Search results

Search for "etching" in Full Text gives 340 result(s) in Beilstein Journal of Nanotechnology. Showing first 200.

Interaction of Te and Se interlayers with Ag or Au nanofilms in sandwich structures

  • Arkadiusz Ciesielski,
  • Lukasz Skowronski,
  • Marek Trzcinski,
  • Ewa Górecka,
  • Wojciech Pacuski and
  • Tomasz Szoplik

Beilstein J. Nanotechnol. 2019, 10, 238–246, doi:10.3762/bjnano.10.22

Graphical Abstract
  • sandwich-like structures at which 2 nm of Te or Se was deposited on top of 20 nm Ag or Au and then covered with another 20 nm of the same metal. Then the sample was stored for 20 days in order to allow for the diffusion and segregation progress. Then, XPS measurements interlaced with Ar-ion etching allowed
  • for measurement of the atomic concentration of Te in such structures as a function of etching time, which is equivalent to the subsurface depth. The results for Te are presented in Figure 2 (left). A very high concentration of tellurium around the seventh to eighth minute of etching, which is
  • results) or at least the greatest at the middle of it. This is not the case since there is a profound dip after 6–7 minutes of etching. This indicates that tellurium has indeed segregated (and not diffused) into the silver structure. However, unlike germanium, which segregates only towards the surface of
PDF
Album
Full Research Paper
Published 21 Jan 2019

Sputtering of silicon nanopowders by an argon cluster ion beam

  • Xiaomei Zeng,
  • Vasiliy Pelenovich,
  • Zhenguo Wang,
  • Wenbin Zuo,
  • Sergey Belykh,
  • Alexander Tolstogouzov,
  • Dejun Fu and
  • Xiangheng Xiao

Beilstein J. Nanotechnol. 2019, 10, 135–143, doi:10.3762/bjnano.10.13

Graphical Abstract
  • near 17 keV. The dose and energy dependence of the sputtering yield was explained by the competition of the finite size effect and the effect of debris formation. Keywords: finite size effect; gas cluster ion beam; silicon nanoparticles; smoothing effect; sputtering; Introduction Etching using gas
PDF
Album
Full Research Paper
Published 10 Jan 2019

Bidirectional biomimetic flow sensing with antiparallel and curved artificial hair sensors

  • Claudio Abels,
  • Antonio Qualtieri,
  • Toni Lober,
  • Alessandro Mariotti,
  • Lily D. Chambers,
  • Massimo De Vittorio,
  • William M. Megill and
  • Francesco Rizzi

Beilstein J. Nanotechnol. 2019, 10, 32–46, doi:10.3762/bjnano.10.4

Graphical Abstract
  • . Experimental Sensor fabrication During the fabrication process, thin silicon nitride/silicon layers are stacked together on a silicon wafer substrate and precisely shaped into the desired cantilever geometry by performing an etching process. In the following, we describe the MEMS fabrication process for the
  • ) piezoresistors, which are 100 nm thick and distributed along the full length of the cantilever beam. In a subsequent deposition step, four 150 nm thick gold (Au) contact pads are deposited. Defining the cantilever U-shapes: A trifluoromethane (CHF3) based inductively coupled plasma (ICP) dry etching step at the
  • substrate top side was performed to generate the U-shaped release patterns for two cantilever beams. The top side SiN layer is patterned and etching is stopped at the silicon device layer (300 nm etching depth). Releasing the cantilevers: In this manufacturing step, the generated U-shaped patterns are used
PDF
Album
Full Research Paper
Published 03 Jan 2019

Femtosecond laser-assisted fabrication of chalcopyrite micro-concentrator photovoltaics

  • Franziska Ringleb,
  • Stefan Andree,
  • Berit Heidmann,
  • Jörn Bonse,
  • Katharina Eylers,
  • Owen Ernst,
  • Torsten Boeck,
  • Martina Schmid and
  • Jörg Krüger

