Bolometric IR photoresponse based on a 3D micro-nano integrated CNT architecture

• Yasameen Al-Mafrachi,
• Sandeep Yadav,
• Sascha Preu,
• Jörg J. Schneider and
• Oktay Yilmazoglu

Beilstein J. Nanotechnol. 2024, 15, 1030–1040, doi:10.3762/bjnano.15.84

• 600 nm thick thermally oxidized SiO2 layer. The wafer was p-type and lightly boron-doped (Si-Mat, Silicon Materials). The substrate was thoroughly cleaned to remove impurities and contaminants to provide an ideal condition for CNT growth. Subsequently, an essential 30 nm aluminum oxide (AlOx) layer

Entry of nanoparticles into cells and tissues: status and challenges

• Kirsten Sandvig,
• Tore Geir Iversen and
• Tore Skotland

Beilstein J. Nanotechnol. 2024, 15, 1017–1029, doi:10.3762/bjnano.15.83

• , exposure to various types of NPs (Au, Ag, SiO2, and Fe3O4) was found to change the content of EV-containing miRNAs [72]. It is important to understand the mechanisms involved to analyze exosome markers with and without incubation with NPs. Nanoparticles under development for drug delivery are made from

Recent progress on field-effect transistor-based biosensors: device perspective

• Billel Smaani,
• Fares Nafa,
• Mohamed Salah Benlatrech,
• Ismahan Mahdi,
• Hamza Akroum,
• Mohamed walid Azizi,
• Khaled Harrar and
• Sayan Kanungo

Beilstein J. Nanotechnol. 2024, 15, 977–994, doi:10.3762/bjnano.15.80

• . Figure 7 shows the 3D representation of an SRG JL FET-based biosensor. One type of doping concentration was added to the silicon channel, source, and drain region. A surrounding cavity was created between the oxide and the gate metal. This structure utilizes a silicon-based substrate with SiO2 as an

• ]. This structure uses two surrounding nanogap cavities separated by HfO2 as a high-k dielectric material and SiO2 as an interface layer. It has been reported that this structure offers higher sensitivity compared to that of the dual-material JL MOSFET-biosensor proposed by Ahangari et al. [74] and the

• region. The channel length, the thickness of HfO2, the thickness of SiO2, and the thickness of silicon are 225 nm, 10 nm, 1 nm, and 10 nm, respectively. 2.2.4 Dual-cavity JL MOSFET-based biosensors. Jana et al. [96] reported a dual-cavity double-gate junctionless (DC DG JL) MOSFET-biosensor targeting

A review on the structural characterization of nanomaterials for nano-QSAR models

• Salvador Moncho,
• Eva Serrano-Candelas,
• Jesús Vicente de Julián-Ortiz and
• Rafael Gozalbes

Beilstein J. Nanotechnol. 2024, 15, 854–866, doi:10.3762/bjnano.15.71

• the relevance of their distribution along the molecule. However, the core of the NMs is typically composed by chemicals with a simpler and repetitive chemical structure. Most inorganic materials are composed of single elements (e.g., Au or Ag) or binary compounds (e.g., Fe2O3, CdSe, or SiO2). The most

Intermixing of MoS₂ and WS₂ photocatalysts toward methylene blue photodegradation

• Maryam Al Qaydi,
• Nitul S. Rajput,
• Michael Lejeune,
• Abdellatif Bouchalkha,
• Mimoun El Marssi,
• Steevy Cordette,
• Chaouki Kasmi and
• Mustapha Jouiad

Beilstein J. Nanotechnol. 2024, 15, 817–829, doi:10.3762/bjnano.15.68

• SiO2/Si substrates as detailed elsewhere [27]. The fabricated samples were exfoliated in a mixed solution composed of 10 mL of ethanol, 10 mL acetone, and 10 mL of deionized water under sonication for 30 min as shown in Figure 12. Five to ten substrates loaded with the samples were used to prepare the

