Optical near-field mapping of plasmonic nanostructures prepared by nanosphere lithography

• Gitanjali Kolhatkar,
• Alexandre Merlen,
• Jiawei Zhang,
• Chahinez Dab,
• Gregory Q. Wallace,
• François Lagugné-Labarthet and
• Andreas Ruediger

Beilstein J. Nanotechnol. 2018, 9, 1536–1543, doi:10.3762/bjnano.9.144

• (gold or silver) nanotriangles deposited on a glass or Si substrate, are of high interest to study plasmonics, and more specifically localised surface plasmon resonance (LSPR) [23][24]. Indeed, their geometry and their metallic nature result in the spatial confinement of the electric field at their

Magnetic characterization of cobalt nanowires and square nanorings fabricated by focused electron beam induced deposition

• Federico Venturi,
• Gian Carlo Gazzadi,
• Amir H. Tavabi,
• Alberto Rota,
• Rafal E. Dunin-Borkowski and
• Stefano Frabboni

Beilstein J. Nanotechnol. 2018, 9, 1040–1049, doi:10.3762/bjnano.9.97

• secondary electron generation by the primary beam interacting with the Si substrate, which is thicker and denser than the C substrate. Energy-dispersive X-ray spectroscopy (EDX) provided measured compositions that depended on the substrate and deposition energy. A spectrum recorded from the bare substrate

• state is higher than that applied during horseshoe state observation. In order to validate the L-TEM results obtained at remanence and to measure the three-dimensional (3D) topography of the sample, additional analyses were carried out using AFM and MFM. A square nanoring was deposited at 5 keV on a Si

• substrate for MFM analysis. An AFM topography image is shown in Figure 4a, while a height profile taken across the middle of the nanoring is shown in Figure 4b. Both sides have a thickness of ca. 40 nm, a length of 1 μm and a width of ca. 100 nm. A topographic map of the same area is shown in Figure 4c. In

Comparative study of sculptured metallic thin films deposited by oblique angle deposition at different temperatures

• Susann Liedtke,
• Christoph Grüner,
• Jürgen W. Gerlach and
• Bernd Rauschenbach

Beilstein J. Nanotechnol. 2018, 9, 954–962, doi:10.3762/bjnano.9.89

• measured with respect to the substrate normal (see (e) and (g)). Intensity (a.u.) is depicted on a linear scale (see scale bar) and applies for all measured in-plane pole figures ((e)–(h)). Schematic illustration of a tilted Al column deposited on a thermally oxidized Si substrate at an oblique angle θ

Effect of annealing treatments on CeO₂ grown on TiN and Si substrates by atomic layer deposition

• Silvia Vangelista,
• Rossella Piagge,
• Satu Ek and
• Alessio Lamperti

Beilstein J. Nanotechnol. 2018, 9, 890–899, doi:10.3762/bjnano.9.83

• the signal connected with OH− content progressively decreases (not shown). This demonstrates that ceria film deposited on SiO2/Si substrate can sustain annealing at high temperatures up to 900 °C without major concerns regarding the onset of interdiffusion and interface stability. The cross-sectional

• annealing induces severe oxidation on TiN with a broadening of the interface with CeO2 and potential local mixing, which limit its integration in a technological process. On the contrary, the high stability of the Si substrate (apart from its oxidation at the interface) allows to increase the annealing

Tuning adhesion forces between functionalized gold colloidal nanoparticles and silicon AFM tips: role of ligands and capillary forces

• Sven Oras,
• Sergei Vlassov,
• Marta Berholts,
• Rünno Lõhmus and
• Karine Mougin

Beilstein J. Nanotechnol. 2018, 9, 660–670, doi:10.3762/bjnano.9.61

• in a PeakForce QNM Mode. Figure 2 displays AFM images of Au NPs topography and adhesion along with typical force–distance curves for Au NPs and Si substrate. Results show that adhesion force values are highly modulated by the nature of the tail group of the NPs thin coating as well as the NPs

Green synthesis of fluorescent carbon dots from spices for in vitro imaging and tumour cell growth inhibition

• Nagamalai Vasimalai,
• Vânia Vilas-Boas,
• Juan Gallo,
• María de Fátima Cerqueira,
• Mario Menéndez-Miranda,
• José Manuel Costa-Fernández,
• Lorena Diéguez,
• Begoña Espiña and
• María Teresa Fernández-Argüelles