Beilstein J. Nanotechnol. 2018, 9, 3025–3038, doi:10.3762/bjnano.9.281

Graphical Abstract
  • the one hand, studies were published in which CIGSe micro solar cells have been produced by top-down approaches such as etching or shading of flat absorbers. Paire et al. achieved an absolute increase in efficiency of 5% with 475 suns [12] and Reinhold et al. up to 4.8% for point-shaped cells [13
  • ]. They demonstrated that the increase in cell efficiency and the optimum light concentration varied with the size of the cells. Lotter et al. achieved a CIGSe micro cell efficiency as high as 22.5% under 77 suns by selective etching of the front contact layers [14]. While these studies show the
  • layer was always observed. In order to avoid the undesired formation of a thin CuGaSe2 layer connecting the separate CIGSe islands after processing, this gallium wetting layer was removed by a mild reactive ion etching step in Ar+ plasma. LIFT approach The second approach presented here for the
PDF
Album
Review
Published 12 Dec 2018

Hydrogen-induced plasticity in nanoporous palladium

  • Markus Gößler,
  • Eva-Maria Steyskal,
  • Markus Stütz,
  • Norbert Enzinger and
  • Roland Würschum

Beilstein J. Nanotechnol. 2018, 9, 3013–3024, doi:10.3762/bjnano.9.280

Graphical Abstract
  • metallic nanoporous structures. By exposing a (binary) alloy to an etching agent, the less noble component is gradually removed, while enhancing the surface diffusivity of the other. Surface diffusion is of special importance for the formation of nanoporous networks, as passivation of the alloy surface due
  • to a flawless coverage by the noble component prevents the etching process. After Erlebacher et al. delivered a full description of the dealloying process on an atomistic scale [10], the process itself has been extensively studied [11][12][13], while being used to prepare a broad variety of different
PDF
Album
Full Research Paper
Published 10 Dec 2018

Electrostatic force microscopy for the accurate characterization of interphases in nanocomposites

  • Diana El Khoury,
  • Richard Arinero,
  • Jean-Charles Laurentie,
  • Mikhaël Bechelany,
  • Michel Ramonda and
  • Jérôme Castellon

Beilstein J. Nanotechnol. 2018, 9, 2999–3012, doi:10.3762/bjnano.9.279

Graphical Abstract
  • 0.011 mbar. O2 was then introduced using a needle valve, and the pressure was equilibrated to 0.6 mbar by adjusting the valve. After the equilibrium pressure was reached, a radio frequency power of 50 W at 0.15 A was applied until the desired diameter (around 380 nm after 16 min etching) was obtained
PDF
Album
Full Research Paper
Published 07 Dec 2018

Charged particle single nanometre manufacturing

  • Philip D. Prewett,
  • Cornelis W. Hagen,
  • Claudia Lenk,
  • Steve Lenk,
  • Marcus Kaestner,
  • Tzvetan Ivanov,
  • Ahmad Ahmad,
  • Ivo W. Rangelow,
  • Xiaoqing Shi,
  • Stuart A. Boden,
  • Alex P. G. Robinson,
  • Dongxu Yang,
  • Sangeetha Hari,
  • Marijke Scotuzzi and
  • Ejaz Huq

Beilstein J. Nanotechnol. 2018, 9, 2855–2882, doi:10.3762/bjnano.9.266

Graphical Abstract
  • , nanomaterials and nano-electro-mechanical systems. Until now, the leading method for scaled-up fabrication of nanostructures has been optical lithography, combined with pattern transfer techniques including plasma etching. Despite its success, optical lithography is reaching its resolution limits and new
  • lithography are the leading top-down methods. In this review we focus on another top-down generic technology, namely nanostructuring by charged particle beams used to expose a resist, which can be used as a mask for pattern transfer etching and metal deposition etc. Nanolithography using charged particle
  • [36] and this was chosen for scanning He+ ion beam lithography (SHIBL) experiments. In order to enable sub-10 nm patterning, an ultra-thin resist film, with small molecules is required. High-fidelity pattern transfer via plasma etching requires high carbon content in the resist, with as many of the
PDF
Album
Review
Published 14 Nov 2018