Exploring surface charge dynamics: implications for AFM height measurements in 2D materials

• Mario Navarro-Rodriguez,
• Andres M. Somoza and
• Elisa Palacios-Lidon

Beilstein J. Nanotechnol. 2024, 15, 767–780, doi:10.3762/bjnano.15.64

• and/or rGO in Milli-Q type-I water (MQ water) were utilized. A drop of these dispersions was cast onto highly doped p-type silicon (1–10 Ω·cm, Siltronix) with a 300 nm SiO2 layer thermally grown on top. Before deposition, the substrate underwent a thorough cleaning process, which involved rinsing with

• ethanol and MQ water. Subsequently, the substrate was exposed to UV/ozone for 15 min to eliminate organic contaminants and promote the hydrophilicity of the SiO2 surface. GO (Graphenea), was employed without further treatment, while rGO was obtained through chemical reduction using hydrazine hydrate (50

• insulating substrates. In Figure 1, we present a stack of single-layer GO and rGO flakes co-deposited on SiO2, measured under N2 atmosphere (RH < 10%). Distinguishing between GO and rGO flakes based solely on the topography image proves to be challenging, as both materials exhibit similar heights. Therefore

Level set simulation of focused ion beam sputtering of a multilayer substrate

• Alexander V. Rumyantsev,
• Nikolai I. Borgardt,
• Roman L. Volkov and
• Yuri A. Chaplygin

Beilstein J. Nanotechnol. 2024, 15, 733–742, doi:10.3762/bjnano.15.61

• of them is the flux of sputtered particles. For a multilayer structure, it can be presented by the extension of the well-known expression [21] as where denotes the flux of sputtered atoms of the i-th material with i = 1 for SiO2 and i = 2 for Si. In the case considered, it is equal to where μi = [Yr

• between the number of sputtered silicon and oxygen atoms corresponds to the stoichiometry of SiO2. In addition to the direct flux of incident ions , a number of indirect fluxes significantly influences the evolution of the surface [30]. In the following description, we consider the flux of redeposited

• computational grid. The experimental angular dependences of the sputtering yield [24] and YSi(θ) [34] were used for the calculations of Fsp,i with μi values of 0.15 for SiO2 (i =1) [24] and 0.3 for Si (i = 2) [35]. The function at t=0 was specified by the structure of the Si substrate covered by a SiO2 layer

Reduced subthreshold swing in a vertical tunnel FET using a low-work-function live metal strip and a low-k material at the drain

• Kalai Selvi Kanagarajan and
• Dhanalakshmi Krishnan Sadhasivan

Beilstein J. Nanotechnol. 2024, 15, 713–718, doi:10.3762/bjnano.15.59

• research paper, a vertical tunnel field-effect transistor (TFET) structure containing a live metal strip and a material with low dielectric constant is designed, and its performance metrics are analyzed in detail. Low-k SiO2 is incorporated in the channel–drain region. A live molybdenum metal strip with

• minimum subthreshold slope and a good Ion/Ioff ratio. The low-k material at the drain reduces the gate-to-drain capacitance. Both the SiO2 layer and the live metal strip show excellent leakage current reduction to 1.4 × 10−17 A/μm. The design provides a subthreshold swing of 5 mV/decade, which is an

• device. The lifetime of devices is reduced because of leakage currents [1]. Leakage increases when thin SiO2 is used as gate dielectric material. The subthreshold swing (SS) is 60 mV/dec for the thermionic injection of electrons in field-effect transistors (FETs) [2]. In practical implementations, the SS

Elastic modulus of β-Ga₂O₃ nanowires measured by resonance and three-point bending techniques

• Annamarija Trausa,
• Sven Oras,
• Sergei Vlassov,
• Mikk Antsov,
• Tauno Tiirats,
• Andreas Kyritsakis,
• Boris Polyakov and
• Edgars Butanovs

