Investigation of Hf/Ti bilayers for the development of transition-edge sensor microcalorimeters

• Victoria Y. Safonova,
• Anna V. Gordeeva,
• Anton V. Blagodatkin,
• Dmitry A. Pimanov,
• Anton A. Yablokov and
• Andrey L. Pankratov

Beilstein J. Nanotechnol. 2024, 15, 1353–1361, doi:10.3762/bjnano.15.108

• in different transition temperatures at heating and cooling. The presumed reason is the heating of the film sample C1 through the measuring pogo pin contacts made of gold-coated brass and the contact resistance between the contacts and the film. Samples A1–A4 and B1 were measured through the same

Bolometric IR photoresponse based on a 3D micro-nano integrated CNT architecture

• Yasameen Al-Mafrachi,
• Sandeep Yadav,
• Sascha Preu,
• Jörg J. Schneider and
• Oktay Yilmazoglu

Beilstein J. Nanotechnol. 2024, 15, 1030–1040, doi:10.3762/bjnano.15.84

• had an additional parasitic contact resistance to the M-shaped CNT block. Sample 2 in b with whisker contacts was used to reduce the parasitic series resistance, increase the responsivity, and reduce the noise. Therefore, configuration 2 showed the true performance of the original M-shaped CNT block

• 40.6 and 16.6 μV, respectively. They were almost constant at chopper frequencies ≥60 Hz. The calculated NEP values for sample 1 and sample 2 were 3.12 and 0.55 μW·Hz−0.5, respectively. The decreased contact resistance in sample 2 with direct Au whisker contacts resulted in lower noise values

• , indicating the importance of the final contact resistance. Discussion Several CNT architectures (pristine or in composites) have shown photoelectric or bolometric effects [20][21]. Our new bolometers with both configurations were compared to state-of-the-art bolometer architectures with aligned and pristine

Impact of device design on the electronic and optoelectronic properties of integrated Ru-terpyridine complexes

• Max Mennicken,
• Sophia Katharina Peter,
• Corinna Kaulen,
• Ulrich Simon and
• Silvia Karthäuser

Beilstein J. Nanotechnol. 2022, 13, 219–229, doi:10.3762/bjnano.13.16

• overcome for hopping conductance. Furthermore, EA corresponding to ΔEH points to hole conduction through the energetically accessible HOMO of Ru(TP)2-complexes, as also discussed in [31][32]. In practical nanowire devices other contributions such as an additional contact resistance or an activation energy

Chemical vapor deposition of germanium-rich CrGe_x nanowires

• Vladislav Dřínek,
• Stanislav Tiagulskyi,
• Roman Yatskiv,
• Jan Grym,
• Radek Fajgar,
• Věra Jandová,
• Martin Koštejn and
• Jaroslav Kupčík

Beilstein J. Nanotechnol. 2021, 12, 1365–1371, doi:10.3762/bjnano.12.100

• directly contact an as-grown single NW was developed. This method allowed us to measure the conductivity between the molybdenum substrate and the point of contact of the tungsten tip with the NW. To limit the contact resistance between the tungsten tip and the NW, the tip was soldered to the NW with a

Solution combustion synthesis of a nanometer-scale Co₃O₄ anode material for Li-ion batteries

• Monika Michalska,
• Huajun Xu,
• Qingmin Shan,
• Shiqiang Zhang,
• Yohan Dall'Agnese,
• Yu Gao,
• Amrita Jain and
• Marcin Krajewski

Beilstein J. Nanotechnol. 2021, 12, 424–431, doi:10.3762/bjnano.12.34

• represent the charge transfer at the electrode–electrolyte interface (Rct) and the Warburg impedance (W), respectively. The semicircle at high frequencies is mainly attributed to SEI resistance (RSEI) and contact resistance (Rf) [13][15][20][21][25][38]. At this point, it should be also mentioned that the

• circuit corresponding to the electrochemical impedance spectroscopy (EIS) measurements for the cell (a) before cycling, and (b) after cycling; Rf – contact resistance, RSEI – the solid–electrolyte interface (SEI) resistance, CSEI – the surface capacitance, Rct – the charge transfer resistance at the

Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy

• Rosine Coq Germanicus,
• Peter De Wolf,
• Florent Lallemand,
• Catherine Bunel,
• Serge Bardy,
• Hugues Murray and
• Ulrike Lüders

Beilstein J. Nanotechnol. 2020, 11, 1764–1775, doi:10.3762/bjnano.11.159

• the back-contact resistance [11], is experimentally determined. Therefore, at a fixed applied bias, the SSRM measurements map the variation in concentration of mobile majority carriers in doped semiconductors. A high load on the tip is required to obtain the spreading resistance. In fact, for silicon

Seebeck coefficient of silicon nanowire forests doped by thermal diffusion

• Shaimaa Elyamny,
• Elisabetta Dimaggio and
• Giovanni Pennelli

Beilstein J. Nanotechnol. 2020, 11, 1707–1713, doi:10.3762/bjnano.11.153

• thermal contact resistance. Results and Discussion Figure 3 shows the measured voltage drop as a function of the temperature difference between the ends of the nanowires, calculated as described above. The slope of the linear fit gives the Seebeck coefficient, reported in the legend of the figure for the

Selective detection of complex gas mixtures using point contacts: concept, method and tools

• Alexander P. Pospelov,
• Victor I. Belan,
• Dmytro O. Harbuz,
• Volodymyr L. Vakula,
• Lyudmila V. Kamarchuk,
• Yuliya V. Volkova and
• Gennadii V. Kamarchuk

Beilstein J. Nanotechnol. 2020, 11, 1631–1643, doi:10.3762/bjnano.11.146

• point-contact resistance. These changes are displayed in the dependencies of the Yanson point contact parameters. In the case of classical Yanson point-contact spectroscopy studies of electron–phonon interaction in metals, the energy-related processes are described by the current–voltage characteristic

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors

• Jakub Jadwiszczak,
• Pierce Maguire,
• Conor P. Cullen,
• Georg S. Duesberg and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

• the deposited metal–semiconductor contact interface. Recent work has shown that irradiation-induced heating of the electrode area can reverse majority carrier polarity in MoTe2 [31], while pre-treatment with a broad-beam argon ion source can decrease the contact resistance of Ni-MoS2 two-fold [32]. In

• -probe geometry. Thus, the absolute values of μ extracted here (approx. 1 cm2 V−1 s−1) are limited by the contact resistance between the gold and the MoS2 [40]. We now consider the effect of irradiating the metal–semiconductor interface. We treated two FETs within each IR regime. For one of the devices

Electromigration-induced directional steps towards the formation of single atomic Ag contacts

• Atasi Chatterjee,
• Christoph Tegenkamp and
• Herbert Pfnür

Beilstein J. Nanotechnol. 2020, 11, 680–687, doi:10.3762/bjnano.11.55

• formation of ultrasmall interconnects or contacts of atomic size [5]. The latter topic is particularly challenging, since the exact value of the quantized contact resistance depends explicitly not only on the materials used and their valency [5][6], but also on the shape of the contact [5]. This is the

• the reason for this morphological behaviour. Since EM mainly occurs at the grain boundaries, the contact resistance between various grains has a comparable value due to similar sizes of grains and contact areas. Thus, a complicated parallel EM process involving many grains sets in. Material exchange

Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

• Botond Sánta,
• Dániel Molnár,
• Patrick Haiber,
• Agnes Gubicza,
• Edit Szilágyi,
• Zsolt Zolnai,
• András Halbritter and
• Miklós Csontos

Beilstein J. Nanotechnol. 2020, 11, 92–100, doi:10.3762/bjnano.11.9

• former. Preset contact resistance values of a few kiloohms were achieved by employing a current-controlled feedback loop. The first few periods of subsequent I(V) measurements were dominated by unstable, non-memristive curves, attributed to the initial formation of the metallic filament. They were