Beilstein J. Nanotechnol. 2018, 9, 530–544, doi:10.3762/bjnano.9.51

• (PanAnalytical B.V, EA Almelo, The Netherlands) and Cu Kα radiation (λ = 0.15418 nm), and the samples were prepared on a Si substrate. Raman spectroscopy measurements were performed in Witec Alpha 300R confocal Raman Microscopy system with a 50× objective (WITec Wissenschaftliche Instrumente and Technologie GmbH

Engineering of oriented carbon nanotubes in composite materials

• Razieh Beigmoradi,
• Abdolreza Samimi and
• Davod Mohebbi-Kalhori

Beilstein J. Nanotechnol. 2018, 9, 415–435, doi:10.3762/bjnano.9.41

• of a wide range of materials, spraying can be combined with other methods to fabricate composite materials. In this method, a sheet of CNTs is produced by chemical vapor deposition (CVD) on a SiO2/Si substrate that is coated with a very thin layer of iron as a catalyst. The CNT rows have been grown

• solution and a nozzle to control the N2 flow direction on the Si substrate. SEM image of aligned CNTs is reproduced with permission from [95], copyright 2005 American Institute of Physics. Schematic structure of a liquid crystal (blue ellipsoids) and CNT (black cylinders) rearrangement under an external

Periodic structures on liquid-phase smectic A, nematic and isotropic free surfaces

• Anna N. Bagdinova,
• Evgeny I. Demikhov,
• Nataliya G. Borisenko,
• Sergei M. Tolokonnikov,
• Gennadii V. Mishakov and
• Andrei V. Sharkov

Beilstein J. Nanotechnol. 2018, 9, 342–352, doi:10.3762/bjnano.9.34

• temperature (a) and its cross-section (b). Periodic structure formation after Cry–SmA phase transition at room temperature. Topographical AFM (a) and SNOM (b) SmA droplet edge images on Si substrate, AFM and SNOM cross-sections (c) and (d). Periodic SmA structure formation at room temperature after cooling

• from the nematic phase. Topographical (a) and SNOM (b) images of SmA on Si substrate droplet edge, cross sections of both images (c) and (d). Equilibrium surface state of SmA phase after 30 minutes of relaxation at room temperature. SNOM image of SmA on Si substrate droplet edge at room temperature (a

• ), optical image cross-section (b). Periodic structure formation in the nematic phase at 38 °С. Topographical (a) and optical (b) SNOM image of SmA on Si substrate, cross-sections of both images (c) and (d). SNOM image of LC film on the Si substrate at 46 °С (isotropic liquid). Schematic illustration of

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

• Alexey D. Bolshakov,
• Alexey M. Mozharov,
• Georgiy A. Sapunov,
• Igor V. Shtrom,
• Nickolay V. Sibirev,
• Vladimir V. Fedorov,
• Evgeniy V. Ubyivovk,
• Maria Tchernycheva,
• George E. Cirlin and
• Ivan S. Mukhin

Beilstein J. Nanotechnol. 2018, 9, 146–154, doi:10.3762/bjnano.9.17

• ]. The fabrication of a simple SC based on GaN NWs on Si(111) can be obtained via proper NW doping and formation of a p–n junction at Si substrate–GaN NW interface. Recently it has been theoretically demonstrated that optimization of the doping level and NW array morphology can lead to a power conversion

Comparative study of post-growth annealing of Cu(hfac)₂, Co₂(CO)₈ and Me₂Au(acac) metal precursors deposited by FEBID

• Marcos V. Puydinger dos Santos,
• Aleksandra Szkudlarek,
• Artur Rydosz,
• Carlos Guerra-Nuñez,
• Fanny Béron,
• Kleber R. Pirota,
• Stanislav Moshkalev,
• José Alexandre Diniz and
• Ivo Utke

Beilstein J. Nanotechnol. 2018, 9, 91–101, doi:10.3762/bjnano.9.11

• spectrum extracted far from the deposition area (see Supporting Information File 1). Finally, the SAMx STRATAGem software for thin film analysis was used to calculate the atomic composition of the FEBID deposits. In this way the EDX signal contribution from both the Si substrate and the 200 nm thick SiO2

