Interaction-induced zero-energy pinning and quantum dot formation in Majorana nanowires

• Samuel D. Escribano,
• Alfredo Levy Yeyati and
• Elsa Prada

Beilstein J. Nanotechnol. 2018, 9, 2171–2180, doi:10.3762/bjnano.9.203

• potential, taking into account the actual three-dimensional (3D) geometry as well as the effect of nearby metallic leads. We consider the geometry depicted in Figure 1a, where a nanowire of rectangular cross section lies on an insulating substrate (typically SiO2) and is contacted to a thin superconducting

Electrospun one-dimensional nanostructures: a new horizon for gas sensing materials

• Muhammad Imran,
• Nunzio Motta and
• Mahnaz Shafiei

Beilstein J. Nanotechnol. 2018, 9, 2128–2170, doi:10.3762/bjnano.9.202

• electrospun nanofibers as the sensing layer. These materials include: metal oxide (MOx) semiconductors (e.g., SnO2, TiO2, SiO2) [83][84], doped MOx semiconductors [4][5][6][7][8][9][10][11], composite materials made of MOx semiconducting materials (e.g., ZnO-In2O3) [86], conducting polymer-based gas sensors

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

• Noel Kennedy,
• Ray Duffy,
• Luke Eaton,
• Dan O’Connell,
• Scott Monaghan,
• Shane Garvey,
• James Connolly,
• Chris Hatem,
• Justin D. Holmes and
• Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

• excess of 1 × 1019 cm−3 with minimal impact on surface quality. Hall effect data proved that reducing SOI dimensions from 66 to 13 nm lead to an increase in carrier concentration values due to the reduced volume available to the dopant for diffusion. Dopant trapping was found at both Si–SiO2 interfaces

• is necessary to achieve maximum dopant incorporation when carrying out P-MLD using ADP as the dopant molecule. SiO2 was chosen as capping material due to the poor diffusivity of P through SiO2, which would favour the preferential diffusion of P into the silicon substrate. Without the protection of a

• surface oxidation had taken place during this process despite the care taken to avoid oxidation. The Si 2p peak shown in Figure 6 has a sub-peak at approximately 104 eV, which is a result of the presence of SiO2. The presence of even this small amount of SiO2 has the ability to inhibit P diffusion into

Localized photodeposition of catalysts using nanophotonic resonances in silicon photocathodes

• Evgenia Kontoleta,
• Sven H. C. Askes,
• Lai-Hung Lai and
• Erik C. Garnett

Beilstein J. Nanotechnol. 2018, 9, 2097–2105, doi:10.3762/bjnano.9.198

• plasmas with 110 nm diameter SiO2 spheres being used as etch mask. Tuning the ratio of the HBr/O2 plasmas allowed for vertical nanowires with variable sidewall tapering angle (see details in Experimental section and Figure S1, Supporting Information File 1). Vertical nanocones (height ≈ 720 nm, top

• rinsed with deionized water. Then 2–3 μL of 110 nm diameter SiO2 spheres dispersed in ethanol were drop-cast on the clean silicon samples and annealed for 1 min at 60 °C on a hot plate. The samples were etched with a combination of plasmas (PlasmaPro 100 Cobra ICP Etch). First Cl2 (20 sec, 50 sccm, HF

• SiO2 formed during the etching procedure, rinsed with water, dipped in hot piranha solution for 20 min and rinsed one more time with water. The last step (hot piranha solution) proved necessary to obtain a smooth coating of the structures with TiO2, probably due to the increase of the hydrophilicity

Recent highlights in nanoscale and mesoscale friction

• Andrea Vanossi,
• Dirk Dietzel,
• Andre Schirmeisen,
• Ernst Meyer,
• Rémy Pawlak,
• Thilo Glatzel,
• Marcin Kisiel,
• Shigeki Kawai and
• Nicola Manini

Beilstein J. Nanotechnol. 2018, 9, 1995–2014, doi:10.3762/bjnano.9.190

• friction was recently observed for micro- and macroscale systems based on incommensurate sliding between graphene-covered spheres or “nanoscrolls” and substrates [76][77]. Also a decrease of friction shear stress with increasing number of layers has been observed for graphene over Si/SiO2 in vacuum