Mobility of charge carriers in self-assembled monolayers

• Zhihua Fu,
• Tatjana Ladnorg,
• Hartmut Gliemann,
• Alexander Welle,
• Asif Bashir,
• Michael Rohwerder,
• Qiang Zhang,
• Björn Schüpbach,
• Andreas Terfort and
• Christof Wöll

Beilstein J. Nanotechnol. 2019, 10, 2449–2458, doi:10.3762/bjnano.10.235

• publications [28]. Under the assumption that the contact resistance between the AFM tip and the PAT molecule or the PAT island is so small that it can be neglected, the resistance is only due to the molecular resistance Rmol of the thiolate itself. While adjacent HDT molecules do not contribute to the overall

Remarkable electronic and optical anisotropy of layered 1T’-WTe₂ 2D materials

• Qiankun Zhang,
• Rongjie Zhang,
• Jiancui Chen,
• Wanfu Shen,
• Chunhua An,
• Xiaodong Hu,
• Mingli Dong,
• Jing Liu and
• Lianqing Zhu

Beilstein J. Nanotechnol. 2019, 10, 1745–1753, doi:10.3762/bjnano.10.170

• contact resistance: 1) samples with uniform thickness were selected for device fabrication under the microscope; 2) a constant angular velocity (10 rpm) was kept when we evaporated electrodes onto the samples. To perform the angle-resolved DC conductance measurements, a fixed electrode was chosen and

Nanoscale spatial mapping of mechanical properties through dynamic atomic force microscopy

• Zahra Abooalizadeh,
• Leszek Josef Sudak and
• Philip Egberts

Beilstein J. Nanotechnol. 2019, 10, 1332–1347, doi:10.3762/bjnano.10.132

•  1c), and tip D (Figure 1d) in the corresponding acquired AFM images within this manuscript. In all cases, the tip radius was observed to vary between 5–25 nm following all experiments. Contact resistance (CR) AFM experiment The first set of experiments on the HOPG surface were conducted in

Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble

• David van Treeck,
• Johannes Ledig,
• Gregor Scholz,
• Jonas Lähnemann,
• Mattia Musolino,
• Abbes Tahraoui,
• Oliver Brandt,
• Andreas Waag,
• Henning Riechert and
• Lutz Geelhaar

Beilstein J. Nanotechnol. 2019, 10, 1177–1187, doi:10.3762/bjnano.10.117

• -Si interface RGaN/Si, the contact resistance Rc between p-GaN and the tungsten probe and the resistance of the NW LED RNW itself. The contributions of the n-Si substrate and the measurement setup were determined to be in the range of a few ohms and therefore can be neglected for our considerations

• , no absolute values for the EQE could be determined. Furthermore, for a given externally imposed driving current, we can assume that the influence of any high contact resistance between probe tip and NW LED on the integrated EL and hence the relative EQE is negligible. In Figure 6 the integrated EL

• with ITO a homogeneous p-type contact can be achieved throughout the whole device. This was not the case for the Ni/Au top contact, for which the contact resistance varied significantly across the sample. Considering the EQE characteristics of a device, such a pronounced variation leads to a rather

A porous 3D-RGO@MWCNT hybrid material as Li–S battery cathode

• Yongguang Zhang,
• Jun Ren,
• Yan Zhao,
• Taizhe Tan,
• Fuxing Yin and
• Yichao Wang

Beilstein J. Nanotechnol. 2019, 10, 514–521, doi:10.3762/bjnano.10.52

• region the x-intercept is attributed to the contact resistance (R0), and the semicircle is attributed to the charge-transfer resistance (Rct) at the electrode/electrolyte interface. Finally, the inclined slope in the low-frequency region is associated with the Warburg impedance (W) [28], which correlates

• to the Li+ transportation process. Notably, there is a significant shift in the impedance curves before and after cycling. The primary reason for the decrease in the contact resistance after the initial cycle may be the redispersion of sulfur. The significant shift in the Warburg element indicates an

Temperature-dependent Raman spectroscopy and sensor applications of PtSe₂ nanosheets synthesized by wet chemistry

