molecules. A Dimension Icon AFM system (Bruker, Germany) was used to observe the topography of the