• , nitrogen, and air [78]. In addition, the shear strength and the interface adhesion energy for graphene on Si/SiO2 was proven to always exceed those of the graphene/Ni(111) interface [78]. The weakly lattice-mismatched graphite/hBN interface is also predicted to be promising for ultra-low-friction

Synthesis of a MnO₂/Fe₃O₄/diatomite nanocomposite as an efficient heterogeneous Fenton-like catalyst for methylene blue degradation

• Zishun Li,
• Xuekun Tang,
• Kun Liu,
• Jing Huang,
• Yueyang Xu,
• Qian Peng and
• Minlin Ao

Beilstein J. Nanotechnol. 2018, 9, 1940–1950, doi:10.3762/bjnano.9.185

• , a broad peak at around 22.5° is observed due to the amorphous structure of SiO2. No other obvious diffraction peaks are detected, suggesting that after the washing, the raw diatomite is highly pure. Six peaks at 29.9°, 35.3°, 43.2°, 53.3°, 57.00° and 62.4° are observed in the pattern of Fe3O4

•  6d, the O 1s scan can be fitted into three symmetric peaks located at 532.39, 530.49 and 529.54 eV. Among them, the peaks at 532.9 and 530.49 eV are assigned to the oxygen in SiO2 and Fe3O4, and the peak located at 529.54 eV is ascribed to lattice oxygen (Mn–O–Mn bond) in MnO2 [34]. Therefore, the

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si_1−xGe_x and Si layers

• Richard Daubriac,
• Emmanuel Scheid,
• Hiba Rizk,
• Richard Monflier,
• Sylvain Joblot,
• Rémi Beneyton,
• Pablo Acosta Alba,
• Sébastien Kerdilès and
• Filadelfo Cristiano

Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

• the top Si/BOX interfaces in correspondence of the maximum slope of the oxygen signal. The position of the SiO2/Si interfaces determined in this way (1.2 nm and 1.6 nm below the surface for the DSA- and RTA-annealed wafers, respectively) are in perfect agreement with those found by STEM-EDX

• dopant activation at the semiconductor surface. The calculated differential Hall values are finally presented in Figure 10. The obtained values are plotted together with arsenic concentration profiles measured by SIMS, by taking into account the actual position of the SiO2/top Si interface (cf. Figure 8

Synthesis of hafnium nanoparticles and hafnium nanoparticle films by gas condensation and energetic deposition

• Irini Michelakaki,
• Nikos Boukos,
• Dimitrios A. Dragatogiannis,
• Spyros Stathopoulos,
• Costas A. Charitidis and
• Dimitris Tsoukalas

Beilstein J. Nanotechnol. 2018, 9, 1868–1880, doi:10.3762/bjnano.9.179

• constant HfO2 and its compounds are used in the field of microelectronics for the manufacturing of integrated circuits and more particularly as gate dielectrics of metal-oxide semiconductor transistors having replaced the traditional thermally grown SiO2 dielectric [34]. More recently, HfO2 was also

SO₂ gas adsorption on carbon nanomaterials: a comparative study

• Deepu J. Babu,
• Divya Puthusseri,
• Frank G. Kühl,
• Sherif Okeil,
• Michael Bruns,
• Manfred Hampe and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2018, 9, 1782–1792, doi:10.3762/bjnano.9.169

• with a total length of 5–20 μm. SWNTs have a diameter of ca. 1.5 nm, a length of 1–5 µm and were produced by using CVD with a purity of >95%. Vertically aligned carbon nanotubes (VACNTs) were synthesized in our lab over a Si/SiO2 (600 nm) substrate in a quartz furnace using water-assisted chemical

Magnetic properties of Fe₃O₄ antidot arrays synthesized by AFIR: atomic layer deposition, focused ion beam and thermal reduction

• Juan L. Palma,
• Alejandro Pereira,
• Raquel Álvaro,
• José Miguel García-Martín and
• Juan Escrig

Beilstein J. Nanotechnol. 2018, 9, 1728–1734, doi:10.3762/bjnano.9.164

• material, such new Fe3O4 antidot arrays are of interest for the future development of nano-scale biosensors. Experimental Figure 1 shows the outline of the AFIR process. Si(100) wafers with a native layer of SiO2 were coated with hematite (Fe2O3) in a Savannah S100 ALD reactor from Ultratech operated at