Controlling surface morphology and sensitivity of granular and porous silver films for surface-enhanced Raman scattering, SERS

  • Sherif Okeil and
  • Jörg J. Schneider

Beilstein J. Nanotechnol. 2018, 9, 2813–2831, doi:10.3762/bjnano.9.263

Graphical Abstract
  • silver electrodes. This is the most widely studied synthesis and is still subject to further investigation and optimization to obtain more efficient SERS substrates [2][8][9][10][11]. One modification of the electrochemical fabrication of SERS substrates involves the electrochemical etching of silver to
  • . Etching of silver films by means of hydrogen plasma in an inductively coupled plasma system has also been previously observed and the reasons for this etching could be ion bombardment leading to physical sputtering together with chemical etching for which the formation of a silver dihydride anion (AgH2
  • −) as etching product has been suggested as it is more stable than silver hydride [78]. As can be seen in the top SEM images (Figure 2a–c) and in the cross-sectional SEM images (Figure 2d) holes are formed in the silver film, which increase in size and depth with increasing hydrogen plasma treatment
PDF
Album
Supp Info
Full Research Paper
Published 07 Nov 2018

Low cost tips for tip-enhanced Raman spectroscopy fabricated by two-step electrochemical etching of 125 µm diameter gold wires

  • Antonino Foti,
  • Francesco Barreca,
  • Enza Fazio,
  • Cristiano D’Andrea,
  • Paolo Matteini,
  • Onofrio Maria Maragò and
  • Pietro Giuseppe Gucciardi

Beilstein J. Nanotechnol. 2018, 9, 2718–2729, doi:10.3762/bjnano.9.254

Graphical Abstract
  • spectroscopy (TERS) has become a well-applied technique for nanospectroscopy, allowing for single molecule sensitivity with sub-nanometer spatial resolution. The demand for efficient, reproducible and cost-effective probes for TERS is increasing. Here we report on a new electrochemical etching protocol to
  • fabricate TERS tips starting from 125 µm diameter gold wires in a reproducible way. The process is reliable (50% of the tips have radius of curvature <35 nm, 66% <80 nm), fast (less than 2 min) and 2.5 times cheaper than the etching of standard 250 µm diameter wires. The TERS performance of the tips is
  • tip [29][30]. TERS tips are nowadays produced by the chemical/electrochemical etching of metal wires [31][32][33][34][35], metal coatings of AFM tips [36][37][38], electroless deposition, [39] galvanic displacement [40] or by advanced nanostructuration techniques such as electron beam induced
PDF
Album
Supp Info
Full Research Paper
Published 22 Oct 2018

Optimization of Mo/Cr bilayer back contacts for thin-film solar cells

  • Nima Khoshsirat,
  • Fawad Ali,
  • Vincent Tiing Tiong,
  • Mojtaba Amjadipour,
  • Hongxia Wang,
  • Mahnaz Shafiei and
  • Nunzio Motta

Beilstein J. Nanotechnol. 2018, 9, 2700–2707, doi:10.3762/bjnano.9.252

Graphical Abstract
  • regions were acquired with 10 eV pass energy and about 0.4 eV spectral resolution to discriminate the substructure of the spectral lines. Ar+ ion cluster etching was employed for XPS depth profiling and the calibration was carried out using a typical Mo on glass sample with sputtering rate of 15.5 nm/s
  • any Cr or Na signal in the Mo layer, by etching the film via argon gas cluster ions for 4 min before each XPS acquisition until the signal from the substrate was visible. The result is shown in Figure 7 for a Mo/Cr film deposited at 200 W and 3 mTorr (high-resolution spectra of Mo 3d and Cr 2p are
PDF
Album
Supp Info
Full Research Paper
Published 18 Oct 2018

Impact of the anodization time on the photocatalytic activity of TiO2 nanotubes

  • Jesús A. Díaz-Real,
  • Geyla C. Dubed-Bandomo,
  • Juan Galindo-de-la-Rosa,
  • Luis G. Arriaga,
  • Janet Ledesma-García and
  • Nicolas Alonso-Vante