Beilstein J. Nanotechnol. 2024, 15, 704–712, doi:10.3762/bjnano.15.58

• -Ga2O3 NW synthesis methods and detailed post-examination of their mechanical properties before considering their application in future nanoscale devices. Results For structural analysis of the as-grown NW arrays on Si(100)/SiO2 substrates, X-ray diffraction (XRD) measurements were conducted. The marked

• pressure chemical vapour transport in a horizontal quartz tube reactor (18 mm inner diameter) according to the method reported in [2]. The process involved loading a ceramic boat with 0.15 g of Ga2O3 powder (99.99%, Alfa Aesar) at the centre of the quartz tube. Oxidised silicon wafers SiO2/Si (100) coated

• a carrier gas mixture of Ar/H2 5%, maintaining this temperature and flow for 30 min to allow NW growth. Subsequently, the reactor was naturally cooled to room temperature. Ga2O3 NWs, up to 100 μm in length, grew on SiO2/Si substrates downstream in the low-temperature zone maintained around 850–900

On the additive artificial intelligence-based discovery of nanoparticle neurodegenerative disease drug delivery systems

• Shan He,
• Julen Segura Abarrategi,
• Harbil Bediaga,
• Sonia Arrasate and
• Humberto González-Díaz

Beilstein J. Nanotechnol. 2024, 15, 535–555, doi:10.3762/bjnano.15.47

• the type of NP. It appears that metal oxide compounds such as SiO2 and TiO2 along with PEG-Si(OMe)3NP coating for almost all NDDs are likely to be promising for further assays. Double metal oxide compounds such as CoFe2O4 and ZnFe2O4 obtained intermediate probability values p(N2D3Sin)cdj.cnj = 0.17

Heat-induced morphological changes in silver nanowires deposited on a patterned silicon substrate

• Elyad Damerchi,
• Sven Oras,
• Edgars Butanovs,
• Allar Liivlaid,
• Mikk Antsov,
• Boris Polyakov,
• Annamarija Trausa,
• Veronika Zadin,
• Andreas Kyritsakis,
• Loïc Vidal,
• Karine Mougin,
• Siim Pikker and
• Sergei Vlassov

Beilstein J. Nanotechnol. 2024, 15, 435–446, doi:10.3762/bjnano.15.39

• silicon substrates with square holes were prepared from (100) silicon wafers (Semiconductor Wafer, Inc.) with 50 nm thermal oxide in four steps as follows: 1) conventional optical lithography process to produce the desired pattern in a photoresist on the wafer; 2) selective removal of SiO2 using buffered

• HF solution in order to replicate the resist pattern in the oxide layer; 3) silicon etching in tetramethylammonium hydroxide (TMAH) solution at 90 °C to create the etch pits; 4) rinse in HF to remove the remaining SiO2. The resulting substrates had rectangular holes with a side length in the order of

Potential of a deep eutectic solvent in silver nanoparticle fabrication for antibiotic residue detection

• Le Hong Tho,
• Bui Xuan Khuyen,
• Ngoc Xuan Dat Mai and
• Nhu Hoa Thi Tran

Beilstein J. Nanotechnol. 2024, 15, 426–434, doi:10.3762/bjnano.15.38

• , 99%) were purchased from Sigma-Aldrich Co., MO, USA. Urea (CH4N2O, 99%) was obtained from ACS, Reag. Ph Eur, Merck Co., Germany, whereas glycerol (C3H8O3, 99%) was supplied by Daejung Ltd., Korea. ᴅ-glucose (C6H12O6, 99%) was purchased from Fisher Ltd., UK. The microscope glass slides (SiO2, Na2O

Classification and application of metal-based nanoantioxidants in medicine and healthcare

• Nguyen Nhat Nam,
• Nguyen Khoi Song Tran,
• Tan Tai Nguyen,
• Nguyen Ngoc Trai,
• Nguyen Phuong Thuy,
• Hoang Dang Khoa Do,
• Nhu Hoa Thi Tran and
• Kieu The Loan Trinh