• to manufacture square and hexagonal antidot arrays of magnetic oxides among other geometries, and with variable lattice parameters. Outline of the AFIR process. Si(100) wafers with a native layer of SiO2 were coated with Fe2O3. Antidot arrays were directly etched in the continuous films of Fe2O3

Controllable one-pot synthesis of uniform colloidal TiO₂ particles in a mixed solvent solution for photocatalysis

• Jong Tae Moon,
• Seung Ki Lee and
• Ji Bong Joo

Beilstein J. Nanotechnol. 2018, 9, 1715–1727, doi:10.3762/bjnano.9.163

• oxide particles, such as SiO2, ZrO2 and TiO2 that have well-controlled characteristics [15][30][31]. We have previously reported a reproducible sol–gel coating method for producing SiO2@TiO2 core–shell nanostructures in the presence of a surfactant in pure ethanol solution [7][8]. In addition, another

Toward the use of CVD-grown MoS₂ nanosheets as field-emission source

• Geetanjali Deokar,
• Nitul S. Rajput,
• Junjie Li,
• Francis Leonard Deepak,
• Wei Ou-Yang,
• Nicolas Reckinger,
• Carla Bittencourt,
• Jean-Francois Colomer and
• Mustapha Jouiad

Beilstein J. Nanotechnol. 2018, 9, 1686–1694, doi:10.3762/bjnano.9.160

• deposited on SiO2 by sulfurization. The quality of the obtained NSs was analyzed by scanning electron and transmission electron microscopy, and Raman and X-ray photoelectron spectroscopy. The as-grown NSs were then successfully transferred to the substrates using a wet chemical etching method. The

• ]. Herein, we report on the FE properties of densely packed and uniformly distributed vertically aligned 2D MoS2 NSs, well adhered to the substrate. These NSs were synthesized by double sulfurization of sputter-deposited Mo films on Si (300 nm SiO2/Si) substrates. The FE properties assessment is carried out

• on the NSs transferred onto a conducting fluorine-tin-oxide (FTO) substrate. Experimental Sample preparation The NSs were grown on SiO2/Si substrates via double sulfurization of a sputter-deposited 50 nm Mo film using an ambient-pressure CVD technique. Flushing of the quartz tube using Ar gas stream

Nitrogen-doped carbon nanotubes coated with zinc oxide nanoparticles as sulfur encapsulator for high-performance lithium/sulfur batteries

• Yan Zhao,
• Zhengjun Liu,
• Liancheng Sun,
• Yongguang Zhang,
• Yuting Feng,
• Xin Wang,
• Indira Kurmanbayeva and
• Zhumabay Bakenov

Beilstein J. Nanotechnol. 2018, 9, 1677–1685, doi:10.3762/bjnano.9.159

• Li/S batteries [5]. Another popular strategy to reduce polysulfides from dissolution is using metal oxides, such as TiO2 [6], ZnO [7], MnO2 [8], and SiO2 [9], as the additives or coating layer in the S-cathode. This is because metal oxides can provide strong binding sites with S and reduce the

Evaluation of replicas manufactured in a 3D-printed nanoimprint unit

• Manuel Caño-García,
• Morten A. Geday,
• Manuel Gil-Valverde,
• Xabier Quintana and
• José M. Otón

Beilstein J. Nanotechnol. 2018, 9, 1573–1581, doi:10.3762/bjnano.9.149

• , SiO2). If the resulting thickness is critical, it is advisable to spin-coat the material following the material guidelines [12]. NOA-81: It is one of the most popular optical adhesives of the NOA family (Norland). This material is also UV-curable and solvent-free. The nominal curing wavelength is 355

Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

• Daniel Hiller,
• Julian López-Vidrier,
• Keita Nomoto,
• Michael Wahl,
• Wolfgang Bock,
• Tomáš Chlouba,
• František Trojánek,
• Sebastian Gutsch,
• Margit Zacharias,
• Dirk König,
• Petr Malý and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2018, 9, 1501–1511, doi:10.3762/bjnano.9.141

• , optical and electrical properties of P- and B-incorporating Si NCs in both embedding dielectrics. We will show that, despite some minor differences in the four different sample configurations, no free carriers associated to a doping behaviour of P or B are observed. Experimental Superlattices of SiO2 and

• SRO, or respectively, SRON were deposited on Si and quartz glass substrates by PECVD using processes described in [16][17]. Small amounts of 1% PH3/Ar, or respectively, 10% B2H6/SiH4 were added to the Si-rich layers (both SRO and SRON) whereas in all cases the SiO2 barrier layers remained undoped. All