• Mahendra S. Pawar and
• Dattatray J. Late

Beilstein J. Nanotechnol. 2019, 10, 467–474, doi:10.3762/bjnano.10.46

• annealed in a vacuum furnace at 170 °C to improve the contact resistance and adhesion of the nanosheets with the substrate. The humidity sensing performance was investigated by exposing the sensor device to various relative humidity (RH) levels ranging from 11.3–97.3% as described in detail previously [26

Graphene–graphite hybrid epoxy composites with controllable workability for thermal management

• Idan Levy,
• Eyal Merary Wormser,
• Maxim Varenik,
• Matat Buzaglo,
• Roey Nadiv and
• Oren Regev

Beilstein J. Nanotechnol. 2019, 10, 95–104, doi:10.3762/bjnano.10.9

• materials tailored to facilitate efficient thermal management. The design of such materials may be based on the loading of thermally conductive fillers into the polymer matrix applied – as a thermal interface material – on the interface between two surfaces to reduce contact resistance. On the one hand

• conductivity and minimal contact resistance between the heat source and the cooling device. Directly adjoining the coarse surfaces of the heat source and the cooling device will generally result in poor contact and entrapment of thermally insulating air. To address this problem, a thermal interface material

• (TIM) [3] is applied at the interface between the two surfaces to reduce the contact resistance. Commonly used types of TIM [4][5][6] include thermal greases and pastes, solder, phase-change materials [7] and, very often, filled-polymer adhesives, which are usually epoxy-based [5][8][9][10][11][12

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si_1−xGe_x and Si layers

• Richard Daubriac,
• Emmanuel Scheid,
• Hiba Rizk,
• Richard Monflier,
• Sylvain Joblot,
• Rémi Beneyton,
• Pablo Acosta Alba,
• Sébastien Kerdilès and
• Filadelfo Cristiano

Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

• mobility; contact resistance; differential Hall effect; dopant activation; fully depleted silicon on insulator (FDSOI); laser annealing; sub-nanometre resolution; Introduction The research efforts made throughout the last decades have made it possible to keep the momentum for a continuous miniaturization

• TriGate FinFETs [2] to gate-all-around NWFETs [3] and monolithic 3D CoolCube technology [4]. Despite their differences, some technological issues have emerged as a significant challenge for all of them, such as the need to reduce the contact resistance at the silicide/source–drain interface [5]. The

• measurement techniques previously developed for dopant profiling. However, in the case of contact resistance optimisation, only the dopant concentration close to the surface is relevant, i.e., within the first few nanometres, while the SOI/SiGeOI substrates used in current technologies are extremely thin (top

Electrical characterization of single nanometer-wide Si fins in dense arrays

• Steven Folkersma,
• Janusz Bogdanowicz,
• Andreas Schulze,
• Paola Favia,
• Dirch H. Petersen,
• Ole Hansen,
• Henrik H. Henrichsen,
• Peter F. Nielsen,
• Lior Shiv and
• Wilfried Vandervorst

Beilstein J. Nanotechnol. 2018, 9, 1863–1867, doi:10.3762/bjnano.9.178

• is observed that the magnitude of Ipulse must be chosen larger than a certain threshold current (Ithreshold, typically >100 µA for blanket materials) in order to reduce the contact resistance RC between the electrodes and the sample and hence activate the required electrical contact. The given

• contact size and the contact resistance for each electrode–fin contact are, respectively, indicated by dcontact and RCj (j = 1, 2,…, 8). Note that all contact resistances are initially considered to be highly resistive because the native oxides present on both the fins and electrodes prevent current flow

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

• Liga Jasulaneca,
• Jelena Kosmaca,
• Raimonds Meija,
• Jana Andzane and
• Donats Erts

Beilstein J. Nanotechnol. 2018, 9, 271–300, doi:10.3762/bjnano.9.29

• contacting materials (metal–metal, metal–semiconductor, and semiconductor–semiconductor) always results in the formation of a tunnel barrier in the contact. In the presence of a potential barrier between the contacting NEM switch materials, the magnitude of the contact resistance depends on the width and