• resistance reduction of three orders of magnitude. The resulting material comprises pure nucleated Au grains with around 16 nm average size. Optical microscopy images showing the 200 nm SiO2/Si substrate and gold electrodes together with (a) 35 nm thick Co–C, (b) 50 nm thick Cu–C and (c) 50 nm thick Au–C FEB

• signal from the chamber, thus highlighting the efficiency of the H2-based purification method. Silicon and oxygen signals originate from the SiO2/Si substrate. (c) Optical (top) and scanning electron (bottom) microscopies of both as-deposited and annealed at 360 °C Au–C FEBID material. This annealing

Material discrimination and mixture ratio estimation in nanocomposites via harmonic atomic force microscopy

• Weijie Zhang,
• Yuhang Chen,
• Xicheng Xia and
• Jiaru Chu

Beilstein J. Nanotechnol. 2017, 8, 2771–2780, doi:10.3762/bjnano.8.276

• are found in the histograms demonstrated in Figure 7d. The peaks are centered at 505, 559 and 665 pm, which correspond to SiO2 NPs, Si substrate and PS NPs, respectively. The three materials can be clearly separated in the harmonic amplitude images. However, larger harmonic amplitudes do not occur for

Dry adhesives from carbon nanofibers grown in an open ethanol flame

• Christian Lutz,
• Julia Syurik,
• C. N. Shyam Kumar,
• Christian Kübel,
• Michael Bruns and
• Hendrik Hölscher

Beilstein J. Nanotechnol. 2017, 8, 2719–2728, doi:10.3762/bjnano.8.271

• its pure state before growth [35]. Based on our observations, we conclude that the 60 nm copper layer on the Si substrate plays an important role for the reduction of the nickel catalysts because experiments with nickel on pure Si or SiO2 substrates without copper show no or diminishing CNF growth

Patterning of supported gold monolayers via chemical lift-off lithography

• Liane S. Slaughter,
• Kevin M. Cheung,
• Sami Kaappa,
• Huan H. Cao,
• Qing Yang,
• Thomas D. Young,
• Andrew C. Serino,
• Sami Malola,
• Jana M. Olson,
• Stephan Link,
• Hannu Häkkinen,
• Anne M. Andrews and
• Paul S. Weiss

Beilstein J. Nanotechnol. 2017, 8, 2648–2661, doi:10.3762/bjnano.8.265

• on the Au-on-Si substrate, from which Au complexes were removed, appeared as recessed circles, demonstrating that lift-off occurred in a chemically selective manner. The X-ray photoelectron spectroscopy (XPS) spectra of patterned PDMS illustrated the presence of Au in the regions predominantly

Direct writing of gold nanostructures with an electron beam: On the way to pure nanostructures by combining optimized deposition with oxygen-plasma treatment

• Domagoj Belić,
• Mostafa M. Shawrav,
• Emmerich Bertagnolli and
• Heinz D. Wanzenboeck

Beilstein J. Nanotechnol. 2017, 8, 2530–2543, doi:10.3762/bjnano.8.253

• introduced into the high-vacuum chamber of a custom-modified SEM via home-built gas injection system (GIS) [42], in such a way that a nozzle was brought into close vicinity (≈200 μm) of the intended deposition spot on a prepared p-type Si substrate. When a beam of primary electrons impacts on the surface

Comparing postdeposition reactions of electrons and radicals with Pt nanostructures created by focused electron beam induced deposition

• Julie A. Spencer,
• Michael Barclay,
• Miranda J. Gallagher,
• Robert Winkler,
• Ilyas Unlu,
• Yung-Chien Wu,
• Harald Plank,
• Lisa McElwee-White and
• D. Howard Fairbrother

Beilstein J. Nanotechnol. 2017, 8, 2410–2424, doi:10.3762/bjnano.8.240

• smooth nature of the Mo/Si substrate as well as the presence of an ≈100 nm high feature which can reasonably be assumed to be purified Pt. Figure 5 shows the evolution of a PtCl2 deposit as it was exposed to increasing doses of AH from the high-pressure source. After this deposit was first exposed to the

Electron beam induced deposition of silacyclohexane and dichlorosilacyclohexane: the role of dissociative ionization and dissociative electron attachment in the deposition process

• Ragesh Kumar T P,
• Sangeetha Hari,
• Krishna K Damodaran,
• Oddur Ingólfsson and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2017, 8, 2376–2388, doi:10.3762/bjnano.8.237