• PH3-flux for SRO and SRON via MCs+-SIMS measurements. For this task, special samples were fabricated consisting of several 50 nm-thick SRO:P and SRON:P layers with different PH3-fluxes, separated by SiO2 spacing layers (20 nm and 10 nm thickness, respectively). The SIMS depth profiles for as-deposited

Chemistry for electron-induced nanofabrication

• Petra Swiderek,
• Hubertus Marbach and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2018, 9, 1317–1320, doi:10.3762/bjnano.9.124

• of the precursor with a SiO2 substrate was modeled to reveal the peculiar role of surface hydroxyl groups. In particular, the partially hydroxylated surface as formed during electron exposure of a fully hydroxylated substrate appears to initiate dissociation of the adsorbed (CH3–C5H4)Pt(CH3)3

Formation mechanisms of boron oxide films fabricated by large-area electron beam-induced deposition of trimethyl borate

• Aiden A. Martin and
• Philip J. Depond

Beilstein J. Nanotechnol. 2018, 9, 1282–1287, doi:10.3762/bjnano.9.120

• structural properties similar to those of tetraethyl orthosilicate (TEOS, Si(C2H5O)4), which has been well characterized as a precursor for EBID of silica films [14]. TMB has previously been used for boron doping of SiO2 [15] and diamond [16], and the deposition of BCN fibres [17], BN nanotubes [18] and BN

Surface characterization of nanoparticles using near-field light scattering

• Eunsoo Yoo,
• Yizhong Liu,
• Chukwuazam A. Nwasike,
• Sebastian R. Freeman,
• Brian C. DiPaolo,
• Bernardo Cordovez and
• Amber L. Doiron

Beilstein J. Nanotechnol. 2018, 9, 1228–1238, doi:10.3762/bjnano.9.114

• composed of rectangular cross-sections with height of 250 nm and width 600 nm, which are cladded by SiO2 (3 μm above and 5 μm below) across the whole chip except for a 200 × 200 μm experimental window in the center region of the chip (Figure 1). During the experiment, the topmost cladding layer is removed

Understanding the performance and mechanism of Mg-containing oxides as support catalysts in the thermal dry reforming of methane

• Nor Fazila Khairudin,
• Mohd Farid Fahmi Sukri,
• Mehrnoush Khavarian and
• Abdul Rahman Mohamed

Beilstein J. Nanotechnol. 2018, 9, 1162–1183, doi:10.3762/bjnano.9.108

• , Yan et al. [101] confirmed that plasma treated catalysts can improve the interaction between Ni and the SiO2 support and produces less defect sites on the Ni particles. The authors further remarked that this plasma treatment could suppress inactive carbon deposition and enhance catalyst performance

• stability in stabilizing the zirconia tetragonal phase, improved basicity sites for the support, and decreased reducibility of Ni2+. Li et al. [118] designed a Ni@Ni–Mg phyllosilicate core–shell catalyst using the hydrothermal treatment of Ni@SiO2 with Mg(NO3)2. The alkalinity and porosity of the catalyst

• nanoparticles on the catalyst support without aggregation. Zhu et al. [105] introduced Mg as a promoter to the Ni/SiO2 catalyst synthesized via the impregnation method. The Ni–Mg/SiO2 catalyst was deactivated after a 30 h of reaction time due to the deposition of inert carbon, which is difficult to oxidize

Review on nanoparticles and nanostructured materials: history, sources, toxicity and regulations

• Jaison Jeevanandam,
• Ahmed Barhoum,
• Yen S. Chan,
• Alain Dufresne and
• Michael K. Danquah

Beilstein J. Nanotechnol. 2018, 9, 1050–1074, doi:10.3762/bjnano.9.98

• CaCuSi4O10 and SiO2 (both glass and quartz). In ancient geographical regions of the Roman Empire, including countries such as Egypt, Mesopotamia, and Greece, the extensive use of Egyptian blue for decorative purposes has been observed during archaeological explorations. The synthesis of metallic NPs via

• behind the specific colors of metal colloids [32]. In the 1940s, SiO2 NPs were being manufactured as substitutes to carbon black for rubber reinforcement [33]. Today manufactured NMs can significantly improve the characteristics of bulk materials, in terms of strength, conductivity, durability, and