Beilstein J. Nanotechnol. 2018, 9, 2628–2643, doi:10.3762/bjnano.9.244

Graphical Abstract
  • , high specific surface area, high mass-transport rate, and remarkable light-harvesting properties [17][18]. Generally, the electrochemical anodization process implies that the anodic polarization of a mechanically/chemically prepared Ti sheet induces the growth of TNTs using an etching agent (typically
  • area of the TNTs. However, the physicochemical and the photoelectronic properties of the TNTs were not considered in their work. For example, the well-documented etching effect of the F− ions was not considered. Herein, we prepared TNTs by anodization in a typical ethylene glycol-based electrolyte and
  • . Fluorinated structures show physical modification (e.g., thinning of outer and inner diameter) via chemical etching through the fluoride ions dissolving the oxide (TiO2 + 6F− + 4H+ → [TiF6]2− + 2H2O). This change in the surface geometry is accompanied by a modification of the surface composition and is
PDF
Album
Supp Info
Full Research Paper
Published 04 Oct 2018

Friction reduction through biologically inspired scale-like laser surface textures

  • Johannes Schneider,
  • Vergil Djamiykov and
  • Christian Greiner

Beilstein J. Nanotechnol. 2018, 9, 2561–2572, doi:10.3762/bjnano.9.238

Graphical Abstract
  • approaches to realize such textured surfaces, such as chemical etching [12] or material indentation [13], the use of lasers is established as the most versatile and economical method [14]. The most common texturing element is the round dimple [10][14], with which friction reduction of around 80% has been
PDF
Album
Supp Info
Full Research Paper
Published 26 Sep 2018

ZnO-nanostructure-based electrochemical sensor: Effect of nanostructure morphology on the sensing of heavy metal ions

  • Marina Krasovska,
  • Vjaceslavs Gerbreders,
  • Irena Mihailova,
  • Andrejs Ogurcovs,
  • Eriks Sledevskis,
  • Andrejs Gerbreders and
  • Pavels Sarajevs

Beilstein J. Nanotechnol. 2018, 9, 2421–2431, doi:10.3762/bjnano.9.227

Graphical Abstract
  • . The sample was then removed from the solution, rinsed several times with distilled water and thermally treated at 90–110 °C for 30 min in order to remove the adsorbed water. For more detailed information see [17][18]. ZnO nanotube arrays were obtained using a self-selective etching method based on
  • of nanorods: equimolar aqueous solution of 0.1 M Zn(NO3)2 + 0.1 M C6H12N4. The growth process was divided into two stages: growth of ZnO nanorods at 90 °C for three hours, and selective etching of ZnO nanorods at 50 °C for eighteen hours. After the growth process, the samples were rinsed several
  • a high degree of crystallinity. In the case of the nanotubes, the intensity of the peak corresponding to the (002) plane is about four times lower than in the case of nanorods, indicating good efficiency of metastable plane etching. The EDS spectrum confirms that the as-synthesized samples are
PDF
Album
Full Research Paper
Published 11 Sep 2018

High-throughput micro-nanostructuring by microdroplet inkjet printing

  • Hendrikje R. Neumann and
  • Christine Selhuber-Unkel

Beilstein J. Nanotechnol. 2018, 9, 2372–2380, doi:10.3762/bjnano.9.222

Graphical Abstract
  • Ar/H2 plasma etching at 300 W for 1 h. An exemplary quasi-hexagon pattern is drawn (yellow) for visualization. (B) Inkjet-printed 4 × 4 droplet pattern after drying and Ar/H2 plasma treatment at 300 W for 1 h. Both images were recorded with SEM. SEM images of size and droplet shape on the five
  • different materials (A–E) and nanodot distribution after Ar/H2 plasma etching in the center of each droplet (A1−E1). The substrates are: (A) poly-silicon, (B) amorphous silicon of 200 nm thickness on poly-silicon, (C) amorphous silicon of 400 nm thickness on poly-silicon, (D) 50 µm thick free-standing
PDF
Album
Full Research Paper
Published 04 Sep 2018