• better estimate of the number of low-energy electrons in the relevant energy range, a Monte Carlo simulation of the angular distribution of electrons escaping from a Si half sphere on the top of a Si surface was conducted. The sample for the simulation was a flat Si substrate with a 1 nm diameter Si half

• sphere on top, resembling a tiny Si deposit on a Si substrate (Figure 10a). The simulator contains the best possible physics models and runs on a GPU [48][49]. A “zero-diameter” 20 keV incident electron beam is directed on top of the half sphere, and subsequently all electrons emitted from the sample are

• ) SCH. The first (1) and last (25) pillars are indicated and the order of deposition is as shown in Figure 7b. Monte Carlo simulation of the angular distribution of electrons emitted from a flat Si substrate with a 1 nm diameter Si half sphere on top (a), upon exposure with a “zero-diameter” 20 keV

Optical contrast and refractive index of natural van der Waals heterostructure nanosheets of franckeite

• Patricia Gant,
• Foad Ghasemi,
• David Maeso,
• Carmen Munuera,
• Elena López-Elvira,
• Riccardo Frisenda,
• David Pérez De Lara,
• Gabino Rubio-Bollinger,
• Mar Garcia-Hernandez and
• Andres Castellanos-Gomez

Beilstein J. Nanotechnol. 2017, 8, 2357–2362, doi:10.3762/bjnano.8.235

• Gelpak®) carrier substrate and then transferred to a SiO2/Si substrate by means of an all-dry transfer technique [24]. We employed two different nominal SiO2 thicknesses (ca. 90 and ca. 290 nm) to probe the role of the SiO2 thickness on the optical identification process. We selected those thickness

• substrates at first glance. Figure 2d–f shows similar information as Figure 2a–c but for flakes transferred onto a 92 nm SiO2/Si substrate. Below Figure 2d–f, we include another colour chart for the quick identification of franckeite flakes on 92 nm SiO2 substrates. Another method to estimate the thickness

• technique. By measuring the light reflected by the bare SiO2/Si substrate (Is) and by the flake laying on the SiO2/Si substrate (If) one can determine the optical contrast, C, defined as [2]: Figure 4 shows some optical contrast spectra acquired on franckeite flakes with different thicknesses transferred

Expanding the molecular-ruler process through vapor deposition of hexadecanethiol

• Alexandra M. Patron,
• Timothy S. Hooker,
• Daniel F. Santavicca,
• Corey P. Causey and
• Thomas J. Mullen

Beilstein J. Nanotechnol. 2017, 8, 2339–2344, doi:10.3762/bjnano.8.233

• lowest-intensity region between the two Au regions corresponds to the nanogap where the Si substrate is exposed. This nanogap measures 26.0 ± 4.3 nm and is consistent with the thickness of the Cu-ligated MHDA decalayer measured via spectroscopic ellipsometry (24.8 ± 0.1 nm) and the thickness of Cu

Fabrication of gold-coated PDMS surfaces with arrayed triangular micro/nanopyramids for use as SERS substrates

• Jingran Zhang,
• Yongda Yan,
• Peng Miao and
• Jianxiong Cai

Beilstein J. Nanotechnol. 2017, 8, 2271–2282, doi:10.3762/bjnano.8.227

• approximately 1 μm. The signal detector used a Renishaw CCD camera (1040 × 256) a grating size of 1800 lines/mm was employed. The exposure time was set to 1 s and one accumulation scan was made. The mapping images of the micro-Raman spectrum were scanned over a 20 × 20 μm2 area. Before the tests, a standard Si

• substrate was employed to rectify the Raman spectrum, and no specific peaks were found. The Raman intensity R6G probe peak was chosen as 1362 cm−1 for the experiment, which is the major Raman peak for R6G molecules. A Dimension Icon AFM system (Bruker, Germany) was used to observe the topography of the

Substrate and Mg doping effects in GaAs nanowires

• Perumal Kannappan,
• Nabiha Ben Sedrine,
• Jennifer P. Teixeira,
• Maria R. Soares,
• Bruno P. Falcão,
• Maria R. Correia,
• Nestor Cifuentes,
• Emilson R. Viana,
• Marcus V. B. Moreira,
• Geraldo M. Ribeiro,
• Alfredo G. de Oliveira,
• Juan C. González and
• Joaquim P. Leitão