• transfer results in an increase of adhesion in the contact and also makes the surfaces rougher, thus increasing resistance in the contact. For self-mated contacts, for example, in an all-molybdenum switch, material transfer was reported to be a possible cause for the observed contact resistance rise after

• prototypes [9][10][11][13][14]. It was found that the presence of a native oxide layer on Si and Ge nanostructures implies some limitation on NEM switch operation at low voltages due to the high contact resistance expressed in low on/off ratio [9] and non-conductive gap below 2–4 V [10][13][54]. On the other

Combined scanning probe electronic and thermal characterization of an indium arsenide nanowire

• Tino Wagner,
• Fabian Menges,
• Heike Riel,
• Bernd Gotsmann and
• Andreas Stemmer

Beilstein J. Nanotechnol. 2018, 9, 129–136, doi:10.3762/bjnano.9.15

• . Keywords: contact resistance; Kelvin probe force microscopy (KFM); nanowire; scanning thermal microscopy (SThM); self-heating; Introduction Electronic and thermal properties of nanoscale devices are innately coupled. The charge carriers in most conductors release energy by scattering at defects or phonons

• traced by KFM. The voltage drop at interfaces to electrodes directly translates to the contact resistance, allowing one to separate contact and channel resistances. Thereby contact resistance values can be extracted even from small samples, for which four-probe methods or transmission-line methods cannot

• measurements. Whereas the nanowire potential is symmetric around 0 μA near the left contact, we observe a pronounced asymmetry at the transition from the nanowire to the electrode on the right hand side. This indicates that the contact resistance here depends on polarity, hinting at the formation of a Schottky

Review on optofluidic microreactors for artificial photosynthesis

• Xiaowen Huang,
• Jianchun Wang,
• Tenghao Li,
• Jianmei Wang,
• Min Xu,
• Weixing Yu,
• Abdel El Abed and
• Xuming Zhang

Beilstein J. Nanotechnol. 2018, 9, 30–41, doi:10.3762/bjnano.9.5

• electrons and holes. In another design, the A/D pair is replaced by the conductor (C) to form the PS-C-PS system, as shown in Figure 3C. The inserted conductor acts as the electron mediator and forms the ohmic contact with low contact resistance between PS II and PS I. Through the ohmic contact, the

One-step chemical vapor deposition synthesis and supercapacitor performance of nitrogen-doped porous carbon–carbon nanotube hybrids

• Egor V. Lobiak,
• Lyubov G. Bulusheva,
• Ekaterina O. Fedorovskaya,
• Yury V. Shubin,
• Pavel E. Plyusnin,
• Pierre Lonchambon,
• Boris V. Senkovskiy,
• Zinfer R. Ismagilov,
• Emmanuel Flahaut and
• Alexander V. Okotrub

Beilstein J. Nanotechnol. 2017, 8, 2669–2679, doi:10.3762/bjnano.8.267

• ]. Electrochemical tests of the obtained materials in 6 M KOH electrolyte evidenced a significant reduction of the interfacial contact resistance of the electrode with the insertion of MWCNTs. Luo et al. have prepared a hierarchical porous carbon–MWCNT hybrid by carbonization of a mixture of phenolic resin and

Substrate and Mg doping effects in GaAs nanowires

• Perumal Kannappan,
• Nabiha Ben Sedrine,
• Jennifer P. Teixeira,
• Maria R. Soares,
• Bruno P. Falcão,
• Maria R. Correia,
• Nestor Cifuentes,
• Emilson R. Viana,
• Marcus V. B. Moreira,
• Geraldo M. Ribeiro,
• Alfredo G. de Oliveira,
• Juan C. González and
• Joaquim P. Leitão

Beilstein J. Nanotechnol. 2017, 8, 2126–2138, doi:10.3762/bjnano.8.212

• μm on individual nanowires. Following this procedure, ohmic contacts with acceptable low contact resistance are obtained [19]. Figure 1a presents an optical image of a FET in which the nanowire and electrical contacts are observed. The TEM image at the bottom of Figure 1a shows the typical morphology