Beilstein J. Nanotechnol. 2024, 15, 396–415, doi:10.3762/bjnano.15.36

• acid was covalently grafted on the surface of SiO2 nanoparticles. SiO2 nanoparticles provided thermal stability and chemical inertness while gallic acid provided chain-breaking antioxidant properties. By grafting antioxidant compounds on SiO2 nanoparticles, the deterioration can be decreased [59

• , Kharlamov et al. investigated 180 patients diagnosed with coronary artery disease (CAD). Their findings unveiled a notable regression of coronary atherosclerosis associated with plasmonic photothermal therapy using silica–gold NPs (SiO2-AuNPs) [177]. Metal-based NPs exhibit the ability to scavenge free

• apolipoprotein A-I and facilitates atherosclerosis [190]. Si nanoparticles were reported for their ability to invade the cytoplasm, modify the intracellular microstructure, and promote inflammatory reactions through activating NLRP3 inflammasomes [191]. Also, in an animal experiment, SiO2 nanoparticles induce

On the mechanism of piezoresistance in nanocrystalline graphite

• Sandeep Kumar,
• Simone Dehm and
• Ralph Krupke

Beilstein J. Nanotechnol. 2024, 15, 376–384, doi:10.3762/bjnano.15.34

• ][22]. The preliminary work on the piezoresistivity of NCG looked promising but was limited regarding the applied strain because of rigid SiO2/Si substrates. In this work, we focus on the piezoresistance measurements in NCG at larger strain values. Initially, a two-point bending setup is described

• . Experimental Piezoresistance measurements NCG was synthesized on a 300 nm SiO2/Si substrate by spin coating S1805 (1:10 dilution with propylene glycol methyl ether acetate, PGMEA) at 4000 rpm. The spin-coated Si/SiO2 substrate was loaded in a vacuum furnace and annealed at 600 °C for 10 h at 10−6 mbar. The

• measured thickness of the grown film was ca. 5 nm. The NCG film was then transferred onto a 100 μm thick PET substrate. For the transfer process, first, the NCG film on SiO2/Si was coated with 200 nm thick PMMA and put into 5 M NaOH solution at 80 °C. The NCG/PMMA film floats on the surface after the

Modulated critical currents of spin-transfer torque-induced resistance changes in NiCu/Cu multilayered nanowires

• Mengqi Fu,
• Roman Hartmann,
• Julian Braun,
• Sergej Andreev,
• Torsten Pietsch and
• Elke Scheer

Beilstein J. Nanotechnol. 2024, 15, 360–366, doi:10.3762/bjnano.15.32

• Discussion The AAO template was fabricated by directly anodizing a ca. 1 µm thick aluminum (Al) film on a silicon (Si) substrate covered with 200 nm SiO2 and patterned Ti/Au (5/50 nm) bottom electrodes. It has pores with a diameter of around 35 nm, an interpore distance of around 50 nm, and a height of

Comparative electron microscopy particle sizing of TiO₂ pigments: sample preparation and measurement

• Ralf Theissmann,
• Christopher Drury,
• Markus Rohe,
• Thomas Koch,
• Jochen Winkler and
• Petr Pikal

Beilstein J. Nanotechnol. 2024, 15, 317–332, doi:10.3762/bjnano.15.29

• cohesive behaviour. Only with such a material can a meaningful comparison be made between different methods of sample preparation, measurement, and image evaluation. Reference materials for industrially important substances such as TiO2, SiO2, ZnO, and others may be advisable. Regulatory authorities or

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS₂ thin films with domains much smaller than the laser spot size

• Felipe Wasem Klein,
• Jean-Roch Huntzinger,
• Vincent Astié,
• Damien Voiry,
• Romain Parret,
• Houssine Makhlouf,
• Sandrine Juillaguet,
• Jean-Manuel Decams,
• Sylvie Contreras,
• Périne Landois,
• Ahmed-Azmi Zahab,
• Jean-Louis Sauvajol and
• Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