Beilstein J. Nanotechnol. 2017, 8, 2126–2138, doi:10.3762/bjnano.8.212

• -doped GaAs nanowires, grown on a GaAs(111)B substrate, with approximately constant diameters (≈190 nm) along the axis, onto a heavily doped Si substrate covered by a 300 nm thick SiO2 layer. Standard photolithography methods were used to define several contact lines, with a lateral separation of 3 to 9

• GaAs nanowires grown on a Si(111) substrate, which could be due to a higher density of defects as a result of the lattice mismatch between GaAs nanowires and the Si substrate. In the case of the nanowires grown on a Si(111) substrate, the transition at 1.461 eV, observed up to room temperature, almost

High-stress study of bioinspired multifunctional PEDOT:PSS/nanoclay nanocomposites using AFM, SEM and numerical simulation

• Alfredo J. Diaz,
• Hanaul Noh,
• Tobias Meier and
• Santiago D. Solares

Beilstein J. Nanotechnol. 2017, 8, 2069–2082, doi:10.3762/bjnano.8.207

• in Figure 5b. The measurement shows a thickness of approximately 3 nm (red curve) in lightly repulsive imaging mode (free amplitude of 60 nm). This sample was prepared by diluting the “as prepared” dispersion and depositing it onto a Si substrate in order to separate the individual nanoplatelets (the

Advances and challenges in the field of plasma polymer nanoparticles

• Andrei Choukourov,
• Pavel Pleskunov,
• Daniil Nikitin,
• Valerii Titov,
• Artem Shelemin,
• Mykhailo Vaidulych,
• Anna Kuzminova,
• Pavel Solař,
• Jan Hanuš,
• Jaroslav Kousal,
• Ondřej Kylián,
• Danka Slavínská and
• Hynek Biederman

Beilstein J. Nanotechnol. 2017, 8, 2002–2014, doi:10.3762/bjnano.8.200

• ; b) GLAD of nylon-sputtered plasma polymer over the preseeded NPs. SEM images with combined top view and cross-sections of the deposits produced as a result of RF magnetron sputtering of nylon: a) normal deposition on blank Si substrate; b) GLAD at 80° on blank Si substrate; c) normal deposition over

Identifying the nature of surface chemical modification for directed self-assembly of block copolymers

• Laura Evangelio,
• Federico Gramazio,
• Matteo Lorenzoni,
• Michaela Gorgoi,
• Francisco Miguel Espinosa,
• Ricardo García,
• Francesc Pérez-Murano and
• Jordi Fraxedas

Beilstein J. Nanotechnol. 2017, 8, 1972–1981, doi:10.3762/bjnano.8.198

• oxide between the brush layer and the SiO2/Si substrate. Experimental Preparation and chemical modification of brush layers The starting substrates were <100> silicon wafers (p-type silicon of 4–40 Ω·cm resistivity) with a native silicon oxide layer on top. A thin film of hydroxyl-terminated polystyrene

Imidazolium-based ionic liquids used as additives in the nanolubrication of silicon surfaces

• Patrícia M. Amorim,
• Ana M. Ferraria,
• Rogério Colaço,
• Luís C. Branco and
• Benilde Saramago

Beilstein J. Nanotechnol. 2017, 8, 1961–1971, doi:10.3762/bjnano.8.197

• the first time that these ILs are successfully tested as additives to base lubricants. Strong adsorption of [EtSO4] on the surface oxide that covers the Si substrate should be responsible for this behavior. The S–O bond of this anion is known to interact with the silica surface to yield Si–O–S bonds

Intercalation of Si between MoS₂ layers

• Rik van Bremen,
• Qirong Yao,
• Soumya Banerjee,
• Deniz Cakir,
• Nuri Oncel and
• Harold J. W. Zandvliet

Beilstein J. Nanotechnol. 2017, 8, 1952–1960, doi:10.3762/bjnano.8.196

• reveal no noteworthy differences. (4) Spatial maps of dI/dz reveal that the surface exhibits a uniform work function and a lattice constant of 3.16 Å. (5) X-ray photo-electron spectroscopy measurements reveal that sputtering of the MoS2/Si substrate does not lead to a decrease, but an increase of the