Magnetism and magnetoresistance of single Ni–Cu alloy nanowires

  • Andreea Costas,
  • Camelia Florica,
  • Elena Matei,
  • Maria Eugenia Toimil-Molares,
  • Ionel Stavarache,
  • Andrei Kuncser,
  • Victor Kuncser and
  • Ionut Enculescu

Beilstein J. Nanotechnol. 2018, 9, 2345–2355, doi:10.3762/bjnano.9.219

Graphical Abstract
  • . The templates used were nanoporous polycarbonate membranes with a thickness of 30 µm, a density of 109 pores·cm−1 and a pore diameter of 130 nm. Chemical etching of the pores was performed by immersing the irradiated polycarbonate foils in an aqueous solution of 5 M NaOH and 10 vol % methanol at a
PDF
Album
Supp Info
Full Research Paper
Published 30 Aug 2018

Block copolymers for designing nanostructured porous coatings

  • Roberto Nisticò

Beilstein J. Nanotechnol. 2018, 9, 2332–2344, doi:10.3762/bjnano.9.218

Graphical Abstract
  • increasing molecular weight, the interfacial area per block junction increases, inducing parallel folding (the most thermodynamically stable form) [87]. The removal of the sacrificial component (SC) to obtain the final polymeric porous material can be performed using various etching procedures, such as
  • case, the selective etching of activated oxygen molecules generated by the VUV radiation towards the two blocks (PS and PMMA) allowed for the preferential decomposition of PMMA and the consequent formation of a PS nanoporous network. The modulation of the irradiation time and pressure caused chemical
  • PS-b-PEO copolymers, Mao et al. [59] demonstrated that the chemical etching of the minority component leads to the formation of a well-ordered nanoporous system by selective removal of the PEO domains by simple ether cleavage by washing with aqueous hydrogen iodine. This strong acid was selected for
PDF
Album
Review
Published 29 Aug 2018

Performance analysis of rigorous coupled-wave analysis and its integration in a coupled modeling approach for optical simulation of complete heterojunction silicon solar cells

  • Ziga Lokar,
  • Benjamin Lipovsek,
  • Marko Topic and
  • Janez Krc

Beilstein J. Nanotechnol. 2018, 9, 2315–2329, doi:10.3762/bjnano.9.216

Graphical Abstract
  • into solar cells [1][2][3][4][5]. The use of different techniques for the wet and dry etching of Si wafers [6] in combination with thermal or UV nanoimprint lithography [6][7] has opened new potential for design of (nano)textures with superior antireflection, light scattering and trapping properties
  • textures that are commonly applied in HJ Si solar cells. The first one can be experimentally realized on the nanometer scale by UV nanoimprint lithography (NIL) in combination with dry and wet etching of the wafer [6]. The second, the random pyramid texture, is typically used as a microtexture in c-Si
  • solar cells and can be obtained by wet etching with KOH [36]. In Figure 4 simulated top views and cross-sectional profiles of the two textures are presented, in this case applied to the front part of the analyzed solar cell. The corresponding front thin layers are indicated by different colors. In
PDF
Album
Full Research Paper
Published 28 Aug 2018

Metal–dielectric hybrid nanoantennas for efficient frequency conversion at the anapole mode

  • Valerio F. Gili,
  • Lavinia Ghirardini,
  • Davide Rocco,
  • Giuseppe Marino,
  • Ivan Favero,
  • Iännis Roland,
  • Giovanni Pellegrini,
  • Lamberto Duò,
  • Marco Finazzi,
  • Luca Carletti,
  • Andrea Locatelli,
  • Aristide Lemaître,
  • Dragomir Neshev,
  • Costantino De Angelis,
  • Giuseppe Leo and
  • Michele Celebrano