Comparative study of sculptured metallic thin films deposited by oblique angle deposition at different temperatures

• Susann Liedtke,
• Christoph Grüner,
• Jürgen W. Gerlach and
• Bernd Rauschenbach

Beilstein J. Nanotechnol. 2018, 9, 954–962, doi:10.3762/bjnano.9.89

• observed by Poxson et al. [26] for obliquely deposited SiO2. Further, Xi et al. [27] have also reported on a remarkably low refractive index for obliquely deposited SiO2, which corresponds to a film porosity of approximately 90%. In summary, both the incidence angle and the substrate temperature influence

Effect of annealing treatments on CeO₂ grown on TiN and Si substrates by atomic layer deposition

• Silvia Vangelista,
• Rossella Piagge,
• Satu Ek and
• Alessio Lamperti

Beilstein J. Nanotechnol. 2018, 9, 890–899, doi:10.3762/bjnano.9.83

• Figure 2b we compare ToF-SIMS profiles of CeO2 on Si as-deposited (star symbols), and annealed at 700 (circles), 800 (squares) and 900 °C (triangles). These progressive annealing treatments allow us to observe the evolution of the SiO2 interfacial layer thickness in between CeO2 and silicon substrate. It

• the signal connected with OH− content progressively decreases (not shown). This demonstrates that ceria film deposited on SiO2/Si substrate can sustain annealing at high temperatures up to 900 °C without major concerns regarding the onset of interdiffusion and interface stability. The cross-sectional

• native SiO2 layer, we can clearly detect a columnar CeO2 structure with highly defined planes, even if it is not possible to identify which family of planes they belong to. This is a clear indication that the thermal treatment at 900 °C effectively promotes further crystallization of CeO2. This

Heavy-metal detectors based on modified ferrite nanoparticles

• Urszula Klekotka,
• Ewelina Wińska,
• Elżbieta Zambrzycka-Szelewa,
• Dariusz Satuła and
• Beata Kalska-Szostko

Beilstein J. Nanotechnol. 2018, 9, 762–770, doi:10.3762/bjnano.9.69

• deoxygenated acetone. Rinsing was repeated two more times and, finally, the sample was dried by rotary evaporation until a powder was obtained [20][21]. Modification of nanoparticles with phthalic anhydride, succinic anhydride and acetic anhydride The application of Ca ferrite nanoparticles modified with SiO2

A review of carbon-based and non-carbon-based catalyst supports for the selective catalytic reduction of nitric oxide

• Shahreen Binti Izwan Anthonysamy,
• Syahidah Binti Afandi,
• Mehrnoush Khavarian and
• Abdul Rahman Bin Mohamed

Beilstein J. Nanotechnol. 2018, 9, 740–761, doi:10.3762/bjnano.9.68

• influenced by the function of support materials. In their study, SiO2 was synthesised using the sol–gel method. Zeng et al. [41] implemented the sol–gel technique to prepare CuO–TiO2 catalysts for the selective catalytic oxidation of NO. Based on the results, the CuO–TiO2 catalysts demonstrated higher

Dynamics and fragmentation mechanism of (C₅H₄CH₃)Pt(CH₃)₃ on SiO₂ surfaces

• Kaliappan Muthukumar,
• Harald O. Jeschke and
• Roser Valentí

Beilstein J. Nanotechnol. 2018, 9, 711–720, doi:10.3762/bjnano.9.66

• /bjnano.9.66 Abstract The interaction of trimethyl(methylcyclopentadienyl)platinum(IV) ((C5H4CH3)Pt(CH3)3) molecules on fully and partially hydroxylated SiO2 surfaces, as well as the dynamics of this interaction were investigated using density functional theory (DFT) and finite temperature DFT-based

• have made a series of DFT studies in which we considered fully and partially hydroxylated SiO2 surfaces as a representative for untreated and electron beam pretreated substrates and investigated the adsorption [9][10] and dynamics of several carbonyl precursors [11]. (C5H4CH3)Pt(CH3)3, in which Pt

• ligand exchange process [13]. Recently, examination of the behavior of this molecule on fully hydroxylated SiO2 surfaces has shown that the molecule remains physisorbed [14]. These static T = 0 K DFT computations provide insights on the bonding of (C5H4CH3)Pt(CH3)3 to this surface, but are limited to the