• SiO2 on Si substrates. Then, we discuss the applicability of the same criteria for significantly different DLI-PP-CVD MoS2 samples with average thicknesses ranging from sub-monolayer up to three layers. Finally, an original procedure based on the measurement of the intensity of the layer breathing

• growth of wafer-scale MoS2 thin films on SiO2/Si substrates by direct liquid injection pulsed-pressure chemical vapor deposition (DLI-PP-CVD) using low-toxicity precursors [27]. Such MoS2 thin films showed good stoichiometry (Mo/S = 1.94–1.95) and the potential for high photoluminescence quantum yield

• samples are well-characterized, either mechanically exfoliated or standard CVD MoS2 large flakes deposited on 90 ± 6 nm SiO2 on Si substrates. Then, we determine which Raman information is relevant to estimate the average thickness of MoS2 samples produced by the DLI-PP-CVD method, which are constituted

Multiscale modelling of biomolecular corona formation on metallic surfaces

• Parinaz Mosaddeghi Amini,
• Ian Rouse,
• Julia Subbotina and
• Vladimir Lobaskin

Beilstein J. Nanotechnol. 2024, 15, 215–229, doi:10.3762/bjnano.15.21

• (TiO2, SiO2, and Fe2O3), carbonaceous NPs (graphene, carbon nanotubes, and carbon black), semiconductors (CdSe) [26], and polymers [27], it lacks the set of short-range potentials required for calculating milk protein-aluminum adsorption energies. Here, we compute potentials of mean force (PMF) for Al

Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO₂ substrates

• Aleksandra Szkudlarek,
• Jan M. Michalik,
• Inés Serrano-Esparza,
• Zdeněk Nováček,
• Veronika Novotná,
• Piotr Ozga,
• Czesław Kapusta and
• José María De Teresa

Beilstein J. Nanotechnol. 2024, 15, 190–198, doi:10.3762/bjnano.15.18

• nanopatterning, we have found significant morphological changes induced in the SiO2 substrate even at low electron dose values (<8 nC/μm2). We demonstrate that graphene etching and topographical changes in SiO2 substrates can be controlled via electron beam parameters such as dwell time and dose. Keywords

• of concept of water-assisted graphene etching. Moreover, the effects of changes in the topography of Si/SiO2 substrate during this process have not been addressed so far, as they may be observed only under certain experimental conditions. In a standard scanning electron microscope, the morphological

• changes upon stationary exposure were investigated in the work of Stevens Kalceff et al. [24], where the authors observed an increase/decrease in volume of crystalline and amorphous SiO2, respectively. However, the explicit mechanism responsible for the process that considers possible reactions paths with

Determination of the radii of coated and uncoated silicon AFM sharp tips using a height calibration standard grating and a nonlinear regression function

• Perawat Boonpuek and
• Jonathan R. Felts

Beilstein J. Nanotechnol. 2023, 14, 1200–1207, doi:10.3762/bjnano.14.99

• of SiO2 with height = 20 nm, grate distance = 2 µm, and pitch distance = 5 µm, on top of a silicon substrate, which allows for more space for the AFM tips to sweep along the height grate geometry. The corner edge radius of the grating height is not provided in the specification [15]. However, recent

• standard purchased from Budget Sensor [15], the grate height pattern made of silicon oxide (SiO2) has a height of 20 nm, a grate distance of 2 µm, and a pitch distance of 5 µm on top of the silicon substrate. So, the height distance that the tip end can slide along is equal to the distance measured from

• bright area means that the tip apex physically touched the grate’s curved surface of the corner edge. In contrast, the dark area represents inability of the tip to reach the bottom corner of the grating structure (a 20 nm SiO2 column [15]), because the tip cone angle is not parallel to the tip cone

A combined gas-phase dissociative ionization, dissociative electron attachment and deposition study on the potential FEBID precursor [Au(CH₃)₂Cl]₂