Beilstein J. Nanotechnol. 2018, 9, 2306–2314, doi:10.3762/bjnano.9.215

Graphical Abstract
  • patterns are transferred on the resist with a second lithography step. Two non-selective etching processes are then performed: a first CHF3-mediated reactive ion etching (RIE) removes the 3 nm SiOx layer which is no longer needed, while the second inductively coupled plasma RIE with SiCl4/Ar gas treatment
PDF
Album
Full Research Paper
Published 27 Aug 2018

Two-dimensional photonic crystals increasing vertical light emission from Si nanocrystal-rich thin layers

  • Lukáš Ondič,
  • Marian Varga,
  • Ivan Pelant,
  • Alexander Kromka,
  • Karel Hruška and
  • Robert G. Elliman

Beilstein J. Nanotechnol. 2018, 9, 2287–2296, doi:10.3762/bjnano.9.213

Graphical Abstract
  • with etching [14] or focused ion beam milling [15] are used to prepare photonic structures with well-defined dimensions on small areas. These approaches are therefore suitable for laboratory testings but not for practice. This issue was recently solved by developing large-scale production techniques
  • ” by electron beam lithography (“e-LiNE system”, Raith GmbH, Germany) into a polymer mask forming a 2D periodic patterns of holes. A 60 nm thick gold layer was subsequently evaporated and part of the gold was removed by lift-off of the PMMA to define a mask for etching. Afterwards, the samples were
  • always six PhCs) was etched for a given time. Depending on the sample, the heights of the columns after the etching were (i) hPhC1 ≈ 150 nm, (ii) hPhC2 ≈ 380 nm and (iii) hPhC3 ≈ 500 nm. The heights of the columns within each series of the PhC samples varies slightly (±15 nm) due to differences in the
PDF
Album
Supp Info
Full Research Paper
Published 24 Aug 2018

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating

  • Dirk König,
  • Daniel Hiller,
  • Noël Wilck,
  • Birger Berghoff,
  • Merlin Müller,
  • Sangeeta Thakur,
  • Giovanni Di Santo,
  • Luca Petaccia,
  • Joachim Mayer,
  • Sean Smith and
  • Joachim Knoch

Beilstein J. Nanotechnol. 2018, 9, 2255–2264, doi:10.3762/bjnano.9.210

Graphical Abstract
  • for 1 h. A 4.5 nm thick Si3N4 spacer layer served to suppress excited electrons from the Si wafer to interfere with electrons from the Si-NWell during UPS. Samples comprising a SiO2-embedded NWell were processed by etching the top c-Si layer of an Si-on-insulator (SOI) wafer with 200 nm buried SiO2
  • (BOX) down to ca. 3 nm. The subsequent oxidation resulted in a 1.7 nm Si-NWell and 1.5 nm SiO2 capping. Si reference samples were processed by etching a 5 to 15 × 10−3 Ω cm Sb-doped n-type (111)-Si wafer in buffered hydrofluoric acid, and the sample was immediately mounted under a N2-shower then
  • swiftly loaded into the ultrahigh vacuum (UHV) annealing chamber. All NWell samples were contacted via a lateral metal contact frame on the front surface which was processed by photolithographical structuring, wet-chemical mesa etching and thermal evaporation of Al. The reference Si-wafer was contacted
PDF
Album
Supp Info
Full Research Paper
Published 23 Aug 2018

Optimization of the optical coupling in nanowire-based integrated photonic platforms by FDTD simulation

  • Nan Guan,
  • Andrey Babichev,
  • Martin Foldyna,
  • Dmitry Denisov,
  • François H. Julien and
  • Maria Tchernycheva

Beilstein J. Nanotechnol. 2018, 9, 2248–2254, doi:10.3762/bjnano.9.209

Graphical Abstract
  • etching after the metallic contact deposition without any damage of the device, and the SiNx waveguide can be fabricated after this etching step. Taking into account that the Si substrate is strongly absorbing at 400 nm, a simulation with different thicknesses of the SiO2 layer was done to evaluate the
PDF
Album
Supp Info
Full Research Paper
Published 22 Aug 2018

Electrospun one-dimensional nanostructures: a new horizon for gas sensing materials

  • Muhammad Imran,
  • Nunzio Motta and
  • Mahnaz Shafiei

Beilstein J. Nanotechnol. 2018, 9, 2128–2170, doi:10.3762/bjnano.9.202

Graphical Abstract
  • fabrication strategy for synthesis of SnO2 NFs with a branch-on-stem morphology using electrospinning, oxygen plasma etching, sputtering and annealing. Electrospun PVP NFs were first etched with oxygen plasma to make a hierarchical template. Afterwards, a SnO2 film is deposited by sputtering and the PVP
PDF
Album
Supp Info
Review
Published 13 Aug 2018

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

  • Noel Kennedy,
  • Ray Duffy,
  • Luke Eaton,
  • Dan O’Connell,
  • Scott Monaghan,
  • Shane Garvey,
  • James Connolly,
  • Chris Hatem,
  • Justin D. Holmes and
  • Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

Graphical Abstract
  • community. Planar, fully depleted SOI (FD-SOI) has been used to provide a more cost-effective scaling mechanism than FinFET alternatives. Although initial wafer cost is higher for SOI compared to bulk silicon, which is used in finFETs, the further masking and etching required for fin production is both
  • SOI samples were prepared and MLD-doped through the methods outlined in the Experimental section. ECV was not applicable to analyse active carrier concentrations present in these samples due to their inability to etch. When etching n-type doped semiconductors, ECV requires the application of a voltage
  • to draw holes to the surface and enable the dissolution of the semiconductor into the electrolyte. Applying this voltage near the insulator layer becomes problematic and prevents etching and analysis in this region. Hall effect measurements were instead used, which required careful handling during
PDF
Album
Supp Info
Full Research Paper
Published 06 Aug 2018

Localized photodeposition of catalysts using nanophotonic resonances in silicon photocathodes

  • Evgenia Kontoleta,
  • Sven H. C. Askes,
  • Lai-Hung Lai and
  • Erik C. Garnett

Beilstein J. Nanotechnol. 2018, 9, 2097–2105, doi:10.3762/bjnano.9.198

Graphical Abstract
  • density distribution of the photogenerated carriers within the silicon nanostructures. Results and Discussion Fabrication of silicon nanostructures and calculation of their optical modes Silicon nanostructures were fabricated by etching a p-type silicon substrate using a combination of Cl2 and HBr/O2
  • forward power 40 W, 7 mTorr) was used for removal of the native oxide and then HBr/O2 (5 min for nanocones and 11 min for nanowires and inverted nanocones, HF forward power 30 W, 7 mTorr) was used for etching the silicon to the desired structures. Before the etching steps an oxygen cleaning step was used
  • (1 min and 30 sec, 50 sccm O2, HF forward power 60 W, ICP forward power 100 W, 6 mTorr). The temperature used for all the steps of the plasma etching was 20 °C. The ratio of HBr/O2 was very crucial for the control of the shape of the silicon structures. For the nanocones a ratio of 48.2:1.8 sccm (HBr
PDF
Album
Supp Info
Full Research Paper
Published 03 Aug 2018

High-throughput synthesis of modified Fresnel zone plate arrays via ion beam lithography

  • Kahraman Keskinbora,
  • Umut Tunca Sanli,
  • Margarita Baluktsian,
  • Corinne Grévent,
  • Markus Weigand and
  • Gisela Schütz

Beilstein J. Nanotechnol. 2018, 9, 2049–2056, doi:10.3762/bjnano.9.194

Graphical Abstract
  • alternative FZP fabrication techniques gained some attraction thanks to the improvements in layer deposition [15][16][17][18][19][20][21][22][23][24][25], etching methods [26], and fabrication methods based on focused ion beams [18][21][27][28][29][30][31]. One particular implementation of focused ion beams
PDF
Album
Supp Info
Full Research Paper
Published 25 Jul 2018
Other Beilstein-Institut Open Science Activities