• Elif Bilgilisoy,
• Ali Kamali,
• Thomas Xaver Gentner,
• Gerd Ballmann,
• Sjoerd Harder,
• Hans-Peter Steinrück,
• Hubertus Marbach and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2023, 14, 1178–1199, doi:10.3762/bjnano.14.98

• without additional substrate purifications. In the current study, we found the Au content to be further improved to reach about 50 atom % in the UHV setup without pretreatment of the substrate surface. With a pretreated surface, a gold content of 61 atom % was reached. Results and Discussion FEBID on SiO2

• ). Figure 1a depicts an SEM image of the FEBID deposit created with an electron exposure of 7.80 C/cm2. The position of the corresponding AES analysis is marked in Figure 1a by a green-colored star. The AES spectra acquired on the bare substrate and the deposit are shown in Figure 1b. On the pristine SiO2

• (500 nm)/Si(111) substrate (black spectrum), only two main AES signals are visible: The peak at 272 eV is attributed to CKLL Auger transitions of carbon [34], and the peaks at 468, 483, and 503 eV to OKLL Auger transitions of SiO2 [34]. After deposition, AES signals at 69, 181, 272, and 430 eV are

Spatial variations of conductivity of self-assembled monolayers of dodecanethiol on Au/mica and Au/Si substrates

• Julian Skolaut,
• Jędrzej Tepper,
• Federica Galli,
• Wulf Wulfhekel and
• Jan M. van Ruitenbeek

Beilstein J. Nanotechnol. 2023, 14, 1169–1177, doi:10.3762/bjnano.14.97

• S2a). In contrast to the Au/mica surface, the Au/Si substrate exhibits a rougher surface, as seen in Figure 2c, in agreement with the difference in growth mode of Au films on the two substrates. For mica, epitaxial growth is obtained [16][17], while Au on Si/SiO2 forms a granular film [18]. Although

Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone

• Kristjan Kalam,
• Peeter Ritslaid,
• Tanel Käämbre,
• Aile Tamm and
• Kaupo Kukli

Beilstein J. Nanotechnol. 2023, 14, 1085–1092, doi:10.3762/bjnano.14.89

• Kristjan Kalam Peeter Ritslaid Tanel Kaambre Aile Tamm Kaupo Kukli Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia 10.3762/bjnano.14.89 Abstract Polycrystalline SnO2 thin films were grown by atomic layer deposition (ALD) on SiO2/Si(100) substrates from SnI4 and O3

Spatial mapping of photovoltage and light-induced displacement of on-chip coupled piezo/photodiodes by Kelvin probe force microscopy under modulated illumination

• Zeinab Eftekhari,
• Nasim Rezaei,
• Hidde Stokkel,
• Jian-Yao Zheng,
• Andrea Cerreta,
• Ilka Hermes,
• Minh Nguyen,
• Guus Rijnders and
• Rebecca Saive

Beilstein J. Nanotechnol. 2023, 14, 1059–1067, doi:10.3762/bjnano.14.87

• with a diluted BHF:HNO3:H2O solution and a HCl solution, respectively. To avoid shunting of the device, a SiO2 insulating layer was deposited. Patterned aluminum (Al) contacts which connect to the top and bottom electrodes of the PBZT were fabricated through a lift-off process. The fabrication was

Experimental investigation of usage of POE lubricants with Al₂O₃, graphene or CNT nanoparticles in a refrigeration compressor

• Kayhan Dağıdır and
• Kemal Bilen

Beilstein J. Nanotechnol. 2023, 14, 1041–1058, doi:10.3762/bjnano.14.86

• refrigeration compressors are metal oxides and carbon-based nanoparticles [11][12]. It is emphasized that both kinds of nanoparticles have positive effects on system performance. Krishnan et al. [13]. examined the effects of addition of metal oxide nanoparticles of Al2O3, SiO2, ZrO2, and carbon-based